KR100919562B1 - Etching apparatus - Google Patents

Abstract

The etching apparatus of the present invention rotates a transfer unit for vertically conveying an etching target substrate, a first etching tank for etching the etching target substrate conveyed by the transfer unit, and the etching target substrate passing through the first etching vessel. And a second etching bath for etching the transferred etching target substrate when the etching target substrate rotated by the rotating unit is transferred by the transfer unit, thereby simultaneously etching a plurality of etching target substrates. The liquid level phenomenon can be prevented by the rotation of the substrate to be etched.

Description

Etching apparatus

The present invention relates to an etching apparatus, and more particularly, to an etching apparatus for providing a quick and uniform etching by allowing the plurality of etching target substrates to be etched twice in a vertically standing state.

In general, a printed circuit board (PCB) serves to easily connect various electronic devices according to a certain frame, and is widely used in all electronic products such as digital TV and other home appliances to high-tech communication devices. According to the application, it is classified into general-purpose PCB, PCB for module, PCB for package, and the like.

Printed circuit boards are manufactured through numerous processes, among which interest in etching processes related to miniaturization of circuit patterns is increasing.

Such etching processes are classified into dry etching and wet etching processes.

The dual dry etching process is typically a plasma etching that proceeds by chemical reaction between the elements present in the plasma and the surface material to be etched and reaction reaction by surface collision with the activated particles present in the plasma. Dry etching is a dry etching method using a gas phase chemical reaction, and an etching by an ion beam which physically sputters and etches atoms on a sample surface using accelerated ions.

The dry etching process has a higher processing precision than wet etching, and thus has been widely used in the microfabrication field recently. However, the dry etching process has an economical problem due to the low etching rate and low processing capacity of the etching apparatus.

On the other hand, the wet etching process is a method of etching a material to be etched into a desired shape by using a chemical solution (etchant, etchant) that can chemically react with and dissolve the film to be etched.

This wet etching process is capable of working in large quantities compared to the dry etching process, and because the work speed is fast and economical, it is widely used in manufacturing fields such as printed circuit boards and glass gaps without requiring precision than the dry etching process. It is used.

On the other hand, as the types of printed circuit boards have been diversified in recent years, there is a growing demand for fast etching of various types of printed circuit boards. In particular, there is a growing interest in wet etching processes for rapid etching of printed circuit boards.

FIG. 1 schematically shows an etching apparatus 10 employed in a general wet etching process in which etching is performed while moving one substrate horizontally.

As shown in FIG. 2, the conventional etching apparatus 10 includes the etching nozzle 13, the nozzle pipe 12 on which the etching nozzle 13 is formed, and the substrate 11 to be etched. It is provided with a transfer unit (not shown) for transferring to.

At this time, the transfer unit is generally composed of a roller or a conveyor belt.

The etching apparatus 10 sprays the etching liquid onto the substrate 11 by the nozzle 13 while the substrate 11 to be etched by the transfer unit moves under the nozzle 13 which constantly sprays the etching liquid. Then, a chemical reaction occurs between the etchant and the substrate to perform wet etching.

However, in this etching process, as the substrate 11 to be etched is horizontally transferred to the ground, the etching liquid injected from the etching nozzle 13 stays on the substrate 11 for a predetermined time, thereby making it difficult to achieve uniform etching. Therefore, the etching degree of an etching surface is not fixed, and there exists a problem that a defective rate is high.

That is, when the substrate 11 to be etched in the horizontal state is etched, even if the point is at the same distance from the center of the substrate 11, the etching amount is different, which means that the diffusion speed of the etching solution on the substrate 11 Not only is it not uniform, but the rate of etching varies depending on the distribution of etched byproducts.

In addition, there is a problem that serves as an obstacle to prevent the etching liquid from diffusing in the etching target substrate placed horizontally by a roller or a conveyor belt as a transfer means.

