CN101369077B - LCD array substrates and manufacturing method thereof - Google Patents
LCD array substrates and manufacturing method thereof Download PDFInfo
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- CN101369077B CN101369077B CN2007101204294A CN200710120429A CN101369077B CN 101369077 B CN101369077 B CN 101369077B CN 2007101204294 A CN2007101204294 A CN 2007101204294A CN 200710120429 A CN200710120429 A CN 200710120429A CN 101369077 B CN101369077 B CN 101369077B
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Abstract
The invention relates to an array baseplate for an LCD and a preparing method thereof. The array baseplate: the bottom of a conductive shielding layer is arranged under a gate electrode insulation layer which is positioned under the signal line thereof, the shielding layer is connected with a sharing electrode lead, the upper part of the shielding layer is arranged on a passivation layer which is above the signal line, and the upper part of the shielding layer is connected with the lower part of the shielding layer via a through hole. The preparing method of the array baseplate prepares various components through respectively adopting the ways of magnetron sputtering, exposure, chemical corrosion and chemical vapor deposition, and the preparing order is: the gate electrode scan line, the gate electrode, the shared electrode lead and the bottom of the shielding layer; the gate electrode insulation layer and the active layer; the signal line, the drain electrode and the source electrode; the passivation layer; the through hole; and the pixel electrode and the upper part of the shielding layer. The LCD array baseplate can effectively eliminate influence of the pixel electrode and the capacitor which is arranged between the signal lines to the voltage of the pixel electrode, and can improve display quality, the preparing method is simple and can be achieved easily, and needs no additional manufacturing cost.
Description
Technical field
The present invention relates to a kind of LCD (Liquid Crystal Display) array substrate and manufacture method thereof, relate in particular to the structure of a kind of TFT thin film transistor LCD (Thin Film Transistor-Liquid Crystal Display is hereinafter to be referred as TFT LCD) array base palte and make the method for this array base palte.
Background technology
TFT LCD is characteristics such as little, low in energy consumption and radiationless because of its volume, have occupied leading position in current flat panel display market.The basic structure of TFT LCD device is that array glass substrate and color film glass substrate form box.
The vertical view of the single pixel of TFT LCD device on array base palte is the method for designing that TFT LCD device generally adopts in the prior art as shown in Figure 1.Fig. 2 and Fig. 3 be respectively A-A among Fig. 1 to B-B to sectional view, Fig. 2 has shown the structure of signal wire part, Fig. 3 has shown the structure of TFT device portions.The array base palte of prior art mainly comprises: substrate, the many fence electrodes sweep trace that on substrate, forms, the many signal line vertical with the gate electrode sweep trace, adjacent gate electrode sweep trace and signal wire intersection have defined pixel region, are illustrated in figure 1 as the vertical view of a pixel region.Pixel region includes gate electrode sweep trace 2, TFT switching device, transparent pixel electrode 7, i.e. indium tin metal oxide (Indium Tin Oxides is to call ITO in the following text) electrode, signal wire 6 and public (common) contact conductor 8.The TFT switching device mainly by gate electrode 13, active layer 14, cover the ohmic contact layer 18 on the active layer 14, source electrode 16 and the drain electrode 15 on the ohmic contact layer 18 formed.On array base palte, also comprise grid electrode insulating layer 3, cover on the gate electrode 13.Signal wire 6 is formed on the active layer 14, also is coated with passivation layer 5 on signal wire 6, source electrode 16 and drain electrode 15, and passivation layer 5 is provided with passivation layer via hole 17 above drain electrode 15, and transparent pixel electrode 7 is connected with drain electrode 15 by passivation layer via hole 17.
The equivalent electrical circuit of above-mentioned TFT LCD array base palte as shown in Figure 4, capacitor C
PdBe the electric capacity between transparent pixels electrode 7 and the signal wire 6, C
LcBe the electric capacity of the liquid crystal layer that clips of transparent pixels electrode 7 and public electrode, C
StIt is the memory capacitance of pixel.After 7 chargings of transparent pixels electrode finish,, can obtain following formula according to principle of charge conservation:
(C
LC+C
St)(U
P-U
common)+C
pd(U
p-U
d)＝(C
LC+C
St)(U′
P-U
common)+C
pd(U′
P-U′
d)
Can get through fortran:
Wherein: U
pBe pixel voltage, U
dBe signal voltage, U '
dBe the signal voltage of the next line pixel passed through in the signal wire, U '
pFor being subjected to C
PdAfter the influence, the changing value of pixel voltage, U
CommonBe the constant public electrode voltages that keeps.
