KR100955382B1 - Liquid crystal display device and method for fabricating the same - Google Patents

Abstract

The present invention relates to a liquid crystal display device and a manufacturing method thereof, the liquid crystal display device according to the present invention includes a gate wiring and a data wiring to define a pixel area crossing each other on the substrate; A data wiring shielding common electrode arranged at both sides of the data wiring; A thin film transistor formed at an intersection point of the gate line and the data line; A black matrix disposed on a substrate including the data line and the gate line and overlapping the data line and the data line shielding common electrode; A color filter disposed on the pixel area where the gate line and the data line cross each other; A pixel electrode connected to the thin film transistor; And a common electrode arranged on the black matrix.

Color filter, data wiring shielding common electrode, disclination, COT

Description

Liquid crystal display and its manufacturing method {LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME}

1 is a plan view schematically illustrating a general liquid crystal display device;

2 is a cross-sectional view of the liquid crystal display device taken along the line II-II of FIG.

3 is a plan view schematically showing a liquid crystal display device having a COT structure according to the prior art.

4A to 4E are cross-sectional views of the liquid crystal display of the COT structure taken along the line IV-IV of FIG.

5A to 5D are layout layout flowcharts of a liquid crystal display device having a COT structure according to the present invention.

6A to 6F are cross-sectional views illustrating a manufacturing process of a liquid crystal display device having a COT structure taken along lines VIa-VIa and VIb-VIb of FIG. 5D.

-Code description of main parts of drawing-

200: substrate 202: gate wiring

204: gate electrode 206: capacitor electrode wiring

206a: data wiring shielding common electrode 206b: capacitor portion

206: common electrode wiring 208: first insulating film

      210: active layer 212: ohmic contact layer 214: data wiring 216: source electrode

218: drain electrode 220: second insulating film

222 black matrix 224 color filter

226: unevenness 228: third insulating film

229: contact hole 230, 230a: pixel electrode

232, 232a: common electrode

The present invention relates to a liquid crystal display device, and more particularly, to a liquid crystal display device having a color filter on TFT (COT) structure and a manufacturing method thereof.

In general, a liquid crystal display device displays an image by using optical anisotropy and birefringence characteristics of liquid crystal molecules. When an electric field is applied, the alignment of the liquid crystals is changed and the light transmitting characteristics are changed according to the changed alignment direction of the liquid crystals.

In addition, the liquid crystal display device is formed by arranging two substrates on which the field generating electrodes are formed so that the surfaces on which the two electrodes are formed face each other, injecting a liquid crystal material between the two substrates, and then applying a voltage to the two electrodes. By moving the liquid crystal molecules by the electric field, the device expresses the image by the transmittance of light that varies accordingly.

This general liquid crystal display will be described with reference to FIG. 1.

1 is a plan view schematically illustrating a general liquid crystal display device.

Referring to FIG. 1, a general liquid crystal display device 11 includes a color filter (not shown) including a black matrix (not shown) configured between a sub color filter (not shown) and each sub color filter (not shown). An upper substrate (not shown) on which a common electrode (not shown) deposited on the color filter (not shown), a pixel region P is defined, and a pixel electrode (not shown) and a switching element T are defined in the pixel region. And a liquid crystal (not shown) is filled between the lower substrate (not shown) and the upper substrate (not shown) and the lower substrate (not shown) where array wiring is formed around the pixel region P. .

Here, the lower substrate is also referred to as an array substrate. In this lower substrate, a thin film transistor T, which is a switching element, is arranged in a matrix form, and the gate wiring 13 and the data wiring 15 passing through the plurality of thin film transistors cross each other. ) Is formed.

In addition, the pixel region P is a region defined by the gate wiring 13 and the data wiring 15 crossing each other, and the pixel electrode P is transparent as described above.

(17) is formed. Here, the pixel electrode 17 uses a transparent conductive metal having a relatively high transmittance of light, such as indium-tin-oxide (ITO).

