KR100837912B1 - 홀 효과 센서 - Google Patents

홀 효과 센서 Download PDF

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Publication number
KR100837912B1
KR100837912B1 KR1020037002703A KR20037002703A KR100837912B1 KR 100837912 B1 KR100837912 B1 KR 100837912B1 KR 1020037002703 A KR1020037002703 A KR 1020037002703A KR 20037002703 A KR20037002703 A KR 20037002703A KR 100837912 B1 KR100837912 B1 KR 100837912B1
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KR
South Korea
Prior art keywords
active layer
layer
substrate
hall effect
effect sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020037002703A
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English (en)
Korean (ko)
Other versions
KR20030045042A (ko
Inventor
쟝-루이 로베르
쥴리앙 베르노
쟝 까마셀
실비 꽁트레라
Original Assignee
상뜨르 나쇼날 드 라 러쉐르쉬 샹띠피끄 (쎄엔알에스)
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Publication date
Application filed by 상뜨르 나쇼날 드 라 러쉐르쉬 샹띠피끄 (쎄엔알에스) filed Critical 상뜨르 나쇼날 드 라 러쉐르쉬 샹띠피끄 (쎄엔알에스)
Publication of KR20030045042A publication Critical patent/KR20030045042A/ko
Application granted granted Critical
Publication of KR100837912B1 publication Critical patent/KR100837912B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Fluid Pressure (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Window Of Vehicle (AREA)
  • Measuring Magnetic Variables (AREA)
  • Push-Button Switches (AREA)
  • Switches That Are Operated By Magnetic Or Electric Fields (AREA)
  • Electrophonic Musical Instruments (AREA)
KR1020037002703A 2000-08-30 2001-08-30 홀 효과 센서 Expired - Fee Related KR100837912B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0011087A FR2813443B1 (fr) 2000-08-30 2000-08-30 Capteur a effet hall
FR00/11087 2000-08-30
PCT/FR2001/002703 WO2002019442A1 (fr) 2000-08-30 2001-08-30 Capteur a effet hall

Publications (2)

Publication Number Publication Date
KR20030045042A KR20030045042A (ko) 2003-06-09
KR100837912B1 true KR100837912B1 (ko) 2008-06-13

Family

ID=8853827

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020037002703A Expired - Fee Related KR100837912B1 (ko) 2000-08-30 2001-08-30 홀 효과 센서

Country Status (15)

Country Link
US (1) US6734514B2 (https=)
EP (1) EP1314211B1 (https=)
JP (1) JP5049449B2 (https=)
KR (1) KR100837912B1 (https=)
AT (1) ATE327574T1 (https=)
AU (2) AU8779101A (https=)
CA (1) CA2421077C (https=)
CY (1) CY1105327T1 (https=)
DE (1) DE60119937T2 (https=)
DK (1) DK1314211T3 (https=)
ES (1) ES2265440T3 (https=)
FR (1) FR2813443B1 (https=)
PT (1) PT1314211E (https=)
WO (1) WO2002019442A1 (https=)
ZA (1) ZA200301625B (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6879012B2 (en) * 2002-06-21 2005-04-12 The Regents Of The University Of California Giant planar hall effect in epitaxial ferromagnetic semiconductor devices
JP4980052B2 (ja) * 2004-05-17 2012-07-18 エルジー・ケム・リミテッド 電極及びその製造方法
KR100821630B1 (ko) 2004-05-17 2008-04-16 주식회사 엘지화학 전극 및 이의 제조방법
JP2009502583A (ja) * 2005-08-05 2009-01-29 フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． 多孔質膜およびそれを含む記録媒体
ATE427156T1 (de) * 2005-08-05 2009-04-15 Fujifilm Mfg Europe Bv Poríse membran und aufzeichnungsmedium sowie herstellungsverfahren dafur
EP1924341A1 (en) * 2005-08-05 2008-05-28 FUJIFILM Manufacturing Europe B.V. Porous membrane and recording medium comprising same
EP1924342A1 (en) * 2005-08-05 2008-05-28 FUJIFILM Manufacturing Europe B.V. Porous membrane and recording medium comprising same
JP2009503227A (ja) * 2005-08-05 2009-01-29 フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． 多孔質膜及びそれを用いた記録媒体
JP2009503224A (ja) * 2005-08-05 2009-01-29 フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． 多孔質膜とこれを含む記録媒体
US9588134B2 (en) * 2012-05-10 2017-03-07 Infineon Technologies Ag Increased dynamic range sensor
US9362485B2 (en) 2013-03-14 2016-06-07 Robert Bosch Gmbh Vertical hall effect sensor with offset reduction using depletion regions
KR102116147B1 (ko) * 2014-03-06 2020-05-28 매그나칩 반도체 유한회사 매립형 마그네틱 센서
US11605778B2 (en) 2019-02-07 2023-03-14 Lake Shore Cryotronics, Inc. Hall effect sensor with low offset and high level of stability
GB2644272A (en) * 2024-09-17 2026-04-01 Univ Warwick Magnetic field sensor
CN120063335B (zh) * 2025-02-17 2025-10-03 安徽大学 一种基于室温平面霍尔效应的角度传感器件及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4315273A (en) * 1978-11-24 1982-02-09 Victor Company Of Japan, Limited Compound semiconductor Hall effect element
EP0045846A1 (en) * 1980-08-08 1982-02-17 Ae Plc Automatic speed control system
US5536953A (en) * 1994-03-08 1996-07-16 Kobe Steel Usa Wide bandgap semiconductor device including lightly doped active region

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2884707B2 (ja) * 1990-05-21 1999-04-19 住友電気工業株式会社 ホール素子
JP3214505B2 (ja) * 1991-09-13 2001-10-02 株式会社デンソー 半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4315273A (en) * 1978-11-24 1982-02-09 Victor Company Of Japan, Limited Compound semiconductor Hall effect element
EP0045846A1 (en) * 1980-08-08 1982-02-17 Ae Plc Automatic speed control system
US5536953A (en) * 1994-03-08 1996-07-16 Kobe Steel Usa Wide bandgap semiconductor device including lightly doped active region

Also Published As

Publication number Publication date
FR2813443A1 (fr) 2002-03-01
FR2813443B1 (fr) 2003-01-03
CA2421077C (fr) 2011-10-04
WO2002019442A1 (fr) 2002-03-07
CA2421077A1 (fr) 2002-03-07
AU8779101A (en) 2002-03-13
KR20030045042A (ko) 2003-06-09
DK1314211T3 (da) 2006-09-25
DE60119937D1 (de) 2006-06-29
JP2004508721A (ja) 2004-03-18
AU2001287791B2 (en) 2006-04-27
ZA200301625B (en) 2004-02-27
CY1105327T1 (el) 2010-03-03
JP5049449B2 (ja) 2012-10-17
ES2265440T3 (es) 2007-02-16
DE60119937T2 (de) 2007-01-11
EP1314211A1 (fr) 2003-05-28
US6734514B2 (en) 2004-05-11
PT1314211E (pt) 2006-10-31
EP1314211B1 (fr) 2006-05-24
ATE327574T1 (de) 2006-06-15
US20030164530A1 (en) 2003-09-04

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