Analyze after deliberation and obtain above-mentioned formula, the inventor therefrom finds: C
PdBig more, then pixel voltage is subjected to its variation that influences big more.In actual production process, the inventor finds equally: C
PdDisplay effect is had material impact, and its impact effect is greater than its calculated value.
Find that in conjunction with above-mentioned analysis the defective that exists in the prior art is: voltage can constantly change in the signal wire, passes through C
Pd, its change in voltage can have influence on the voltage of pixel electrode, especially when skew takes place in the signal wire position, can increase the C of pixel electrode one side
PdThereby, badly influencing pixel voltage, the problem of bad display appears.
Summary of the invention
The purpose of this invention is to provide a kind of LCD (Liquid Crystal Display) array substrate, eliminate the influence of pixel electrode and signal line capacitance, improve the display quality of display the voltage of pixel electrode.
Another object of the present invention provides a kind of manufacture method of LCD (Liquid Crystal Display) array substrate, to the influence of the voltage of pixel electrode, improves the display quality of display in order to pixel electrode and signal line capacitance in the elimination array base palte.
For achieving the above object, on the one hand, provide a kind of LCD (Liquid Crystal Display) array substrate, having comprised:
Substrate;
Be formed on gate electrode sweep trace, gate electrode and public electrode lead-in wire on the substrate;
Cover the grid electrode insulating layer on gate electrode sweep trace, gate electrode and the public electrode lead-in wire;
Be formed on the active layer on the grid electrode insulating layer, and the ohmic contact layer on the active layer;
Be formed on drain electrode, source electrode and signal wire on the ohmic contact layer;
Cover the passivation layer on active layer, drain electrode, source electrode and the signal wire;
Be formed on the pixel electrode on the passivation layer,
Wherein:
Also be provided with the screen layer bottom of conduction under the grid electrode insulating layer below the signal wire, this screen layer bottom links to each other with the public electrode lead-in wire, and described screen layer bottom adopts same material to form simultaneously with the gate electrode sweep trace;
On the passivation layer above the signal wire, also be provided with the screen layer top of conduction, and described screen layer top and pixel electrode adopt same material to form simultaneously;
Be provided with via hole on the passivation layer of signal wire both sides and grid electrode insulating layer, this screen layer top links to each other with the screen layer bottom by via hole.
For achieving the above object, on the other hand, also provide a kind of manufacture method of LCD (Liquid Crystal Display) array substrate, comprised the steps:
Step 1, on array base palte depositing metal films, adopt mask to form gate electrode sweep trace, gate electrode, public electrode lead-in wire and screen layer bottom by exposure technology and chemical etching technology;
Step 4, on the array base palte of completing steps 3 deposit passivation layer, adopt mask by exposure technology and chemical etching technology, on the screen layer bottom, form via hole on the passivation layer of data scanning line both sides and the grid electrode insulating layer;
By above technical scheme as can be known, the present invention adopts conductive material to form screen layer, signal wire is wrapped up, and go between to screen layer feeding common electric voltage by public electrode, utilize screen layer, eliminated the influence of pixel electrode and signal line capacitance pixel electrode voltage.Simultaneously, screen layer also has been equivalent to increase the area of public electrode lead-in wire, so increased memory capacitance.
Therefore, the present invention has the following advantages:
1, eliminated of the influence of the interior change in voltage of signal wire to pixel electrode voltage;
2, increased memory capacitance;
3, improved the display quality of display;
4, in the manufacture method, the operation of preparation screen layer has made full use of the manufacturing process of the existing device of preparation, is simple and easy to realize, need not to increase processing cost.
Also in conjunction with the accompanying drawings the present invention is described in further detail below by specific embodiment.
Description of drawings
Figure 1 shows that the single pixel plan structure synoptic diagram of prior art TFT LCD array base palte.
The A-A that Figure 2 shows that Fig. 1 is to schematic cross-section.
