KR101024194B1 - 막 형성 프로세스들에서 반응성 식각 및 성장 종의 인-시튜생성 방법 - Google Patents

막 형성 프로세스들에서 반응성 식각 및 성장 종의 인-시튜생성 방법 Download PDF

Info

Publication number
KR101024194B1
KR101024194B1 KR1020087020262A KR20087020262A KR101024194B1 KR 101024194 B1 KR101024194 B1 KR 101024194B1 KR 1020087020262 A KR1020087020262 A KR 1020087020262A KR 20087020262 A KR20087020262 A KR 20087020262A KR 101024194 B1 KR101024194 B1 KR 101024194B1
Authority
KR
South Korea
Prior art keywords
reaction
wafer
film
etching
hydrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020087020262A
Other languages
English (en)
Korean (ko)
Other versions
KR20090012206A (ko
Inventor
사디쉬 쿠퍼라오
데이비드 케이. 칼슨
하워드 벡포드
에롤 산체스
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20090012206A publication Critical patent/KR20090012206A/ko
Application granted granted Critical
Publication of KR101024194B1 publication Critical patent/KR101024194B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020087020262A 2006-01-20 2007-01-09 막 형성 프로세스들에서 반응성 식각 및 성장 종의 인-시튜생성 방법 Expired - Fee Related KR101024194B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/336,178 2006-01-20
US11/336,178 US7709391B2 (en) 2006-01-20 2006-01-20 Methods for in-situ generation of reactive etch and growth specie in film formation processes

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020117000355A Division KR101237868B1 (ko) 2006-01-20 2007-01-09 막 형성 프로세스들에서 반응성 식각 및 성장 종의 인-시튜 생성 방법

Publications (2)

Publication Number Publication Date
KR20090012206A KR20090012206A (ko) 2009-02-02
KR101024194B1 true KR101024194B1 (ko) 2011-03-22

Family

ID=38284511

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020117000355A Expired - Fee Related KR101237868B1 (ko) 2006-01-20 2007-01-09 막 형성 프로세스들에서 반응성 식각 및 성장 종의 인-시튜 생성 방법
KR1020087020262A Expired - Fee Related KR101024194B1 (ko) 2006-01-20 2007-01-09 막 형성 프로세스들에서 반응성 식각 및 성장 종의 인-시튜생성 방법

Family Applications Before (1)

Application Number Title Priority Date Filing Date
KR1020117000355A Expired - Fee Related KR101237868B1 (ko) 2006-01-20 2007-01-09 막 형성 프로세스들에서 반응성 식각 및 성장 종의 인-시튜 생성 방법

Country Status (5)

