KR100861200B1 - Photoresist bubble auto removing system - Google Patents

Photoresist bubble auto removing system Download PDF

Info

Publication number
KR100861200B1
KR100861200B1 KR1020070080450A KR20070080450A KR100861200B1 KR 100861200 B1 KR100861200 B1 KR 100861200B1 KR 1020070080450 A KR1020070080450 A KR 1020070080450A KR 20070080450 A KR20070080450 A KR 20070080450A KR 100861200 B1 KR100861200 B1 KR 100861200B1
Authority
KR
South Korea
Prior art keywords
solenoid valve
photoresist
bubble
timer
drain opening
Prior art date
Application number
KR1020070080450A
Other languages
Korean (ko)
Inventor
이재훈
Original Assignee
주식회사 동부하이텍
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 동부하이텍 filed Critical 주식회사 동부하이텍
Priority to KR1020070080450A priority Critical patent/KR100861200B1/en
Application granted granted Critical
Publication of KR100861200B1 publication Critical patent/KR100861200B1/en

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

An automatic photoresist bubble removal system is provided to stabilize a coating process and to enhance productivity by discharging automatically bubbles. A bubble sensor(22a,32) is installed at a supply line in order to sense bubbles. A N2 pressure solenoid valve(35a) and a drain opening solenoid valve(35b) are used for adjusting the amount of air to be supplied. A N2 pressure air operation valve(36) is operated according to the air supplied by opening the N2 pressure solenoid valve. The N2 pressure air operation valve is installed at a hydraulic line to a N2 inlet of a PR bottle in order to adjust the amount of N2 gas. A drain opening air operation valve(38) is operated according to the air supplied by opening the drain opening solenoid valve. The drain opening air operation valve is installed at the supply line in order to adjust an opening state of a drain. A control unit(40) receives a sensing signal of the bubble sensor and controls a voltage applied to the N2 pressure solenoid valve and the drain opening solenoid valve.

Description

Photoresist bubble auto removing system

The present invention relates to an automatic photoresist bubble removal system, and more particularly, by detecting and automatically removing bubbles generated in a photoresist used in a coating process of a semiconductor photo process, which is caused by the presence of bubbles in the photoresist. The present invention relates to an automatic photoresist bubble removal system that stabilizes a process by preventing coating defects and prevents equipment stoppage for bubble removal measures and improves wafer productivity by minimizing work time.

BACKGROUND ART In general, semiconductor devices include a thin film forming process for forming a thin film on a wafer, an ion implantation process for implanting impurity ions into a wafer, a photolithography process for patterning a thin film formed on a wafer, and a plurality of chips formed on a wafer. It is manufactured through a test process for testing and an assembly process for turning the tested wafer into individual chips. In the photolithography process, a photoresist (PR) is used to form a pattern in the manufacturing process, and the photoresist is thinly coated on a wafer to form a pattern through an exposure process.

FIG. 1 is a diagram illustrating a wafer map in which coating defects occur due to air bubbles in a conventional photoresist, and FIG. 2 is a schematic diagram illustrating steps until a conventional photoresist is applied.

When the photoresist passes through many control elements until it is applied to the final wafer 10, bubbles naturally occur. The photoresist is caused by the bubbles when the photoresist is applied or sprayed on the wafer 10. This may cause a flow rate shortage of the wafer 10, thereby reducing the loss or yield of the wafer 10.

In FIG. 1, reference numeral 11 denotes a black portion developed by normal photoresist coating, and reference numeral 12 denotes a portion where the pattern 13 is not developed because the photoresist is discharged less than the set flow rate due to the generation of bubbles.

(A) and (b) are exemplified views of a plan view showing a developed state on the wafer 10, and (c) and (d) are enlarged views of the wafer 10 viewed from the side. As a drawing, the photoresist is normally applied on the upper side of the interface 14 and the pattern 13 is developed. However, the photoresist is not applied normally on the lower side of the interface 14 due to the bubble generation. It is not developed.

Referring to FIG. 2, the photoresist used in the coating process starts with a PR bottle (Photoresist Bottle, 20; 20a, 20b), and a buffer tank (24; 24a, 24b) and a three way valve (3way-valve). , 25), pump 26, filter 27, and Suck-Back Valve 29 are finally applied to wafer 10.

