KR101045708B1

KR101045708B1 - Method of manufacturing light emitting device package and light emitting device package

Info

Publication number: KR101045708B1
Application number: KR1020100022635A
Authority: KR
Inventors: 안복만
Original assignee: 안복만
Priority date: 2009-03-13
Filing date: 2010-03-15
Publication date: 2011-06-30
Also published as: KR20100103432A

Abstract

The present invention relates to a light emitting device package manufacturing method and a light emitting device package according to the above, more specifically to improve the heat dissipation performance of the light emitting device, to simplify the structure of the product, to improve the reliability of the product by improving the interlayer bonding force and durability It relates to a light emitting device package manufacturing method and a light emitting device package according to it.

Description

Method of manufacturing light emitting device package and light emitting device package according to the present invention {MANUFACTURING METHOD OF LIGHT EMITTING DEVICE PACKAGE AND LIGHT EMITTING DEVICE PACKAGE BY THE METHOD}

In general, a light emitting device is a light emitting diode (LED), which is a device used to send and receive signals by converting electrical signals into infrared, visible, or ultraviolet light using the characteristics of compound semiconductors. to be.

LED has the advantages of high efficiency, high-speed response, long life, miniaturization, light weight, low power consumption, energy saving, and carbon dioxide generation and mercury-free light source. It is applied to many fields such as LCD, full color LED display. In addition, the point light source and ultra-small optical devices can freely design lines, planes, and spaces, and thus their fields of application are expected to be sustained in a wide range of fields such as display, signal, display, lighting, bio, telecommunications, mobile phones, LCD, and automotive industries.

Core technologies of the LED packaging process include chip design, structure design, optical design, thermal design, and packaging process technology from the chip level in order to utilize the emitted light optimally. Incorporates packaging technologies that take into account the requirements of the application. The development direction of LED packaging technology is developing in the direction of ultra-thin or ultra-small (backlight), high output (lighting), high integration (display) depending on the type of application products. to be.

The LED chip is manufactured as a light source module through a packaging process. By using this light source module, various LED backlights, LED displays, and LED lights are made, and the principle and process technology of packaging the chip according to the type of LED application products This varies greatly. That is, the optimum design conditions of packages and modules are changing as the output power of LED optical devices for obtaining high power LED light sources continues to improve, and there are many types of packages because they have diverse applications and no standard specifications. , Surface mount device (SMD), chip on board (COB), and back light unit (BLU).

This LED package is completed by a molding process after the basic die bonding and wire bonding process to complete the light source module.

Conventional light emitting device package has a problem that high heat is generated due to poor heat dissipation performance in the package when the current is increased in order to obtain high output light, and thus high heat is present inside the package without heat dissipation. In this case, the resistance becomes very high and the light efficiency is lowered. Since there are many thermal resistors between the light emitting device and the heat radiating device, heat generated in the light emitting device is not easily transferred to the outside.

In addition, in the conventional light emitting device package, the position of the electrode may be misaligned in the process of heating and pressing the insulating layer and the electrode layer to form the electrode.

The present invention enables a light emitting device package manufacturing method and a light emitting device package according to the present invention, which can realize a heat dissipation structure with excellent heat dissipation effect, and can significantly improve the bonding force and durability of the product in the manufacturing process of the heat dissipation structure. For the purpose of providing

The present invention provides a metal base for emitting heat of the light emitting device; A part of the upper surface of the metal base is half-etched by a chemical method so as to protrude a mounting portion for mounting the light emitting device; Forming an insulating layer on the etching surface of the metal base; Forming an electrode layer on the insulating layer; Laminating the metal base, the insulating layer, and the electrode layer to perform heat compression; Etching the electrode layer into a desired electrode shape; The present invention provides a method of manufacturing a light emitting device package including resist printing an insulating layer exposed by the electrode layer etching process.

The metal base is provided with rolled copper, and the bonding between the insulating layers is performed by surface treatment using a Silane compound.

The electrode layer is pressed into the same shape as the circuit pattern of the upper surface of the metal base, laminated on the upper surface of the metal base with the insulating layer interposed therebetween by heating and pressing, and the insulating layer and the electrode layer of the seating portion are removed by a polishing process. It is characterized by.

In addition, the electrode layer is characterized in that the gold plating is completed.

A gold plating layer may be formed on the bottom surface of the metal base on which the process is completed.

A thermal diffusion ink layer may be formed on the bottom surface of the metal base on which the process is completed.

According to another feature of the invention, there is provided a light emitting device package implemented by the manufacturing method.

