KR101044304B1 - 화학 기계적 연마 조성물 및 이에 관한 방법 - Google Patents

화학 기계적 연마 조성물 및 이에 관한 방법 Download PDF

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Publication number
KR101044304B1
KR101044304B1 KR1020090071224A KR20090071224A KR101044304B1 KR 101044304 B1 KR101044304 B1 KR 101044304B1 KR 1020090071224 A KR1020090071224 A KR 1020090071224A KR 20090071224 A KR20090071224 A KR 20090071224A KR 101044304 B1 KR101044304 B1 KR 101044304B1
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South Korea
Prior art keywords
mechanical polishing
chemical mechanical
weight
polishing composition
acid
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KR1020090071224A
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English (en)
Korean (ko)
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KR20100015289A (ko
Inventor
티르탄카르 고쉬
테렌스 엠. 토마스
훙위 왕
스콧 에이. 이빗슨
Original Assignee
롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드
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Publication of KR20100015289A publication Critical patent/KR20100015289A/ko
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020090071224A 2008-08-04 2009-08-03 화학 기계적 연마 조성물 및 이에 관한 방법 Expired - Fee Related KR101044304B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/185,600 2008-08-04
US12/185,600 US8540893B2 (en) 2008-08-04 2008-08-04 Chemical mechanical polishing composition and methods relating thereto

Publications (2)

Publication Number Publication Date
KR20100015289A KR20100015289A (ko) 2010-02-12
KR101044304B1 true KR101044304B1 (ko) 2011-06-29

Family

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KR1020090071224A Expired - Fee Related KR101044304B1 (ko) 2008-08-04 2009-08-03 화학 기계적 연마 조성물 및 이에 관한 방법

Country Status (6)

Country Link
US (2) US8540893B2 (enExample)
EP (1) EP2151482A1 (enExample)
JP (1) JP5543148B2 (enExample)
KR (1) KR101044304B1 (enExample)
CN (1) CN101649164B (enExample)
TW (1) TWI458817B (enExample)

Cited By (1)

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WO2017195968A1 (ko) * 2016-05-12 2017-11-16 삼성에스디아이 주식회사 구리 연마용 cmp 슬러리 조성물 및 이를 이용한 연마 방법

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CN101974297A (zh) * 2010-11-12 2011-02-16 大连三达奥克化学股份有限公司 核/壳型复合纳米磨料铜化学机械抛光液
US8435896B2 (en) 2011-03-03 2013-05-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable chemical mechanical polishing composition and methods relating thereto
US8440097B2 (en) 2011-03-03 2013-05-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition
US8512427B2 (en) * 2011-09-29 2013-08-20 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Acrylate polyurethane chemical mechanical polishing layer
WO2014045937A1 (ja) * 2012-09-18 2014-03-27 株式会社フジミインコーポレーテッド 研磨用組成物
US20140308814A1 (en) * 2013-04-15 2014-10-16 Applied Materials, Inc Chemical mechanical polishing methods and systems including pre-treatment phase and pre-treatment compositions
US20150104940A1 (en) 2013-10-11 2015-04-16 Air Products And Chemicals Inc. Barrier chemical mechanical planarization composition and method thereof
CN105097425A (zh) * 2014-04-18 2015-11-25 中芯国际集成电路制造(上海)有限公司 一种化学机械研磨的方法
WO2016065057A1 (en) 2014-10-21 2016-04-28 Cabot Microelectronics Corporation Corrosion inhibitors and related compositions and methods
TWI580767B (zh) * 2014-10-21 2017-05-01 卡博特微電子公司 鈷拋光加速劑
EP3210237B1 (en) 2014-10-21 2019-05-08 Cabot Microelectronics Corporation Cobalt dishing control agents
US9944828B2 (en) 2014-10-21 2018-04-17 Cabot Microelectronics Corporation Slurry for chemical mechanical polishing of cobalt
US10181408B2 (en) * 2017-01-31 2019-01-15 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for tungsten using polyglycols and polyglycol derivatives
US12297375B2 (en) * 2020-05-28 2025-05-13 Taiwan Semiconductor Manufacturing Company Ltd. Slurry composition and method for polishing and integrated circuit

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KR20050063737A (ko) * 2003-12-22 2005-06-28 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 낮은 하강 압력으로 구리를 연마하기 위한 조성물 및 방법

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KR100581649B1 (ko) * 1998-06-10 2006-05-23 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 금속 ｃｍｐ에서 광택화를 위한 조성물 및 방법
US6443812B1 (en) * 1999-08-24 2002-09-03 Rodel Holdings Inc. Compositions for insulator and metal CMP and methods relating thereto
KR20040002907A (ko) * 2001-04-12 2004-01-07 로델 홀딩스 인코포레이티드 계면활성제를 갖는 연마 조성물
US6632259B2 (en) 2001-05-18 2003-10-14 Rodel Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US6615717B1 (en) * 2001-06-18 2003-09-09 Xerox Corporation Symmetrical parallel duplex paper path device
US20030119692A1 (en) 2001-12-07 2003-06-26 So Joseph K. Copper polishing cleaning solution
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WO2005047410A1 (en) * 2003-11-14 2005-05-26 Showa Denko K.K. Polishing composition and polishing method
ATE495206T1 (de) 2003-11-20 2011-01-15 Basf Se Wasserlösliche copolymere von monoethylenisch ungesätti gten polyalkylenoxidmonomeren und mindestens ein stickstoffatom enthaltenden dipolaren monomeren
US7303993B2 (en) * 2004-07-01 2007-12-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US7384871B2 (en) * 2004-07-01 2008-06-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US7086935B2 (en) * 2004-11-24 2006-08-08 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cellulose-containing polishing compositions and methods relating thereto
US7435356B2 (en) * 2004-11-24 2008-10-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Abrasive-free chemical mechanical polishing compositions and methods relating thereto
US7842192B2 (en) * 2006-02-08 2010-11-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-component barrier polishing solution
TWI402335B (zh) * 2006-09-08 2013-07-21 Kao Corp 研磨液組合物

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KR20050063737A (ko) * 2003-12-22 2005-06-28 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 낮은 하강 압력으로 구리를 연마하기 위한 조성물 및 방법

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017195968A1 (ko) * 2016-05-12 2017-11-16 삼성에스디아이 주식회사 구리 연마용 cmp 슬러리 조성물 및 이를 이용한 연마 방법
KR20170127815A (ko) * 2016-05-12 2017-11-22 삼성에스디아이 주식회사 구리 연마용 cmp 슬러리 조성물 및 이를 이용한 연마 방법
KR101943702B1 (ko) 2016-05-12 2019-01-29 삼성에스디아이 주식회사 구리 연마용 cmp 슬러리 조성물 및 이를 이용한 연마 방법

Also Published As

Publication number Publication date
US8540893B2 (en) 2013-09-24
CN101649164B (zh) 2013-02-13
US20100029079A1 (en) 2010-02-04
TW201006916A (en) 2010-02-16
JP2010045351A (ja) 2010-02-25
US20130217230A1 (en) 2013-08-22
CN101649164A (zh) 2010-02-17
TWI458817B (zh) 2014-11-01
JP5543148B2 (ja) 2014-07-09
US8563436B2 (en) 2013-10-22
KR20100015289A (ko) 2010-02-12
EP2151482A1 (en) 2010-02-10

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