In addition, by transferring one substrate 11 to be etched horizontally, the etching apparatus 10 not only occupies a wide space in the horizontal direction but also etches a large amount of the substrate 11 or another type of substrate 11. In this case, the time for the substrate 11 to pass through the etching apparatus is determined, and thus there is a problem that takes a lot of time.

The present invention has been made to solve the above problems, an object of the present invention is to provide an etching apparatus that reduces the liquid coagulation phenomenon than the etched substrate to be transferred in the horizontal direction by transporting the etched substrate in a vertical standing state. will be.

It is another object of the present invention to provide an etching apparatus which is capable of accommodating a plurality of etching target substrates and having an etching nozzle and a nozzle pipe therein to increase the space efficiency of the etching apparatus and to perform rapid etching. It is to provide.

Another object of the present invention is to provide a liquid level phenomenon in the lower portion of the substrate to be etched by the vertical transfer of the substrate to be equipped with two etching tanks and a rotation unit for rotating the etching target substrate 180 degrees between the etching tanks. It is to provide an etching apparatus with improved etching performance by preventing.

Another object of the present invention is to provide an etching apparatus that transfers the etching target substrate in a vertically upright position and does not prevent the diffusion of etching liquid from the etching target substrate, thereby achieving an excellent etching performance while achieving a transfer and support function of the etching target substrate. It is to provide an etching apparatus that can be provided.

Another object of the present invention is to configure the inside of the etching bath in multiple rows to simultaneously etch a plurality or different kinds of etching target substrates, and to adjust the injection amount, the spraying speed, and the spraying direction of the etching liquid according to the type of the etching target substrate. The present invention is to provide an etching apparatus that can be applied even in the case of small quantity batch production while performing rapid etching.

The etching apparatus according to the present invention includes a transfer unit for vertically conveying a substrate to be etched, a first etching tank for etching the etching target substrate conveyed by the transfer unit, and the etching target substrate passing through the first etching vessel. And a second etching bath for etching the transferred etching target substrate when the etching target substrate rotated by the rotation unit and the etching target substrate rotated by the transfer unit are rotated.

Here, the transfer unit is characterized by consisting of a plurality of rollers formed to correspond to both sides of the etched substrate in order to transfer the etched substrate in a vertically standing state.

The transfer unit may further include a fastening part having a groove formed therein for receiving a dummy area formed at a lower edge of the etched substrate so as to support the vertically etched substrate and a transfer part for transferring the fastening part. .

In addition, the transfer unit is a transfer unit for transporting the upper and lower fastening portion and the fastening portion formed with a groove for receiving the dummy area formed on the upper and lower edges of the etching target substrate in order to transfer the etched substrate in a vertical position Characterized in that consisting of.

The first etching bath and the second etching bath may be provided on both surfaces of the etching target substrate so as to be spaced apart from the etching target substrate, and the plurality of nozzle pipes may include a plurality of nozzles for spraying etching liquid onto a surface of the etching target substrate. It is characterized by including.

The nozzle pipes formed at edges of the first etching bath and the second etching bath among the plurality of nozzle pipes may include nozzles for injecting etching liquid to the inside through which the substrate to be etched passes. Except for the nozzle pipe is characterized in that it comprises a nozzle for spraying the etching solution on both sides.

In addition, the nozzle is characterized in that the injection amount, the injection speed and the injection direction of the etching liquid to be injected to the substrate to be etched according to the type of the substrate to be passed through the etching bath is adjustable.

In addition, the transfer unit is composed of a plurality of transfer units to transfer the plurality of etched substrates passing through the transfer chamber, the plurality of transfer units are characterized in that the feed rate is adjusted respectively.

The rotating unit may include a clamp arm clamping a dummy region formed at an edge of the etching target substrate passing through the first etching bath and a driving unit rotating the clamp arm 180 °.