Country Link
US (1) US7709391B2 (enExample)
JP (1) JP5420397B2 (enExample)
KR (2) KR101237868B1 (enExample)
TW (1) TWI379346B (enExample)
WO (1) WO2008127220A2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090087967A1 (en) * 2005-11-14 2009-04-02 Todd Michael A Precursors and processes for low temperature selective epitaxial growth
US20080070356A1 (en) * 2006-09-14 2008-03-20 Advanced Micro Devices, Inc. Trench replacement gate process for transistors having elevated source and drain regions
US7976634B2 (en) * 2006-11-21 2011-07-12 Applied Materials, Inc. Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems
WO2009136974A2 (en) * 2008-02-07 2009-11-12 Los Alamos National Security, Llc Thick-shell nanocrystal quantum dots
KR101064873B1 (ko) * 2009-10-23 2011-09-16 주성엔지니어링(주) 기판 처리 장치 및 방법
EP2642001B1 (en) 2010-11-17 2020-10-21 Showa Denko K.K. Production process of epitaxial silicon carbide single crystal substrate
WO2012128783A1 (en) * 2011-03-22 2012-09-27 Applied Materials, Inc. Liner assembly for chemical vapor deposition chamber
US9499905B2 (en) * 2011-07-22 2016-11-22 Applied Materials, Inc. Methods and apparatus for the deposition of materials on a substrate
JP5876398B2 (ja) 2012-10-18 2016-03-02 東京エレクトロン株式会社 成膜方法及び成膜装置
US20140116336A1 (en) * 2012-10-26 2014-05-01 Applied Materials, Inc. Substrate process chamber exhaust
US11414759B2 (en) 2013-11-29 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd Mechanisms for supplying process gas into wafer process apparatus
KR102150728B1 (ko) * 2013-12-16 2020-09-01 에스케이실트론 주식회사 공정 챔버의 세정 장치 및 세정 방법
CN110676194A (zh) 2015-12-04 2020-01-10 应用材料公司 用于清洁ingaas(或iii-v族)基板的方法和解决方案
KR102408720B1 (ko) 2017-06-07 2022-06-14 삼성전자주식회사 상부 돔을 포함하는 반도체 공정 챔버
JP6971823B2 (ja) * 2017-12-13 2021-11-24 東京エレクトロン株式会社 シリコン含有膜のエッチング方法、コンピュータ記憶媒体、及びシリコン含有膜のエッチング装置
CN214848503U (zh) * 2018-08-29 2021-11-23 应用材料公司 注入器设备、基板处理设备及在机器可读介质中实现的结构
US11257671B2 (en) * 2018-09-28 2022-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system of control of epitaxial growth
FI128855B (en) * 2019-09-24 2021-01-29 Picosun Oy FLUID DISTRIBUTOR FOR THIN FILM GROWING EQUIPMENT, RELATED EQUIPMENT AND METHODS
TWI749521B (zh) * 2020-04-13 2021-12-11 大陸商蘇州雨竹機電有限公司 具串聯式冷卻室之多流道氣體噴射器
US20220290293A1 (en) * 2021-03-15 2022-09-15 HelioSource Tech, LLC Hardware and processes for in operando deposition shield replacement/surface cleaning
CN119889750B (zh) * 2025-01-13 2025-11-28 西北工业大学 一种棱柱型triso颗粒弥散增材燃料元件及其制备方法和应用

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050079692A1 (en) * 2003-10-10 2005-04-14 Applied Materials, Inc. Methods to fabricate MOSFET devices using selective deposition process
US20050277272A1 (en) * 2004-06-10 2005-12-15 Applied Materials, Inc. Low temperature epitaxial growth of silicon-containing films using UV radiation

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4613400A (en) 1985-05-20 1986-09-23 Applied Materials, Inc. In-situ photoresist capping process for plasma etching
US4963506A (en) * 1989-04-24 1990-10-16 Motorola Inc. Selective deposition of amorphous and polycrystalline silicon
US5108792A (en) 1990-03-09 1992-04-28 Applied Materials, Inc. Double-dome reactor for semiconductor processing
US5179677A (en) 1990-08-16 1993-01-12 Applied Materials, Inc. Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity
JP3149464B2 (ja) * 1991-06-28 2001-03-26 日本電気株式会社 シリコンエピタキシャル膜の選択成長方法及びその装置
DE69421463T2 (de) * 1993-07-30 2000-02-10 Applied Materials, Inc. Ablagerung des Siliziumnitrids
US5916369A (en) 1995-06-07 1999-06-29 Applied Materials, Inc. Gas inlets for wafer processing chamber
EP0967633A1 (en) * 1993-07-30 1999-12-29 Applied Materials, Inc. Gas inlets for wafer processing chamber
JP3761918B2 (ja) * 1994-09-13 2006-03-29 株式会社東芝 半導体装置の製造方法
JP3725598B2 (ja) * 1996-01-12 2005-12-14 東芝セラミックス株式会社 エピタキシャルウェハの製造方法
US6011031A (en) * 1997-05-30 2000-01-04 Dr. Reddy's Research Foundation Azolidinediones useful for the treatment of diabetes, dyslipidemia and hypertension: process for their preparation and pharmaceutical compositions containing them
US6037273A (en) 1997-07-11 2000-03-14 Applied Materials, Inc. Method and apparatus for insitu vapor generation
US6159866A (en) 1998-03-02 2000-12-12 Applied Materials, Inc. Method for insitu vapor generation for forming an oxide on a substrate
US6951827B2 (en) * 2000-03-15 2005-10-04 Tufts University Controlling surface chemistry on solid substrates
US6900133B2 (en) 2002-09-18 2005-05-31 Applied Materials, Inc Method of etching variable depth features in a crystalline substrate
US6972228B2 (en) * 2003-03-12 2005-12-06 Intel Corporation Method of forming an element of a microelectronic circuit
US7107820B2 (en) * 2003-05-02 2006-09-19 Praxair S.T. Technology, Inc. Integrated gas supply and leak detection system
US7166528B2 (en) * 2003-10-10 2007-01-23 Applied Materials, Inc. Methods of selective deposition of heavily doped epitaxial SiGe
DE102004061036B4 (de) * 2004-12-18 2008-10-30 Daimler Ag Windschutz für Cabriolets
US7816236B2 (en) 2005-02-04 2010-10-19 Asm America Inc. Selective deposition of silicon-containing films

