KR100901551B1 - 비휘발성 메모리 시스템에서 블록 캐싱을 수행하는 방법 및 시스템 - Google Patents

비휘발성 메모리 시스템에서 블록 캐싱을 수행하는 방법 및 시스템 Download PDF

Info

Publication number
KR100901551B1
KR100901551B1 KR1020030075137A KR20030075137A KR100901551B1 KR 100901551 B1 KR100901551 B1 KR 100901551B1 KR 1020030075137 A KR1020030075137 A KR 1020030075137A KR 20030075137 A KR20030075137 A KR 20030075137A KR 100901551 B1 KR100901551 B1 KR 100901551B1
Authority
KR
South Korea
Prior art keywords
block
physical
logical
group
content
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020030075137A
Other languages
English (en)
Korean (ko)
Other versions
KR20040038708A (ko
Inventor
로버트씨. 창
바만 콰와미
파시드 사벳-샤기
핑 리
Original Assignee
샌디스크 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 샌디스크 코포레이션 filed Critical 샌디스크 코포레이션
Publication of KR20040038708A publication Critical patent/KR20040038708A/ko
Application granted granted Critical
Publication of KR100901551B1 publication Critical patent/KR100901551B1/ko
Assigned to 샌디스크 테크놀로지스, 인코포레이티드 reassignment 샌디스크 테크놀로지스, 인코포레이티드 권리의 전부이전등록 Assignors: 샌디스크 코포레이션
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G06F12/0866—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches for peripheral storage systems, e.g. disk cache
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/20—Employing a main memory using a specific memory technology
    • G06F2212/202—Non-volatile memory
    • G06F2212/2022—Flash memory
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7203—Temporary buffering, e.g. using volatile buffer or dedicated buffer blocks

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System (AREA)
KR1020030075137A 2002-10-28 2003-10-27 비휘발성 메모리 시스템에서 블록 캐싱을 수행하는 방법 및 시스템 Expired - Fee Related KR100901551B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US42191002P 2002-10-28 2002-10-28
US60/421,910 2002-10-28

Publications (2)

Publication Number Publication Date
KR20040038708A KR20040038708A (ko) 2004-05-08
KR100901551B1 true KR100901551B1 (ko) 2009-06-08

Family

ID=32094174

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020030075137A Expired - Fee Related KR100901551B1 (ko) 2002-10-28 2003-10-27 비휘발성 메모리 시스템에서 블록 캐싱을 수행하는 방법 및 시스템

Country Status (5)