As described above, the etching apparatus according to the present invention has a liquid level phenomenon more than in etching of the etching target substrate to be transferred in the horizontal direction by etching 180 times by rotating the etching target substrate to be transported in a vertically upright position and then rotating it 180 ° again. By preventing and etching the substrate to be erected in a vertical position, liquid coagulation, which may occur under the substrate to be etched, is prevented by rotating the substrate to be etched, thereby improving etching characteristics.

In addition, by arranging the inside of the etching bath in which the etching of the etching target substrate is performed in a plurality of rows and by placing a plurality of etching nozzles for spraying the etching liquid therein in a plurality of rows, the plurality of etching target substrates can be etched at a time, thereby improving the etching efficiency. Can improve.

In addition, since the etching amount, the spraying speed, and the spraying direction of the etching liquid to which the etching nozzle is sprayed are controlled to be adjusted, when different kinds of etching target substrates are transferred into the etching bath, the etching solution is sprayed to suit the respective etching target substrates. It can also be usefully used for the manufacture of circuit boards.

In addition, by providing a transfer unit capable of transferring the substrate to be etched by configuring only the upper and lower dummy regions of the substrate to be etched, the diffusion of the etching liquid is not prevented by the transfer unit, thereby improving etching performance.

1 is a view schematically showing the configuration of an etching apparatus according to the prior art;

2 is a view schematically showing the configuration of an etching apparatus according to the present invention;

3 is a view schematically showing the configuration of the etching spray means and the configuration of the transfer unit in the etching bath viewed from the direction in which the etching target substrate is transferred in accordance with an embodiment of the present invention;

4 is a view schematically showing the configuration of a transfer unit according to an embodiment of the present invention;

5 is a view schematically showing the configuration of a transfer unit according to another embodiment of the present invention; And

6 is a view schematically showing the configuration of a rotating unit according to another embodiment of the present invention.

<Description of the symbols for the main parts of the drawings>

100: etching apparatus 120: transfer unit

121: roller 123: fastening portion

125: transfer unit 130: first etching bath

131: nozzle pipe 133: etching nozzle

140: rotating unit 141: clamp arm

143: drive unit 150: second etching bath

Hereinafter, an etching apparatus according to a preferred embodiment of the present invention with reference to the accompanying drawings will be described in detail.

2 is a view schematically showing the configuration of an etching apparatus according to the present invention.

As shown in Figure 2, the etching apparatus 100 of the etching target substrate according to the preferred embodiment of the present invention is a transfer unit 120 for transferring the etching target substrate 110, the transferred etching target substrate 110 The first etching tank 130, the second etching tank 150, and the rotating unit 140 for rotating the etching target substrate 110 is configured to include.

The transfer unit 120 serves to transfer the substrate to be etched vertically from the first etching bath 130 to the second etching bath 150. The transfer unit 120 is composed of a means for supporting and transporting the side or the top / bottom of the etching target substrate 110, the detailed description and arrangement of these means will be described later.

The etching bath includes a first etching bath 130 and a second etching bath 150. When the etching target substrate 110 is transferred in a vertical position, the etching bath sprays the etching solution to perform etching and the etching target substrate 110. In order to achieve a uniform etching of), the etching target substrate 110 is disposed before and after rotation of the etching target substrate 110 to etch the etching target substrate 110 twice.

In such an etching bath, an etching nozzle 133 or a nozzle pipe 131 for spraying an etching solution to etch the etching target substrate 110 is provided, and the arrangement and function of the etching nozzle 133 and the nozzle pipe 131 are provided. Detailed description will be described later.

The rotating unit 140 is disposed between the first etching tank 130 and the second etching tank 150 to rotate the etching target substrate 11.

Such, as an example of the rotary unit 140 may include a clamp arm 141 for clamping the etching target substrate 110 and a drive unit 143 for rotating the etched substrate 110, the arrangement and action of the rotary unit 140 Detailed description will be described later.

3 is a view schematically showing the configuration of the etching injection means and the configuration of the transfer unit in the etching bath viewed from the direction in which the etching target substrate is transferred according to an embodiment of the present invention.