The B-B that Figure 3 shows that Fig. 1 is to schematic cross-section.
Figure 4 shows that the equivalent circuit diagram of Fig. 1 array base palte.
Fig. 5 A is depicted as the plan structure synoptic diagram of LCD (Liquid Crystal Display) array substrate specific embodiment of the present invention.
The C-C that Fig. 5 B is depicted as Fig. 5 to schematic cross-section.
Figure 6 shows that the equivalent circuit diagram of LCD (Liquid Crystal Display) array substrate specific embodiment of the present invention.
Figure 7 shows that the process flow diagram of LCD (Liquid Crystal Display) array substrate manufacture method specific embodiment of the present invention.
Figure 8 shows that the structural representation one of the array base palte that LCD (Liquid Crystal Display) array substrate manufacture method specific embodiment of the present invention is made.
The C-C that Figure 9 shows that Fig. 8 is to schematic cross-section.
Figure 10 shows that the structural representation two of the array base palte that LCD (Liquid Crystal Display) array substrate manufacture method specific embodiment of the present invention is made.
The C-C that Figure 11 shows that Figure 10 is to schematic cross-section.
Figure 12 shows that the structural representation three of the array base palte that LCD (Liquid Crystal Display) array substrate manufacture method specific embodiment of the present invention is made.
The C-C that Figure 13 shows that Figure 12 is to schematic cross-section.
Figure 14 shows that the structural representation four of the array base palte that LCD (Liquid Crystal Display) array substrate manufacture method specific embodiment of the present invention is made.
The C-C that Figure 15 shows that Figure 14 is to schematic cross-section.
Figure 16 shows that the synoptic diagram of via shape in the LCD (Liquid Crystal Display) array substrate specific embodiment of the present invention.
Gate electrode sweep trace 2 grid electrode insulating layers 3 passivation layer 5
91 screen layer tops, screen layer bottom, 92 via holes 12
Embodiment
Fig. 5 A is depicted as the plan structure figure of LCD (Liquid Crystal Display) array substrate specific embodiment of the present invention, and Fig. 5 B is depicted as the schematic cross-section of the C-C of Fig. 5 A to the signal wire part, and this embodiment is the array base palte of TFT thin film transistor LCD, comprising: substrate; Be formed on gate electrode sweep trace 2, gate electrode 13 and public electrode lead-in wire 8 on the substrate; Cover the grid electrode insulating layer 3 on gate electrode sweep trace 2, gate electrode 13 and the public electrode lead-in wire 8; Be formed on the active layer 14 on the grid electrode insulating layer 3, the ohmic contact layer 18 on the active layer 14, and be formed on drain electrode 15, source electrode 16 and signal wire 6 on the ohmic contact layer 18; Cover the passivation layer 5 on active layer 14, drain electrode 15, source electrode 16 and the signal wire 6; Be formed on the pixel electrode 7 on the passivation layer 5, wherein: the grid electrode insulating layer below signal wire 6 also is provided with the screen layer bottom 91 of conduction for 3 times, and this screen layer bottom 91 links to each other with public electrode lead-in wire 8; On the passivation layer above the signal wire 65, also be provided with the screen layer top 92 of conduction; Be provided with two strip via holes 12 on the passivation layer 5 of signal wire 6 both sides and grid electrode insulating layer 3, this screen layer top 92 links to each other with screen layer bottom 91 by via hole 12.
In technique scheme, the material that adopt on screen layer bottom 91 and screen layer top 92 is that conductive metallic material is to realize the effect of shielding, can be wholely set, in manufacture process, consider from easily manufactured angle, also can be divided into bottom and top two parts, screen layer bottom 91 and gate electrode sweep trace 2 use same material, preferable mode is to select molybdenum for use, aluminium, alumel, molybdenum and tungsten alloy, chromium, or metal such as copper, also can use the combination of above-mentioned several metal materials, perhaps use the alloy of above-mentioned different materials, promptly can adopt one of them or its arbitrary combination of above-mentioned material; Screen layer top 92 and pixel electrode 7 use same material, and preferable mode is to select indium tin metal oxide for use.Via hole 12 is arranged on the both sides of signal wire 6, and the shape of strip via hole 12 is can be for rectangle rectangular or curve is rectangular.Via hole 12 also can be other shapes, the less at interval circular hole of two rows for example is set respectively in the both sides of signal wire 6, two row's small sircle hole interleaved, as shown in figure 16, the shape of via hole and the setting of number, as long as can connect screen layer top 92 and screen layer bottom 91, and can effectively produce shielding action and get final product.
