KR100829708B1 - Liquid crystal display and fabrication method thereof - Google Patents

Abstract

A liquid crystal display device according to the present invention comprises: a substrate; A crystalline semiconductor film formed on the substrate and having a source / drain region and a channel region; A gate insulating film formed on the substrate and the crystalline semiconductor film; A gate electrode formed on the gate insulating film and formed over a channel region of the crystalline semiconductor film; An interlayer insulating film formed on the gate insulating film and the gate electrode; A source / drain electrode formed on the interlayer insulating film and electrically connected to the drain electrode through via holes formed in the interlayer insulating film and the gate insulating film over the source / drain region; An etch stopper provided on the interlayer insulating film and formed in the pixel area displaying an image; A passivation layer formed on the interlayer insulating layer, the source / drain electrodes and the etch stopper, and having an embossed shape in a region where the etch stopper is provided; And a reflection surface electrically connected to the drain electrode and formed on an embossed protective film of the pixel region. It includes.

In addition, according to the present invention, the etch stopper is formed of the same material as the material forming the source / drain electrodes.

In addition, according to the present invention, the etch stopper is patterned according to the embossed protective film shape provided in the pixel area, and is formed corresponding to the position of the recessed area of the protective film.

Description

Liquid crystal display and manufacturing method thereof

1 is a schematic plan view of a conventional reflective liquid crystal display device;

FIG. 2 is a schematic cross-sectional view of a thin film transistor region of a reflective LCD according to A-A of FIG. 1;

3 is a schematic view showing a reflective surface forming process of a conventional reflective liquid crystal display device;

4 is a view conceptually showing a shape of a reflective surface formed in a pixel area of a conventional reflective liquid crystal display device;

5 is a schematic plan view of a reflective liquid crystal display device employing a polycrystalline thin film transistor according to the present invention.

FIG. 6 is a schematic cross-sectional view of a thin film transistor region of a reflective LCD according to BB of FIG. 5;

7 is a schematic cross-sectional view of a manufacturing process of a reflective liquid crystal display device employing a polycrystalline thin film transistor according to the present invention.

8 is a view for explaining a spatial arrangement of an etch stopper and an embossing hole in a reflective liquid crystal display device employing a polycrystalline thin film transistor according to the present invention.                 

9 is a view showing various shapes of an etch stopper formed in the manufacturing process of a reflective liquid crystal display device employing a polycrystalline thin film transistor according to the present invention.

10 is a view conceptually showing the shape of a reflective surface formed in a pixel region of a reflective liquid crystal display device employing a polycrystalline thin film transistor according to the present invention;

11 is a view showing another embodiment of a reflective liquid crystal display device employing a polycrystalline thin film transistor according to the present invention.

12 is a conceptual view showing a plan view of a transflective liquid crystal display device employing a polycrystalline thin film transistor according to the present invention.

13 is a schematic plan view of a reflective liquid crystal display device employing an amorphous thin film transistor according to the present invention;

FIG. 14 is a schematic cross-sectional view of the reflective liquid crystal display device taken along the line D-D of FIG. 13; FIG.

15 is a schematic cross-sectional view of a manufacturing process of a reflective liquid crystal display device employing an amorphous thin film transistor according to the present invention.

16 is a schematic plan view of a transflective liquid crystal display device employing an amorphous thin film transistor according to the present invention.

<Explanation of symbols for the main parts of the drawings>

510, 1210, 1310, 1610 ... data line

520, 1220, 1320, 1620 ... gate line

530, 1330 ... pixel area                 

540, 630, 1140, 1240, 1340, 1401, 1640 ... gate electrode

550, 651, 1161, 1250, 1350, 1405, 1650 ... source electrode

560, 652, 1162, 1260, 1360, 1406, 1660 ... drain electrode

600, 1100, 1400 ... Substrate 610, 1120 ... Crystalline semiconductor film

611, 1121 ... low concentration impurity doping region

612, 1122 ... high concentration impurity doping region

620, 1130, 1402 ... gate insulating film

640, 1150 ... interlayer insulation film

660, 840, 1170, 1407 ... etch stopper

670, 1180 ... First Shield 680, 1185 ... Second Shield

690, 1190, 1230, 1409, 1630 ... reflecting surface

710, 810, 1510 ... Photoresist Film

720, 820, 1520 ... Contact Hole Formation Holes

730, 830, 1530 ... Embossing forming holes

1110 ... Buffer layer 1141, 1163, 1164, 1171 ... Mo film

1270, 1670 ... transparent pixel area 1403 ... semiconductor layer

1404 ... impurity semiconductor layer 1408 ... protective film

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display (LCD), and particularly to a reflective liquid crystal display device or a semi-transmissive liquid crystal display device having a reflective surface, and easily forming a reflective surface having an uneven structure for increasing light efficiency. The present invention relates to a liquid crystal display device and a method of manufacturing the same.

In general, CRT (or CRT: Cathode Ray Tube) has been the most used screen display device for displaying image information on the screen, which is inconvenient to use because it is bulky and heavy compared to the display area. Followed.

As a result, a thin film type flat panel display device having a small display area that can be easily installed and used in any place has been developed, and has gradually replaced the CRT display device. In particular, TFT-LCD (Thin Film Transistor Liquid Crystal Display) has superior display resolution than other flat panel display devices and exhibits a faster response speed than the CRT when implementing a moving image. .

Briefly referring to the operation of the TFT-LCD, if any pixel is switched by the thin film transistor, the switched arbitrary pixel can adjust the light transmittance of the lower light source.

The switching device is mainly composed of an amorphous silicon thin film transistor (a-Si: H TFT) in which a semiconductor layer is formed of amorphous silicon. This is because the amorphous silicon thin film can be formed at a low temperature on a large insulating substrate such as a low-cost glass substrate.

In general, a liquid crystal display device uses a method of displaying an image by light emitted from a light source called a backlight located under the panel. However, liquid crystal displays are very inefficient light modulators that transmit only 3-8% of the light incident by the backlight. In more detail, the transmittance of the two polarizing plates provided on the upper plate and the lower plate is 45%, the transmittance of the two glass sheets of the lower plate and the upper plate is 94%, the transmittance of the TFT array and the pixel is about 65%, and the transmittance of the color filter. Assuming 27%, the light transmittance of the overall liquid crystal display is about 7.4%.