The photoresist in the PR bottle 20 is pushed up by the injection pressure of nitrogen gas into the N2 injection ports 21; 21a, 21b. The buffer tank 24 serves as a primary barrier for preventing the empty liquid from being supplied when all of the photoresist in the PR bottle 20 is exhausted. The buffer tank 24 is used to detect the flow of the empty liquid. Is provided with bubble detection sensors 22a and 22b. In addition, when replacing with a new photoresist, the empty liquid on the supply line is discharged through the drains 23a and 23b by opening the drain valves 22c and 22d. The three-way valve 25 receives the signal detected by the bubble detection sensors 22a and 22b to shorten the replacement time when one photoresist is consumed when two PR bottles 20a and 20b are used. Take the role of switching the photoresist supply line to use the other photoresist. The pump 26 plays a role of discharging a predetermined amount of photoresist for a predetermined time by setting the amount and the discharging time of the photoresist. The filter 27 serves to remove bubbles or fine foreign matter present on the movement path of the photoresist, and is discharged by manual operation through the drain 28 on the upper portion of the filter 27. The back valve 29 is a valve for adjusting the photoresist so that the photoresist does not fall after the discharge by the set amount during the discharge of the photoresist. Thereafter, the photoresist is applied onto the wafer 10 through the injection hole 30.

Conventional photoresist supply system having the above configuration has a bubble detection sensor (22a, 22b) for detecting the generation of bubbles, but when the bubble is detected, the equipment operation is set to stop (Interlock), so Due to this there is a problem that decreases the productivity of the wafer.

The present invention has been made to solve the above problems, the photoresist bubble automatic to detect the bubbles generated in the photoresist during the coating process and automatically remove the bubbles to improve the availability of the equipment and wafer productivity The purpose is to provide a removal system.

Automatic photoresist bubble removal system of the present invention for achieving the above object, the injection port for injecting the photoresist on the wafer from the PR bottle containing the photoresist used in the coating process of the photo process for semiconductor manufacturing A system for removing bubbles generated in a photoresist on a supply line up to a supply, comprising: a bubble detecting sensor provided at one point on the supply line to sense the bubbles; A pair of solenoid valves adapted to regulate the supply of air by applying a voltage according to the detection signal of the bubble detection sensor; An N2 pressurizing air operation valve which is operated by air supplied by the opening of the solenoid valve of one side, and is provided on an inlet line of the PR bottle to the N2 inlet to control the supply of N2 gas; A drain opening air operation valve which is operated by air supplied by the opening of the solenoid valve on the other side, and is provided at a point on the supply line to regulate the opening of the drain to discharge the bubbles; and detecting the bubble detection sensor. And a controller configured to receive a signal and control a voltage applied to the solenoid valve.

The bubble detection sensor is characterized in that for operating the timer by transmitting a detection signal to the timer to apply a voltage to the solenoid valve only for a set time.

The control unit includes a timer relay which is driven for a time set in the timer at the time of communication of the current according to the switching in the bubble detection sensor; A relay switch switched in association with the operation of the timer relay; and a timer switch in which a switching state is changed after a set time of the timer has elapsed, wherein the pair of solenoid valves are switched according to the switching of the relay switch. The operation is controlled.

According to the automatic photoresist bubble removing system according to the present invention, when a bubble existing in the photoresist is detected by the bubble sensor, the pressure of nitrogen gas is applied to the photoresist bubble, and the air operation valve for drain opening is set to a timer. By opening the air bubbles automatically during the opening, there is an advantage of improving the availability of the equipment, stabilizing the coating process, and improving wafer productivity.

Hereinafter, the configuration and operation of the preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

3 is a schematic diagram of an automatic photoresist bubble removing system according to the present invention, and FIG. 4 is a circuit diagram of a controller according to the present invention.

The automatic photoresist bubble removal system of the present invention includes the bubble detection sensor 32 and the control unit 40 as a newly added element while still including the components on the schematic diagram showing the conventional photoresist supplying step shown in FIG. 2. ) And its internal circuit, timer 34, solenoid valves 35a and 35b, and air actuating valves 36 and 38 to detect bubbles generated in the photoresist and automatically discharge the bubbles. .

The bubble detection sensor 32 is installed at a point on the supply line of the photoresist, and compared to the conventional bubble detection sensors 22a and 22b shown in FIG. The same, but it is characterized by performing a function to start the operation of the timer 34 by transmitting a detection signal to the timer 34 to be described later.

The overall operation is that the signal is turned ON when bubbles in the photoresist are first detected by the bubble detection sensor 32, and the solenoid is controlled by a circuit in the control unit 40 for a time set in the timer 34 (for example, 5 seconds). Voltage is applied to the valves 35a and 35b. The solenoid valves 35a and 35b operate the N2 pressurizing air operation valve 36 and the drain opening air operation valve 38. Therefore, when bubbles are detected by the bubble detection sensor 32, the N2 gas is pressurized into the PR bottle 20a, and the drain opening air operation valve 38 is opened to discharge the bubbles to the outside through the drain 28. do. Hereinafter, each component will be described in detail.

