JP2006317553A5 - - Google Patents
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- Publication number
- JP2006317553A5 JP2006317553A5 JP2005137777A JP2005137777A JP2006317553A5 JP 2006317553 A5 JP2006317553 A5 JP 2006317553A5 JP 2005137777 A JP2005137777 A JP 2005137777A JP 2005137777 A JP2005137777 A JP 2005137777A JP 2006317553 A5 JP2006317553 A5 JP 2006317553A5
- Authority
- JP
- Japan
- Prior art keywords
- structural unit
- sulfonate
- lower alkyl
- acid
- nonafluorobutanesulfonate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- JGTNAGYHADQMCM-UHFFFAOYSA-M 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F JGTNAGYHADQMCM-UHFFFAOYSA-M 0.000 description 11
- 125000000217 alkyl group Chemical group 0.000 description 10
- XBWQFDNGNOOMDZ-UHFFFAOYSA-N 1,1,2,2,3,3,3-heptafluoropropane-1-sulfonic acid Chemical compound OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)F XBWQFDNGNOOMDZ-UHFFFAOYSA-N 0.000 description 9
- 239000002253 acid Substances 0.000 description 9
- 0 C*(C)C(C)(C)C(OC(C1CC2C3C1)C3OC2=O)=O Chemical compound C*(C)C(C)(C)C(OC(C1CC2C3C1)C3OC2=O)=O 0.000 description 5
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- -1 acrylate ester Chemical class 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- 230000002401 inhibitory effect Effects 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- ITMCEJHCFYSIIV-UHFFFAOYSA-M triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-M 0.000 description 3
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- 125000005396 acrylic acid ester group Chemical group 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 2
- KQTKIMROWOIVHW-UHFFFAOYSA-N (4-hydroxynaphthalen-1-yl)-dimethylsulfanium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=C2C([S+](C)C)=CC=C(O)C2=C1 KQTKIMROWOIVHW-UHFFFAOYSA-N 0.000 description 1
- CVBASHMCALKFME-UHFFFAOYSA-N (4-methoxyphenyl)-diphenylsulfanium Chemical compound C1=CC(OC)=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 CVBASHMCALKFME-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- XWEVKPKISJJUAH-UHFFFAOYSA-N benzenethiol;trifluoromethanesulfonic acid Chemical compound [SH2+]C1=CC=CC=C1.[O-]S(=O)(=O)C(F)(F)F XWEVKPKISJJUAH-UHFFFAOYSA-N 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 125000006267 biphenyl group Chemical group 0.000 description 1
- VGZKCAUAQHHGDK-UHFFFAOYSA-M bis(4-tert-butylphenyl)iodanium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC(C(C)(C)C)=CC=C1[I+]C1=CC=C(C(C)(C)C)C=C1 VGZKCAUAQHHGDK-UHFFFAOYSA-M 0.000 description 1
- QDHFHIQKOVNCNC-UHFFFAOYSA-N butane-1-sulfonic acid Chemical group CCCCS(O)(=O)=O QDHFHIQKOVNCNC-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- GMEXDATVSHAMEP-UHFFFAOYSA-N dimethyl(phenyl)sulfanium Chemical compound C[S+](C)C1=CC=CC=C1 GMEXDATVSHAMEP-UHFFFAOYSA-N 0.000 description 1
- SBQIJPBUMNWUKN-UHFFFAOYSA-M diphenyliodanium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C=1C=CC=CC=1[I+]C1=CC=CC=C1 SBQIJPBUMNWUKN-UHFFFAOYSA-M 0.000 description 1
- LTYMSROWYAPPGB-UHFFFAOYSA-O diphenylsulfanium Chemical compound C=1C=CC=CC=1[SH+]C1=CC=CC=C1 LTYMSROWYAPPGB-UHFFFAOYSA-O 0.000 description 1
- ULHAZGTYRWYHBZ-UHFFFAOYSA-N fluoroform;triphenylsulfanium Chemical compound FC(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 ULHAZGTYRWYHBZ-UHFFFAOYSA-N 0.000 description 1
- AFVFQIVMOAPDHO-UHFFFAOYSA-M methanesulfonate group Chemical group CS(=O)(=O)[O-] AFVFQIVMOAPDHO-UHFFFAOYSA-M 0.000 description 1
- BJMDYNHSWAKAMX-UHFFFAOYSA-N methyl(diphenyl)sulfanium Chemical compound C=1C=CC=CC=1[S+](C)C1=CC=CC=C1 BJMDYNHSWAKAMX-UHFFFAOYSA-N 0.000 description 1
- WLGDAKIJYPIYLR-UHFFFAOYSA-N octane-1-sulfonic acid Chemical group CCCCCCCCS(O)(=O)=O WLGDAKIJYPIYLR-UHFFFAOYSA-N 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical group CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- LYPVBFXTKUJYDL-UHFFFAOYSA-N sulfanium;trifluoromethanesulfonate Chemical compound [SH3+].[O-]S(=O)(=O)C(F)(F)F LYPVBFXTKUJYDL-UHFFFAOYSA-N 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- ZZJNLOGMYQURDL-UHFFFAOYSA-M trifluoromethanesulfonate;tris(4-methylphenyl)sulfanium Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC(C)=CC=C1[S+](C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 ZZJNLOGMYQURDL-UHFFFAOYSA-M 0.000 description 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005137777A JP4510695B2 (ja) | 2005-05-10 | 2005-05-10 | ポジ型レジスト組成物およびレジストパターン形成方法 |