As described above, since the amount of light actually displaying the image through the LCD is only about 7% of the light emitted from the backlight, the brightness of the backlight should be brighter in the LCD having high brightness. Power consumption by the backlight is generated a lot. Therefore, when a liquid crystal display device is employed in a portable device such as a laptop or a mobile communication terminal, the capacity of the power supply device must be increased in order to supply sufficient backlight power, but a battery having a large weight has been used. However, in the case of using the battery as described above, the weight of a portable device (for example, a notebook, a mobile communication terminal) is much weighted, and there is a problem in that it cannot be used for a long time in terms of use time and can only be used in a limited manner.

In view of this, various studies have been conducted on reflective liquid crystal display devices that do not use backlight light. Because the reflective liquid crystal display operates using natural light without a backlight, it is possible to use it in a portable state for a long time due to the effect of greatly reducing the amount of power consumed in the backlight, and the aperture ratio is also superior to that of the conventional backlight type liquid crystal display. There is an advantage.

That is, the reflective liquid crystal display device reflects external light by using a material having an opaque reflective characteristic in the pixel portion formed of the transparent electrode in the conventional liquid crystal display device.

On the other hand, in general, the environment in which the user uses such a reflective liquid crystal display device does not always exist natural light or artificial light source. That is, the reflective liquid crystal display device may be used in an office or a building in which daylight is present in natural light or external artificial light is present, but the reflective reflective liquid crystal display device may be used in a dark environment in which natural light does not exist. You cannot use it.

Therefore, recently, a transflective liquid crystal display device using a combination of advantages of a reflective liquid crystal display device using natural light and a transmissive liquid crystal display device using backlight light has been researched and developed.

Next, a structure and a manufacturing process of a conventional reflective liquid crystal display device will be described with reference to FIGS. 1 and 2. 1 is a schematic plan view of a conventional reflective liquid crystal display device, and FIG. 2 is a schematic cross-sectional view of a thin film transistor region of a liquid crystal display device cut along the line A-A of FIG. 1. Here, only the lower substrate including the thin film transistor and the pixel region is illustrated, and the illustration is based on the case where the polycrystalline thin film transistor is employed.

Referring to FIGS. 1 and 2, a plurality of data for applying a data signal to the source electrodes 150 and 251 on a substrate 200 such as glass in a lower substrate of a conventional reflective liquid crystal display device. A line 110 and a plurality of gate lines 120 for applying a gate signal to the gate electrodes 140 and 230 cross each other in a matrix form. The area provided by the intersection of the data line 110 and the gate line 120 becomes the pixel area 130 for displaying an image. In the reflective liquid crystal display, the reflective surface 290 is formed on the pixel area. Is formed.

Next, an example of a manufacturing process for forming a polycrystalline thin film transistor and a reflective surface having such a structure will be briefly described.

First, an amorphous semiconductor film (for example, amorphous silicon) is deposited on a substrate 200 such as glass. Then, crystallization is performed on the amorphous semiconductor film through a method such as annealing using a laser, and predetermined patterning is performed on the crystallized semiconductor film.

Thereafter, a gate insulating film 220 having a predetermined thickness is formed on the substrate 200 and the patterned crystalline semiconductor films 210, 211, and 212. In this case, an inorganic insulating film such as SiNx or SiOx is used as the gate insulating film 220. In addition, a gate electrode 230 is further formed at a predetermined position on the gate insulating layer 220 (corresponding to the position of the formation crystal semiconductor film 210). Here, AlNd may be used as the gate electrode 230, and may be formed by a deposition and patterning process through a general semiconductor process.

In this state, lightly doped impurities are formed on the gate insulating layer 220 to form a lightly doped drain (LDD) region using the gate electrode 230 as a mask. In this case, by adjusting the thickness of the gate electrode 230 and the implantation conditions of low concentration impurities, the gate electrode 230 corresponds to an area where the gate electrode 230 is not formed so that the gate electrode 230 may serve as a mask. Low concentration impurities are doped into the crystalline semiconductor film 211 at the position (LDD region formation).

A photoresist film (not shown) is formed around the gate electrode 230 by using a general semiconductor process, and a high concentration of impurities for forming the source / drain regions 212 are doped. Thereafter, the photoresist film (not shown) is removed to form a crystalline semiconductor film 210, a gate insulating film 220, and a source / drain region 212 and an LDD region 211 formed on the substrate 200. The gate electrode 230 can be formed.

After the source / drain region 212 and the LDD region 211 are formed in this manner, an interlayer 240 is formed as a whole. In addition, after the via holes are formed in the interlayer insulating film 240 and the gate insulating film 220, the source electrode 251 and the drain electrode 252 are formed to form a polycrystalline thin film transistor. .

In addition, in order to display an image in the reflective liquid crystal display, a pixel electrode serving as a reflective surface must be additionally formed. To this end, first, a passivation layer is formed on the source / drain electrodes 251 and 252 and the interlayer insulating layer 240 of the thin film transistor. The passivation layer may be formed by laminating a first passivation layer 260 made of a material such as SiNx and a second passivation layer 265 made of a material such as BCB.                         

In addition, in order to efficiently reflect light from the reflective surface, it is preferable to form the reflective surface with a curved concave-convex shape. An example of the reflective surface forming process will be described with reference to FIG. 3. 3 is a view conceptually illustrating a reflective surface forming process of a conventional reflective liquid crystal display device.

Referring to FIG. 3, first, a photosensitive resin film (for example, a polymer resin) 270 for forming a curved (embossed) surface on the second passivation film 265 may be spin coated or roll coated. It is formed using (see Fig. 3 (a)).

And as shown in FIG.3 (b), after blocking the said photosensitive resin film 270 with the mask 300 in which the some hole A and B are formed, the ultraviolet-ray (arrow of drawing) from upper side is shown. Investigate Subsequently, when the developing process is performed, as shown in FIG. 3C, the shapes of the plurality of holes formed in the mask 300 correspond to the shapes of the plurality of holes and have different shapes on the second passivation layer 265. A plurality of photosensitive resin film 270 block portions are formed.

Thereafter, the plurality of photosensitive resin films 270 may be softened by heat treatment, thereby forming a curved shape as illustrated in FIG. 3D, wherein the photosensitive resin films 270 may have different heights. It can be implemented to have. As shown in FIG. 3E, an overcoat layer 280 that is a protective film is formed on the photosensitive resin film 270 by using a polymer resin or the like.