In FIG. 3, the bubble detection sensor 32 is shown installed in the line between the pump 26 and the filter 27. As shown in FIG. This is because a predetermined amount of bubbles or fine foreign substances are filtered while the photoresist passes through the filter 27, and thus the photoresist is selected at a point on the line into which the filter 27 flows, and the installation position of the bubble detection sensor 32 is It can also be installed at other points on the resist supply line.

The bubble detection sensor 32 is composed of a light emitting unit for projecting light to the photoresist and a light receiving unit for receiving light by using an optical sensor method, the light projected from the light emitting unit in the normal state in which no bubble is generated in the photoresist When the light reaches the light receiving portion, if bubbles are generated in the photoresist, the light projected from the light emitting portion is refracted by the bubbles and cannot reach the light receiving portion accurately. When the bubble detection sensor 32 detects the bubble generation state and transmits a signal (signal ON state) to the control unit 40, the switch in the bubble detection sensor 32 is turned on, and current flows. At this time, the relay switches 44a, 44b, 44c, and 44d, which interlock with the coils of the timer relay 44, are pulled by the induced electromotive force generated by the current flowing in the timer relay 44 to be switched to the ON state, and the relay Current flows through the switches 44a, 44b, 44c, and 44d. The current communication state can be confirmed from the outside by the operation of the lamp 49 and the buzzer 50.

In the current communication state, the N2 pressurizing solenoid valve 35a and the drain opening solenoid valve 35b are opened to supply air supplied from a predetermined air supply source with the N2 pressurizing solenoid valve 35a and the drain opening solenoid valve 35b. And the air is supplied to the N2 pressurized air actuating valve 36 and the drain opening air actuating valve 38, respectively, so that the N2 pressurized air actuating valve 36 and the drain opening air actuating valve ( As the 38 is operated to open, N2 gas is supplied through the N2 pressurizing air actuation valve 36, and bubbles generated in the photoresist are discharged to the outside through the drain opening air actuation valve 38. Exhausted.

This state does not continue, and after a predetermined time set in the timer 34, the timer switch 46 connected to the timer 34 is turned off to block the flow of current. At this time, the flow of current to the timer relay 44 is also interrupted and the relay switches 44a, 44b, 44c, and 44d are returned to the OFF state as the induced electromotive force is released. Accordingly, the operation of the N2 pressurizing solenoid valve 35a, the N2 pressurizing air operation valve 36, the drain opening solenoid valve 35b and the drain opening air operation valve 38 is stopped.

Although FIG. 3 illustrates an embodiment in which only one PR bottle 20a is used, two may be configured as shown in FIG. 2 as needed. As such, when using only one PR bottle 20a, the three-way valve 25 may be used or an air operated valve may be selectively installed.

It is apparent to those skilled in the art that the present invention is not limited to the above embodiments and can be practiced in various ways without departing from the technical spirit of the present invention. will be.

1 is a view illustrating a wafer map in which coating defects occur due to inflow of bubbles into a conventional photoresist;

2 is a system diagram showing a step until a conventional photoresist is applied;

3 is a schematic diagram having an automatic photoresist bubble removing system according to the present invention;

4 shows an internal circuit diagram of a control unit according to the present invention.

<Explanation of symbols for the main parts of the drawings>

10: wafer 11: normal part

12: defective part 20a, 20b: PR bottle

21a, 21b: N2 inlet 22a, 22b, 32: bubble detection sensor

23a, 23b, 28: drain 24a, 24b: buffer tank

25: 3-way valve 26: pump

27 filter 29 rotten-back valve

30: injection hole 34: timer

35a, 35b: Solenoid Valve 36,38: Air Operated Valve

40: controller 44a, 44b, 44c, 44d: relay switch

44: timer relay 46: timer switch

Claims (3)