As shown in FIG. 3, the transfer unit 120 according to an exemplary embodiment of the present invention includes a plurality of rollers 121 formed to correspond to both side surfaces of the etching target substrate 110 standing vertically. The plurality of rollers 121 are driven by a roller driving means (not shown) to contact the dummy region of the substrate to be etched and to transfer the substrate to be etched by the contact friction thereof.

As described above, the plurality of rollers 121 are formed to be able to move in one direction or in both directions so that the etching liquid is evenly sprayed onto the etching target substrate 110.

The rollers 121 are spaced apart from each other by a distance corresponding to the thickness of the substrate to be etched so that the vertically etched substrate 110 may be inserted between the rollers 121.

Although not shown in the drawings, roller supporting means for rotatably supporting the roller 121 is formed in each of the etching baths, one side is connected to the inner wall of each etching bath, and the other side is connected to the roller 121.

The roller 121 and the roller supporting means are configured such that the distance between the rollers 121 is adjustable according to the type and thickness of the substrate to be etched.

In addition, the roller 121 is formed to have the same distance from the nozzle 133 formed on both sides of each roller 121 so that both sides of the substrate 110 have the same etching conditions.

Meanwhile, although FIG. 3 illustrates that the roller 121 formed integrally is formed on both sides of the etching target substrate 110, the roller 121 may be formed of a plurality of separate rollers 121 and may be formed on the etching target substrate 121. The position of the roller 121 may also be adjusted to correspond to the formed dummy area.

In addition, although the transfer unit 120 is shown in Figure 3 to convey the etching target substrate 110 in one direction, it is also within the scope of the present invention to configure the etching target substrate 110 to transfer in both directions May be included.

In particular, the transfer unit 140 in the first etching tank 130 and the second etching tank 150 to transfer the etching target substrate 110 in both directions so that the etching liquid is uniformly sprayed on the etching target substrate 110. ) Is configured.

4 is a view schematically showing the configuration of the transfer unit according to an embodiment of the present invention.

As shown in FIG. 4, the transfer unit 120 according to another preferred embodiment of the present invention includes a plurality of rollers 121 formed vertically to correspond to both sides of the etching target substrate 110. It includes a fastening portion 123 for receiving the dummy region formed on the lower edge of the etching target substrate 110 to support the etching substrate 110 and the transfer portion 125 for transferring the fastening portion 123.

At this time, the roller 121, as shown in Figure 3, the roller 121 is formed to correspond to both sides of the vertically etched substrate 110, and serves to support the etching target substrate 110 from both sides. The fastening part 123 and the transfer part 125 may be etched to prevent the etching target substrate 110 from being pulled out between the rollers 121 when the substrate is vertically conveyed. Support the bottom of 110.

The fastening part 123 has a groove formed to correspond to the thickness of the etching target substrate 110 to accommodate the dummy region formed at the lower edge of the etching target substrate 110.

The transfer part 125 is disposed at the lower end of the fastening part 123 and serves to transfer the fastening part 123. The transfer part 125 is formed of a roller, a chain, a conveyor belt, or the like, and another configuration for transferring the fastening part 123 may also be employed.

Meanwhile, although FIG. 4 illustrates that the fastening part 123 and the transfer part 125 are separately formed, for example, the lower end of the etching target substrate 110 is formed integrally like a roller having a groove formed on the upper part. It can be configured to serve to support / support and transport.

The roller 121 and the transfer part 125 are driven by driving means (not shown). However, the driving means may drive only one of the roller 121 or the transfer unit 125.

Even if only the roller 121 is driven by the driving means, the transfer part 125 is transferred by the driving force of the roller 121, and serves to support the fastening part 123.

On the other hand, even if only the conveying unit 125 is driven by the driving means, the roller 121 is rotated by the driving force of the conveying unit 125, wherein the roller 121 is etched on both sides of the vertically etched substrate 110 It serves to prevent the substrate 110 from bending to the left and right.