In addition, the first and second passivation layers 260 and 265 and the overcoat layer 280 are penetrated on the drain electrode 252 by a photoresist film coating / exposure / development and etching process by a general semiconductor process. To form a contact hole. Subsequently, the reflective electrode 290 is formed on the overcoat layer 280 using a material having good reflective properties such as aluminum, aluminum alloy, or silver to display an image.

Accordingly, the reflective electrode 290 is electrically connected to the drain electrode 252 through the contact hole, and can perform an operation for displaying an image according to the driving of the thin film transistor.

4 is a diagram conceptually illustrating a shape of a reflective surface formed in a pixel area of a conventional reflective liquid crystal display device. That is, as shown in FIG. 4, by forming the shape of the reflective surface into an uneven shape, it is possible to efficiently use the light reflected from the reflective surface.

By the way, in the case of forming the reflective surface through the manufacturing process as described above, there is a disadvantage that the process is delayed as the processing steps of the manufacturing process are increased, and the manufacturing cost is high.

The present invention provides a liquid crystal display device having a reflective surface or a transflective liquid crystal display device, which can easily form a reflective surface having an uneven structure for increasing light efficiency, and a method of manufacturing the same. There is a purpose.

In order to achieve the above object, the liquid crystal display device according to the present invention,                     

A substrate;

A crystalline semiconductor film formed on the substrate and having a source / drain region and a channel region;

A gate insulating film formed on the substrate and the crystalline semiconductor film;

A gate electrode formed on the gate insulating film and formed over a channel region of the crystalline semiconductor film;

An interlayer insulating film formed on the gate insulating film and the gate electrode;

A source / drain electrode formed on the interlayer insulating film and electrically connected to the drain electrode through via holes formed in the interlayer insulating film and the gate insulating film over the source / drain region;

An etch stopper provided on the interlayer insulating film and formed in the pixel area displaying an image;

A passivation layer formed on the interlayer insulating layer, the source / drain electrodes and the etch stopper, and having an embossed shape in a region where the etch stopper is provided; And

A reflective surface electrically connected to the drain electrode and formed on an embossed protective film of the pixel region; Its features are to include.

According to the present invention, the etch stopper is characterized in that it is formed of the same material as the material forming the source / drain electrodes.

Further, according to the present invention, the etch stopper is patterned according to the embossed protective film shape provided in the pixel region, and is characterized in that it is formed corresponding to the position of the recessed area of the protective film.

According to the present invention, the etch stopper is characterized in that it is formed over the entire pixel region.

In addition, according to the present invention, the protective film is characterized by being formed of a non-photosensitive material.

Further, according to the present invention, the protective film is characterized in that it is an organic insulating film.

In addition, according to the present invention, the reflective surface is characterized in that the aluminum or aluminum alloy is formed by deposition.

In addition, another embodiment of the liquid crystal display device according to the present invention in order to achieve the above object,

A substrate;

A crystalline semiconductor film provided on the substrate and provided with a source / drain region and a channel region;

A gate insulating film formed on the substrate and the crystalline semiconductor film;

A gate electrode formed on the gate insulating film and formed over a channel region of the patterned crystalline semiconductor film;

An interlayer insulating film formed on the gate insulating film and the gate electrode;

A source / drain electrode formed on the interlayer insulating film and electrically connected to the drain electrode through via holes formed in the interlayer insulating film and the gate insulating film over the source / drain region;                     

An etch stopper provided on the interlayer insulating film and formed in a partial region of the pixel region for displaying an image;

A protective film formed on the interlayer insulating film, the source / drain electrodes and the etch stopper, and having an embossed shape in a region where the etch stopper is provided;

A reflective surface electrically connected to the drain electrode and formed on an embossed protective film provided in a portion of the pixel region; And

A transparent electrode electrically connected to the drain electrode and formed in an area of the pixel area where an embossed protective film is not provided; Its features are to include.

According to the present invention, the transparent electrode is formed at the center of the pixel region, and the reflective surface is formed around the transparent electrode of the pixel region.

In addition, the manufacturing method of the liquid crystal display device according to the present invention in order to achieve the above object,

Forming a crystalline semiconductor film on the substrate;

Forming a gate insulating film on the substrate and the crystalline semiconductor film;

Forming a gate electrode on the gate insulating layer, and forming a gate electrode on the formation crystal semiconductor film;

Forming a source / drain region and a channel region in the crystalline semiconductor film;

Forming an interlayer insulating film on the gate electrode and the gate insulating film;                     

A pixel region in which a via hole is formed in the interlayer insulating film and the gate insulating film provided on the source / drain region, and a source electrode and a drain electrode material are deposited to form a source electrode and a drain electrode, and an image is displayed. Forming an etch stopper using the source / drain electrode material;

Forming a protective film on the etch stopper, the source / drain electrodes and the interlayer insulating film;

Forming a photoresist film on the protective film, and forming a hole for forming a contact hole and a plurality of holes for forming an embossed hole in the photoresist film;

Performing dry etching on the photoresist film to form a contact hole on the drain electrode, and forming a plurality of embossed protective films on the pixel region; And

Depositing a reflective surface on the contact hole and the embossed protective layer on the drain electrode; Its features are to include.

According to the present invention, the etch stopper is patterned according to the shape of the protective film of the embossed shape provided in the pixel area, and is characterized in that it is formed corresponding to the position of the recessed area of the protective film.

According to the present invention, the etch stopper is characterized in that it is formed over the entire pixel region.

In addition, according to the present invention, the protective film is characterized by being formed of a non-photosensitive material.                     

Further, according to the present invention, the protective film is characterized in that it is an organic insulating film.

In addition, according to the present invention, the reflective surface is characterized in that the aluminum or aluminum alloy is formed by deposition.

In addition, another embodiment of the manufacturing method of the liquid crystal display device according to the present invention in order to achieve the above object,

Forming a crystalline semiconductor film on the substrate;

Forming a gate insulating film on the substrate and the crystalline semiconductor film;

Forming a gate electrode on the gate insulating layer, and forming a gate electrode on the formation crystal semiconductor film;

Forming a source / drain region and a channel region in the crystalline semiconductor film;

Forming an interlayer insulating film on the gate electrode and the gate insulating film;

A pixel region in which a via hole is formed in the interlayer insulating film and the gate insulating film provided on the source / drain area, and a source electrode and a drain electrode material are deposited to form a source electrode and a drain electrode, and an image is displayed. Forming an etch stopper using the source / drain electrode material;

Forming a protective film on the etch stopper, the source / drain electrodes and the interlayer insulating film;

Forming a photoresist film on the passivation layer, forming a hole for contact hole through exposure to the photoresist film, and forming a plurality of thin photoresist film regions for forming embossed holes using diffraction exposure; Steps;                     

Performing dry etching on the photoresist film to form a contact hole on the drain electrode, and forming a plurality of embossed protective films on the pixel region; And

Depositing a reflective surface on the contact hole and the embossed protective layer on the drain electrode; Its features are to include.

