KR100861207B1 - 유기 금속 화합물의 정제 방법 및 그에 의해 얻어진 유기금속 화합물 - Google Patents
유기 금속 화합물의 정제 방법 및 그에 의해 얻어진 유기금속 화합물 Download PDFInfo
- Publication number
- KR100861207B1 KR100861207B1 KR1020050052182A KR20050052182A KR100861207B1 KR 100861207 B1 KR100861207 B1 KR 100861207B1 KR 1020050052182 A KR1020050052182 A KR 1020050052182A KR 20050052182 A KR20050052182 A KR 20050052182A KR 100861207 B1 KR100861207 B1 KR 100861207B1
- Authority
- KR
- South Korea
- Prior art keywords
- organometallic compound
- compound
- organometallic
- organometallic compounds
- vapor pressure
- Prior art date
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- 150000002902 organometallic compounds Chemical class 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000000746 purification Methods 0.000 title claims abstract description 19
- 239000012535 impurity Substances 0.000 claims abstract description 23
- 238000004821 distillation Methods 0.000 claims abstract description 17
- 239000011261 inert gas Substances 0.000 claims abstract description 12
- 150000001875 compounds Chemical class 0.000 claims abstract description 10
- 150000003961 organosilicon compounds Chemical class 0.000 claims abstract description 8
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 5
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 5
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims description 2
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 claims description 2
- PPWWEWQTQCZLMW-UHFFFAOYSA-N magnesium 5-methylcyclopenta-1,3-diene Chemical compound [Mg+2].C[C-]1C=CC=C1.C[C-]1C=CC=C1 PPWWEWQTQCZLMW-UHFFFAOYSA-N 0.000 claims description 2
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 claims description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 claims description 2
- USZGMDQWECZTIQ-UHFFFAOYSA-N [Mg](C1C=CC=C1)C1C=CC=C1 Chemical compound [Mg](C1C=CC=C1)C1C=CC=C1 USZGMDQWECZTIQ-UHFFFAOYSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 12
- 239000012264 purified product Substances 0.000 abstract description 3
- 239000001307 helium Substances 0.000 description 7
- 229910052734 helium Inorganic materials 0.000 description 7
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 7
- 239000003795 chemical substances by application Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 150000002430 hydrocarbons Chemical class 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 150000002736 metal compounds Chemical class 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- DCFKHNIGBAHNSS-UHFFFAOYSA-N chloro(triethyl)silane Chemical compound CC[Si](Cl)(CC)CC DCFKHNIGBAHNSS-UHFFFAOYSA-N 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- BYLOHCRAPOSXLY-UHFFFAOYSA-N dichloro(diethyl)silane Chemical compound CC[Si](Cl)(Cl)CC BYLOHCRAPOSXLY-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- SONNOUIBKXBPIL-UHFFFAOYSA-N [O-2].[Al+3].[Al+3].[Al+3] Chemical compound [O-2].[Al+3].[Al+3].[Al+3] SONNOUIBKXBPIL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- PDNUHAXBKKDGAM-UHFFFAOYSA-N chloro-diethyl-methylsilane Chemical compound CC[Si](C)(Cl)CC PDNUHAXBKKDGAM-UHFFFAOYSA-N 0.000 description 1
- AVDUEHWPPXIAEB-UHFFFAOYSA-N chloro-ethyl-dimethylsilane Chemical compound CC[Si](C)(C)Cl AVDUEHWPPXIAEB-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- FJWRGPWPIXAPBJ-UHFFFAOYSA-N diethyl(dimethyl)silane Chemical compound CC[Si](C)(C)CC FJWRGPWPIXAPBJ-UHFFFAOYSA-N 0.000 description 1
- UKAJDOBPPOAZSS-UHFFFAOYSA-N ethyl(trimethyl)silane Chemical compound CC[Si](C)(C)C UKAJDOBPPOAZSS-UHFFFAOYSA-N 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000005055 methyl trichlorosilane Substances 0.000 description 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- VCZQFJFZMMALHB-UHFFFAOYSA-N tetraethylsilane Chemical compound CC[Si](CC)(CC)CC VCZQFJFZMMALHB-UHFFFAOYSA-N 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- ZOYFEXPFPVDYIS-UHFFFAOYSA-N trichloro(ethyl)silane Chemical compound CC[Si](Cl)(Cl)Cl ZOYFEXPFPVDYIS-UHFFFAOYSA-N 0.000 description 1
- JCSVHJQZTMYYFL-UHFFFAOYSA-N triethyl(methyl)silane Chemical compound CC[Si](C)(CC)CC JCSVHJQZTMYYFL-UHFFFAOYSA-N 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/06—Aluminium compounds
- C07F5/061—Aluminium compounds with C-aluminium linkage
- C07F5/062—Al linked exclusively to C
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/06—Aluminium compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
Abstract
Description
Claims (4)
- 트리메틸알루미늄, 트리메틸갈륨, 트리에틸갈륨, 트리에틸알루미늄, 트리메틸인듐, 디메틸아연, 디에틸아연, 비스(시클로펜타디에닐)마그네슘, 비스(메틸시클로펜타디에닐)마그네슘으로 이루어지는 군으로부터 선택되는 유기 금속 화합물로부터 유기 금속 화합물보다 증기압이 높은 불순물을 증류 정제로 제거하는 경우에 있어서, 유기 금속 화합물의 증기 중에 불활성 가스를 유통시키는 것을 특징으로 하는 유기 금속 화합물의 정제 방법.
- 제1항에 있어서, 유기 금속 화합물이 트리메틸알루미늄인 것을 특징으로 하는 유기 금속 화합물의 정제 방법.
