KR100919149B1 - 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법 - Google Patents

포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법

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Publication number
KR100919149B1
KR100919149B1 KR1020077027242A KR20077027242A KR100919149B1 KR 100919149 B1 KR100919149 B1 KR 100919149B1 KR 1020077027242 A KR1020077027242 A KR 1020077027242A KR 20077027242 A KR20077027242 A KR 20077027242A KR 100919149 B1 KR100919149 B1 KR 100919149B1
Authority
KR
South Korea
Prior art keywords
group
structural unit
acid
alkyl
acrylic acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020077027242A
Other languages
English (en)
Korean (ko)
Other versions
KR20080003923A (ko
Inventor
마사아키 무로이
고타 아츠치
다카히로 나카무라
마사카즈 야마다
겐스케 사이쇼
마사루 다케시타
다카노리 야마기시
도모 오이카와
Original Assignee
도오꾜오까고오교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도오꾜오까고오교 가부시끼가이샤 filed Critical 도오꾜오까고오교 가부시끼가이샤
Publication of KR20080003923A publication Critical patent/KR20080003923A/ko
Application granted granted Critical
Publication of KR100919149B1 publication Critical patent/KR100919149B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/281—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing only one oxygen, e.g. furfuryl (meth)acrylate or 2-methoxyethyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/38—Esters containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00—Systems containing at least three condensed rings
    • C07C2603/56—Ring systems containing bridged rings
    • C07C2603/58—Ring systems containing bridged rings containing three rings
    • C07C2603/70—Ring systems containing bridged rings containing three rings containing only six-membered rings
    • C07C2603/74—Adamantanes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020077027242A 2005-05-10 2006-04-26 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법 Expired - Lifetime KR100919149B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005137777A JP4510695B2 (ja) 2005-05-10 2005-05-10 ポジ型レジスト組成物およびレジストパターン形成方法
JPJP-P-2005-00137777 2005-05-10

Publications (2)

Publication Number Publication Date
KR20080003923A KR20080003923A (ko) 2008-01-08
KR100919149B1 true KR100919149B1 (ko) 2009-09-28

Family

ID=37396407

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077027242A Expired - Lifetime KR100919149B1 (ko) 2005-05-10 2006-04-26 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법

Country Status (5)

Country Link
US (1) US7972762B2 (https=)
JP (1) JP4510695B2 (https=)
KR (1) KR100919149B1 (https=)
TW (1) TWI350945B (https=)
WO (1) WO2006120897A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4679990B2 (ja) 2005-07-22 2011-05-11 東京応化工業株式会社 ポジ型レジスト組成物の製造方法、ポジ型レジスト組成物およびレジストパターン形成方法
US7604920B2 (en) 2007-08-07 2009-10-20 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition, method of forming resist pattern, polymeric compound, and compound
JP5308678B2 (ja) 2007-08-07 2013-10-09 東京応化工業株式会社 化合物の製造方法、化合物
JP5337579B2 (ja) * 2008-12-04 2013-11-06 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法
JP6002378B2 (ja) 2011-11-24 2016-10-05 東京応化工業株式会社 高分子化合物の製造方法
US8795947B2 (en) 2012-03-22 2014-08-05 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002020639A (ja) * 2000-02-10 2002-01-23 Shipley Co Llc ポジ型フォトレジスト組成物
JP2002348328A (ja) * 2001-05-23 2002-12-04 Nippon Soda Co Ltd アルケニルフェノール系共重合体及びこれらの製造方法
JP2003140351A (ja) * 2001-11-07 2003-05-14 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP2003167347A (ja) * 2001-12-03 2003-06-13 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターンの形成方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3694976B2 (ja) * 1996-05-02 2005-09-14 Ｊｓｒ株式会社 感放射線性樹脂組成物
TW482946B (en) 1997-01-29 2002-04-11 Sumitomo Chemical Co Chemical amplification type positive photoresist composition
JP3873261B2 (ja) * 1997-09-04 2007-01-24 Ｊｓｒ株式会社 感放射線性樹脂組成物、保護膜、層間絶縁膜およびこれらの膜の形成法
EP1143299B1 (en) * 2000-04-04 2003-07-16 Sumitomo Chemical Company, Limited Chemically amplified positive resist composition
US7005230B2 (en) * 2003-01-16 2006-02-28 Jsr Corporation Radiation-sensitive resin composition
JP4088784B2 (ja) * 2003-06-19 2008-05-21 信越化学工業株式会社 高分子化合物の製造方法及びレジスト材料
JP4398783B2 (ja) 2003-09-03 2010-01-13 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP4714488B2 (ja) * 2004-08-26 2011-06-29 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4731200B2 (ja) * 2005-05-10 2011-07-20 丸善石油化学株式会社 半導体リソグラフィー用共重合体の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002020639A (ja) * 2000-02-10 2002-01-23 Shipley Co Llc ポジ型フォトレジスト組成物
JP2002348328A (ja) * 2001-05-23 2002-12-04 Nippon Soda Co Ltd アルケニルフェノール系共重合体及びこれらの製造方法
JP2003140351A (ja) * 2001-11-07 2003-05-14 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP2003167347A (ja) * 2001-12-03 2003-06-13 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターンの形成方法

Also Published As

Publication number Publication date
US7972762B2 (en) 2011-07-05
TW200705105A (en) 2007-02-01
KR20080003923A (ko) 2008-01-08
JP2006317553A (ja) 2006-11-24
JP4510695B2 (ja) 2010-07-28
US20090233220A1 (en) 2009-09-17
TWI350945B (en) 2011-10-21
WO2006120897A1 (ja) 2006-11-16

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