KR101017847B1 - 가변 판독 임계값을 갖는 비휘발성 메모리 - Google Patents

가변 판독 임계값을 갖는 비휘발성 메모리 Download PDF

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KR101017847B1
KR101017847B1 KR1020097010854A KR20097010854A KR101017847B1 KR 101017847 B1 KR101017847 B1 KR 101017847B1 KR 1020097010854 A KR1020097010854 A KR 1020097010854A KR 20097010854 A KR20097010854 A KR 20097010854A KR 101017847 B1 KR101017847 B1 KR 101017847B1
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South Korea
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memory
voltages
flash memory
voltage
threshold
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KR1020097010854A
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Korean (ko)
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KR20090089342A (ko
Inventor
이갈 브란드만
케빈 엠. 콘레이
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쌘디스크 코포레이션
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Priority claimed from US11/556,615 external-priority patent/US7904788B2/en
Priority claimed from US11/556,626 external-priority patent/US7558109B2/en
Application filed by 쌘디스크 코포레이션 filed Critical 쌘디스크 코포레이션
Publication of KR20090089342A publication Critical patent/KR20090089342A/ko
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Assigned to 샌디스크 테크놀로지스 엘엘씨 reassignment 샌디스크 테크놀로지스 엘엘씨 권리의 전부이전등록 Assignors: 쌘디스크 코포레이션
Assigned to 샌디스크 테크놀로지스 아이엔씨. reassignment 샌디스크 테크놀로지스 아이엔씨. 권리의 전부이전등록 Assignors: 샌디스크 테크놀로지스 엘엘씨
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0411—Online error correction

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
KR1020097010854A 2006-11-03 2007-10-29 가변 판독 임계값을 갖는 비휘발성 메모리 Active KR101017847B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/556,615 2006-11-03
US11/556,626 2006-11-03
US11/556,615 US7904788B2 (en) 2006-11-03 2006-11-03 Methods of varying read threshold voltage in nonvolatile memory
US11/556,626 US7558109B2 (en) 2006-11-03 2006-11-03 Nonvolatile memory with variable read threshold

Publications (2)

Publication Number Publication Date
KR20090089342A KR20090089342A (ko) 2009-08-21
KR101017847B1 true KR101017847B1 (ko) 2011-03-04

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KR1020097010854A Active KR101017847B1 (ko) 2006-11-03 2007-10-29 가변 판독 임계값을 갖는 비휘발성 메모리

Country Status (5)

Country Link
EP (1) EP2084709B1 (https=)
JP (1) JP5409371B2 (https=)
KR (1) KR101017847B1 (https=)
TW (1) TWI390533B (https=)
WO (1) WO2008057822A2 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7904788B2 (en) 2006-11-03 2011-03-08 Sandisk Corporation Methods of varying read threshold voltage in nonvolatile memory
KR101378602B1 (ko) * 2008-05-13 2014-03-25 삼성전자주식회사 메모리 장치 및 메모리 프로그래밍 방법
KR101628413B1 (ko) * 2008-07-01 2016-06-08 엘에스아이 코포레이션 플래시 메모리 디바이스 내의 타겟 셀 판독 방법 및 시스템, 플래시 메모리 내의 방해를 특징화하는 방법
US8671327B2 (en) 2008-09-28 2014-03-11 Sandisk Technologies Inc. Method and system for adaptive coding in flash memories
KR101738173B1 (ko) * 2008-09-28 2017-05-19 라모트 앳 텔-아비브 유니버시티 리미티드 플래시 메모리에서의 적응형 코딩 방법 및 시스템
CN102203875B (zh) 2008-09-30 2016-08-03 Lsi公司 使用参考单元的用于存储器器件的软数据生成的方法和装置
US8107306B2 (en) 2009-03-27 2012-01-31 Analog Devices, Inc. Storage devices with soft processing
KR101792868B1 (ko) * 2010-11-25 2017-11-02 삼성전자주식회사 플래시 메모리 장치 및 그것의 읽기 방법
US9898361B2 (en) 2011-01-04 2018-02-20 Seagate Technology Llc Multi-tier detection and decoding in flash memories
US9292377B2 (en) 2011-01-04 2016-03-22 Seagate Technology Llc Detection and decoding in flash memories using correlation of neighboring bits and probability based reliability values
US8446786B2 (en) 2011-01-20 2013-05-21 Micron Technology, Inc. Outputting a particular data quantization from memory
US9502117B2 (en) * 2011-03-14 2016-11-22 Seagate Technology Llc Cell-level statistics collection for detection and decoding in flash memories
US9058289B2 (en) * 2011-11-07 2015-06-16 Sandisk Enterprise Ip Llc Soft information generation for memory systems
US8719647B2 (en) 2011-12-15 2014-05-06 Micron Technology, Inc. Read bias management to reduce read errors for phase change memory
US9257203B2 (en) 2012-12-06 2016-02-09 Micron Technology, Inc. Setting a default read signal based on error correction
KR102025193B1 (ko) 2013-02-19 2019-09-25 삼성전자주식회사 메모리 컨트롤러 및 그것의 동작 방법, 메모리 컨트롤러를 포함하는 메모리 시스템
US9633749B2 (en) 2013-12-19 2017-04-25 Sandisk Technologies Llc System and method of managing tags associated with read voltages
KR102284658B1 (ko) * 2015-03-19 2021-08-02 삼성전자 주식회사 비휘발성 메모리 장치, 이를 포함하는 메모리 시스템 및 상기 비휘발성 메모리 장치의 동작 방법
JP6545631B2 (ja) 2016-03-02 2019-07-17 東芝メモリ株式会社 不揮発性半導体記憶装置
US12283298B2 (en) 2022-09-12 2025-04-22 International Business Machines Corporation Magnetoresistive random access memory with data scrubbing

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6339546B1 (en) 1999-09-17 2002-01-15 Hitachi, Ltd. Storage device counting error correction

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3200012B2 (ja) * 1996-04-19 2001-08-20 株式会社東芝 記憶システム
JP3930074B2 (ja) * 1996-09-30 2007-06-13 株式会社ルネサステクノロジ 半導体集積回路及びデータ処理システム
JP2005078721A (ja) * 2003-09-01 2005-03-24 Nippon Telegr & Teleph Corp <Ntt> 誤り訂正方法およびメモリ回路
JP4427361B2 (ja) * 2004-03-16 2010-03-03 株式会社東芝 不揮発性半導体メモリ

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6339546B1 (en) 1999-09-17 2002-01-15 Hitachi, Ltd. Storage device counting error correction

Also Published As

Publication number Publication date
JP5409371B2 (ja) 2014-02-05
TW200836201A (en) 2008-09-01
TWI390533B (zh) 2013-03-21
KR20090089342A (ko) 2009-08-21
EP2084709B1 (en) 2014-04-02
EP2084709A2 (en) 2009-08-05
JP2010509700A (ja) 2010-03-25
WO2008057822A3 (en) 2008-12-31
WO2008057822A2 (en) 2008-05-15

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