According to the present invention, since the seating portion is formed on the metal base by half etching, there is an advantage in that mass production is excellent and the formation of circuit patterns of any shape or size can be collectively implemented.

In addition, the surface treatment method of the present invention can significantly improve the bonding strength between layers and prevent the corrosion of the outer surface of the product can increase the completeness of the product.

1 is a control flowchart showing a manufacturing process of a light emitting device package according to an embodiment of the present invention.
2 is a cross-sectional view of a light emitting device package according to an embodiment of the present invention.
3 to 11 is a detailed view of the components of each manufacturing process of the light emitting device package according to an embodiment of the present invention.

1 is a flowchart illustrating a method of manufacturing a light emitting device package provided by the present invention, and FIG. 2 is a cross-sectional view of an embodiment of a light emitting device package implemented and completed according to the manufacturing method of the present invention.

Hereinafter, a structure of a light emitting device package implemented according to the manufacturing process of FIG. 1 will be described with reference to each detailed view.

As a first step (s100), the present invention includes a metal base 10 for heat dissipation, as shown in FIG.

The metal base 10 is formed of a thermally conductive metal having high heat dissipation capability, for example, copper or aluminum. Most preferably, the metal base 10 is formed of a rolled copper having a thickness of 1.5 mm or more.

Next, a mounting portion (primary circuit) 11, which is a portion to which the light emitting device is to be soldered, is formed on the metal base 10 (S200).

According to this process, as shown in Figure 4, the mounting portion 11 for mounting the light emitting element is formed to protrude on the metal base 10, the mounting portion 11 of the metal base 10 is made of metal The other part (etching surface) except the seating part 11 of the upper surface of the base 10 is formed by half-etching.

The half etching is to use a chemical etching method using a mechanical drug injection device to increase the mass productivity, it is important to make the seating portion uniform surface area up and down by appropriately adjusting the chemical injection amount and injection time.

In forming the seating portion, applying half etching by a chemical method has the advantage of being able to collectively etch the seating portion of any size to satisfy mass productivity.

The light emitting device is directly attached to the metal base 10 by a thermally conductive adhesive. In addition, the light emitting device may be provided in the metal base 10 by a chip mounting pad. The chip mounting pad is to provide a mounting area for mounting the light emitting device, and may be formed by patterning with copper foil on the metal base. Since the light emitting device is soldered and bonded to the seating part 11 of the metal base 10, heat generated from the light emitting device can be more effectively released to the outside, and an adhesive layer is formed by attaching a light emitting device by forming an adhesive layer such as epoxy. It is possible to prevent the delay of heat transfer, so the heat dissipation performance is very good.

As a next process, the electrode layer 30 to be formed on the metal base 10 is formed (s300).

Electrode layer 30 is to be spaced apart from the seating portion 11, it is preferable that the electrolytic copper is easy to be harmonized as a conductive material that can be electrically connected to the light emitting device.

As shown in FIG. 5, the electrode layer 30 has a circuit 31 having the same shape as the primary circuit formed on the metal base by a press (squeezing process) so that the electrode layer 30 can be tightly coupled to the metal base without a gap. . That is, the electrode layer 30, which is electrolytic copper, is pressed slightly (e.g. 30 µm) by a press to form a step difference due to protrusions, such as an etched circuit pattern of the metal base 10.

When the electrode layer 30 is provided by the above process, the surface treatment for improving the bonding strength with the insulating layer is performed on the etching surface of the metal base 10 except for the mounting part 11 prior to the lamination (s400).

Since the metal base 10 of the present invention is a thick rolled copper, it is not possible to obtain a tensile force required by general surface roughening treatment, and thus it is possible to improve the bonding strength with the insulating layer 20 to be laminated under such conditions. It's the key to this.

The present invention is to enhance the bonding force between the metal base 10 and the insulating layer 20, as shown in Figure 6, to help the bonding of metal and PP (prepreg) to the etching surface of the upper surface of the metal base By applying Silane-based compound (12) having the same, it shows uniform bonding characteristics which are not sensitive to the type of copper foil and PP, and excludes etching on the copper foil to generate parts such as damage of the inner and outer layer patterns. Don't let that happen.

The Silane-based compound 12 has the advantage of ensuring improved tensile strength (Peel Strength) and adhesion reliability than the existing oxide-based process under the same material conditions.