In addition, a storage capacitor C connected in parallel with the pixel electrode 17 is formed on the gate wiring 13, and a portion of the gate wiring 13 is used as the first electrode of the storage capacitor C. As the second electrode, an island-shaped source / drain metal layer 30 formed of the same material as the source and drain electrodes is used. Here, the source / drain metal layer 30 is configured to be in contact with the pixel electrode 17 to receive a signal of the pixel electrode.

As described above, in the case where the upper color filter substrate (not shown) and the lower array substrate (not shown) are bonded to each other to produce a liquid crystal panel, the bonding error between the color filter substrate (not shown) and the array substrate (not shown) is prevented. It is very likely that light leakage will occur.

A method of manufacturing a general liquid crystal display device configured as described above will be described with reference to FIG. 2.

FIG. 2 is a cross-sectional view of the liquid crystal display device taken along the line II-II of FIG. 1.

Referring to FIG. 2, a method of manufacturing a general liquid crystal display device is first arranged so that the lower substrate 22, which is an array substrate, and the upper substrate 5, which is a color filter substrate, are spaced apart from each other, and the lower and upper substrates 22, 5 are separated from each other. The liquid crystal layer 14 is injected in between.

In addition, a thin film transistor T including a gate electrode 32, an active layer 34, a source electrode 36, and a drain electrode 38 is disposed on the lower substrate 22, and the thin film transistor.

On the upper portion of the (T) is formed a protective film 40 for protecting it.

In the pixel region P, a transparent pixel electrode 17 is formed in contact with the drain electrode 38 of the thin film transistor T, and a storage capacitor C connected in parallel with the pixel electrode 17 is formed. The upper portion of the gate wiring 13 is configured.

In addition, the upper substrate 5 includes the black matrix 6 corresponding to the gate wiring 13, the data wiring 15, and the thin film transistor T, and the pixel region of the lower substrate 22.

Red, green, and blue color filters 8a, 8b, and 8c corresponding to (P) are formed. In this case, the general array substrate is formed such that the data line 15 and the pixel electrode 17 are spaced apart by a predetermined distance A to prevent vertical cross talk, and the gate line 13 and the pixel electrode are spaced apart from each other. (17) It is also formed so as to be spaced apart by a predetermined interval (B).

Since the spaces A and B spaced apart between the data line 15 and the gate line 13 and the pixel electrode 17 are regions where light leakage occurs, the black matrix 6 formed on the upper substrate 5 is formed. ) Covers this part.

In addition, the black matrix 6 formed on the upper portion of the thin film transistor T serves to block the light so that the light radiated from the outside does not affect the active layer 34 through the passivation layer 40.

However, the bonding error during the process of bonding the upper substrate 5 and the lower substrate 22

(misalign) may occur, and in view of this, the aperture ratio is reduced by designing the black matrix 6 with a constant margin.

In addition, when the bonding error beyond the margin occurs, there is often a case of light leakage defects in which the light leakage regions A and B are not covered by the black matrix 6.

Therefore, in this case, since the light leakage appears to the outside, there is a problem of lowering the image quality.

As described above, the general liquid crystal display device adopts a method of manufacturing a color filter substrate and a thin film transistor array substrate through different processes and bonding them as the most common method.

Recently, a new concept of thin film transistor array design, a color filter on TFT (COT) method, which forms a color filter on a thin film transistor array substrate, has been introduced.

The conventional COT type liquid crystal display device is manufactured by forming a thin film transistor, which is a switching element, and then forming red, green, and blue color resins on the thin film transistor.

The liquid crystal display of the COT structure according to the related art will be described with reference to FIG. 3 as follows.

3 is a plan view schematically illustrating a liquid crystal display device having a COT structure according to the related art.

Referring to FIG. 3, the liquid crystal display of the COT structure according to the related art is configured such that the gate wiring 102 and the data wiring 116 are arranged to cross each other, and the gate electrode is disposed at the intersection of the two wirings 102 and 116. The thin film transistor T including the 104, the active layer 108, and the source / drain electrodes 112 and 114 is disposed.