According to the present invention, the etch stopper is patterned according to the shape of the protective film of the embossed shape provided in the pixel area, and is characterized in that it is formed corresponding to the position of the recessed area of the protective film.

Further, according to the present invention, the etch stopper is characterized in that it is formed over the entire pixel region.

In addition, another embodiment of the liquid crystal display device according to the present invention in order to achieve the above object,

A substrate;

A gate electrode formed on the substrate;

A gate insulating film formed on the substrate and the gate electrode;

A semiconductor layer provided on the gate insulating layer and formed on the gate electrode;

A source / drain electrode formed over the semiconductor layer;

An etch stopper provided on the gate insulating film and formed in the pixel area displaying the image;                     

A passivation layer formed on the source / drain electrode, the gate insulating layer, and the etch stopper, and having an embossed shape in a region where the etch stopper is provided; And

A reflective surface electrically connected to the drain electrode and formed on an embossed protective film of the pixel region; Its features are to include.

According to the present invention, the etch stopper is characterized in that it is formed of the same material as the material forming the source / drain electrodes.

Further, according to the present invention, the etch stopper is patterned according to the shape of the protective film of the embossed shape provided in the pixel area, and is characterized in that it is formed corresponding to the position of the recessed area of the protective film.

According to the present invention, the etch stopper is characterized in that it is formed over the entire pixel region.

In addition, according to the present invention, the protective film is characterized in that it is formed of a non-photosensitive material.

Further, according to the present invention, the protective film is characterized in that it is an organic insulating film.

In addition, according to the present invention, the reflective surface is characterized in that the aluminum or aluminum alloy is formed by deposition.

In addition, another embodiment of the liquid crystal display device according to the present invention in order to achieve the above object,

A substrate;

A gate electrode formed on the substrate;                     

A gate insulating film formed on the substrate and the gate electrode;

A semiconductor layer provided on the gate insulating layer and formed on the gate electrode;

A source / drain electrode formed over the semiconductor layer;

An etch stopper provided on the gate insulating film and formed in a partial region of the pixel region for displaying an image;

A protective film formed on the source / drain electrode, the gate insulating film, and the etch stopper, and having an embossed shape in a region where the etch stopper is provided;

A reflective surface electrically connected to the drain electrode and formed on an embossed protective film provided in a portion of the pixel region; And

A transparent electrode electrically connected to the drain electrode and formed in an area of the pixel area where an embossed protective film is not provided; Its features are to include.

According to the present invention, the transparent electrode is formed at the center of the pixel region, and the reflective surface is formed around the transparent electrode of the pixel region.

In addition, to achieve the above object another embodiment of the liquid crystal display device manufacturing method according to the present invention,

Forming a gate electrode on the substrate, and forming a gate insulating film on the gate electrode;                     

Forming a semiconductor layer over the gate insulating film;

Forming a source / drain electrode on the semiconductor layer and forming an etch stopper in the pixel region using the same material forming the source / drain electrode;

Forming a passivation layer on the gate insulating layer, the source / drain electrode and the etch stopper;

Forming a photoresist film on the protective film, and forming a hole for forming a contact hole and a plurality of holes for forming an embossed hole in the photoresist film;

Performing dry etching on the photoresist film to form a contact hole on the drain electrode, and forming a plurality of embossed protective films on the pixel region; And

Depositing a reflective surface on the contact hole and the embossed protective layer on the drain electrode; Its features are to include.

According to the present invention, the etch stopper is patterned according to the shape of the protective film of the embossed shape provided in the pixel area, and is characterized in that it is formed corresponding to the position of the recessed area of the protective film.

According to the present invention, the etch stopper is characterized in that it is formed over the entire pixel region.

In addition, according to the present invention, the protective film is characterized by being formed of a non-photosensitive material.                     

Further, according to the present invention, the protective film is characterized in that it is an organic insulating film.

In addition, according to the present invention, the reflective surface is characterized in that the aluminum or aluminum alloy is formed by deposition.

In addition, to achieve the above object another embodiment of the liquid crystal display device manufacturing method according to the present invention,

Forming a gate electrode on the substrate, and forming a gate insulating film on the gate electrode;

Forming a semiconductor layer over the gate insulating film;

Forming a source / drain electrode on the semiconductor layer and forming an etch stopper in the pixel region using the same material forming the source / drain electrode;

Forming a passivation layer on the gate insulating layer, the source / drain electrode and the etch stopper;

Forming a photoresist film on the passivation layer, forming a hole for contact hole through exposure to the photoresist film, and forming a plurality of thin photoresist film regions for forming embossed holes using diffraction exposure; Steps;

Performing dry etching on the photoresist film to form a contact hole on the drain electrode, and forming a plurality of embossed protective films on the pixel region; And

Depositing a reflective surface on the contact hole and the embossed protective layer on the drain electrode; Its features are to include.

According to the present invention, the etch stopper is patterned according to the shape of the protective film of the embossed shape provided in the pixel area, and is characterized in that it is formed corresponding to the position of the recessed area of the protective film.

According to the present invention, the etch stopper is characterized in that it is formed over the entire pixel region.

According to the present invention, in the reflective liquid crystal display device or the semi-transmissive liquid crystal display device provided with a reflective surface, in forming the reflective surface of the concave-convex structure for increasing the light efficiency, the protective surface of the embossed shape when forming the contact hole By simultaneously forming the process can be simplified, there is an advantage that can reduce the manufacturing cost.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 5 is a schematic plan view of a reflective liquid crystal display device employing a polycrystalline thin film transistor according to the present invention, and FIG. 6 is a cross-sectional view of a thin film transistor region of a reflective liquid crystal display device cut in accordance with BB of FIG. 5. It is a schematic drawing. Here, only the lower substrate including the thin film transistor and the pixel region is illustrated, and the illustration is based on the case where the polycrystalline thin film transistor is employed.