As such, the metal base for heat dissipation, which emits heat of the light emitting device to the outside, is etched to form a seating portion 11 on which the light emitting element is seated, and to form an electrode electrically connected to the light emitting element around the seating portion 11. In order to manufacture the light emitting device package by sequentially stacking the insulating layer 20 and the electrode layer 30, and then hot pressing.

That is, when both the surface treatment of the metal base 10 and the press working of the electrode layer 30 are completed, an interlayer bonding process (lamination process) by heating and pressing is performed (s500).

As illustrated in FIG. 7, the lamination process is implemented by laminating and heating and pressing the insulating layer 20 and the electrode layer 30 on the metal base 10.

When the insulating layer 20 and the electrode layer 30 are formed on the etching surface around the mounting portion 11 of the metal base 10, the height of stacking the insulating layer 20 and the electrode layer 30 due to the heating and pressing process is increased. It is formed to a certain level higher than the height of the seating portion (11). This is because the height of the insulating layer 20 and the electrode layer 30 is reduced to the etching surface side of the metal base 10 during heating and pressing.

After lamination, as shown in FIG. 8, the insulating layer and the electrode layer are also formed on the seating part 11, and the top and side surfaces of the seating part are polished and removed as shown in the figure (bottom figure of FIG. 8).

The seating portion 11 and the electrode layer 30 should be spaced apart from each other to be insulated from each other, which may be formed in the polishing process or the secondary circuit forming step described later.

As such, when the electrode layer on the upper surface of the seat is removed by the polishing process, the connection structure is solid and the defect rate is small while forming a space between the seat and the electrode layer, thereby improving durability and reliability of the product.

After completion of the interlayer bonding by heat pressing, as illustrated in FIG. 9, a secondary circuit including an electrode is etched to the electrode layer 30 (S600).

When the etching of the electrode layer is completed, as shown in the plan view of FIG. 10, the seating part (primary circuit) (part A shown in red) and the secondary circuit (part B shown in green) of the electrode layer are formed. All are formed.

The height between the seating portion 11 and the electrode layer 30 is not limited to the drawings as can be adjusted as needed.

After forming the secondary circuit of the electrode layer, as shown in FIG. 11, the resist layer 40 is printed to prevent the exposed insulating layer (S700).

After all processes including the resist printing are completed, in order to prevent corrosion of the electrode layer 30 and the metal base, the upper surface 60a of the electrode layer and the bottom surface 60b of the metal base are shown in FIG. 2. , To form a gold plated layer 60, the bottom surface 60b of the metal base is applied to the thermal diffusion ink in addition to the gold plated layer to enhance the thermal conductivity.

10: metal base 11: seating portion
12: silane compound 20: insulating layer
30 electrode layer 31 secondary circuit
40: resist layer 60: gold plating layer

Claims

Preparing a metal base for dissipating heat of the light emitting device;
A part of the upper surface of the metal base is half-etched by a chemical method so as to protrude a mounting portion for mounting the light emitting device;
Forming an insulating layer on the etching surface of the metal base;
Forming an electrode layer on the insulating layer;
Laminating the metal base, the insulating layer, and the electrode layer in the order of heat compression;
Etching the electrode layer into the required electrode shape;
Resist printing the insulating layer exposed by the electrode layer etching process.

The method of claim 1,
The electrode layer is pressed into a shape that can be in close contact with the upper surface of the metal base is bonded to the upper surface of the metal base via the insulating layer laminated and bonded, the insulating layer and the electrode layer of the seating portion is removed by a polishing process Method of manufacturing a light emitting device package characterized in that.

The method of claim 1,
Method of manufacturing a light emitting device package, characterized in that to form a gold plated layer on the surface of the electrode layer is completed.

The method of claim 1,
Method of manufacturing a light emitting device package, characterized in that to form a gold plated layer on the bottom surface of the metal base is completed.

The method of claim 1,
The method of manufacturing a light emitting device package, characterized in that to form a thermal diffusion ink layer on the bottom surface of the metal base is completed.

The method of claim 1,
The metal base is provided with a rolled copper, the bonding between the insulating layer is a method of manufacturing a light emitting device package, characterized in that by the surface treatment using a Silane-based compound.

The method of claim 1,
The method of manufacturing a light emitting device package including forming the insulating layer and the electrode layer to have a height of stacking the insulating layer and the electrode layer higher than the height of the seating part when the insulating layer and the electrode layer are formed.

The method of claim 1,
And forming the electrode layer spaced apart from the seating part when the electrode layer is formed.

A light emitting device package implemented by applying the manufacturing method of any one of claims 1 to 8.