5 is a view schematically showing the configuration of a transfer unit according to another embodiment of the present invention.

As shown in FIG. 5, the transfer unit 120 according to another exemplary embodiment of the present invention includes a dummy region formed at upper and lower edges of the etching target substrate 110 to support the etching target substrate 110 standing vertically. It comprises a fastening portion 123 for receiving the transfer portion 125 for transferring the fastening portion 123 and.

This is to achieve the transfer function of the etching target substrate 110 without the roller 121 is provided on both sides of the etching target substrate 110, the roller 121 is in contact with the dummy area of the etching target substrate 110 In the case of transferring the etching substrate 110, the etching liquid is buried in the roller 121 to prevent occurrence of slipping problems with the etching target substrate 110, and also supports both upper and lower ends of the etching target substrate 110. The problem that the etching substrate 110 is bent from side to side is also prevented. In addition, even if the roller 121 is disposed between the dummy regions of the etching target substrate 110, the problem of preventing the diffusion of the etchant is prevented.

The structure of the fastening part 123 and the transfer part 125 disposed at the lower end of the etching target substrate 110 is the same as that shown in FIG. 4, and the fastening part and the transfer part disposed at the upper end of the etching target substrate 110 are also provided. It is formed in the same structure except that the arrangement position is different. Therefore, the same reference numerals are used in the drawings.

The transfer part 125 disposed on the upper and lower ends of the etching target substrate 110 is driven by a driving means (not shown), and achieves the same transfer function even when only one transfer part 125 is driven.

On the other hand, since the etching apparatus 100 according to the present invention is a device for etching a plurality of etching target substrate 110 is composed of a vertical multi-row, the transfer unit 120 is also composed of a plurality, each transfer unit is In consideration of the difference in the etching process time according to the type of the substrate to be etched, the speed can be adjusted.

As shown in FIG. 3, the etching bath of the etching apparatus 100 according to the exemplary embodiment of the present invention may include a first etching bath 130 disposed on the left side of the rotating unit 140 to be described later and an agent disposed on the right side. It is composed of two etching baths 150, both etching baths may be configured in the same, so the detailed description of the second etching bath 150 will be replaced by the description of the first etching bath 130 described above.

The first etching bath 130 has an internal space for receiving the etching target substrate 110 to be transferred in a vertically standing state, the plurality of etching nozzles for spraying the etching solution on the surface of the etching target substrate 110 therein 133 and the nozzle pipe 131 in which this etching nozzle 133 was formed are comprised.

The etching nozzle 133 and the nozzle pipe 131 are installed on both sides of the printed circuit board at a predetermined distance from the etching target substrate 110 transported in a vertically standing state, and the etching nozzle 133 is installed on the nozzle pipe 131. At equal intervals.

In addition, in order to facilitate the maintenance and repair of the etching apparatus 100, the first etching bath 130 is made of a transparent or semi-transparent material so that the inside can be seen with the naked eye, the first etching bath 130 A door (not shown) is provided on one side of the.

3 to 5, a plurality of nozzle pipes 131 and a plurality of etching nozzles 133 formed in the nozzle pipes 131 are provided in the first etching bath 130.

In addition, although the nozzle pipe 131 is illustrated as being vertically formed in FIG. 2, a plurality of nozzle pipes 131 may be formed horizontally. At this time, the etching nozzle 133 formed in the nozzle pipe 131 injects the etching liquid on the upper and lower surfaces of the etching target substrate 110.

When the plurality of nozzle pipes 131 are provided in the first etching bath 130, the nozzle pipes 131 formed at the edges of the first etching bath 130 face the inside through which the etching target substrate 110 passes. An etching nozzle 133 is formed on one surface of the nozzle pipe 131, and an etching nozzle 133 is formed on both surfaces of the nozzle pipe 131 except for the nozzle pipe 131 formed at an edge thereof.