Figure 6 shows that the equivalent circuit diagram of present embodiment, when the display array substrate work of present embodiment, the electric capacity of 6 of pixel electrode 7 and signal wires can be eliminated in screen layer bottom 91 and screen layer top 92, then the voltage of pixel electrode 7 can no longer be subjected to its influence, can effectively improve the display quality of display, and because be equivalent to increase the area of public electrode lead-in wire 8, so can increase the storage capacitance value of 6 of public electrode lead-in wire 8 and signal wires, also help to improve display quality.
Figure 7 shows that the process flow diagram of LCD (Liquid Crystal Display) array substrate manufacture method specific embodiment of the present invention, present embodiment is applied to make the array base palte of TFT thin film transistor LCD, present embodiment also is an a kind of preferable manufacture method of making LCD (Liquid Crystal Display) array substrate the foregoing description of the present invention, comprises the steps:
Step 1, on array base palte depositing metal films, adopt mask to form gate electrode sweep trace, gate electrode, public electrode lead-in wire and screen layer bottom by exposure technology and chemical etching technology;
Step 4, on the array base palte of completing steps 3 deposit passivation layer, adopt mask by exposure technology and chemical etching technology, on the screen layer bottom, form via hole on the passivation layer of data scanning line both sides and the grid electrode insulating layer;
The concrete processing procedure of the foregoing description is:
At first, use magnetically controlled sputter method, preparation one deck grid metallic film on the glass array substrate, its thickness is preferably
Extremely
The grid metal material uses metals such as molybdenum, aluminium, alumel, molybdenum and tungsten alloy, chromium or copper usually, also can use the stack combinations of above-mentioned different materials film, perhaps can adopt the alloy material of above-mentioned different materials combination in any, pass through exposure technology or chemical etching technology with the gate electrode mask, on certain zone of glass array substrate, grid metallic film etching is formed certain pattern, as shown in Figure 8, the C-C that Figure 9 shows that Fig. 8 is to sectional view, and this pattern comprises gate electrode sweep trace 2, gate electrode 13, public electrode lead-in wire 8 and screen layer bottom 91;
Then, utilize method deposit grid electrode insulating layer film on the array base palte of the pattern of finishing gate electrode sweep trace 2, gate electrode 13, public electrode lead-in wire 8 and screen layer bottom 91 of chemical vapor deposition, the thickness of grid electrode insulating layer film is preferably
Arrive
As grid electrode insulating layer 3, the material of grid electrode insulating layer 3 is silicon nitride normally, also can use monox and silicon oxynitride etc., utilizes the method consecutive deposition amorphous silicon membrane of chemical vapor deposition again, and the thickness of amorphous silicon membrane is preferably
Arrive
Deposit one deck ohmic contact layer 18 afterwards again, adopt the active layer mask plate ohmic contact layer 18 and amorphous silicon membrane etching to be formed the silicon island by exposure technique and dry etch process, it is active layer, grid electrode insulating layer between grid metal and the amorphous silicon membrane has played the effect that stops etching at this moment, the position of silicon island as shown in figure 10, Figure 11 is that the C-C of Figure 10 is to sectional view;
Then, adopt and the similar preparation method of grid metallic film, be similar to grid metallized metal film with magnetically controlled sputter method deposition one deck on array base palte, the thickness of this metallic film is preferably
Arrive
Be data Layer (S/D layer), mask by source, drain electrode adopts exposure technique and chemical corrosion technology etching to form certain pattern on the grid metallic film again, this pattern comprises signal wire 6, source electrode 15 and drain electrode 16, re-using dry etch process does not etch away by source electrode 15 and drain electrode 16 coverings, but the ohmic contact layer that is exposing, as shown in figure 12, Figure 13 shows that the C-C of Figure 12 is to sectional view;
Subsequently, with and prepare the similar method of grid electrode insulating layer 3 and active layer 14, on whole array base palte, adopt chemical gaseous phase depositing process to deposit one deck passivation layer 5, its thickness is preferably
Arrive