5 and 6, in the lower substrate of the reflective LCD according to the present invention, a plurality of data signals are applied to the source electrodes 550 and 651 on a substrate 600 such as glass. The data line 510 and the plurality of gate lines 520 for applying a gate signal to the gate electrodes 540 and 630 are formed to cross each other in a matrix form. In addition, an area provided by the intersection of the data line 510 and the gate line 520 becomes a pixel area 530 for displaying an image. In the reflective liquid crystal display, the reflective surface 690 is formed on the pixel area. ) Is formed.

Next, a manufacturing process for forming the polycrystalline thin film transistor and the reflective surface having such a structure will be described in detail with reference to FIGS. 6 and 7. 7 is a schematic cross-sectional view of a manufacturing process of a reflective liquid crystal display device employing a polycrystalline thin film transistor according to the present invention.

First, an amorphous semiconductor film (for example, amorphous silicon) is deposited on a substrate 600 such as glass. Then, crystallization is performed on the amorphous semiconductor film through a method such as annealing using a laser, and predetermined patterning is performed on the crystallized semiconductor film.

Thereafter, a gate insulating layer 620 having a predetermined thickness is formed on the substrate 600 and the patterned crystalline semiconductor layers 610, 611, and 612. In this case, an inorganic insulating film such as SiNx or SiOx is frequently used as the gate insulating film 620. In addition, a gate electrode 630 is further formed at a predetermined position on the gate insulating layer 620 (corresponding to a position of the formation crystal semiconductor layer 610). Here, AlNd may be used as the gate electrode 630 and may be formed by a deposition and patterning process through a general semiconductor process.

In this state, lightly doped impurities for forming a lightly doped drain (LDD) region are doped on the gate insulating layer 620 using the gate electrode 630 as a mask. In this case, by adjusting the thickness of the gate electrode 630 and the implantation conditions of low concentration impurities, the gate electrode 630 corresponds to a region where the gate electrode 630 is not formed so that the gate electrode 630 may serve as a mask. Low concentration impurities are doped in the crystalline semiconductor film 611 at the position (LDD region formation).

Then, a photoresist film (not shown) is formed around the gate electrode 630 using a general semiconductor process, and a high concentration of impurities for forming the source / drain regions 612 are doped. Thereafter, the photoresist film (not shown) is removed to form a crystalline semiconductor film 610, a gate insulating film 620, and a source / drain region 612 and an LDD region 611 formed on the substrate 600. The gate electrode 630 can be formed (see FIG. 7A).

After the source / drain region 612 and the LDD region 611 are formed in this manner, an interlayer 640 is formed as a whole. In this case, a material such as SiNx may be used as the interlayer insulating layer 640. Subsequently, after a via hole is formed in the interlayer insulating film 640 and the gate insulating film 620 through a photoresist film coating / exposure / development and etching process by a general semiconductor process, the source electrode 651 is formed. By forming the over and drain electrodes 652, the polycrystalline thin film transistor can be formed.

Here, a material such as AlNd may be used as the source electrode 651 and the drain electrode 652. At this time, in the process of forming the source electrode 651 and the drain electrode 652, an etch stopper 660 in the pixel region using the same material forming the source / drain electrodes 651 and 652. ) Is formed (see FIG. 7B).

Such an etch stopper 660 is formed at a predetermined position (corresponding to the bent shape of the reflective surface 690) in order to limit the etching progression in the process of forming the reflective surface 690 in the pixel region to be described later. As formed, the shape and function of the etch stopper 660 will be described later.

On the other hand, after the source / drain electrodes 651 and 652 and the etch stopper 660 are formed, a protective film is formed on the upper portion using a non-photosensitive material (for example, an organic insulating film). In this case, the protective film may be formed by laminating a first protective film 670 formed of an inorganic insulating material such as SiNx and a second protective film 680 formed of an organic insulating material such as BCB.

Subsequently, as shown in FIG. 7C, in preparing a photoresist film 710 for forming a contact hole on the drain electrode 652 through an etching process, the photoresist film ( A plurality of embossing forming holes 730 for forming a reflective surface 690 having a concave-convex surface along with a hole 720 for forming a contact hole in the 710 (hereinafter referred to as a 'first hole'). ) (Hereinafter referred to as 'second hole').

Here, the second hole 730 formed in the photoresist film 710 is formed to correspond to the upper portion of the position where the etch stopper 660 is provided. An example of such a spatial arrangement between the first hole 720 for forming the contact hole and the second hole 730 for forming the embossing and the etch stopper 660 is illustrated in FIG. 8. FIG. 8A illustrates a position where the first hole 820 and the second hole 830 are formed in the photoresist film 810 on the pixel region, and (b) shows an etch stopper 840 in the pixel region. It shows the position formed.

That is, since the second hole 830 for forming the embossing is formed on the etch stopper 840, dry etching is performed in the region where the second hole 830 is formed in the etching process to be described later. In this case, the etching may be prevented from proceeding below the layer on which the etch stopper 840 is formed.

Meanwhile, dry etching is performed on the photoresist layers 710 and 810 in which the first hole 820 for forming the contact hole and the second hole 830 for forming the embossing are formed. Accordingly, in the region where the first holes 720 and 820 for forming the contact hole are formed, etching is performed on the first passivation layer 670 and the second passivation layer 680 on the drain electrode 652. The drain electrode 652 is exposed.

In addition, the first protective layer 670 and the second protective layer 680 are etched under the region where the second holes 730 and 830 for embossing are formed, and the second portion of the pixel region is etched. A curved surface (embossing surface) is formed on the protective film 680. In this case, since the etch stoppers 660 and 840 are formed below the second holes 730 and 830, etching may be prevented from proceeding below the etch stoppers 660 and 840. It is possible to make the embossed surface formation by etching the second protective film 680 uniform.

Subsequently, the reflective surface 690 is deposited by using a material having good reflective properties such as aluminum, an aluminum alloy, or silver on the contact hole region and the embossed region formed in the etching process. As a result, the reflective surface 690 is electrically connected to the drain electrode 652 through a contact hole, and may perform an operation for displaying an image according to the driving of the thin film transistor (FIG. 7D). ) Reference).

Meanwhile, the shapes of the etch stoppers 660 and 840 formed in the interlayer insulating layer 640 of the pixel region when the source / drain electrodes 651 and 652 are formed may be variously modified as shown in FIG. 9. have. That is, the shape of the etch stopper 840 may be patterned in consideration of the formation position of the embossed surface as shown in FIG. 9 (a), and is uniformly deposited on the entire pixel region without patterning as shown in (b). It may be formed. As such, the shape of the etch stopper 840 may be variously modified according to the conditions of the etching process and the design conditions of the liquid crystal display.

