KR100994017B1 - 마스크를 이용한 패턴의 제조방법 - Google Patents
마스크를 이용한 패턴의 제조방법 Download PDFInfo
- Publication number
- KR100994017B1 KR100994017B1 KR1020070129012A KR20070129012A KR100994017B1 KR 100994017 B1 KR100994017 B1 KR 100994017B1 KR 1020070129012 A KR1020070129012 A KR 1020070129012A KR 20070129012 A KR20070129012 A KR 20070129012A KR 100994017 B1 KR100994017 B1 KR 100994017B1
- Authority
- KR
- South Korea
- Prior art keywords
- mask
- substrate
- flexible
- pattern
- magnet
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 114
- 238000000034 method Methods 0.000 claims abstract description 59
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 238000000059 patterning Methods 0.000 abstract description 24
- 239000000463 material Substances 0.000 abstract description 18
- 238000000151 deposition Methods 0.000 abstract description 12
- 230000008021 deposition Effects 0.000 abstract description 12
- 230000007261 regionalization Effects 0.000 abstract description 5
- 238000012546 transfer Methods 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 7
- 230000004907 flux Effects 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000005452 bending Methods 0.000 description 5
- 238000010924 continuous production Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000002985 plastic film Substances 0.000 description 4
- 229920006255 plastic film Polymers 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- 238000000879 optical micrograph Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- -1 polyethylene terephthalate Polymers 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 2
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910001374 Invar Inorganic materials 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000002294 plasma sputter deposition Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 239000011188 CEM-1 Substances 0.000 description 1
- 239000011190 CEM-3 Substances 0.000 description 1
- 101100257127 Caenorhabditis elegans sma-2 gene Proteins 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (7)
- 임의의 형상을 가진 기재 상에 마스크를 이용하여 패턴을 제조하는 방법으로서, 패턴 형성될 일측에 자력에 의해 부착 가능한 플렉시블 마스크(flexible mask)를 위치시키고, 패턴 형성될 일측의 반대측에 플렉시블 자석을 기재와 밀착시키는 것이 특징인 패턴의 제조방법.
- 제 1항에 있어서, 상기 기재는 플렉시블 기재이며, 이를 롤투롤(Roll-to-roll) 공정에 의해 패터닝하는 것이 특징인 패턴의 제조방법.
- 제 1항에 있어서, 상기 플렉시블 자석은 상기 플렉시블 마스크의 크기와 동일하거나 더 큰 것이 특징인 패턴의 제조방법.
- 제 1항에 있어서, 상기 플렉시블 자석은 0.1 ~ 10mm 범위의 두께를 갖는 고무자석(Rubber Magnet) 인 것이 특징인 패턴의 제조방법.
- 제 1항에 있어서, 상기 플렉시블 마스크는 0.01 ~ 5mm 범위의 두께를 가지며, 철, 니켈 및 코발트로 구성된 군에서 선택된 원소의 단일 금속 또는 2종 이상의 합금으로 된 것이 특징인 패턴의 제조방법.
- 제 1항에 있어서, 전자석을 이용한 마스크 위치 제어 시스템이 부가된 것이 특징인 패턴의 제조방법.
- 임의의 형상을 가진 기재; 상기 기재 상의 패턴 형성될 일측에서 기재와 밀착된, 자력에 의해 부착 가능한 플렉시블 마스크(flexible mask); 및 상기 기재 상의 패턴 형성될 일측의 반대측에 위치한 플렉시블 자석을 포함하는, 마스크를 이용한 패터닝 시스템.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070129012A KR100994017B1 (ko) | 2007-12-12 | 2007-12-12 | 마스크를 이용한 패턴의 제조방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070129012A KR100994017B1 (ko) | 2007-12-12 | 2007-12-12 | 마스크를 이용한 패턴의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090061971A KR20090061971A (ko) | 2009-06-17 |
KR100994017B1 true KR100994017B1 (ko) | 2010-11-11 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070129012A KR100994017B1 (ko) | 2007-12-12 | 2007-12-12 | 마스크를 이용한 패턴의 제조방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100994017B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101307096B1 (ko) * | 2012-08-09 | 2013-09-11 | 주식회사 야스 | 박막소자를 유연 기판에 제작하는 롤투롤 증착기의 기판 홀딩 장치 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101347552B1 (ko) * | 2011-07-21 | 2014-01-10 | 주식회사 엘지화학 | 마스크 및 이를 포함하는 광학필터 제조장치 |
KR101367183B1 (ko) * | 2012-04-24 | 2014-02-26 | 건국대학교 산학협력단 | Pmma 섀도우마스크 제조방법, pmma 섀도우마스크 및 pmma 섀도우마스크를 이용한 금속패턴 형성방법 |
KR102270080B1 (ko) | 2013-10-30 | 2021-06-29 | 삼성디스플레이 주식회사 | 박막 증착 장치 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003173872A (ja) | 2001-12-06 | 2003-06-20 | Sony Corp | アライメント方法、パターン形成方法及びアライメント装置、並びに有機エレクトロルミネッセンス表示装置及びその製造方法 |
JP2004079349A (ja) | 2002-08-19 | 2004-03-11 | Sony Corp | 薄膜形成装置 |
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2007
- 2007-12-12 KR KR1020070129012A patent/KR100994017B1/ko active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003173872A (ja) | 2001-12-06 | 2003-06-20 | Sony Corp | アライメント方法、パターン形成方法及びアライメント装置、並びに有機エレクトロルミネッセンス表示装置及びその製造方法 |
JP2004079349A (ja) | 2002-08-19 | 2004-03-11 | Sony Corp | 薄膜形成装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101307096B1 (ko) * | 2012-08-09 | 2013-09-11 | 주식회사 야스 | 박막소자를 유연 기판에 제작하는 롤투롤 증착기의 기판 홀딩 장치 |
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Publication number | Publication date |
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KR20090061971A (ko) | 2009-06-17 |
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