That is, when the inside of the etching bath is configured in a vertical multi-row, the etching nozzles 133 are provided on both sides except for the nozzle pipe 131 formed at the edges, so that the etching nozzles are used rather than using a plurality of conventional horizontal etching apparatuses. The number of 133 can be reduced, ultimately reducing the space occupied by the etching apparatus 100.

However, when the number of the nozzle pipes 131 formed inside the etching bath becomes too large to etch too many etching target substrates at once, the size of the etching apparatus 100 becomes too large and the etching solution supply tank 190 to be described later. And there arises a problem that the capacity of the etching liquid storage tank 170 is too large, it is preferable to install two or more nozzle pipes 131 or less.

In addition, the etching nozzle 133 is comprised so that the injection amount, injection speed, and injection direction of etching liquid can be adjusted.

The injection amount of the etching liquid is controlled by a plurality of injection holes (not shown) formed in the etching nozzle 133.

At this time, the injection speed of the etching liquid is adjustable by adjusting the opening and closing range of the injection port. For example, when the etching solution is to be injected quickly, the injection speed of the etching solution is increased by reducing the area in which the etching solution is injected by opening and closing part of the injection hole.

The injection direction of the etching liquid is adjusted by, for example, installing the etching nozzle 131 formed in the nozzle pipe 131 so as to be rotatable.

According to the present invention, the etching nozzle 133 is configured such that the injection amount, the injection speed, and the injection direction of the etching solution are controlled to achieve simultaneous etching of various etching target substrates 110.

For example, the etching apparatus 100 according to the present invention performs etching of a single-sided printed circuit board, a double-sided printed circuit board or a multilayer printed circuit board.

In the case of a single-sided printed circuit board, etching is performed by controlling the opening and closing of the injection hole formed in the etching nozzle 133 so that the etching liquid is injected only in the etching nozzle in the direction in which the etching liquid is to be injected and the etching liquid is not injected in the other direction.

Of course, in the case of a double-sided or multilayer printed circuit board, the etching is performed by adjusting the etching nozzle 133 so that the etching solution is sprayed on both sides.

In addition, when the circuit patterns to be formed simultaneously etch different etching target substrates 110, etching is optimized for each etching target substrate 110 by adjusting the spray nozzle 133 according to the etching target substrate 110 to be transferred. Do this.

As shown in FIG. 3, the etchant is supplied from the supply tank 190 to each nozzle pipe 131 through the supply pipe 191, and the etchant supplied to the nozzle pipe 131 is supplied through the etching nozzle 133. Sprayed.

As described above, when the etching target substrate 110 is transferred only to some rows, the control valves 193a, 193b, and 193c which control the etching liquid from being supplied to the nozzle pipe 131 in the empty row may be provided with the supply pipe 191. It may be provided between the nozzle pipe 131. On the other hand, even when there are no control valves 193a, 193b, and 193c, the same function can be achieved by controlling whether the etching nozzle 133 is opened.

When the etchant injected by the etching nozzle 133 drops to the lower portion of the first etching bath 130 after etching the etching target substrate 110, it is introduced into the storage tank 170 through a pipe. Chemical treatment is performed to supply the etching solution to the supply tank 190 so that the etching solution used in the storage tank 170 can be reused. The etchant is circulated through a pump (not shown).

6 is a view schematically showing the configuration of a rotating unit according to another embodiment of the present invention.

As shown in FIG. 6, the rotating unit 140 is used to rotate the substrate to be etched 110, and a driving unit for rotating the clamp arm 141 and the clamp arm 141 clamping the substrate to be etched 110. 143).

The clamp arm 141 clamps the dummy region formed at the edge of the etching target substrate 110 which is passed through the first etching bath 130 and is vertically transferred.

