KR101044426B1 - 진공처리장치 - Google Patents

진공처리장치 Download PDF

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Publication number
KR101044426B1
KR101044426B1 KR1020090007919A KR20090007919A KR101044426B1 KR 101044426 B1 KR101044426 B1 KR 101044426B1 KR 1020090007919 A KR1020090007919 A KR 1020090007919A KR 20090007919 A KR20090007919 A KR 20090007919A KR 101044426 B1 KR101044426 B1 KR 101044426B1
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KR
South Korea
Prior art keywords
vacuum
film
cover
chamber
lid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020090007919A
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English (en)
Korean (ko)
Other versions
KR20100076850A (ko
Inventor
미치아키 고바야시
츠토무 나카무라
고지 오쿠다
마사카즈 이소자키
Original Assignee
가부시키가이샤 히다치 하이테크놀로지즈
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 가부시키가이샤 히다치 하이테크놀로지즈 filed Critical 가부시키가이샤 히다치 하이테크놀로지즈
Publication of KR20100076850A publication Critical patent/KR20100076850A/ko
Application granted granted Critical
Publication of KR101044426B1 publication Critical patent/KR101044426B1/ko
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020090007919A 2008-12-26 2009-02-02 진공처리장치 Expired - Fee Related KR101044426B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008331823A JP2010153681A (ja) 2008-12-26 2008-12-26 真空処理装置
JPJP-P-2008-331823 2008-12-26

Publications (2)

Publication Number Publication Date
KR20100076850A KR20100076850A (ko) 2010-07-06
KR101044426B1 true KR101044426B1 (ko) 2011-06-27

Family

ID=42283458

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090007919A Expired - Fee Related KR101044426B1 (ko) 2008-12-26 2009-02-02 진공처리장치

Country Status (3)

Country Link
US (1) US20100163185A1 (enExample)
JP (1) JP2010153681A (enExample)
KR (1) KR101044426B1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104164661A (zh) * 2013-05-16 2014-11-26 理想能源设备(上海)有限公司 直列式多腔叠层并行处理真空设备及其使用方法
KR102366179B1 (ko) * 2019-08-23 2022-02-22 세메스 주식회사 반송 장치 및 이를 가지는 기판 처리 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02198139A (ja) * 1989-01-27 1990-08-06 Fujitsu Ltd 真空処理装置の内壁汚染防止方法
JPH05114582A (ja) * 1991-10-22 1993-05-07 Tokyo Electron Yamanashi Kk 真空処理装置
JPH11185994A (ja) * 1997-12-25 1999-07-09 Hitachi Chem Co Ltd プラズマ発生装置、そのチャンバー内壁保護部材及びその製造法、チャンバー内壁の保護方法並びにプラズマ処理方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61119038A (ja) * 1984-11-15 1986-06-06 Toshiba Corp ドライエツチング装置の浄化方法
JPS60227421A (ja) * 1985-04-05 1985-11-12 Hitachi Ltd 真空容器
EP0821395A3 (en) * 1996-07-19 1998-03-25 Tokyo Electron Limited Plasma processing apparatus
KR100276821B1 (ko) * 1998-05-21 2001-03-02 김양평 라미네이트용 필림(시트)
US6703092B1 (en) * 1998-05-29 2004-03-09 E.I. Du Pont De Nemours And Company Resin molded article for chamber liner
JP2003257938A (ja) * 2002-02-27 2003-09-12 Hitachi High-Technologies Corp プラズマエッチング処理装置
JPWO2005055298A1 (ja) * 2003-12-03 2007-08-23 東京エレクトロン株式会社 プラズマ処理装置及びマルチチャンバシステム
US7469715B2 (en) * 2005-07-01 2008-12-30 Applied Materials, Inc. Chamber isolation valve RF grounding
US7699957B2 (en) * 2006-03-03 2010-04-20 Advanced Display Process Engineering Co., Ltd. Plasma processing apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02198139A (ja) * 1989-01-27 1990-08-06 Fujitsu Ltd 真空処理装置の内壁汚染防止方法
JPH05114582A (ja) * 1991-10-22 1993-05-07 Tokyo Electron Yamanashi Kk 真空処理装置
JPH11185994A (ja) * 1997-12-25 1999-07-09 Hitachi Chem Co Ltd プラズマ発生装置、そのチャンバー内壁保護部材及びその製造法、チャンバー内壁の保護方法並びにプラズマ処理方法

Also Published As

Publication number Publication date
US20100163185A1 (en) 2010-07-01
KR20100076850A (ko) 2010-07-06
JP2010153681A (ja) 2010-07-08

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