- 제1항 또는 제2항에 있어서, 유기 금속 화합물보다 증기압이 높은 불순물이 유기 규소 화합물인 것을 특징으로 하는 유기 금속 화합물의 정제 방법.
- 삭제
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004180971A JP4488186B2 (ja) | 2004-06-18 | 2004-06-18 | トリメチルアルミニウムの精製方法 |
JPJP-P-2004-00180971 | 2004-06-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060048414A KR20060048414A (ko) | 2006-05-18 |
KR100861207B1 true KR100861207B1 (ko) | 2008-09-30 |
Family
ID=35241161
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020050052182A KR100861207B1 (ko) | 2004-06-18 | 2005-06-17 | 유기 금속 화합물의 정제 방법 및 그에 의해 얻어진 유기금속 화합물 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7112691B2 (ko) |
EP (1) | EP1616872B1 (ko) |
JP (1) | JP4488186B2 (ko) |
KR (1) | KR100861207B1 (ko) |
CN (1) | CN1769289B (ko) |
DE (1) | DE602005021726D1 (ko) |
TW (1) | TW200602349A (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4470682B2 (ja) * | 2004-10-13 | 2010-06-02 | 住友化学株式会社 | トリメチルガリウムの製造方法 |
US7659414B2 (en) * | 2007-07-20 | 2010-02-09 | Rohm And Haas Company | Method of preparing organometallic compounds |
EP2545972A1 (en) | 2011-07-13 | 2013-01-16 | Dow Global Technologies LLC | Organometallic compound purification by two steps distillation |
EP2545973B1 (en) | 2011-07-13 | 2020-03-04 | Dow Global Technologies LLC | Organometallic compound purification by stripping step |
EP2559681B1 (en) | 2011-08-15 | 2016-06-22 | Dow Global Technologies LLC | Organometallic compound preparation |
EP2559682B1 (en) | 2011-08-15 | 2016-08-03 | Rohm and Haas Electronic Materials LLC | Organometallic compound preparation |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0116319A2 (en) | 1983-02-09 | 1984-08-22 | Sumitomo Chemical Company, Limited | Process for producing high purity metallic compound |
JPH06145177A (ja) * | 1992-11-09 | 1994-05-24 | Tosoh Akzo Corp | 有機金属化合物の精製法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0176537B1 (en) | 1984-03-26 | 1989-01-25 | The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and | The preparation of metal alkyls |
JPS62132888A (ja) | 1985-12-03 | 1987-06-16 | Sumitomo Chem Co Ltd | 有機金属化合物の精製方法 |
JPS62185090A (ja) | 1986-02-10 | 1987-08-13 | Sumitomo Chem Co Ltd | アルキルガリウムの精製方法 |
US4847399A (en) * | 1987-01-23 | 1989-07-11 | Morton Thiokol, Inc. | Process for preparing or purifying Group III-A organometallic compounds |
JPH0535154A (ja) | 1991-07-29 | 1993-02-12 | Ricoh Co Ltd | 画像形成装置 |
JP3221237B2 (ja) | 1994-06-30 | 2001-10-22 | 住友化学工業株式会社 | 有機金属化合物の精製方法 |
JP2003518007A (ja) | 1999-05-21 | 2003-06-03 | アクゾ ノーベル ナムローゼ フェンノートシャップ | 有機金属化合物の精製 |
GB0017968D0 (en) * | 2000-07-22 | 2000-09-13 | Epichem Ltd | An improved process and apparatus for the isolation of pure,or substantially pure,organometallic compounds |
CN1345726A (zh) * | 2000-09-30 | 2002-04-24 | 阿克佐诺贝尔公司 | 有机金属化合物的纯化 |
JP4150917B2 (ja) * | 2003-06-19 | 2008-09-17 | 信越化学工業株式会社 | トリメチルガリウムの精製方法 |
JP4054997B2 (ja) * | 2003-06-19 | 2008-03-05 | 信越化学工業株式会社 | 高純度アルキルガリウムの製造方法 |
-
2004
- 2004-06-18 JP JP2004180971A patent/JP4488186B2/ja not_active Expired - Lifetime
-
2005
- 2005-06-17 US US11/154,534 patent/US7112691B2/en active Active
- 2005-06-17 TW TW094120282A patent/TW200602349A/zh not_active IP Right Cessation
- 2005-06-17 KR KR1020050052182A patent/KR100861207B1/ko not_active IP Right Cessation
- 2005-06-17 CN CN2005101132865A patent/CN1769289B/zh not_active Expired - Fee Related
- 2005-06-20 EP EP05253799A patent/EP1616872B1/en not_active Expired - Fee Related
- 2005-06-20 DE DE602005021726T patent/DE602005021726D1/de active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0116319A2 (en) | 1983-02-09 | 1984-08-22 | Sumitomo Chemical Company, Limited | Process for producing high purity metallic compound |
JPH06145177A (ja) * | 1992-11-09 | 1994-05-24 | Tosoh Akzo Corp | 有機金属化合物の精製法 |
Also Published As
Publication number | Publication date |
---|---|
EP1616872B1 (en) | 2010-06-09 |
JP4488186B2 (ja) | 2010-06-23 |
TWI333954B (ko) | 2010-12-01 |
KR20060048414A (ko) | 2006-05-18 |
CN1769289B (zh) | 2010-12-15 |
TW200602349A (en) | 2006-01-16 |
EP1616872A2 (en) | 2006-01-18 |
CN1769289A (zh) | 2006-05-10 |
US20050283015A1 (en) | 2005-12-22 |
JP2006001895A (ja) | 2006-01-05 |
US7112691B2 (en) | 2006-09-26 |
EP1616872A3 (en) | 2006-01-25 |
DE602005021726D1 (de) | 2010-07-22 |
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