KR100929832B1 - 고속의 데이터 입출력을 위한 반도체 메모리 장치 - Google Patents

고속의 데이터 입출력을 위한 반도체 메모리 장치 Download PDF

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Publication number
KR100929832B1
KR100929832B1 KR1020080019065A KR20080019065A KR100929832B1 KR 100929832 B1 KR100929832 B1 KR 100929832B1 KR 1020080019065 A KR1020080019065 A KR 1020080019065A KR 20080019065 A KR20080019065 A KR 20080019065A KR 100929832 B1 KR100929832 B1 KR 100929832B1
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KR
South Korea
Prior art keywords
data
output
consecutive
serialization
outputting
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KR1020080019065A
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English (en)
Korean (ko)
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KR20090093510A (ko
Inventor
신범주
윤상식
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주식회사 하이닉스반도체
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Application filed by 주식회사 하이닉스반도체 filed Critical 주식회사 하이닉스반도체
Priority to KR1020080019065A priority Critical patent/KR100929832B1/ko
Priority to US12/217,019 priority patent/US8243543B2/en
Priority to TW097125815A priority patent/TWI399757B/zh
Priority to CN2008101682661A priority patent/CN101521040B/zh
Priority to JP2009040370A priority patent/JP2009211800A/ja
Publication of KR20090093510A publication Critical patent/KR20090093510A/ko
Application granted granted Critical
Publication of KR100929832B1 publication Critical patent/KR100929832B1/ko

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/106—Data output latches
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1063—Control signal output circuits, e.g. status or busy flags, feedback command signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G11C7/222—Clock generating, synchronizing or distributing circuits within memory device

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
KR1020080019065A 2008-02-29 2008-02-29 고속의 데이터 입출력을 위한 반도체 메모리 장치 KR100929832B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020080019065A KR100929832B1 (ko) 2008-02-29 2008-02-29 고속의 데이터 입출력을 위한 반도체 메모리 장치
US12/217,019 US8243543B2 (en) 2008-02-29 2008-06-30 Semiconductor memory device for high-speed data input/output
TW097125815A TWI399757B (zh) 2008-02-29 2008-07-09 半導體記憶體裝置及用於操作其之方法
CN2008101682661A CN101521040B (zh) 2008-02-29 2008-10-06 半导体存储器件和用于操作半导体存储器件的方法
JP2009040370A JP2009211800A (ja) 2008-02-29 2009-02-24 半導体メモリ装置、信号伝達装置、及び、半導体メモリ装置の動作方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020080019065A KR100929832B1 (ko) 2008-02-29 2008-02-29 고속의 데이터 입출력을 위한 반도체 메모리 장치

Publications (2)

Publication Number Publication Date
KR20090093510A KR20090093510A (ko) 2009-09-02
KR100929832B1 true KR100929832B1 (ko) 2009-12-07

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KR1020080019065A KR100929832B1 (ko) 2008-02-29 2008-02-29 고속의 데이터 입출력을 위한 반도체 메모리 장치

Country Status (2)

Country Link
KR (1) KR100929832B1 (zh)
CN (1) CN101521040B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101212760B1 (ko) * 2010-10-29 2012-12-14 에스케이하이닉스 주식회사 반도체 장치의 입출력 회로 및 방법 및 이를 포함하는 시스템
KR20180119071A (ko) * 2017-04-24 2018-11-01 에스케이하이닉스 주식회사 전자장치
US10490238B2 (en) * 2017-06-29 2019-11-26 SK Hynix Inc. Serializer and memory device including the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030064391A (ko) * 2000-08-31 2003-07-31 마이크론 테크놀로지, 인크 대규모 병렬 프로세서 어레이를 메모리 어레이에 비트직렬 방식으로 접속하는 방법 및 장치
KR20040058771A (ko) * 2002-12-27 2004-07-05 주식회사 하이닉스반도체 4비트 프리페치를 위한 파이프래치를 갖는 반도체 기억 장치
KR20060122517A (ko) * 2005-05-27 2006-11-30 삼성전자주식회사 리던던시 코드 체크 기능을 가지는 반도체 메모리 장치 및그것을 구비한 메모리 시스템

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100499157B1 (ko) * 2003-07-29 2005-07-01 삼성전자주식회사 고속 직렬화기
CN1333356C (zh) * 2004-07-23 2007-08-22 中国人民解放军国防科学技术大学 写串行化和资源复制相结合的多端口寄存器文件设计方法
US7471752B2 (en) * 2004-08-06 2008-12-30 Lattice Semiconductor Corporation Data transmission synchronization

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030064391A (ko) * 2000-08-31 2003-07-31 마이크론 테크놀로지, 인크 대규모 병렬 프로세서 어레이를 메모리 어레이에 비트직렬 방식으로 접속하는 방법 및 장치
KR20040058771A (ko) * 2002-12-27 2004-07-05 주식회사 하이닉스반도체 4비트 프리페치를 위한 파이프래치를 갖는 반도체 기억 장치
KR20060122517A (ko) * 2005-05-27 2006-11-30 삼성전자주식회사 리던던시 코드 체크 기능을 가지는 반도체 메모리 장치 및그것을 구비한 메모리 시스템

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Publication number Publication date
CN101521040A (zh) 2009-09-02
KR20090093510A (ko) 2009-09-02
CN101521040B (zh) 2012-12-05

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