Country Link
US (1) US7174440B2 (https=)
EP (1) EP1416389A3 (https=)
JP (1) JP2004152302A (https=)
KR (1) KR100901551B1 (https=)
CN (1) CN1329842C (https=)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI260019B (en) 2004-05-21 2006-08-11 Fujitsu Ltd Semiconductor memory device and memory system
JP3942612B2 (ja) * 2004-09-10 2007-07-11 東京エレクトロンデバイス株式会社 記憶装置、メモリ管理方法及びプログラム
US7366826B2 (en) * 2004-12-16 2008-04-29 Sandisk Corporation Non-volatile memory and method with multi-stream update tracking
US7412560B2 (en) * 2004-12-16 2008-08-12 Sandisk Corporation Non-volatile memory and method with multi-stream updating
KR100703727B1 (ko) 2005-01-12 2007-04-05 삼성전자주식회사 비휘발성 메모리, 이를 위한 사상 제어 장치 및 방법
CN101194238B (zh) * 2005-06-24 2010-05-19 松下电器产业株式会社 存储器控制器、非易失性存储装置、非易失性存储系统及数据写入方法
US20060294292A1 (en) * 2005-06-27 2006-12-28 Illendula Ajith K Shared spare block for multiple memory file volumes
CN100395704C (zh) * 2005-08-27 2008-06-18 海信集团有限公司 一种在Nand Flash存储器中直接建立只读文件系统的方法
JP4751163B2 (ja) * 2005-09-29 2011-08-17 株式会社東芝 メモリシステム
JP4936271B2 (ja) 2006-01-20 2012-05-23 株式会社メガチップス 半導体記憶装置
KR100781520B1 (ko) 2006-02-24 2007-12-03 삼성전자주식회사 비휘발성 메모리가 캐쉬로 사용되는 저장 장치 및 이를위한 맵핑 정보 복구 방법
KR101185617B1 (ko) * 2006-04-04 2012-09-24 삼성전자주식회사 외부 메모리의 부하를 줄일 수 있는 웨어 레벨링 기법에의한 플래시 파일 시스템의 동작 방법
US7971071B2 (en) * 2006-05-24 2011-06-28 Walkoe Wilbur J Integrated delivery and protection device for digital objects
US8190961B1 (en) 2006-11-28 2012-05-29 Marvell International Ltd. System and method for using pilot signals in non-volatile memory devices
DE112006004185T5 (de) 2006-12-27 2009-11-19 Intel Corporation, Santa Clara Verfahren zum Verwalten von Daten in einem nichtflüchtigen Speicher
US7791952B2 (en) * 2007-01-30 2010-09-07 Micron Technology, Inc. Memory device architectures and operation
US7869277B1 (en) 2007-04-25 2011-01-11 Apple Inc. Managing data writing to memories
JP2008299513A (ja) * 2007-05-30 2008-12-11 Sony Corp データ記憶装置およびその制御方法
JP4210318B1 (ja) * 2007-11-28 2009-01-14 株式会社京都ソフトウェアリサーチ データ格納システムおよびデータ格納プログラム
CN101661431B (zh) * 2008-08-29 2011-11-09 群联电子股份有限公司 用于快闪存储器的区块管理方法、快闪储存系统及控制器
TWI473100B (zh) * 2008-09-05 2015-02-11 A Data Technology Co Ltd Flash memory system and its operation method
US20100082903A1 (en) * 2008-09-30 2010-04-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory drive, information processing apparatus and data access control method of the non-volatile semiconductor memory drive
US8325795B1 (en) 2008-12-01 2012-12-04 Adobe Systems Incorporated Managing indexing of live multimedia streaming
US8782143B2 (en) * 2008-12-17 2014-07-15 Adobe Systems Incorporated Disk management
TWI420528B (zh) * 2009-03-11 2013-12-21 Silicon Motion Inc 用來增進一快閃記憶體的效能之方法以及相關之可攜式記憶裝置及其控制器
US8572309B2 (en) * 2009-03-12 2013-10-29 Marvell World Trade Ltd. Apparatus and method to protect metadata against unexpected power down
US8412987B2 (en) * 2009-06-30 2013-04-02 Micron Technology, Inc. Non-volatile memory to store memory remap information
US8255661B2 (en) * 2009-11-13 2012-08-28 Western Digital Technologies, Inc. Data storage system comprising a mapping bridge for aligning host block size with physical block size of a data storage device
US8694814B1 (en) * 2010-01-10 2014-04-08 Apple Inc. Reuse of host hibernation storage space by memory controller
US20130042051A1 (en) * 2011-08-10 2013-02-14 Skymedi Corporation Program method for a non-volatile memory
CN102866955A (zh) * 2012-09-14 2013-01-09 记忆科技(深圳)有限公司 一种闪存数据管理方法及系统
CN104396043B (zh) * 2013-04-29 2016-10-19 株式会社Lg化学 线缆型二次电池用包装和包含其的线缆型二次电池
US9852066B2 (en) * 2013-12-20 2017-12-26 Sandisk Technologies Llc Systems and methods of address-aware garbage collection
CN106326133B (zh) * 2015-06-29 2020-06-16 华为技术有限公司 存储系统、存储管理装置、存储器、混合存储装置及存储管理方法
CN107924374A (zh) * 2015-10-15 2018-04-17 腾赛拉网络有限公司 通信终端中的内容的新鲜度感知呈现
CN106843743B (zh) * 2015-12-03 2019-10-25 群联电子股份有限公司 数据程序化方法、存储器储存装置及存储器控制电路单元
US11283895B2 (en) 2017-06-19 2022-03-22 Tensera Networks Ltd. Silent updating of content in user devices
CN113885778B (zh) * 2020-07-02 2024-03-08 慧荣科技股份有限公司 数据处理方法及对应的数据储存装置
CN113961140B (zh) 2020-07-02 2024-06-11 慧荣科技股份有限公司 数据处理方法及对应的数据储存装置
US11403011B1 (en) * 2021-04-05 2022-08-02 Western Digital Technologies, Inc. Host memory buffer allocation management

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5222109A (en) * 1990-12-28 1993-06-22 Ibm Corporation Endurance management for solid state files
US5297148A (en) * 1989-04-13 1994-03-22 Sundisk Corporation Flash eeprom system
US5438573A (en) * 1991-09-13 1995-08-01 Sundisk Corporation Flash EEPROM array data and header file structure
US5860082A (en) * 1996-03-28 1999-01-12 Datalight, Inc. Method and apparatus for allocating storage in a flash memory

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2685173B2 (ja) 1986-05-31 1997-12-03 キヤノン株式会社 メモリ書き込み制御方法
JPH07109717B2 (ja) 1986-05-31 1995-11-22 キヤノン株式会社 メモリ書き込み制御方法
US5268870A (en) 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
US6230233B1 (en) 1991-09-13 2001-05-08 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
JP2856621B2 (ja) 1993-02-24 1999-02-10 インターナショナル・ビジネス・マシーンズ・コーポレイション 一括消去型不揮発性メモリおよびそれを用いる半導体ディスク装置
US5404485A (en) * 1993-03-08 1995-04-04 M-Systems Flash Disk Pioneers Ltd. Flash file system
US5388083A (en) 1993-03-26 1995-02-07 Cirrus Logic, Inc. Flash memory mass storage architecture
US5845313A (en) 1995-07-31 1998-12-01 Lexar Direct logical block addressing flash memory mass storage architecture
US5907856A (en) 1995-07-31 1999-05-25 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US5835935A (en) 1995-09-13 1998-11-10 Lexar Media, Inc. Method of and architecture for controlling system data with automatic wear leveling in a semiconductor non-volatile mass storage memory
US6125435A (en) 1995-09-13 2000-09-26 Lexar Media, Inc. Alignment of cluster address to block addresses within a semiconductor non-volatile mass storage memory
JPH09185551A (ja) * 1996-01-08 1997-07-15 Mitsubishi Electric Corp 半導体記憶装置
US5860124A (en) * 1996-09-30 1999-01-12 Intel Corporation Method for performing a continuous over-write of a file in nonvolatile memory
US6000006A (en) 1997-08-25 1999-12-07 Bit Microsystems, Inc. Unified re-map and cache-index table with dual write-counters for wear-leveling of non-volatile flash RAM mass storage
US5937425A (en) 1997-10-16 1999-08-10 M-Systems Flash Disk Pioneers Ltd. Flash file system optimized for page-mode flash technologies
KR100297986B1 (ko) 1998-03-13 2001-10-25 김영환 플래쉬 메모리 셀 어레이의 웨어 레벨링 시스템 및 웨어 레벨링 방법
US6260156B1 (en) 1998-12-04 2001-07-10 Datalight, Inc. Method and system for managing bad areas in flash memory
US6426893B1 (en) 2000-02-17 2002-07-30 Sandisk Corporation Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
EP1220229B1 (en) * 2000-12-29 2009-03-18 STMicroelectronics S.r.l. An electrically modifiable, non-volatile, semiconductor memory which can keep a datum stored until an operation to modify the datum is completed
JP3967121B2 (ja) * 2001-12-11 2007-08-29 株式会社ルネサステクノロジ ファイルシステム、ファイルシステム制御方法およびファイルシステムを制御するためのプログラム

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5297148A (en) * 1989-04-13 1994-03-22 Sundisk Corporation Flash eeprom system
US5222109A (en) * 1990-12-28 1993-06-22 Ibm Corporation Endurance management for solid state files
US5438573A (en) * 1991-09-13 1995-08-01 Sundisk Corporation Flash EEPROM array data and header file structure
US5860082A (en) * 1996-03-28 1999-01-12 Datalight, Inc. Method and apparatus for allocating storage in a flash memory

Also Published As

Publication number Publication date
JP2004152302A (ja) 2004-05-27
KR20040038708A (ko) 2004-05-08
US7174440B2 (en) 2007-02-06
CN1504896A (zh) 2004-06-16
CN1329842C (zh) 2007-08-01
EP1416389A3 (en) 2006-11-02
EP1416389A2 (en) 2004-05-06
US20040083348A1 (en) 2004-04-29

Similar Documents

Publication Publication Date Title
KR100901551B1 (ko) 비휘발성 메모리 시스템에서 블록 캐싱을 수행하는 방법 및 시스템
US20150309927A1 (en) Hybrid Non-Volatile Memory System
US9940040B2 (en) Systems, solid-state mass storage devices, and methods for host-assisted garbage collection
KR101759811B1 (ko) 솔리드 스테이트 메모리를 포멧팅하기 위한 메모리 제어기, 방법, 및 솔리드 스테이트 메모리 시스템
KR101066937B1 (ko) 메모리 시스템 및 그 데이터 소거 방법
US20080028132A1 (en) Non-volatile storage device, data storage system, and data storage method
US20120246397A1 (en) Storage device management device and method for managing storage device
CN101681299A (zh) 存储器系统
WO2012081731A1 (en) Semiconductor storage device
CN110879793B (zh) 存储器管理方法、存储器存储装置及存储器控制电路单元
TWI805445B (zh) 借助額外實體位址資訊來進行記憶體裝置之存取控制的方法、記憶體裝置以及記憶體裝置的控制器
US11334480B2 (en) Data storage device and non-volatile memory control method
US20090055576A1 (en) Memory controller, nonvolatile storage device, nonvolatile storage system, and data writing method
US20100318726A1 (en) Memory system and memory system managing method
TWI718710B (zh) 資料儲存裝置以及非揮發式記憶體控制方法
JP4977703B2 (ja) 予定再生操作を伴う不揮発性メモリ
US20090210612A1 (en) Memory controller, nonvolatile memory device, and nonvolatile memory system
US11392489B2 (en) Data storage device and non-volatile memory control method
KR20090042077A (ko) 파일 관리 시스템 및 방법
EP2264602A1 (en) Memory device for managing the recovery of a non volatile memory
US11036414B2 (en) Data storage device and control method for non-volatile memory with high-efficiency garbage collection
US10896004B2 (en) Data storage device and control method for non-volatile memory, with shared active block for writing commands and internal data collection
US12579064B2 (en) Non-volatile memory controller and control method with improved garbage collection technology
US9465546B2 (en) Memory control method, memory control program, and semiconductor integrated circuit device
KR20110096814A (ko) 저장 장치 및 컴퓨팅 시스템 그리고 그것의 데이터 관리 방법

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

A302 Request for accelerated examination
PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

FPAY Annual fee payment

Payment date: 20130522

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20140530

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20150430

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20160427

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

FPAY Annual fee payment

Payment date: 20170504

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20180427

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20190530

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20230602

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20230602