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050079692A1 (en) * 2003-10-10 2005-04-14 Applied Materials, Inc. Methods to fabricate MOSFET devices using selective deposition process
US20050277272A1 (en) * 2004-06-10 2005-12-15 Applied Materials, Inc. Low temperature epitaxial growth of silicon-containing films using UV radiation

Also Published As

Publication number Publication date
KR101237868B1 (ko) 2013-03-04
US20070170148A1 (en) 2007-07-26
JP2009531872A (ja) 2009-09-03
TWI379346B (en) 2012-12-11
KR20090012206A (ko) 2009-02-02
US7709391B2 (en) 2010-05-04
WO2008127220A3 (en) 2009-04-16
TW200729304A (en) 2007-08-01
WO2008127220A2 (en) 2008-10-23
JP5420397B2 (ja) 2014-02-19
KR20110023880A (ko) 2011-03-08

Similar Documents

Publication Publication Date Title
KR101024194B1 (ko) 막 형성 프로세스들에서 반응성 식각 및 성장 종의 인-시튜생성 방법
TWI843623B (zh) 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構
US7262116B2 (en) Low temperature epitaxial growth of silicon-containing films using close proximity UV radiation
KR102511483B1 (ko) 딥 트렌치에서의 저온 선택적 에피택시를 위한 방법 및 장치
US5089441A (en) Low-temperature in-situ dry cleaning process for semiconductor wafers
US7648927B2 (en) Method for forming silicon-containing materials during a photoexcitation deposition process
US7629267B2 (en) High stress nitride film and method for formation thereof
US7651955B2 (en) Method for forming silicon-containing materials during a photoexcitation deposition process
KR101002445B1 (ko) 단일 웨이퍼 저압 화학 기상 증착을 이용한 실리콘 산화물 및 옥시나이트라이드 증착 방법
TW202035764A (zh) 選擇性沉積氮化矽層之方法及包括經選擇性沉積氮化矽層之結構
US20060286774A1 (en) Method for forming silicon-containing materials during a photoexcitation deposition process
US7029995B2 (en) Methods for depositing amorphous materials and using them as templates for epitaxial films by solid phase epitaxy
US20100273291A1 (en) Decontamination of mocvd chamber using nh3 purge after in-situ cleaning
KR101571619B1 (ko) 성막 방법 및 성막 장치
JP2009531872A5 (enExample)
JP2014143416A (ja) 有機金属共反応物を用いた交差メタセシス反応によりＳｉＣおよびＳｉＣＮ膜を成膜するための装置及び方法
JPH06252057A (ja) 半導体装置の製造方法
KR20060093740A (ko) 동일 챔버에서의 산화물층 및 실리콘층의 성장
JP2002539327A (ja) 基板表面への金属酸化物の化学的気相成長法による成膜方法および装置
WO2010129289A2 (en) Decontamination of mocvd chamber using nh3 purge after in-situ cleaning
KR100938301B1 (ko) 기판 표면 및 챔버 표면을 위한 식각액 처리 공정
KR20250096803A (ko) 도핑된 반도체 에피택셜 층을 위한 탄소-함유 캡 층
KR101176668B1 (ko) Ｕｖ 방사를 이용한 실리콘-함유 막들의 저온 에피택셜 성장
CN120967508A (zh) 碳化硅外延片的生长方法及碳化硅外延片
TW202507810A (zh) 半導體處理系統及材料層沉積方法

Legal Events

Date Code Title Description
A201 Request for examination
AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

A107 Divisional application of patent
AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

J201 Request for trial against refusal decision
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

B701 Decision to grant
PB0701 Decision of registration after re-examination before a trial

St.27 status event code: A-3-4-F10-F13-rex-PB0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20140227

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20150227

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20160316

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20160316