WO2011034293A3 - 배기라인용 히팅 파이프 및 반도체 공정의 배기라인 구조 - Google Patents

배기라인용 히팅 파이프 및 반도체 공정의 배기라인 구조 Download PDF

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Publication number
WO2011034293A3
WO2011034293A3 PCT/KR2010/005672 KR2010005672W WO2011034293A3 WO 2011034293 A3 WO2011034293 A3 WO 2011034293A3 KR 2010005672 W KR2010005672 W KR 2010005672W WO 2011034293 A3 WO2011034293 A3 WO 2011034293A3
Authority
WO
WIPO (PCT)
Prior art keywords
exhaust line
heating pipe
manufacturing process
semiconductor manufacturing
corrugated pipe
Prior art date
Application number
PCT/KR2010/005672
Other languages
English (en)
French (fr)
Other versions
WO2011034293A2 (ko
Inventor
박영수
Original Assignee
Park Yeong Su
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Park Yeong Su filed Critical Park Yeong Su
Publication of WO2011034293A2 publication Critical patent/WO2011034293A2/ko
Publication of WO2011034293A3 publication Critical patent/WO2011034293A3/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Pipe Accessories (AREA)
  • Thermal Insulation (AREA)
  • Exhaust Silencers (AREA)

Abstract

본 발명은 배기라인용 히팅 파이프에 관한 것으로서, 양단부에 플랜지부가 형성된 금속 재질의 주름관, 상기 주름관의 외주면에 나선형으로 권취되는 열선부, 상기 열선부의 외측에 위치하는 내열 절연재, 상기 내열 절연층의 외측에 위치하는 보온재 및 상기 주름관의 양 단부 측의 보온재의 외측에 압입되는 링 형상의 압입캡을 포함하는 것을 특징으로 한다. 상기와 같은 본 발명에 따르면, 배관을 원하는 고온으로 유지시켜 가스의 배기라인에서 파우더가 침적되는 현상을 방지할 수 있는 효과가 있다.
PCT/KR2010/005672 2009-09-15 2010-08-25 배기라인용 히팅 파이프 및 반도체 공정의 배기라인 구조 WO2011034293A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0087134 2009-09-15
KR1020090087134A KR100958112B1 (ko) 2009-09-15 2009-09-15 배기라인용 히팅 파이프 및 반도체 공정의 배기라인 구조

Publications (2)

Publication Number Publication Date
WO2011034293A2 WO2011034293A2 (ko) 2011-03-24
WO2011034293A3 true WO2011034293A3 (ko) 2011-07-07

Family

ID=42281746

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/005672 WO2011034293A2 (ko) 2009-09-15 2010-08-25 배기라인용 히팅 파이프 및 반도체 공정의 배기라인 구조

Country Status (4)

Country Link
KR (1) KR100958112B1 (ko)
CN (1) CN102022601B (ko)
TW (1) TW201132884A (ko)
WO (1) WO2011034293A2 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101075170B1 (ko) * 2011-02-01 2011-10-19 주식회사 에스엠아이 반도체 제조공정의 배기라인용 히팅 파이프
KR101401853B1 (ko) * 2012-11-07 2014-05-29 최성귀 반도체 제조장치의 히팅 파이프
KR101368336B1 (ko) 2013-10-25 2014-02-28 주식회사 브이씨알 파우더 고착 방지를 위한 반도체 제조장치의 배출라인 어셈블리
CN106507514B (zh) * 2016-10-21 2020-07-17 北京北方华创微电子装备有限公司 一种具有加热装置的工艺管排气管路及控制方法
KR101820821B1 (ko) * 2017-06-27 2018-01-22 (주)제이솔루션 설치가 용이한 반도체 및 lcd 제조공정의 배기가스 가열용 3중 배관 가열장치
KR102195884B1 (ko) * 2020-06-15 2020-12-28 주식회사 컬처플러스 열전소자를 사용한 에어로졸 샘플러
KR102199310B1 (ko) * 2020-06-15 2021-01-06 주식회사 컬처플러스 실내공기질 측정용 미세먼지 측정기
US12024771B2 (en) * 2022-08-01 2024-07-02 M. I Co., Ltd Method for manufacturing de-powder device for piping, and method for installing same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000024609A (ja) * 1998-07-15 2000-01-25 Nec Kansai Ltd 粉体を含むガス用配管
KR200244239Y1 (ko) * 1999-02-09 2001-09-25 김경균 폐가스 이송용 배관 및 이를 채용한 폐가스처리장치
KR200366263Y1 (ko) * 2004-07-21 2004-11-04 비씨엔씨 주식회사 배기관
JP2007318100A (ja) * 2006-04-24 2007-12-06 Mitsubishi Cable Ind Ltd 排気装置
KR100905289B1 (ko) * 2008-12-10 2009-06-29 (주)화인 반도체공정의 부산물인 배기가스를 배출하는 배기관을 히팅하는 장치

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2239556Y (zh) * 1995-12-25 1996-11-06 淄博市临淄镭射技术研究所 多功能复合管
DE19721555A1 (de) * 1997-05-23 1998-11-26 Ruhrgas Ag Vorwärmer für Gas
JP4528099B2 (ja) * 2004-11-22 2010-08-18 株式会社東京技術研究所 配管の加熱構造
JP2008234939A (ja) * 2007-03-19 2008-10-02 Kawai Denki Seisakusho:Kk 被覆加熱装置
CN101542019B (zh) * 2007-04-19 2011-01-12 三菱电线工业株式会社 排气系统
CN201206695Y (zh) * 2008-06-02 2009-03-11 大庆市红岗区龙腾金属管业制造有限责任公司 内热式聚氨酯泡沫夹克管

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000024609A (ja) * 1998-07-15 2000-01-25 Nec Kansai Ltd 粉体を含むガス用配管
KR200244239Y1 (ko) * 1999-02-09 2001-09-25 김경균 폐가스 이송용 배관 및 이를 채용한 폐가스처리장치
KR200366263Y1 (ko) * 2004-07-21 2004-11-04 비씨엔씨 주식회사 배기관
JP2007318100A (ja) * 2006-04-24 2007-12-06 Mitsubishi Cable Ind Ltd 排気装置
KR100905289B1 (ko) * 2008-12-10 2009-06-29 (주)화인 반도체공정의 부산물인 배기가스를 배출하는 배기관을 히팅하는 장치

Also Published As

Publication number Publication date
TW201132884A (en) 2011-10-01
CN102022601A (zh) 2011-04-20
CN102022601B (zh) 2013-08-07
WO2011034293A2 (ko) 2011-03-24
KR100958112B1 (ko) 2010-05-18

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