In addition, a drain electrode is formed in an area defined by the two interconnections 102 and 116 crossing each other.

Transparent electrodes (not shown) in contact with 114 and color filters 124a, 124b, and 124c are formed.

The transparent electrode (not shown) is configured above the color filters 124a, 124b, and 124c. In this case, the transparent electrode (not shown) is indirectly in contact with the drain electrode 114.

In addition, the transparent electrode (not shown) is connected in parallel with the storage capacitor C configured on the gate wiring 102.

In addition, the storage capacitor C has a portion of the gate wiring 102 as the first electrode, and is connected to the transparent electrode (not shown) and is formed on the same layer as the source and drain electrodes. ) As the second electrode.

In addition, the COT structure, the black matrix on the thin film transistor (T) of the array portion.

120 and red, green, and blue color filters 124a, 124b, and 124c. In this case, the black matrix 120 serves to cover the light leakage region.

In addition, the black matrix 120 is formed by applying an opaque organic material, and serves as a protective film for protecting the thin film transistor with the role of blocking light.

A method of manufacturing a liquid crystal display device having a COT structure according to the related art having the above configuration will be described below with reference to FIGS. 4A to 4E.

4A to 4E are cross-sectional views of the liquid crystal display of the COT structure taken along the line IV-IV of FIG. 3.

Referring to FIG. 4A, first, a conductive metal is deposited on the substrate 100 and patterned to form a gate wiring 102 and a gate electrode 104.

Next, one selected from the group of inorganic insulating materials including silicon nitride (SiNx) and silicon oxide (SiO ₂ ) is deposited on the entire surface of the substrate 100 on which the gate wiring 102 and the gate electrode 104 are formed. A gate insulating film 106 that is one insulating film is formed.

Subsequently, pure silicon (a-Si: H) and amorphous silicon (n + a-Si: H) containing impurities are deposited on the gate insulating layer 106, and patterned to form the gate electrode.

An active layer 108 and an ohmic contact layer 110 are formed on the gate insulating layer 106 on the upper side of the gate insulating layer 106.

Next, chromium (Cr), molybdenum (Mo), copper (Cu), tungsten (W), tantalum (Ta), etc., are formed on the entire surface of the substrate 100 on which the active layer 108 and the ohmic contact layer 110 are formed. Selected one of the conductive metal group including a depositing and patterning it, the source electrode 112 and the drain electrode 114 in contact with the ohmic contact layer 110, the data wiring in contact with the source electrode 112 ( An island-shaped capacitor upper electrode 118 that is a storage node is formed on the top of the gate 116 and the gate wiring 102.

Subsequently, one of the inorganic insulating material groups including silicon nitride and silicon oxide is deposited on the entire surface of the substrate 100 on which the source and drain electrodes 112 and 114 are formed to form the second insulating layer 119. In this case, the function of the second insulating layer 119 serves to prevent a poor contact that may occur between the organic layer (not shown) and the active layer 108 formed later. The second insulating layer 119 may not be formed unless a poor contact between the organic layer and the active layer 108 occurs.

Next, an opaque organic material is coated on the second insulating layer 119 to form an organic layer, and then patterned to form a black matrix on the thin film transistor T, the data wiring 116, and the gate wiring 102. 120).

In this case, a low transparent organic insulating material or an inorganic insulating material having a dielectric constant may be used as a protective layer for protecting the thin film transistor T, and in this case, a separate black matrix is used for the upper substrate.

Subsequently, referring to FIG. 4B, the black matrix 120 is selectively patterned so that the regions of the thin film transistor T and the storage capacitor C overlap with each other. In this case, the black matrix 120 is formed so that the black matrix does not remain in the portion of the second insulating layer 119 corresponding to the contact hole region to be formed in a subsequent process and the upper electrode of the capacitor to contact the drain electrode during patterning of the black matrix 120. Pattern.