| KR1020077027242A KR100919149B1 (ko) | 2005-05-10 | 2006-04-26 | 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법 |
| US11/913,912 US7972762B2 (en) | 2005-05-10 | 2006-04-26 | Positive resist composition and method of forming resist pattern |
| PCT/JP2006/308693 WO2006120897A1 (ja) | 2005-05-10 | 2006-04-26 | ポジ型レジスト組成物およびレジストパターン形成方法 |
| TW095115905A TWI350945B (en) | 2005-05-10 | 2006-05-04 | Positive resist composition and resist pattern formation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005137777A JP4510695B2 (ja) | 2005-05-10 | 2005-05-10 | ポジ型レジスト組成物およびレジストパターン形成方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006317553A JP2006317553A (ja) | 2006-11-24 |
| JP2006317553A5 true JP2006317553A5 (https=) | 2008-05-01 |
| JP4510695B2 JP4510695B2 (ja) | 2010-07-28 |
Family
ID=37396407
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005137777A Expired - Fee Related JP4510695B2 (ja) | 2005-05-10 | 2005-05-10 | ポジ型レジスト組成物およびレジストパターン形成方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7972762B2 (https=) |
| JP (1) | JP4510695B2 (https=) |
| KR (1) | KR100919149B1 (https=) |
| TW (1) | TWI350945B (https=) |
| WO (1) | WO2006120897A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4679990B2 (ja) | 2005-07-22 | 2011-05-11 | 東京応化工業株式会社 | ポジ型レジスト組成物の製造方法、ポジ型レジスト組成物およびレジストパターン形成方法 |
| US7604920B2 (en) | 2007-08-07 | 2009-10-20 | Tokyo Ohka Kogyo Co., Ltd. | Positive resist composition, method of forming resist pattern, polymeric compound, and compound |
| JP5308678B2 (ja) | 2007-08-07 | 2013-10-09 | 東京応化工業株式会社 | 化合物の製造方法、化合物 |
| JP5337579B2 (ja) * | 2008-12-04 | 2013-11-06 | 東京応化工業株式会社 | ポジ型レジスト組成物、レジストパターン形成方法 |
| JP6002378B2 (ja) | 2011-11-24 | 2016-10-05 | 東京応化工業株式会社 | 高分子化合物の製造方法 |
| US8795947B2 (en) | 2012-03-22 | 2014-08-05 | Tokyo Ohka Kogyo Co., Ltd. | Resist composition and method of forming resist pattern |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3694976B2 (ja) * | 1996-05-02 | 2005-09-14 | Ｊｓｒ株式会社 | 感放射線性樹脂組成物 |
| TW482946B (en) | 1997-01-29 | 2002-04-11 | Sumitomo Chemical Co | Chemical amplification type positive photoresist composition |
| JP3873261B2 (ja) * | 1997-09-04 | 2007-01-24 | Ｊｓｒ株式会社 | 感放射線性樹脂組成物、保護膜、層間絶縁膜およびこれらの膜の形成法 |
| EP1126321A1 (en) | 2000-02-10 | 2001-08-22 | Shipley Company LLC | Positive photoresists containing crosslinked polymers |
| EP1143299B1 (en) * | 2000-04-04 | 2003-07-16 | Sumitomo Chemical Company, Limited | Chemically amplified positive resist composition |
| JP4776091B2 (ja) * | 2001-05-23 | 2011-09-21 | 日本曹達株式会社 | アルケニルフェノール系共重合体及びこれらの製造方法 |
| JP3963708B2 (ja) * | 2001-11-07 | 2007-08-22 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
| JP3803286B2 (ja) | 2001-12-03 | 2006-08-02 | 東京応化工業株式会社 | ポジ型レジスト組成物及びレジストパターンの形成方法 |
| US7005230B2 (en) * | 2003-01-16 | 2006-02-28 | Jsr Corporation | Radiation-sensitive resin composition |
| JP4088784B2 (ja) * | 2003-06-19 | 2008-05-21 | 信越化学工業株式会社 | 高分子化合物の製造方法及びレジスト材料 |
| JP4398783B2 (ja) | 2003-09-03 | 2010-01-13 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
| JP4714488B2 (ja) * | 2004-08-26 | 2011-06-29 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| JP4731200B2 (ja) * | 2005-05-10 | 2011-07-20 | 丸善石油化学株式会社 | 半導体リソグラフィー用共重合体の製造方法 |
-
2005
- 2005-05-10 JP JP2005137777A patent/JP4510695B2/ja not_active Expired - Fee Related
-
2006
- 2006-04-26 US US11/913,912 patent/US7972762B2/en active Active
- 2006-04-26 KR KR1020077027242A patent/KR100919149B1/ko not_active Expired - Lifetime
- 2006-04-26 WO PCT/JP2006/308693 patent/WO2006120897A1/ja not_active Ceased
- 2006-05-04 TW TW095115905A patent/TWI350945B/zh active
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