Its material is silicon nitride normally, again by the passivation layer mask, utilize exposure technique etching on passivation layer 5 to form via hole, wherein at least one passivation layer via hole 17 correspondence is arranged on the top of drain electrode 15 parts, and on screen layer bottom 91, the both sides etching of respective signal line 6 forms the via hole 12 of two strips, this via hole 12 etches away passivation layer 5, and etch away grid electrode insulating layer under it, expose the screen layer bottom, the position of via hole 12 as shown in figure 14, the C-C that Figure 15 shows that Figure 14 is to sectional view;
At last, by identical processing step, adopt magnetically controlled sputter method deposit transparent conductive material, adopt the mask plate etching, form pixel electrode 7 and screen layer top 92 simultaneously, and pixel electrode 7 links to each other with S/D layer drain electrode at passivation layer via hole 17 places, transparent conductive material forms screen layer top 92 simultaneously, be communicated with screen layer bottom 91 by via hole 12, wherein, by changing the shape of mask plate, pixel electrode 7 that etching obtains and screen layer top 92 are two distinct area, insulated from each other, the transparent conductive material of pixel electrode commonly used is ITO, and its thickness preferably is arranged on
Extremely
Between, the position of pixel electrode 7 is shown in Fig. 5 A, and Fig. 5 B is depicted as the C-C of Fig. 5 A to sectional view.
In the manufacture method specific embodiment of above-mentioned LCD (Liquid Crystal Display) array substrate, the operation of preparation screen layer was divided for two steps, prepare screen layer bottom 91 earlier, prepare screen layer top 92 again, preparation section has made full use of the operation and the material of the existing device of preparation, and be simple and easy to realize, need not to increase processing cost.
The another kind of way of realization of above-mentioned steps 5 can also be pixel electrode 7 of Xing Chenging and screen layer top 92 respectively, and then step 5 comprises following two steps:
The transparent conductive material of pixel deposition electrode layer forms pixel electrode 7 by the mask plate etching;
Deposits conductive material forms screen layer top 92 by the mask plate etching.
The order of above-mentioned two steps can exchange, and the material that forms screen layer top 92 is that conductive material gets final product, needn't be consistent with the material of pixel electrode 7, and by optimized choice different metal material and work flow, with maximized saving processing and manufacturing cost.
It should be noted that at last: above embodiment only in order to technical scheme of the present invention to be described, is not intended to limit; Although with reference to previous embodiment the present invention is had been described in detail, those of ordinary skill in the art is to be understood that: it still can be made amendment to the technical scheme that aforementioned each embodiment put down in writing, and perhaps part technical characterictic wherein is equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution break away from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (8)
1. LCD (Liquid Crystal Display) array substrate comprises:
Substrate;
Be formed on gate electrode sweep trace, gate electrode and public electrode lead-in wire on the described substrate;
Cover the grid electrode insulating layer on described gate electrode sweep trace, gate electrode and the public electrode lead-in wire;
Be formed on the active layer on the described grid electrode insulating layer, and the ohmic contact layer on the active layer;
Be formed on drain electrode, source electrode and signal wire on the ohmic contact layer;
Cover the passivation layer on described active layer, drain electrode, source electrode and the signal wire;
Be formed on the pixel electrode on the described passivation layer,
It is characterized in that:
Also be provided with the screen layer bottom of conduction under the grid electrode insulating layer below the described signal wire, described screen layer bottom links to each other with the public electrode lead-in wire, and described screen layer bottom adopts same material to form simultaneously with the gate electrode sweep trace; On the described passivation layer above the described signal wire, also be provided with the screen layer top of conduction, and described screen layer top and pixel electrode adopt same material to form simultaneously; Be provided with via hole on the passivation layer of described signal wire both sides and grid electrode insulating layer, described screen layer top links to each other with described screen layer bottom by described via hole.
2. LCD (Liquid Crystal Display) array substrate according to claim 1 is characterized in that: described via hole is a strip.