In the system for removing bubbles generated in the photoresist on the supply line from the PR bottle containing the photoresist used in the coating process of the photolithography process for semiconductor manufacturing to the injection hole for injecting the photoresist on the wafer , A bubble detection sensor provided at one point on the supply line to detect the bubble; An N2 pressurized solenoid valve and a drain opening solenoid valve configured to adjust a supply of air by applying a voltage according to a detection signal of the bubble detection sensor; An N2 pressurizing air actuating valve operated by air supplied by opening of the N2 pressurizing solenoid valve and provided at a point on an inlet line of the PR bottle to an N2 inlet to regulate supply of N2 gas; A drain opening air operation valve operated by air supplied by opening of the drain opening solenoid valve and provided at a point on the supply line to control the opening of the drain to discharge bubbles; and And a controller configured to control the voltage applied to the N2 pressurizing solenoid valve and the drain opening solenoid valve by receiving the detection signal of the bubble detection sensor. The method of claim 1, wherein the bubble sensor is characterized in that for operating the timer by transmitting a detection signal to the timer so that the voltage is applied to the N2 pressure solenoid valve and the drain opening solenoid valve for a set time. Automatic photoresist bubble removal system. 3. The apparatus of claim 2, wherein the control unit comprises: a timer relay driven for a time set in the timer at the time of communicating the current according to the switching in the bubble detection sensor; A relay switch switched in association with the operation of the timer relay; and And a timer switch in which a switching state is changed after a set time of the timer. The operation of the N2 pressurized solenoid valve and the drain opening solenoid valve is controlled according to the switching of the relay switch. Photoresist bubble automatic removal system.
KR1020070080450A 2007-08-10 2007-08-10 Photoresist bubble auto removing system KR100861200B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020070080450A KR100861200B1 (en) 2007-08-10 2007-08-10 Photoresist bubble auto removing system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070080450A KR100861200B1 (en) 2007-08-10 2007-08-10 Photoresist bubble auto removing system

Publications (1)

Publication Number Publication Date
KR100861200B1 true KR100861200B1 (en) 2008-09-30

Family

ID=40023982

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070080450A KR100861200B1 (en) 2007-08-10 2007-08-10 Photoresist bubble auto removing system

Country Status (1)

Country Link
KR (1) KR100861200B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113042308A (en) * 2020-12-11 2021-06-29 苏州特瑞特机器人有限公司 Two-component glue dispensing device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050068959A (en) * 2003-12-30 2005-07-05 동부아남반도체 주식회사 Automatic drain device of photo resist bubble
KR20060073147A (en) * 2004-12-24 2006-06-28 동부일렉트로닉스 주식회사 Apparatus for removing bubbles for a photo resist supply system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050068959A (en) * 2003-12-30 2005-07-05 동부아남반도체 주식회사 Automatic drain device of photo resist bubble
KR20060073147A (en) * 2004-12-24 2006-06-28 동부일렉트로닉스 주식회사 Apparatus for removing bubbles for a photo resist supply system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113042308A (en) * 2020-12-11 2021-06-29 苏州特瑞特机器人有限公司 Two-component glue dispensing device

Similar Documents

Publication Publication Date Title
US7237581B2 (en) Apparatus and method of dispensing photosensitive solution in semiconductor device fabrication equipment
KR20000056254A (en) Apparatus for dispensing photoresister on semiconductor device
KR100610023B1 (en) Device for controlling dispense error of photo spinner equipment
KR100861200B1 (en) Photoresist bubble auto removing system
KR100558546B1 (en) Photo resist supply device
KR100518555B1 (en) Photoresist supply apparatus for preventing photoresist flow to a drain line
KR100848782B1 (en) N2 gas controlling system for photoresist changing process
KR100281179B1 (en) Photoresist supply device for semiconductor device manufacturing and photoresist supply method
KR20020074835A (en) apparatus of supplying photoresist for manufacturing semiconductor
KR100699118B1 (en) Photoresist supplying system of track coater and controlling method
KR20020083375A (en) photoresist supply apparatus and method for suppling photoresist using the same
KR100921725B1 (en) Method of controlling a pumping system
KR200141180Y1 (en) Apparatus for removing bubble in semiconductor developing apparatus
KR100666467B1 (en) Wafer coater woth bubble removing apparatus
KR200153640Y1 (en) Photoresist supplying apparatus
KR100990878B1 (en) Barc photo resist drain device and drain method of a semiconductor photo equipment
KR100706219B1 (en) A spinner apparatus for a semiconductor device fabrication
KR20070107226A (en) Apparatus and method for dispensing photosensitive solution in semiconductor device fabrication equipment
KR20050013687A (en) System of supplying photoresist
KR20060035825A (en) Apparatus for supplying photo resist having automatic air removing function and method thereof
KR20060078950A (en) Purge system of photo resist filter and the method thereof
KR20060073147A (en) Apparatus for removing bubbles for a photo resist supply system
CN112513518A (en) Particle monitoring device and method for chemical solution
KR20230031539A (en) Photoresist Drain Device System for Semiconductor Photo Equipment
KR100861834B1 (en) Apparatus for auto cleaning a di-water control system and method thereof

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee