KR100861819B1 - Exhausting apparatus of the process chamber for manufacturing a semiconductor device - Google Patents

Abstract

The present invention relates to an exhaust device of a process chamber for semiconductor manufacturing.

The present invention provides a semiconductor having vacuum pumps 216 and 218 on an exhaust pipe 210 extending outward from the process chamber 100 to exhaust contaminants generated in the process chamber 100 as the process proceeds. In the exhaust chamber of the process chamber for manufacturing, in order to prevent the pollutants to be exhausted attached to the inner wall of the exhaust pipe 210 is provided for each appropriate place on the exhaust pipe 210 to impart rotational force to the exhaust flow of the pollutants It characterized in that it comprises a rotation force applying means.

Therefore, a strong exhaust flow is formed to prevent contaminants from adhering to and accumulating on the inner wall of the exhaust pipe, so that the proper exhaust pressure can be maintained continuously to exhaust the contaminants more completely, thereby preventing contamination of the wafer. It is possible to improve the production yield, increase productivity by increasing the facility operation rate, and also prevent the backflow to prevent damage to the turbopump.

Exhaust, Vacuum, Turbo Pump, Dry Pump, Rotary Fan, Process Chamber, Semiconductor

Description

EXHAUSTING APPARATUS OF THE PROCESS CHAMBER FOR MANUFACTURING A SEMICONDUCTOR DEVICE}

1 is a block diagram showing an exhaust device of a process chamber for manufacturing a conventional semiconductor,

2 is a block diagram showing an exhaust device of a process chamber for manufacturing a semiconductor according to an embodiment of the present invention,

Figure 3 is an explanatory diagram showing the exhaust flow before (a) and after the installation (b) of the rotary fan according to the present invention installed on the exhaust pipe.

<Description of the symbols for the main parts of the drawings>

100: process chamber 210: exhaust pipe

210a: bend portion 212: pressure gauge

214: valve means 216: turbo pump

218: dry pump 220: rotary fan

220a: impeller

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exhaust device of a process chamber for manufacturing a semiconductor. More particularly, a contaminant exhausted by attaching a rotating fan to an appropriate position on an exhaust pipe and applying rotational force to the exhaust flow is attached to the inner wall of the exhaust pipe. A vent chamber of a process chamber for manufacturing a semiconductor that is prevented from being stacked.

In general, a semiconductor device is manufactured by performing a series of unit processes on a wafer, and a manufacturing chamber for performing each unit process includes a process chamber for forming an enclosed work space therein that is isolated from the outside. (process chamber) is provided.

In addition, during the process, the inside of the process chamber should be formed in a clean high vacuum state, and the wafer manufactured by completely exhausting various foreign substances generated therein in accordance with the process should not be contaminated.

For example, in an etching apparatus that performs an etching process, the inside of the process chamber is made in a high vacuum state, plasma is formed therein, and a predetermined process gas is introduced to remove a predetermined region on the wafer. As the process proceeds, various contaminants such as unreacted process gases, by-products, particles, and polymers are generated in the process chambers. As a result, the wafer may be contaminated, resulting in lowered yield.

Therefore, the process chamber is provided with a vacuum exhaust device for making the inside of the process in a high vacuum state and exhausting and removing various contaminants generated therein during the process progress. Shown in

Referring to the drawings, one end is connected to communicate with a predetermined portion of the side of the process chamber 100 is provided with an exhaust pipe 210 extending to the outside, a vacuum pump (vacuum pump for exhaust action on the exhaust pipe 210) ) 216 and 218 will be installed.

At this time, the vacuum pumps (216, 218) are installed in close proximity to the process chamber 100, the turbo pump (216) which is a high vacuum pump that provides a strong pumping force, and the process outside the turbo pump (216) It is composed of a dry pump 218, which is a low vacuum pump which is installed at a distance from the chamber 100 to provide a relatively low pumping force.

Here, the above-described turbo pump 216 is provided with a rotating body that rotates at high speed in order to direct the gas molecules to be introduced and increase the momentum, it is not possible to directly exhaust to the atmosphere, it is usually applied to other types of pumps Assisted by

In addition, the above-described dry pump 218 is to provide a rather low pumping force through the reciprocating motion of the piston, and assists the above-described turbo pump 216 from the outside.

That is, the combination of the turbo pump 216 and the dry pump 218 provides a vacuum and exhaust action.

Further, the valve means 214 for controlling the pumping force while opening and closing the exhaust pipe 210 is provided at appropriate positions, and a pressure gauge 212 for measuring pressure is also provided. .

Thus, the operation thereof will be described. When the wafer (not shown) is loaded into the process chamber 100, all the valve means 214 are opened, and then the turbo pump 216 and the dry pump on the exhaust pipe 210 are opened. 218 is operated at the same time to exert a pumping force, accordingly, the process chamber 100 is maintained in a high vacuum state, and in addition to the various contaminants generated in the process chamber 100 in accordance with the process progress It is exhausted to the outside through the exhaust pipe (210).

However, the following problems arise in the conventional exhaust apparatus as described above.

That is, in reality, the problem that the foreign matter is exhausted through the exhaust pipe 210 is attached to the inner wall of the exhaust pipe 210 and accumulated in the process of exhausting.

For example, in the etching facility, the polymer in the contaminants was easily deposited and attached to the inner wall of the exhaust pipe 210.

In particular, contaminants did not pass smoothly at the bent portion 210a that is bent on the exhaust pipe 210 and used to be more easily accumulated.

As such, when contaminants are attached to and accumulated on the inner wall of the exhaust pipe 210, the pumping force is lowered to prevent smooth process progress, thereby reducing productivity due to frequent stoppages, and preventing exhaustion of contaminants. As a result, contamination of the wafer to be manufactured is caused, thereby lowering the production yield.

Therefore, at the present time, forced heating (heating), etc. to the location of the exhaust pipe 210 to which the contaminants are frequently attached, to prevent the deposition of contaminants, but this situation has a problem in that the efficiency is rather low.

In addition, in the related art, when the dry pump 218 breaks down during the process, a problem arises in that a backflow occurs and damages the turbopump 216.

The present invention was devised to solve the above problems, by installing a rotating fan (rotating) to operate at every appropriate place on the exhaust pipe to give a strong rotational force to the exhaust flow contaminants pass through the exhaust pipe more smoothly to the inner wall An object of the present invention is to provide an exhaust device of a process chamber for manufacturing a semiconductor, which prevents a back flow during down of the dry pump while not being attached thereto.

The above objects and various advantages of the present invention will become more apparent from the preferred embodiments of the invention described below with reference to the accompanying drawings by those skilled in the art.

The exhaust chamber of the process chamber for manufacturing a semiconductor of the present invention for achieving the above object, a vacuum pump on the exhaust pipe extending from the process chamber to the outside to exhaust the contaminants generated in the process chamber as the process proceeds. In the exhaust chamber of the process chamber for manufacturing a semiconductor comprising: a rotational force applying means which is provided for each appropriate place on the exhaust pipe to provide a rotational force to the exhaust flow of the contaminant in order to prevent the exhausted contaminants adhere to the inner wall of the exhaust pipe; It characterized by having a.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a block diagram showing an exhaust device of a process chamber for manufacturing a semiconductor according to a preferred embodiment of the present invention.

Prior to the description, the same reference numerals are given to the same components as in the related art, and detailed description thereof will be omitted.

An exhaust device is provided to exhaust various contaminants generated in the process chamber 100 as the process progresses. The exhaust device includes an exhaust pipe 210 extending long from the process chamber 100 to the outside, and a corresponding exhaust pipe ( It is composed of a turbo pump 216 and a dry pump 218, such as vacuum pumps provided on the 210 to provide an exhaust action.

