KR100846337B1 - 노광방법 및 노광장치 - Google Patents

노광방법 및 노광장치 Download PDF

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Publication number
KR100846337B1
KR100846337B1 KR1020000057268A KR20000057268A KR100846337B1 KR 100846337 B1 KR100846337 B1 KR 100846337B1 KR 1020000057268 A KR1020000057268 A KR 1020000057268A KR 20000057268 A KR20000057268 A KR 20000057268A KR 100846337 B1 KR100846337 B1 KR 100846337B1
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KR
South Korea
Prior art keywords
optical system
substrate
projection
exposure
exposure light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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KR1020000057268A
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English (en)
Korean (ko)
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KR20010039943A (ko
Inventor
쓰찌야마꼬또
나라게이
Original Assignee
가부시키가이샤 니콘
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Publication of KR20010039943A publication Critical patent/KR20010039943A/ko
Application granted granted Critical
Publication of KR100846337B1 publication Critical patent/KR100846337B1/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020000057268A 1999-10-01 2000-09-29 노광방법 및 노광장치 Expired - Lifetime KR100846337B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP28211499 1999-10-01
JP99-282114 1999-10-01
JP2000-269288 2000-09-05
JP2000269288A JP4649717B2 (ja) 1999-10-01 2000-09-05 露光方法及び露光装置、デバイス製造方法

Publications (2)

Publication Number Publication Date
KR20010039943A KR20010039943A (ko) 2001-05-15
KR100846337B1 true KR100846337B1 (ko) 2008-07-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000057268A Expired - Lifetime KR100846337B1 (ko) 1999-10-01 2000-09-29 노광방법 및 노광장치

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Country Link
JP (1) JP4649717B2 (https=)
KR (1) KR100846337B1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4362999B2 (ja) * 2001-11-12 2009-11-11 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
JP2003295459A (ja) * 2002-04-02 2003-10-15 Nikon Corp 露光装置及び露光方法
JP2004335953A (ja) * 2002-11-25 2004-11-25 Nikon Corp 露光装置及び露光方法
JP4496711B2 (ja) * 2003-03-31 2010-07-07 株式会社ニコン 露光装置及び露光方法
US20050088664A1 (en) * 2003-10-27 2005-04-28 Lars Stiblert Method for writing a pattern on a surface intended for use in exposure equipment and for measuring the physical properties of the surface
JP4806581B2 (ja) * 2005-03-28 2011-11-02 富士フイルム株式会社 光量調整方法、画像記録方法及び装置
EP2003506A2 (en) * 2006-03-20 2008-12-17 Nikon Corporation Reflective, refractive and projecting optical system; reflective, refractive and projecting device; scanning exposure device; and method of manufacturing micro device
US8013977B2 (en) * 2006-07-17 2011-09-06 Asml Netherlands B.V. Lithographic apparatus, radiation sensor and method of manufacturing a radiation sensor
JP5354803B2 (ja) * 2010-06-28 2013-11-27 株式会社ブイ・テクノロジー 露光装置
US9488811B2 (en) * 2013-08-20 2016-11-08 Ultratech, Inc. Wynne-Dyson optical system with variable magnification
JP6661371B2 (ja) * 2015-12-25 2020-03-11 キヤノン株式会社 評価方法、露光方法、および物品の製造方法
WO2018168993A1 (ja) * 2017-03-17 2018-09-20 株式会社ニコン 照明装置及び方法、露光装置及び方法、並びにデバイス製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100416327B1 (ko) * 1993-11-11 2004-04-17 가부시키가이샤 니콘 주사형노광장치및노광방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0654751B2 (ja) * 1987-10-27 1994-07-20 キヤノン株式会社 焦点検出方法
JP2580668B2 (ja) * 1988-01-21 1997-02-12 株式会社ニコン 露光方法、露光条件測定方法及ぴパターン測定方法
JP3230094B2 (ja) * 1991-09-02 2001-11-19 株式会社ニコン 投影光学系の光学特性測定方法、光学特性測定装置、露光方法及びマスク
JP3287017B2 (ja) * 1992-07-10 2002-05-27 株式会社ニコン 結像特性の測定方法
JP3152776B2 (ja) * 1992-12-25 2001-04-03 宮崎沖電気株式会社 ホトリソグラフィーの露光量算出方法
JP3376688B2 (ja) * 1993-10-06 2003-02-10 株式会社ニコン 露光装置、及び該装置を用いた露光方法
JP3339149B2 (ja) * 1993-12-08 2002-10-28 株式会社ニコン 走査型露光装置ならびに露光方法
JP3460129B2 (ja) * 1994-08-16 2003-10-27 株式会社ニコン 露光装置および露光方法
JP3550597B2 (ja) * 1995-06-02 2004-08-04 株式会社ニコン 露光装置
JP3791037B2 (ja) * 1996-02-28 2006-06-28 株式会社ニコン 露光装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100416327B1 (ko) * 1993-11-11 2004-04-17 가부시키가이샤 니콘 주사형노광장치및노광방법

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Publication number Publication date
JP4649717B2 (ja) 2011-03-16
JP2001166497A (ja) 2001-06-22
KR20010039943A (ko) 2001-05-15

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