Next, color resins are applied to the upper surface of the entire structure including the selectively patterned black matrix 120, and red, green, and blue color filters 124a, 124b, and 124c are respectively applied to the plurality of pixel areas P. FIG. Form.

Next, referring to FIG. 4C, an overcoat layer 126 is formed by coating an acrylic resin on the upper surface of the entire structure including the color filters 124a, 124b, and 124c.

Next, referring to FIG. 4D, the overcoat layer 126 may be selectively patterned to expose a portion of the drain electrode 114 and the capacitor upper electrode 118 and the drain contact hole 128 and the capacitor contact hole 130. To form.

 Subsequently, referring to FIG. 4E, a transparent electrode material is deposited on the overcoat layer 126 including the drain contact hole 128 and the capacitor contact hole 130 and then patterned to form a common electrode 132.

However, according to the array substrate and the manufacturing method of the liquid crystal display device according to the prior art manufactured as described above, the COT structure for preventing the opening ratio decrease due to the increase of the bonding margin in the large glass substrate process, the overcoat layer ( That is, acrylic resin) is used, and this acrylic film serves to planarize the unevenness generated on the lower substrate due to the organic film and to prevent the impurity ions of the color filter from eluting into the liquid crystal layer.

However, when the acrylic material is used, an increase in cost occurs and the transmittance is temporarily improved through a post exposure process. However, a decrease in transmittance in the subsequent process causes a problem of lowering the panel transmittance. have. Therefore, in order to eliminate the disadvantages of the COT structure, the development of the COT structure without using acrylic is in progress.

Accordingly, an object of the present invention is to provide a liquid crystal display device and a method of manufacturing the same, which are designed to solve various problems according to the prior art, which can prevent light leakage due to disclination in a COT structure. have.

In addition, another object of the present invention is to provide a liquid crystal display device and a method for manufacturing the same, which can lower the manufacturing cost and stabilize the transmittance by suppressing a decrease in transmittance.

According to an aspect of the present invention, there is provided a liquid crystal display device including: a gate line and a data line crossing a substrate to define a pixel area; A data wiring shielding common electrode arranged at both sides of the data wiring; A thin film transistor formed at an intersection point of the gate line and the data line; A black matrix disposed on a substrate including the data line and the gate line and overlapping the data line and the data line shielding common electrode; A color filter disposed on the pixel area where the gate line and the data line cross each other; A pixel electrode connected to the thin film transistor; And a common electrode arranged on the black matrix.

In addition, a method of manufacturing a liquid crystal display device according to the present invention for achieving the above object comprises the steps of forming a gate wiring and a data wiring to cross each other on an array substrate; Forming a data wiring shielding common electrode on both sides of the data wiring to be spaced apart from the data wiring; Forming a thin film transistor in an area where the gate line and the data line cross each other; Forming a black matrix on the substrate including the data line and the gate line and overlapping the data line and the data line shielding common electrode; Forming a color filter on the pixel area where the gate line and the data line cross each other; And forming a common electrode overlapping the pixel electrode connected to the thin film transistor on the black matrix.

Hereinafter, a liquid crystal display and a manufacturing method thereof according to the present invention will be described in detail with reference to the accompanying drawings.

5A to 5D are layout layout flowcharts of a liquid crystal display (LCD) device having a COT structure according to the present invention.

Referring to FIG. 5A, in the liquid crystal display of the COT structure according to the present invention, a gate wiring 202 is arranged in a horizontal direction on a lower array substrate, and is spaced apart from the gate wiring 202 by a predetermined interval in a horizontal direction. The common electrode line 206 is arranged. Here, the common electrode wiring 206 is arranged in a vertical direction, and a data line shielding common electrode 206a for minimizing cross-talk level, and is arranged in a horizontal direction to store the common electrode wiring 206. It consists of the storage part 206b which comprises a capacitor. Here, at least two of the data wiring shielding common electrodes 206a are arranged to face each other at a predetermined interval. In addition, the gate wiring 202 and the common electrode wiring 206 are simultaneously patterned at the time of gate patterning.

