KR101003958B1 - 메트롤러지 파형의 신호 프로세싱을 통한 비정규포토레지스트 라인/공간 프로파일 검출 - Google Patents

메트롤러지 파형의 신호 프로세싱을 통한 비정규포토레지스트 라인/공간 프로파일 검출 Download PDF

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KR101003958B1
KR101003958B1 KR1020030033218A KR20030033218A KR101003958B1 KR 101003958 B1 KR101003958 B1 KR 101003958B1 KR 1020030033218 A KR1020030033218 A KR 1020030033218A KR 20030033218 A KR20030033218 A KR 20030033218A KR 101003958 B1 KR101003958 B1 KR 101003958B1
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South Korea
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waveform
feature
features
metrology
patterned
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Korean (ko)
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KR20030091785A (ko
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휴즈에릭초
제슨스코트
매킨토시존마틴
바르툴리카트린
스티비프레드안토니
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에이저 시스템즈 인크
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020030033218A 2002-05-24 2003-05-24 메트롤러지 파형의 신호 프로세싱을 통한 비정규포토레지스트 라인/공간 프로파일 검출 Expired - Fee Related KR101003958B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/156,242 US6708574B2 (en) 2002-05-24 2002-05-24 Abnormal photoresist line/space profile detection through signal processing of metrology waveform
US10/156,242 2002-05-24

Publications (2)

Publication Number Publication Date
KR20030091785A KR20030091785A (ko) 2003-12-03
KR101003958B1 true KR101003958B1 (ko) 2010-12-30

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KR1020030033218A Expired - Fee Related KR101003958B1 (ko) 2002-05-24 2003-05-24 메트롤러지 파형의 신호 프로세싱을 통한 비정규포토레지스트 라인/공간 프로파일 검출

Country Status (5)

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US (1) US6708574B2 (enExample)
JP (1) JP4964400B2 (enExample)
KR (1) KR101003958B1 (enExample)
GB (1) GB2392310B (enExample)
TW (1) TWI279872B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004031721B4 (de) * 2004-06-30 2006-06-29 Infineon Technologies Ag Verfahren und Vorrichtung zur automatischen Inspektion von strukturierten Halbleiteroberflächen
JP2011192837A (ja) * 2010-03-15 2011-09-29 Toshiba Corp 評価装置および評価方法
CN119108296B (zh) * 2024-09-03 2025-10-03 浙江创芯集成电路有限公司 半导体结构的量测分析方法和装置、可读存储介质

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001272219A (ja) 2000-03-24 2001-10-05 Fujitsu Ltd 線幅測定方法
KR100314131B1 (ko) 1999-10-16 2001-11-15 윤종용 도전성 패턴 결함을 선택적으로 검사하는 웨이퍼 검사시스템 및 그 검사방법

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US4983253A (en) * 1988-05-27 1991-01-08 University Of Houston-University Park Magnetically enhanced RIE process and apparatus
JPH0291504A (ja) * 1988-09-28 1990-03-30 Ricoh Co Ltd 微細パターンの断面プロファイルの検査方法
JP3148353B2 (ja) * 1991-05-30 2001-03-19 ケーエルエー・インストルメンツ・コーポレーション 電子ビーム検査方法とそのシステム
JP3730263B2 (ja) * 1992-05-27 2005-12-21 ケーエルエー・インストルメンツ・コーポレーション 荷電粒子ビームを用いた自動基板検査の装置及び方法
US5717204A (en) * 1992-05-27 1998-02-10 Kla Instruments Corporation Inspecting optical masks with electron beam microscopy
JP3235078B2 (ja) * 1993-02-24 2001-12-04 株式会社ニコン 走査露光方法、露光制御装置、走査型露光装置、及びデバイス製造方法
US5642158A (en) * 1994-05-02 1997-06-24 Cognex Corporation Method and apparatus to detect capillary indentations
JP3589365B2 (ja) * 1996-02-02 2004-11-17 富士写真フイルム株式会社 ポジ画像形成組成物
US5969273A (en) * 1998-02-12 1999-10-19 International Business Machines Corporation Method and apparatus for critical dimension and tool resolution determination using edge width
US6426501B1 (en) * 1998-05-27 2002-07-30 Jeol Ltd. Defect-review SEM, reference sample for adjustment thereof, method for adjustment thereof, and method of inspecting contact holes
JPH11345754A (ja) * 1998-06-01 1999-12-14 Matsushita Electron Corp 半導体装置の検査方法及び製造方法
KR20000004485A (ko) * 1998-06-30 2000-01-25 김영환 반도체 소자의 미세패턴 형성방법
US6324298B1 (en) * 1998-07-15 2001-11-27 August Technology Corp. Automated wafer defect inspection system and a process of performing such inspection
US6337174B1 (en) * 1998-09-17 2002-01-08 Samsung Electronics Co., Ltd. Method of stripping a photoresist from a semiconductor substrate dimethylacetamide or a combination of monoethanolamine and dimethylsulfoxide
US6132940A (en) * 1998-12-16 2000-10-17 International Business Machines Corporation Method for producing constant profile sidewalls
US6197455B1 (en) * 1999-01-14 2001-03-06 Advanced Micro Devices, Inc. Lithographic mask repair using a scanning tunneling microscope
TW392228B (en) * 1999-01-19 2000-06-01 United Microelectronics Corp Method for removing photoresist on wafer edge in manufacturing semiconductor devices
US6298470B1 (en) * 1999-04-15 2001-10-02 Micron Technology, Inc. Method for efficient manufacturing of integrated circuits
US6407396B1 (en) * 1999-06-24 2002-06-18 International Business Machines Corporation Wafer metrology structure
JP2001143982A (ja) * 1999-06-29 2001-05-25 Applied Materials Inc 半導体デバイス製造のための統合臨界寸法制御
US6174739B1 (en) * 1999-06-30 2001-01-16 Advanced Micro Devices, Inc. Method of monitoring via and trench profiles during manufacture
US6258610B1 (en) * 1999-07-02 2001-07-10 Agere Systems Guardian Corp. Method analyzing a semiconductor surface using line width metrology with auto-correlation operation
US6326618B1 (en) * 1999-07-02 2001-12-04 Agere Systems Guardian Corp. Method of analyzing semiconductor surface with patterned feature using line width metrology
US6225639B1 (en) * 1999-08-27 2001-05-01 Agere Systems Guardian Corp. Method of monitoring a patterned transfer process using line width metrology
US6340602B1 (en) * 1999-12-10 2002-01-22 Sensys Instruments Method of measuring meso-scale structures on wafers
US6245581B1 (en) * 2000-04-19 2001-06-12 Advanced Micro Devices, Inc. Method and apparatus for control of critical dimension using feedback etch control

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100314131B1 (ko) 1999-10-16 2001-11-15 윤종용 도전성 패턴 결함을 선택적으로 검사하는 웨이퍼 검사시스템 및 그 검사방법
JP2001272219A (ja) 2000-03-24 2001-10-05 Fujitsu Ltd 線幅測定方法

Also Published As

Publication number Publication date
JP2003347377A (ja) 2003-12-05
US6708574B2 (en) 2004-03-23
TWI279872B (en) 2007-04-21
GB2392310B (en) 2005-09-21
GB2392310A (en) 2004-02-25
US20030219916A1 (en) 2003-11-27
KR20030091785A (ko) 2003-12-03
TW200409261A (en) 2004-06-01
GB0308961D0 (en) 2003-05-28
JP4964400B2 (ja) 2012-06-27

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