Through this manufacturing process, it is possible to form the lower substrate of the reflective liquid crystal display device with a reflective surface according to the present invention, the shape of the reflective surface is formed as shown in FIG. FIG. 10 is a view conceptually illustrating a shape of a reflective surface formed in a pixel area of a reflective liquid crystal display device employing a polycrystalline thin film transistor according to the present invention. That is, as shown in FIG. 10, by forming the shape of the reflective surface into a concave-convex shape, it is possible to efficiently use the light reflected from the reflective surface.

In the process of forming the contact hole and the embossed surface with reference to FIG. 7C, the first photoresist layer 710 is formed on the photoresist layer 710 formed on the second passivation layer 680. The case where the hole 720 and the plurality of second holes 730 for embossing are provided is described. However, depending on the process conditions, instead of forming the second hole 730 for forming the embossing, a diffraction exposure is used instead of forming a hole completely bored in the corresponding region of the photoresist film 710. As a result, the photoresist film 710 may be thinly formed with a predetermined thickness remaining.

That is, in performing exposure to the photoresist film 710 using a mask, complete exposure is performed in the first hole 720 region for forming contact holes, and slits are formed in the region for embossing formation. The photoresist film 710 can be formed to a predetermined thickness by adjusting the exposure amount using a mask. Accordingly, the embossing surface can be effectively formed by adjusting the speed of etching of the contact hole forming region and the speed of etching of the embossing surface forming region.

11 is a view showing another embodiment of a reflective liquid crystal display device employing a polycrystalline thin film transistor according to the present invention.

Referring to FIG. 11, the reflective liquid crystal display device employing the polycrystalline thin film transistor according to the present invention includes a substrate 1100 such as glass; A buffer layer 1110 formed on the substrate 1100 and formed of a material such as SiO ₂ to prevent the influence of impurities through the substrate 1100; A source / drain region 1122 on the buffer layer 1110 and doped with a high concentration of impurity ions (eg, n ⁺ ), and a LDD region 1121 and a high concentration of impurity ions doped so that the high concentration of impurity ions have a continuous concentration change A crystalline semiconductor film 1120 such as polycrystalline silicon having the undoped channel region; It includes.

In addition, a reflective liquid crystal display device employing a polycrystalline thin film transistor according to the present invention includes a gate insulating film 1130 formed on the crystalline semiconductor film 1120 and formed of a material such as SiNx or SiO ₂ ; A gate electrode 1140 formed on the gate insulating film 1130 and formed by depositing a material such as AlNd on the crystalline semiconductor film 1120; An interlayer insulating film 1150 formed of a material such as SiNx on the gate insulating film 1130 and the gate electrode 1140; And via holes formed in the interlayer insulating layer 1150 and the gate insulating layer 1130 on the source / drain regions, and are electrically connected to the drain electrode 1162 and made of a material such as AlNd on the interlayer insulating layer 1150. Formed source / drain electrodes 1161 and 1162; It includes.

In addition, a reflective liquid crystal display device employing a polycrystalline thin film transistor according to the present invention includes an etch stopper 1170 formed in a pixel region using the same material when the source / drain electrodes 1161 and 1162 are formed; A first passivation layer 1180 formed of an inorganic insulating material such as SiNx on the source / drain electrodes 1161 and 1162 and the etch stopper 1170; A second passivation layer 1185 formed of an organic insulating material such as BCB on the first passivation layer 1180; And a reflective surface 1185 formed by depositing on the second passivation layer 1185 in an embossed form. It includes.

Here, the gate electrode 1140, the source / drain electrodes 1161, 1162 and the etch stopper 1170 may be formed of a material such as AlNd, and as illustrated in FIG. 11, each electrode 1140 ( The Mo films 1141, 1163, 1164 and 1171 may be further formed on the upper portions of the 1161 and 1162 and the etch stopper 1170 by using a material such as Mo.

On the other hand, the reflective surface formed by the method of manufacturing the liquid crystal display device according to the present invention can be applied not only to the reflective liquid crystal display device but also to the transflective liquid crystal display device, and FIG. 12 conceptually shows an application example thereof. 12 is a conceptual view illustrating a plan view of a transflective liquid crystal display device employing a polycrystalline thin film transistor according to the present invention.

Referring to FIG. 12, the lower substrate of the transflective liquid crystal display according to the present invention includes a plurality of data lines 1210 for applying a data signal to the source electrode 1250 on a substrate (not shown) such as glass. ) And a plurality of gate lines 1220 for applying a gate signal to the gate electrode 1240 are formed to intersect in a matrix form. The area provided by the intersection of the data line 1210 and the gate line 1220 becomes a pixel area for displaying an image, and in the transflective liquid crystal display, the reflective surface 1230 for displaying an image in the pixel area is displayed. ) And the transparent pixel region 1270 are formed.

In this case, the reflective surface 1230 serves to reflect light incident from the upper portion of the liquid crystal display, and the transparent pixel region 1270 transmits light emitted from a backlight provided under the liquid crystal display. It will play a role. 12 illustrates a case in which the transparent pixel region 1270 is formed in the reflective surface 1230, but the reflective surface 1230 and the transparent pixel region 1270 may be formed according to the design of the liquid crystal display device. The relative position may vary.                     

12, a variety of methods are already known for the method of manufacturing the transflective liquid crystal display device including the reflective surface 1230 and the transparent pixel region 1270, and thus, a detailed description thereof will be provided herein. It will be omitted. However, in the present invention, as described above with reference to FIGS. 5 to 11, in forming a reflective surface having a curved surface, an etch stopper is simultaneously formed in the reflective surface forming region when the source / drain electrodes are formed. In the etching process of forming the contact hole, the curved surface may be simultaneously formed in the reflective surface area.

In addition, the above description has been given of the reflective and semi-transmissive liquid crystal display devices formed based on the polycrystalline thin film transistor, but the reflective surface formed by the method of manufacturing the liquid crystal display device according to the present invention is formed based on the amorphous thin film transistor. The present invention may be applied to reflective and transflective liquid crystal displays. Hereinafter, a brief description will be made of a case in which the reflective / transflective liquid crystal display device based on the amorphous thin film transistor is applied.