Subsequently, referring to FIG. 5B, the data line 214 and the source / drain electrodes 216 and 218 arranged on the lower array substrate (not shown) 200 in the vertical direction to intersect the gate line 202 may be formed. Arrange. In this case, the data line 214 is arranged to be spaced apart between the data line shielding common electrodes 206a of the common electrode line 206. In addition, the drain electrode 218 is disposed to overlap on the storage capacitor unit 206b of the common electrode wiring 206. In this case, the drain electrode 218 and the storage capacitor part 206b of the common electrode wiring 206 constitute a capacitor.

Next, although not shown in the drawing, a black matrix (not shown) is formed so as to deposit an insulating film (not shown) 220 on the entire substrate and to overlap the data wiring 214 and the data wiring shielding common electrode 206a thereon. ). In this case, the black matrix 222 is arranged to overlap the entire data line 214 and a predetermined portion of the data line shielding common electrode 206a. The black matrix 222 is arranged so as not to overlap on the planarization organic film 228 in which the drain contact hole 229 exposing the drain electrode 218 is formed in a subsequent process.

Subsequently, although not shown in the drawings, a color filter layer (not shown) 224 is formed on the second insulating layer 220 including a part of the upper surface of the black matrix (not shown). In this case, the color filter layer 224 is formed on a region where the gate wiring 202 and the data wiring 214 intersect with each other, and overlap with a portion of the top surface of the black matrix 222. Arrange.

Next, referring to FIG. 5C, a planarization organic film (not shown) 228 is formed on the entire substrate including the black matrix (not shown) 222 and the color filter layer (not shown) 224, and then the planarization organic film (not shown) is formed. 228 and the second insulating layer 220 are sequentially patterned to form a drain contact hole 229 exposing the drain electrode 218. In this case, when the drain contact hole 229 is formed, a thick black matrix (not shown) 222 or a color filter layer (not shown) 224 is not disposed on the planarization organic layer (not shown) 228. (229) Formation is possible.

Subsequently, referring to FIG. 5D, the drain electrode through the drain contact hole 229.

The pixel electrode 230 and the common electrode 232 connected to the 218 are arranged. In this case, the pixel electrode 230 overlaps the drain electrode 218 and extends in the vertical direction 230a. In addition, the common electrode 232 overlaps the gate wiring area, the data wiring area, and the data wiring shielding common electrode 206a, and the vertical direction 232a extending from the common electrode 232 is formed of the pixel electrode. It is arrange | positioned between the vertical directions 230a. At this time, the common electrode 232 is in contact with the common electrode wiring formed in the gate patterning and the display outer region formed in the previously formed gate is in an equipotential state.

Meanwhile, a method of manufacturing the liquid crystal display device according to the present invention having the above configuration will be described with reference to FIGS. 6A to 6F.

6A through 6F are cross-sectional views of the liquid crystal display device taken along line VIa-VIa and IVb-IVb of FIG. 5D.

Referring to FIG. 6A, first, a conductive metal is deposited on the substrate 200 and patterned to form a gate wiring 202 and a gate electrode 204. At this time, the capacitor electrode wiring 206 having the data wiring shielding common electrodes 206a and 206b positioned at both sides of the data line (not shown) 214 to be formed in a subsequent process simultaneously with the formation of the gate wiring (202). ) Is spaced apart from the gate wiring 202 so as to correspond in the horizontal direction. In this case, the data wiring shielding common electrode 206a serves to shield the data signal from affecting an electric field of an opening region (ie, between the common electrode and the pixel electrode) on the organic layer, that is, vertical cross-talk. This function lowers the level of cross-talk.

Then, silicon nitride (SiNx) and silicon oxide are formed on the entire surface of the substrate 200 on which the data wiring shielding common electrode 206a, the gate wiring (not shown) 202, and the gate electrode 204 are formed.