The driving unit 143 rotates the rotating shaft, and the rotating shaft is connected to the clamp arm 141. Since the etching target substrate 110 is rotated 180 ° to be injected into the second etching bath 150, the driving unit 143 is configured to stop after rotating the rotating shaft 180 180 °.

As shown in FIG. 2, the etched substrate 110 rotated 180 ° by the rotating unit 140 has the clamp arm 141 moved to the second etching bath 150 through the transfer unit 120. After being transferred, the liquid is introduced into the second etching bath 150 after the rotation of 180 °, thereby reducing the liquid rise phenomenon of the lower part of the etching target substrate 110 and improving the etching performance.

Referring to the operation of the etching apparatus 100 according to the present invention configured as described above are as follows.

First, the etching target substrate 110 standing vertically is transferred into the first etching bath 130 through the transfer unit 120.

The etching target substrate 110 transferred to the inside of the first etching bath 130 is etched by the etching liquid sprayed through the etching nozzle 133 formed in the nozzle pipe 131. At this time, the etching liquid injected into the nozzle pipe 131 is controlled through the control valves 193a, 193b, and 193c according to the structure, type, and number of the transferred etching target substrate 110, and the injection amount through the etching nozzle 133. , Injection speed and injection direction are controlled.

The etching target substrate 110 passing through the first etching bath 130 is clamped by the clamp arm 141 of the rotating unit 140 and rotated by 180 °.

Thereafter, the etching target substrate 110 rotated 180 ° is introduced into the second etching bath 150 through the transfer unit 120, and the etching operation is performed again like the first etching bath 130.

As described above, the etching target is removed by rotating the etching target substrate 110 to form the etching performance.

On the other hand, the present invention is not limited to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations can be made without departing from the spirit and scope of the present invention. Therefore, variations or modifications will have to belong to the claims of the present invention.

Claims (9)

A transfer unit for vertically conveying the substrate to be etched; A first etching bath for etching the etching target substrate transferred by the transfer unit; A rotating unit for rotating the etched substrate passing through the first etching bath; And A second etching bath for etching the transferred etching target substrate when the etching target substrate rotated by the rotating unit is transferred by the transfer unit; Including, The first etching bath and the second etching bath includes a plurality of nozzle pipes provided on both surfaces of the etching target substrate so as to be spaced apart from the etching target substrate and having a plurality of nozzles for spraying etching liquid on the surface of the etching target substrate. , The nozzle pipes formed at the edges of the first etching bath and the second etching bath among the plurality of nozzle pipes include nozzles for injecting etching liquid to the inside through which the etching target substrate passes, except for the nozzle pipes formed at the edges. Etching apparatus, characterized in that the nozzle pipe comprises a nozzle for spraying the etching solution on both sides. The method according to claim 1, And the transfer unit comprises a plurality of rollers formed to correspond to both sides of the etched substrate in order to transfer the etched substrate in a vertically standing state. The method according to claim 2, The transfer unit may further include a fastening part having a groove for receiving a dummy region formed at a lower edge of the etched substrate to support the vertically etched substrate and a transfer part for transferring the fastening portion. . The method according to claim 1, The transfer unit includes an upper / lower fastening part formed with a groove for receiving a dummy area formed at upper and lower edges of the etched substrate in order to convey the etched substrate in a vertically upright position, and a conveying part for transferring the fastening part. Etching apparatus, characterized in that. delete delete The method according to claim 1, And the nozzle is formed such that an injection amount, an injection speed, and an injection direction of the etchant injected into the etching target substrate can be adjusted according to the type of etching target substrate passing through the etching bath. The method according to claim 1, The transfer unit is composed of a plurality of transfer units to transfer the plurality of etched substrates passing through the transfer chamber, Etching apparatus, characterized in that for each of the plurality of transfer unit is the feed rate is adjusted. The method according to claim 1, And the rotary unit includes a clamp arm for clamping a dummy region formed at an edge of the etched substrate passing through the first etching bath, and a driving part for rotating the clamp arm by 180 °.