However, conventionally, pollutants that are exhausted are easily attached to and accumulated on the inner wall of the exhaust pipe 210, and particularly, they are accumulated more severely at the bent portion 210a on the exhaust pipe 210. Accordingly, the pumping force is rapidly lowered, thereby smoothly processing. Used to interrupt progress.

Therefore, in the present invention, in order to solve this problem, the rotary fan (fan) 220 that is rotated for each appropriate place on the exhaust pipe 210 is installed.

The rotating fan 220 is an impeller (220a) is rotated by the attached motor, the impeller (220a) is positioned in the horizontal direction with respect to the flow path in the exhaust pipe (210).

The principle of preventing the adhesion of contaminants to the exhaust pipe 210 by the rotating fan 220 will be briefly described.

In general, all fluids present on Earth rotate counterclockwise in the northern hemisphere and clockwise in the southern hemisphere by the natural Coriolis effect, and thus rotate counterclockwise on the exhaust pipe 210 relative to the northern hemisphere. When the rotating fan 220 may be installed, the fluid passing through the rotating fan 220 may receive a stronger rotational energy in a counterclockwise direction, thereby forming a strong vortex flow in a counterclockwise direction. As a result, the fluid can more smoothly pass through the exhaust pipe 210 as compared with the conventional simple straight flow.

That is, the rotary fan 220 according to the present invention is rotated in a direction that the rotation direction can enhance the Coriolis effect, the exhaust flow of the contaminants by the action of the rotary fan 220 as shown in FIG. , Changing from the conventional straight flow (see FIG. 3 (a)) to the vortex flow with strong rotational force (see FIG. 3 (b)) without the possibility of strong and fast collision and attachment to the inner wall of the exhaust pipe 210. It will be able to pass more smoothly.

Furthermore, since the pollutants exhausted are more easily attached at the bent portion 210a on the exhaust pipe 210, more preferably, the rotating fan 220 is installed at the front side of the bent portion 210a, By forming a strong exhaust flow in the front side it can be made to pass through the bent portion (210a) more smoothly.

Thus, according to the present invention, it becomes possible to prevent the adhesion of contaminants to the inner wall of the exhaust pipe 210, the proper exhaust pressure can be maintained without any abnormality, and also it is possible to exhaust the contaminants more completely, It is possible to improve productivity by increasing facility operation rate and manufacturing yield by preventing pollution.

In addition, when the dry pump 218 fails, the reverse flow can be prevented by the action of the rotating fan 220, so that the turbo pump 216 can be prevented from being damaged by the reverse flow.

In the foregoing description, it should be understood that those skilled in the art can make modifications and changes to the present invention without changing the gist of the present invention as merely illustrative of a preferred embodiment of the present invention.

According to the present invention, a strong exhaust flow is formed to prevent contaminants from adhering to and accumulating on the inner wall of the exhaust pipe, so that an appropriate exhaust pressure can be maintained continuously to exhaust the contaminants more completely, thereby providing By preventing pollution, the production yield can be improved, and productivity can be improved by increasing the operation rate of the facility. In addition, the effect of preventing the backflow from being damaged by the turbopump can be achieved.

Claims (4)

delete A process for manufacturing a semiconductor having vacuum pumps 216 and 218 on an exhaust pipe 210 extending outward from the process chamber 100 to exhaust contaminants generated in the process chamber 100 as the process proceeds. In the exhaust device of the chamber, In order to prevent the pollutants exhausted from being attached to the inner wall of the exhaust pipe 210 is provided for each appropriate place on the exhaust pipe 210 is provided with a rotational force applying means for imparting a rotational force to the exhaust flow of the pollutant, The rotational force applying means, An exhaust device of a process chamber for manufacturing a semiconductor, comprising a rotating fan 220 having an impeller 220a which is rotated in a counterclockwise direction in a northern hemisphere and clockwise in a southern hemisphere by a motor. delete The method of claim 2, The rotating fan 220, Exhaust of the process chamber for semiconductor manufacturing, characterized in that provided on the front side of the bent portion (210a) is bent of the exhaust pipe (210).

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