One selected from the group of inorganic insulating materials including (SiO ₂ ) is deposited to form a gate insulating film 208 which is a first insulating film.

Subsequently, as shown in FIG. 6B, pure silicon (a-Si: H) and amorphous silicon (n + a-Si: H) containing impurities are deposited on the gate insulating layer 208, and patterned. An active layer 210 and an ohmic contact layer 212 are formed on the gate insulating layer 208 on the gate electrode 204.

Next, chromium (Cr), molybdenum (Mo), copper (Cu), tungsten (W), tantalum (Ta), etc., are formed on the entire surface of the substrate on which the active layer 210 and the ohmic contact layer 212 are formed. Selected one of the conductive metal groups is deposited, patterned, and extended together with the data line 214 to extend from the data line 214 to contact the ohmic contact layer 212 and the drain electrode 218, respectively. ). In this case, a capacitor upper electrode (not shown) is formed together on the gate wiring 204 in contact with the source electrode 216 when the data wiring 214 is patterned. In addition, the data line 214 is formed to be spaced apart from the data line shielding common electrode 206a by a distance W1 and W2, respectively.

Subsequently, one of an inorganic insulating material group including silicon nitride and silicon oxide is deposited on the entire surface of the substrate 200 on which the source and drain electrodes 216 and 218 are formed to form a second insulating film 220. In this case, the function of the second insulating layer 220 serves to prevent a poor contact that may occur between the planarization organic layer (not shown) and the active layer 210 formed later. In addition, the second insulating layer 220 may not be formed unless a poor contact between the organic layer and the active layer 210 occurs.

Next, as illustrated in FIG. 6C, an opaque organic material is coated on the second insulating layer 220 to form a black matrix 222.

Subsequently, as illustrated in FIG. 6D, the black matrix 222 is selectively patterned to overlap the entire data line 214 and a portion of the data line shielding common electrode 206a. In this case, a low transparent organic insulating material or an inorganic insulating material having a dielectric constant may be used as a protective film for protecting the thin film transistor T, and in this case, a separate black matrix is used for the upper substrate. In addition, when the black matrix 222 is patterned, an edge portion of the black matrix 222 is positioned to overlap a portion of the upper portion of the data wiring shielding common electrode 206a. In addition, the black matrix is patterned so that the black matrix does not remain in the portion of the second insulating layer 220 corresponding to the contact hole region to be formed in a subsequent process to contact the drain electrode during the black matrix patterning.

Next, as shown in FIG. 6E, color resins are applied to the upper surface of the entire structure including the selectively patterned black matrix 222 to form red, green, and blue color filters 224 in the plurality of pixel areas. . At this time, in an area where the upper portion of the black matrix 222 and the color filter 224 overlap with each other without the acrylic planarization film, an unevenness 226 is formed, and the rubbing direction is distorted at the inclined portion of the unevenness 226 so that the disclination occurs.

(disclination) is caused, and the gap W1 and W2 between the data wiring 214 and the data wiring shielding common electrode 206a is black matrix to prevent this.

The light of the backlight is blocked in the declining area D because the overlap is overlapped by 222. In addition, in order to minimize the level of unleveling due to the acrylic overcoat layer member, the height of the black matrix 222 and the height of the color filter 224 are the same, or as shown in FIG. 6E, the black matrix 222 and the color filter ( The height difference H2 between 224 is formed to be smaller than " color filter 224 thickness H1 × 0.2 ".

Subsequently, one of inorganic insulating material groups including silicon nitride (SiNx) and silicon oxide is deposited on the upper surface of the entire structure including the color filter 224, instead of an overcoat layer using an acrylic resin that has been used previously. 228).

Next, as shown in FIG. 6F, the insulating layer 228 is selectively removed to form a drain contact hole (not shown) exposing the drain electrode 218.

Subsequently, a transparent electrode material (eg, ITO) is deposited on the insulating layer 228 including the drain contact hole.

