JP4510695B2 - ポジ型レジスト組成物およびレジストパターン形成方法 - Google Patents

ポジ型レジスト組成物およびレジストパターン形成方法 Download PDF

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Publication number
JP4510695B2
JP4510695B2 JP2005137777A JP2005137777A JP4510695B2 JP 4510695 B2 JP4510695 B2 JP 4510695B2 JP 2005137777 A JP2005137777 A JP 2005137777A JP 2005137777 A JP2005137777 A JP 2005137777A JP 4510695 B2 JP4510695 B2 JP 4510695B2
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JP
Japan
Prior art keywords
group
acid
structural unit
lower alkyl
carbon atoms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005137777A
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English (en)
Japanese (ja)
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JP2006317553A5 (https=
JP2006317553A (ja
Inventor
雅昭 室井
浩太 厚地
孝弘 中村
雅和 山田
賢介 最所
優 竹下
孝則 山岸
知 及川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to JP2005137777A priority Critical patent/JP4510695B2/ja
Priority to KR1020077027242A priority patent/KR100919149B1/ko
Priority to US11/913,912 priority patent/US7972762B2/en
Priority to PCT/JP2006/308693 priority patent/WO2006120897A1/ja
Priority to TW095115905A priority patent/TWI350945B/zh
Publication of JP2006317553A publication Critical patent/JP2006317553A/ja
Publication of JP2006317553A5 publication Critical patent/JP2006317553A5/ja
Application granted granted Critical
Publication of JP4510695B2 publication Critical patent/JP4510695B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/281—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing only one oxygen, e.g. furfuryl (meth)acrylate or 2-methoxyethyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/38—Esters containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00—Systems containing at least three condensed rings
    • C07C2603/56—Ring systems containing bridged rings
    • C07C2603/58—Ring systems containing bridged rings containing three rings
    • C07C2603/70—Ring systems containing bridged rings containing three rings containing only six-membered rings
    • C07C2603/74—Adamantanes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2005137777A 2005-05-10 2005-05-10 ポジ型レジスト組成物およびレジストパターン形成方法 Expired - Fee Related JP4510695B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2005137777A JP4510695B2 (ja) 2005-05-10 2005-05-10 ポジ型レジスト組成物およびレジストパターン形成方法
KR1020077027242A KR100919149B1 (ko) 2005-05-10 2006-04-26 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법
US11/913,912 US7972762B2 (en) 2005-05-10 2006-04-26 Positive resist composition and method of forming resist pattern
PCT/JP2006/308693 WO2006120897A1 (ja) 2005-05-10 2006-04-26 ポジ型レジスト組成物およびレジストパターン形成方法
TW095115905A TWI350945B (en) 2005-05-10 2006-05-04 Positive resist composition and resist pattern formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005137777A JP4510695B2 (ja) 2005-05-10 2005-05-10 ポジ型レジスト組成物およびレジストパターン形成方法

Publications (3)

Publication Number Publication Date
JP2006317553A JP2006317553A (ja) 2006-11-24
JP2006317553A5 JP2006317553A5 (https=) 2008-05-01
JP4510695B2 true JP4510695B2 (ja) 2010-07-28

Family

ID=37396407

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005137777A Expired - Fee Related JP4510695B2 (ja) 2005-05-10 2005-05-10 ポジ型レジスト組成物およびレジストパターン形成方法

Country Status (5)

Country Link
US (1) US7972762B2 (https=)
JP (1) JP4510695B2 (https=)
KR (1) KR100919149B1 (https=)
TW (1) TWI350945B (https=)
WO (1) WO2006120897A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7879527B2 (en) 2005-07-22 2011-02-01 Tokyo Ohka Kogyo Co., Ltd. Method of producing positive resist composition, positive resist composition, and method of forming resist pattern

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7604920B2 (en) 2007-08-07 2009-10-20 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition, method of forming resist pattern, polymeric compound, and compound
JP5308678B2 (ja) 2007-08-07 2013-10-09 東京応化工業株式会社 化合物の製造方法、化合物
JP5337579B2 (ja) * 2008-12-04 2013-11-06 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法
JP6002378B2 (ja) 2011-11-24 2016-10-05 東京応化工業株式会社 高分子化合物の製造方法
US8795947B2 (en) 2012-03-22 2014-08-05 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3694976B2 (ja) * 1996-05-02 2005-09-14 Ｊｓｒ株式会社 感放射線性樹脂組成物
TW482946B (en) 1997-01-29 2002-04-11 Sumitomo Chemical Co Chemical amplification type positive photoresist composition
JP3873261B2 (ja) * 1997-09-04 2007-01-24 Ｊｓｒ株式会社 感放射線性樹脂組成物、保護膜、層間絶縁膜およびこれらの膜の形成法
EP1126321A1 (en) 2000-02-10 2001-08-22 Shipley Company LLC Positive photoresists containing crosslinked polymers
EP1143299B1 (en) * 2000-04-04 2003-07-16 Sumitomo Chemical Company, Limited Chemically amplified positive resist composition
JP4776091B2 (ja) * 2001-05-23 2011-09-21 日本曹達株式会社 アルケニルフェノール系共重合体及びこれらの製造方法
JP3963708B2 (ja) * 2001-11-07 2007-08-22 富士フイルム株式会社 ポジ型レジスト組成物
JP3803286B2 (ja) 2001-12-03 2006-08-02 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターンの形成方法
US7005230B2 (en) * 2003-01-16 2006-02-28 Jsr Corporation Radiation-sensitive resin composition
JP4088784B2 (ja) * 2003-06-19 2008-05-21 信越化学工業株式会社 高分子化合物の製造方法及びレジスト材料
JP4398783B2 (ja) 2003-09-03 2010-01-13 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP4714488B2 (ja) * 2004-08-26 2011-06-29 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4731200B2 (ja) * 2005-05-10 2011-07-20 丸善石油化学株式会社 半導体リソグラフィー用共重合体の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7879527B2 (en) 2005-07-22 2011-02-01 Tokyo Ohka Kogyo Co., Ltd. Method of producing positive resist composition, positive resist composition, and method of forming resist pattern

Also Published As

Publication number Publication date
US7972762B2 (en) 2011-07-05
TW200705105A (en) 2007-02-01
KR20080003923A (ko) 2008-01-08
JP2006317553A (ja) 2006-11-24
KR100919149B1 (ko) 2009-09-28
US20090233220A1 (en) 2009-09-17
TWI350945B (en) 2011-10-21
WO2006120897A1 (ja) 2006-11-16

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