3. LCD (Liquid Crystal Display) array substrate according to claim 1 is characterized in that: the thickness range of described screen layer bottom is
Arrive
4. LCD (Liquid Crystal Display) array substrate according to claim 1 is characterized in that: the thickness range on described screen layer top is
Arrive
5. the manufacture method of a LCD (Liquid Crystal Display) array substrate comprises the steps:
Step 1, on array base palte depositing metal films, adopt mask to form gate electrode sweep trace, gate electrode, public electrode lead-in wire and screen layer bottom by exposure technology and chemical etching technology;
Step 2, on the array base palte of completing steps 1 successive sedimentation insulation course and amorphous silicon membrane, then deposit ohmic contact layer, form active layer by exposure technology and dry etch process etching on ohmic contact layer and amorphous silicon membrane;
Step 3, on the array base palte of completing steps 2 depositing metal films, adopt mask to form signal wire, source electrode and drain electrode by exposure technology and chemical etching technology, re-use the ohmic contact layer that dry etch process etches away exposure;
Step 4, on the array base palte of completing steps 3 deposit passivation layer, adopt mask by exposure technology and chemical etching technology, on the described screen layer bottom, form via hole on the passivation layer of data scanning line both sides and the grid electrode insulating layer;
Step 5, on the array base palte of completing steps 4 the deposit transparent conductive material, form pixel electrode and screen layer top by the mask plate etching, described screen layer top is connected bottom screen layer by described via hole.
6. the manufacture method of LCD (Liquid Crystal Display) array substrate according to claim 5 is characterized in that, described step 5 specifically comprises: pixel deposition electrode layer transparent conductive material, adopt the mask plate etching to form pixel electrode; Deposits conductive material adopts the mask plate etching to form screen layer top, and described screen layer top is connected with the screen layer bottom by described via hole.
7. the manufacture method of LCD (Liquid Crystal Display) array substrate according to claim 5 is characterized in that: the material of the metal film of deposition is one of them or its arbitrary combination of molybdenum, aluminium, alumel, molybdenum and tungsten alloy, chromium and copper in the described step 1 and/or 3.
8. according to the manufacture method of claim 5 or 6 described LCD (Liquid Crystal Display) array substrates, it is characterized in that: the thickness of the transparent conductive material of deposition is in described step 5
Arrive
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| CN101957525B (en) * | 2009-07-13 | 2013-07-24 | 北京京东方光电科技有限公司 | TFT-LCD array substrate and making method thereof |
| CN102799033B (en) * | 2012-07-26 | 2015-09-23 | 京东方科技集团股份有限公司 | Display panel and preparation method thereof, display device |
| CN103681692A (en) * | 2013-11-29 | 2014-03-26 | 北京京东方光电科技有限公司 | Array substrate, production method thereof and display device |
| CN103715141B (en) | 2013-12-27 | 2015-02-18 | 京东方科技集团股份有限公司 | Array substrate and preparation method thereof |
| CN104701302A (en) * | 2015-03-18 | 2015-06-10 | 合肥京东方光电科技有限公司 | Array substrate and manufacture method thereof and display device |
| CN104730785B (en) * | 2015-04-17 | 2017-10-24 | 京东方科技集团股份有限公司 | Liquid crystal display panel and its manufacture method |
| CN108231850B (en) * | 2018-01-03 | 2022-08-19 | 京东方科技集团股份有限公司 | Array substrate, preparation method thereof and display panel |
| CN109212845B (en) | 2018-10-25 | 2021-09-17 | 合肥鑫晟光电科技有限公司 | Display substrate, display device and preparation method of display substrate |
| CN111090203B (en) * | 2020-03-22 | 2020-07-14 | 深圳市华星光电半导体显示技术有限公司 | Array substrate and display panel |
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Owner name: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY Effective date: 20141208 Owner name: JINGDONGFANG SCIENCE AND TECHNOLOGY GROUP CO., LTD Free format text: FORMER OWNER: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY CO., LTD. Effective date: 20141208 |
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Effective date of registration: 20141208 Address after: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Patentee after: BOE Technology Group Co., Ltd. Patentee after: Beijing BOE Photoelectricity Science & Technology Co., Ltd. Address before: 100176 Beijing economic and Technological Development Zone, West Central Road, No. 8 Patentee before: Beijing BOE Photoelectricity Science & Technology Co., Ltd. |