Next, the transparent electrode layer is selectively patterned to form a common electrode 232 together with the pixel electrode 230 connected to the drain electrode 218.

Subsequently, although not shown in the figure, a planarization film (not shown) is formed on the entire surface of the substrate, and then an alignment film (not shown) is formed thereon.

As described above, according to the liquid crystal display and the manufacturing method thereof according to the present invention, the level difference between the color filter and the black matrix can be minimized to minimize the level of unleveling due to the acrylic overcoat layer member.

In addition, the unit cost can be lowered by not using an acrylic resin which is expensive and the transmittance continuously decreases by an additional process, and the drop in transmittance can be suppressed.

According to the present invention, the black matrix pattern edge portion is overlapped to the data wiring shielding common electrode after the black matrix patterning at the time of designing the black matrix, so that the light leakage region due to the disclination can be blocked.

On the other hand, while the above has been described with reference to the preferred embodiment of the present invention, those skilled in the art will be able to vary the present invention without departing from the spirit and scope of the invention described in the claims below It will be appreciated that modifications and variations can be made.

Claims (17)

A gate wiring and a data wiring crossing each other on the substrate to define pixel regions; A data wiring shielding common electrode arranged at both sides of the data wiring; A thin film transistor formed at an intersection point of the gate line and the data line; A black matrix disposed on a substrate including the data line and the gate line and overlapping the data line and the data line shielding common electrode; A color filter disposed on the pixel area where the gate line and the data line cross each other; A pixel electrode connected to the thin film transistor; And And a common electrode arranged on the black matrix. The liquid crystal display of claim 1, wherein the black matrix overlaps a portion between the data line and the data line shielding common electrode. 3. The liquid crystal display device according to claim 2, wherein the black matrix is overlapped over a part of the data wiring shielding common electrode including the data wiring. 2. The liquid crystal display device according to claim 1, wherein a capacitor electrode wiring is formed in a horizontal direction to be spaced apart from the gate wiring. The liquid crystal display of claim 4, wherein the data wiring shielding common electrode extends from a common electrode wiring spaced apart from the gate wiring. The liquid crystal display device according to claim 1, wherein an insulating film is formed between the color filter, the pixel electrode, and the common electrode. The liquid crystal display device according to claim 1, wherein one of the inorganic insulating materials including silicon nitride and silicon oxide is selected and used as the insulating film. The liquid crystal display device according to claim 1, wherein the data line and the data line shielding common electrode are arranged in a zigzag form. The liquid crystal display device according to claim 1, wherein the black matrix and the color filter have the same height, or the "difference in height between the black matrix and the color filter" is smaller than "thickness x 0.2" of the color filter. Forming a gate line and a data line to cross each other on the array substrate; Forming a data wiring shielding common electrode on both sides of the data wiring to be spaced apart from the data wiring; Forming a thin film transistor in an area where the gate line and the data line cross each other; Forming a black matrix on the substrate including the data line and the gate line and overlapping the data line and the data line shielding common electrode; Forming a color filter on the pixel area where the gate line and the data line cross each other; And And forming a common electrode overlapping the pixel electrode connected to the thin film transistor on the black matrix. The method of claim 10, wherein the black matrix overlaps the data wiring blocking electrode together with the entire data wiring. The method of claim 11, wherein the black matrix overlaps a portion between the data line and the data line shielding common electrode. The method of claim 10, wherein the data line shielding common electrode is formed by forming a common electrode line in a horizontal direction spaced apart from the gate line. The method of claim 10, further comprising forming an insulating layer between the color filter, the pixel electrode, and the common electrode. The method of claim 10, wherein one of the inorganic insulating materials including silicon nitride and silicon oxide is selected and used as the insulating film. The method of claim 10, wherein the data line and the data line blocking electrode are arranged in a zigzag form. The liquid crystal display device according to claim 10, wherein the black matrix and the color filter have the same height, or the height difference between the black matrix and the color filter is smaller than the color filter thickness x 0.2. Way.

Images