KR100958112B1 - 배기라인용 히팅 파이프 및 반도체 공정의 배기라인 구조 - Google Patents

배기라인용 히팅 파이프 및 반도체 공정의 배기라인 구조 Download PDF

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Publication number
KR100958112B1
KR100958112B1 KR1020090087134A KR20090087134A KR100958112B1 KR 100958112 B1 KR100958112 B1 KR 100958112B1 KR 1020090087134 A KR1020090087134 A KR 1020090087134A KR 20090087134 A KR20090087134 A KR 20090087134A KR 100958112 B1 KR100958112 B1 KR 100958112B1
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KR
South Korea
Prior art keywords
pipe
exhaust line
heat
heating
insulating material
Prior art date
Application number
KR1020090087134A
Other languages
English (en)
Korean (ko)
Inventor
박영수
Original Assignee
박영수
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 박영수 filed Critical 박영수
Priority to KR1020090087134A priority Critical patent/KR100958112B1/ko
Application granted granted Critical
Publication of KR100958112B1 publication Critical patent/KR100958112B1/ko
Priority to PCT/KR2010/005672 priority patent/WO2011034293A2/ko
Priority to CN 201010262457 priority patent/CN102022601B/zh
Priority to TW99128651A priority patent/TW201132884A/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Pipe Accessories (AREA)
  • Thermal Insulation (AREA)
  • Exhaust Silencers (AREA)
KR1020090087134A 2009-09-15 2009-09-15 배기라인용 히팅 파이프 및 반도체 공정의 배기라인 구조 KR100958112B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020090087134A KR100958112B1 (ko) 2009-09-15 2009-09-15 배기라인용 히팅 파이프 및 반도체 공정의 배기라인 구조
PCT/KR2010/005672 WO2011034293A2 (ko) 2009-09-15 2010-08-25 배기라인용 히팅 파이프 및 반도체 공정의 배기라인 구조
CN 201010262457 CN102022601B (zh) 2009-09-15 2010-08-25 用于排出线的加热管及半导体工程的排出线结构
TW99128651A TW201132884A (en) 2009-09-15 2010-08-26 Heating pipe for an exhaust line, and exhaust line structure for a semiconductor manufacturing process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020090087134A KR100958112B1 (ko) 2009-09-15 2009-09-15 배기라인용 히팅 파이프 및 반도체 공정의 배기라인 구조

Publications (1)

Publication Number Publication Date
KR100958112B1 true KR100958112B1 (ko) 2010-05-18

Family

ID=42281746

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090087134A KR100958112B1 (ko) 2009-09-15 2009-09-15 배기라인용 히팅 파이프 및 반도체 공정의 배기라인 구조

Country Status (4)

Country Link
KR (1) KR100958112B1 (zh)
CN (1) CN102022601B (zh)
TW (1) TW201132884A (zh)
WO (1) WO2011034293A2 (zh)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101075170B1 (ko) * 2011-02-01 2011-10-19 주식회사 에스엠아이 반도체 제조공정의 배기라인용 히팅 파이프
KR101368336B1 (ko) 2013-10-25 2014-02-28 주식회사 브이씨알 파우더 고착 방지를 위한 반도체 제조장치의 배출라인 어셈블리
KR101401853B1 (ko) * 2012-11-07 2014-05-29 최성귀 반도체 제조장치의 히팅 파이프
KR102195884B1 (ko) * 2020-06-15 2020-12-28 주식회사 컬처플러스 열전소자를 사용한 에어로졸 샘플러
KR102199310B1 (ko) * 2020-06-15 2021-01-06 주식회사 컬처플러스 실내공기질 측정용 미세먼지 측정기

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106507514B (zh) * 2016-10-21 2020-07-17 北京北方华创微电子装备有限公司 一种具有加热装置的工艺管排气管路及控制方法
KR101820821B1 (ko) * 2017-06-27 2018-01-22 (주)제이솔루션 설치가 용이한 반도체 및 lcd 제조공정의 배기가스 가열용 3중 배관 가열장치
CN117813914A (zh) * 2022-08-01 2024-04-02 巴隆株式会社 管道用除粉装置制造方法及设置方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000024609A (ja) 1998-07-15 2000-01-25 Nec Kansai Ltd 粉体を含むガス用配管
JP2008234939A (ja) * 2007-03-19 2008-10-02 Kawai Denki Seisakusho:Kk 被覆加熱装置
KR20090018779A (ko) * 2007-04-19 2009-02-23 미츠비시 덴센 고교 가부시키가이샤 배기 장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2239556Y (zh) * 1995-12-25 1996-11-06 淄博市临淄镭射技术研究所 多功能复合管
DE19721555A1 (de) * 1997-05-23 1998-11-26 Ruhrgas Ag Vorwärmer für Gas
KR200244239Y1 (ko) * 1999-02-09 2001-09-25 김경균 폐가스 이송용 배관 및 이를 채용한 폐가스처리장치
KR200366263Y1 (ko) * 2004-07-21 2004-11-04 비씨엔씨 주식회사 배기관
JP4528099B2 (ja) * 2004-11-22 2010-08-18 株式会社東京技術研究所 配管の加熱構造
JP5128168B2 (ja) * 2006-04-24 2013-01-23 三菱電線工業株式会社 排気装置
CN201206695Y (zh) * 2008-06-02 2009-03-11 大庆市红岗区龙腾金属管业制造有限责任公司 内热式聚氨酯泡沫夹克管
KR100905289B1 (ko) * 2008-12-10 2009-06-29 (주)화인 반도체공정의 부산물인 배기가스를 배출하는 배기관을 히팅하는 장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000024609A (ja) 1998-07-15 2000-01-25 Nec Kansai Ltd 粉体を含むガス用配管
JP2008234939A (ja) * 2007-03-19 2008-10-02 Kawai Denki Seisakusho:Kk 被覆加熱装置
KR20090018779A (ko) * 2007-04-19 2009-02-23 미츠비시 덴센 고교 가부시키가이샤 배기 장치

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101075170B1 (ko) * 2011-02-01 2011-10-19 주식회사 에스엠아이 반도체 제조공정의 배기라인용 히팅 파이프
KR101401853B1 (ko) * 2012-11-07 2014-05-29 최성귀 반도체 제조장치의 히팅 파이프
KR101368336B1 (ko) 2013-10-25 2014-02-28 주식회사 브이씨알 파우더 고착 방지를 위한 반도체 제조장치의 배출라인 어셈블리
KR102195884B1 (ko) * 2020-06-15 2020-12-28 주식회사 컬처플러스 열전소자를 사용한 에어로졸 샘플러
KR102199310B1 (ko) * 2020-06-15 2021-01-06 주식회사 컬처플러스 실내공기질 측정용 미세먼지 측정기

Also Published As

Publication number Publication date
CN102022601B (zh) 2013-08-07
TW201132884A (en) 2011-10-01
WO2011034293A2 (ko) 2011-03-24
WO2011034293A3 (ko) 2011-07-07
CN102022601A (zh) 2011-04-20

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