First, FIG. 13 is a schematic plan view of a reflective liquid crystal display device employing an amorphous thin film transistor according to the present invention, and FIG. 14 is a schematic cross-sectional view of the reflective liquid crystal display device cut according to DD of FIG. 13. The figure shown. Here, only the lower substrate including the thin film transistor and the pixel region is illustrated, and is illustrated based on the case where the amorphous thin film transistor is employed.

Referring to FIGS. 13 and 14, the reflective liquid crystal display device employing the amorphous thin film transistor according to the present invention provides a data signal to the source electrodes 1350 and 1405 on a substrate 1400 such as glass. A plurality of data lines 1310 to be applied and a plurality of gate lines 1320 for applying a gate signal to the gate electrodes 1340 and 1401 are formed to cross each other in a matrix form. The area provided by the intersection of the data line 1310 and the gate line 1320 is a pixel area 1330 for displaying an image. In the reflective liquid crystal display, the reflective surface 1409 is disposed on the pixel area. Is formed.

Next, a manufacturing process for forming the amorphous thin film transistor and the reflective surface having such a structure will be briefly described with reference to FIGS. 14 and 15. FIG. 15 is a schematic cross-sectional view of a manufacturing process of a reflective liquid crystal display device employing an amorphous thin film transistor according to the present invention. Here, only the lower substrate including the thin film transistor and the pixel region is illustrated, and is illustrated based on the case where the amorphous thin film transistor is employed.

First, through a general semiconductor manufacturing process, a gate electrode 1401 is formed on a substrate 1400, and a gate insulating film 1402 such as silicon oxide (SiO ₂ ) or silicon nitride (SiNx) is formed on the gate electrode 1401. Lamination is formed.

A semiconductor layer 1403 such as a-Si: H, an impurity semiconductor layer 1404 such as n ⁺ , and a source / drain electrode 1405 and 1406 are sequentially stacked on the gate insulating layer 1402. At this time, in the process of forming the source electrode 1405 and the drain electrode 1406, an etch stopper 1407 in the pixel region using the same material forming the source / drain electrodes 1405 and 1406. ) Is formed (see FIG. 15A).

Such an etch stopper 1407 is formed at a predetermined position (corresponding to the curved shape of the reflecting surface 1409) in order to limit the etching progression in the process of forming the reflecting surface 1409 in the pixel region to be described later. It is formed.

In addition, a passivation layer 1408 is formed on the source / drain electrodes 1405 and 1406 and the etch stopper 1407 by using a non-photosensitive material (eg, an organic insulating layer). Subsequently, as shown in FIG. 15B, in preparing a photoresist film 1510 for forming a contact hole on the drain electrode 1406 through an etching process, the photoresist film ( A plurality of embossing forming holes 1530 for forming a reflective surface 1409 having an uneven surface, together with a hole 1520 for forming a contact hole in the 1510 (hereinafter referred to as a 'first hole'). ) (Hereinafter referred to as 'second hole'). Here, the second hole 1530 formed in the photoresist film 1510 is formed to correspond to the upper portion of the position where the etch stopper 1407 is provided.

That is, since the second hole 1530 for embossing is formed on the etch stopper 1407, dry etching is performed in the region where the second hole 1530 is formed in the etching process to be described later. In this case, the etching may be prevented from proceeding below the layer on which the etch stopper 1407 is formed.

On the other hand, dry etching is performed on the photoresist film 1510 in which the first hole 1520 for forming the contact hole and the second hole 1530 for forming the embossing are formed. Accordingly, in the region where the first hole 1520 for forming the contact hole is formed, etching of the passivation layer 1480 on the drain electrode 1406 is performed to expose the drain electrode 1406.

In addition, under the region where the second hole 1530 for embossing is formed, etching of the passivation layer 1408 is performed and a curved surface (embossing surface) is formed on the passivation layer 1408 of the pixel region. do. In this case, since an etch stopper 1407 is formed below the second hole 1530, etching may be prevented from proceeding below the etch stopper 1407, and also by etching of the protective layer 1408. Embossing face formation can be made uniform.

Thereafter, the reflective surface 1409 is deposited on the contact hole region and the embossed region formed by the etching process by using a material having good reflective properties such as aluminum, an aluminum alloy, or silver. As a result, the reflective surface 1409 is electrically connected to the drain electrode 1406 through a contact hole, and may perform an operation for displaying an image according to the driving of the thin film transistor (FIG. 15C). ) Reference).

Meanwhile, when the source / drain electrodes 1405 and 1406 are formed, the shape of the etch stopper 1407 formed in the gate insulating film 1402 of the pixel region may be variously modified. In other words, the shape of the etch stopper 1407 may be patterned in consideration of the formation position of the embossed surface as shown in FIG. 9 (a), and uniform in the entire pixel region without patterning as shown in FIG. 9 (b). It may be formed to be deposited. As such, the shape of the etch stopper 1407 may be variously modified according to the conditions of the etching process and the design conditions of the liquid crystal display.

In addition, in the above-described process of forming the contact hole and the embossing surface with reference to FIG. 15B, in the photoresist film 1510 formed on the passivation layer 1408, the first hole for forming the contact hole is described. The case where the hole 1520 and the plurality of second holes 1530 for embossing are provided is described. However, depending on the process conditions, instead of forming the second hole 1530 for embossing, a diffraction exposure is used instead of forming a hole that is completely bored in the corresponding region of the photoresist film 1510. The photoresist film 1510 may be thinly formed with a predetermined thickness remaining. Accordingly, the embossing surface can be effectively formed by adjusting the speed of etching of the contact hole forming region and the speed of etching of the embossing surface forming region.

That is, in performing exposure to the photoresist film 1510 using a mask, complete exposure is performed on an area of the first hole 1520 for forming a contact hole, and a slit is formed on an area for embossing. By adjusting the exposure amount using a mask, the photoresist film 1510 can be formed to a predetermined thickness.

On the other hand, the reflective surface formed by the manufacturing method of the liquid crystal display device according to the present invention can be applied to the transflective liquid crystal display device as well as the reflective liquid crystal display device, Figure 16 conceptually shows an application example. FIG. 16 conceptually illustrates a top view of a transflective liquid crystal display device employing an amorphous thin film transistor according to the present invention.

Referring to FIG. 16, the lower substrate of the transflective liquid crystal display according to the present invention includes a plurality of data lines 1610 for applying a data signal to the source electrode 1650 on a substrate (not shown) such as glass. ) And a plurality of gate lines 1620 for applying a gate signal to the gate electrode 1640 are formed to intersect in a matrix form. The area provided by the intersection of the data line 1610 and the gate line 1620 becomes a pixel area for displaying an image, and in the transflective liquid crystal display, the reflective surface 1630 for displaying an image in the pixel area is displayed. ) And the transparent pixel region 1670 are formed.

In this case, the reflective surface 1630 serves to reflect light incident from the upper portion of the liquid crystal display, and the transparent pixel region 1670 transmits light emitted from the backlight provided under the liquid crystal display. It will play a role. In FIG. 16, the transparent pixel region 1670 is formed in the reflective surface 1630. However, the reflective surface 1630 and the transparent pixel region 1670 may be formed according to the design of the liquid crystal display device. The relative position may vary.

Since a method of manufacturing a transflective liquid crystal display device having a reflective surface 1630 and a transparent pixel region 1670 as shown in FIG. 16 is already known, a detailed description thereof will be provided herein. It will be omitted. However, in the present invention, as described above with reference to FIGS. 13 to 15, in forming the reflective surface having the curved surface, an etch stopper is simultaneously formed in the reflective surface forming region when the source / drain electrodes are formed. In the etching process of forming the contact hole, the curved surface may be simultaneously formed in the reflective surface area.

As described above, according to the liquid crystal display device and the manufacturing method thereof according to the present invention, in the reflective liquid crystal display device or semi-transmissive liquid crystal display device having a reflective surface, a reflective surface having an uneven structure for increasing the light efficiency is formed. In this case, by forming the embossed protective surface at the time of forming the contact hole, the process can be simplified, and manufacturing costs can be reduced.

Claims (22)

A substrate; A crystalline semiconductor film formed on the substrate and having a source / drain region and a channel region; A gate insulating film formed on the substrate and the crystalline semiconductor film; A gate electrode formed on the gate insulating film and formed over a channel region of the crystalline semiconductor film; An interlayer insulating film formed on the gate insulating film and the gate electrode; A source / drain electrode formed on the interlayer insulating film and electrically connected to the drain electrode through via holes formed in the interlayer insulating film and the gate insulating film over the source / drain region; An etch stopper provided on the interlayer insulating film and formed in the pixel area displaying an image; A passivation layer formed on the interlayer insulating layer, the source / drain electrodes and the etch stopper, and having an embossed shape in a region where the etch stopper is provided; And A reflective surface electrically connected to the drain electrode and formed on an embossed protective film of the pixel region; Liquid crystal display comprising a. The method of claim 1, The etch stopper is formed of the same material as the material forming the source / drain electrode. The method of claim 1, And the etch stopper is patterned according to an embossed protective film shape provided in the pixel region, and formed to correspond to the position of the recessed area of the protective film. The method of claim 1, And the passivation layer is formed of a non-photosensitive material. The method of claim 1, And the protective film is an organic insulating film. The method of claim 1, The reflective surface is a liquid crystal display, characterized in that formed by depositing aluminum or aluminum alloy The method of claim 1, A transparent electrode electrically connected to the drain electrode and formed in an area of the pixel area in which an embossed protective film is not provided; Liquid crystal display device further comprising. The method of claim 7, wherein And the transparent electrode is formed at the center of the pixel region, and a reflective surface is formed around the transparent electrode of the pixel region. Forming a crystalline semiconductor film on the substrate; Forming a gate insulating film on the substrate and the crystalline semiconductor film; Forming a gate electrode on the gate insulating layer, and forming a gate electrode on the formation crystal semiconductor film; Forming a source / drain region and a channel region in the crystalline semiconductor film; Forming an interlayer insulating film on the gate electrode and the gate insulating film; A pixel region in which a via hole is formed in the interlayer insulating film and the gate insulating film provided on the source / drain area, and a source electrode and a drain electrode material are deposited to form a source electrode and a drain electrode, and an image is displayed. Forming an etch stopper using the source / drain electrode material; Forming a protective film on the etch stopper, the source / drain electrodes and the interlayer insulating film; Forming a photoresist film on the passivation film, and performing patterning on the photoresist film to form contact holes and emboss holes through exposure; Performing dry etching on the patterned photoresist film to form a contact hole on the drain electrode, and forming a plurality of embossed protective films on the pixel region; And Depositing a reflective surface on the contact hole and the embossed protective layer on the drain electrode; Method of manufacturing a liquid crystal display device comprising a. The method of claim 9, The etch stopper is patterned according to an embossed protective film shape provided in the pixel area, and is formed corresponding to the position of the recessed area of the protective film. The method of claim 9, And the protective film is formed of a non-photosensitive material. The method of claim 9, The protective film is a method of manufacturing a liquid crystal display device, characterized in that the organic insulating film. The method of claim 9, In forming a photoresist film on the passivation layer and performing patterning on the photoresist film to form contact holes and embossed holes through exposure, the photoresist film in the contact hole forming region penetrates and the photo of the embossing hole forming region. And a part of the resist film is left. The method of claim 13, In the patterning of the photoresist film, the method of manufacturing a liquid crystal display device, characterized in that for patterning the photoresist film using a diffraction exposure. A substrate; A gate electrode formed on the substrate; A gate insulating film formed on the substrate and the gate electrode; A semiconductor layer provided on the gate insulating layer and formed on the gate electrode; A source / drain electrode formed over the semiconductor layer; An etch stopper provided on the gate insulating film and formed in the pixel area displaying the image; A passivation layer formed on the source / drain electrode, the gate insulating layer, and the etch stopper, and having an embossed shape in a region where the etch stopper is provided; And A reflective surface electrically connected to the drain electrode and formed on an embossed protective film of the pixel region; Liquid crystal display comprising a. The method of claim 15, The etch stopper is formed of the same material as the material forming the source / drain electrode. The method of claim 15, And the etch stopper is patterned according to an embossed protective film shape provided in the pixel region, and formed to correspond to the position of the recessed area of the protective film. The method of claim 15, And the passivation layer is formed of a non-photosensitive material. The method of claim 15, And the protective film is an organic insulating film. The method of claim 15, The reflective surface is a liquid crystal display, characterized in that formed by depositing aluminum or aluminum alloy. The method of claim 15, A transparent electrode electrically connected to the drain electrode and formed in an area of the pixel area where an embossed protective film is not provided; Liquid crystal display device further comprising. The method of claim 21, And the transparent electrode is formed at the center of the pixel region, and a reflective surface is formed around the transparent electrode of the pixel region.

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