KR100661825B1 - Array substrate of transflective liquid crystal display device and method for fabricating the same - Google Patents

Array substrate of transflective liquid crystal display device and method for fabricating the same Download PDF

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Publication number
KR100661825B1
KR100661825B1 KR19990063250A KR19990063250A KR100661825B1 KR 100661825 B1 KR100661825 B1 KR 100661825B1 KR 19990063250 A KR19990063250 A KR 19990063250A KR 19990063250 A KR19990063250 A KR 19990063250A KR 100661825 B1 KR100661825 B1 KR 100661825B1
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South Korea
Prior art keywords
electrode
substrate
drain
liquid crystal
crystal display
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KR19990063250A
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Korean (ko)
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KR20010060808A (en
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박상철
정재영
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엘지.필립스 엘시디 주식회사
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    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553Reflecting elements
    • G02F1/133555Transflectors
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136227Through-hole connection of the pixel electrode to the active element through an insulation layer

Abstract

The present invention provides a reflective transmissive liquid crystal display device capable of combining a reflective liquid crystal display device and a transmissive liquid crystal display device, comprising: a substrate having a switching area and a pixel area defined therein; A reflection plate formed on the entire surface of the substrate and having a transmission hole formed in a portion of the pixel region; A first protective film formed over the entire surface of the reflecting plate; A gate electrode formed in the switching region on the first passivation layer on the reflecting plate; A gate insulating film covering an entire surface of the gate electrode and the substrate; An active layer formed on the gate insulating layer on the gate electrode and having a channel formed thereon; Source and drain electrodes in contact with the active layer and spaced apart from the channel, respectively; A second passivation layer formed over the entire surface of the source and drain electrodes and the substrate and having a drain contact hole exposing a portion of the drain electrode; and a drain electrode formed on the second passivation layer and exposed through the drain contact hole. An array substrate of a reflective transmissive liquid crystal display device including a pixel electrode in contact with the substrate is disclosed.

Description

Array substrate of transflective liquid crystal display device and method for fabricating the same

1 is a graph showing the transmittance of each layer of light emitted from the backlight.

2 is a plan view showing a portion corresponding to one pixel of a conventional reflective liquid crystal display.

3 is a cross-sectional view showing a cross section corresponding to one pixel portion of a conventional reflective liquid crystal display device;

4 is a plan view illustrating a plane corresponding to one pixel portion of a conventional reflective transmissive liquid crystal display device;

Figures 5a to 5d is a process chart showing the manufacturing process of the cross section taken by the cutting line V-V of FIG.

6 is a view for explaining the operation of the reflective liquid crystal display device.

FIG. 7 is an enlarged view of a portion A of FIG. 6; FIG.

8 is a plan view of a transflective liquid crystal display device according to an exemplary embodiment of the present invention.

9A to 9D are process diagrams illustrating a fabrication process of a cross section taken along the cut line VIII-VIII of FIG. 8.

<Explanation of symbols for main parts of drawing>

 150: gate wiring 152: gate electrode

 160: data wiring 162: source electrode

 164: drain electrode 166: drain contact hole

 168 pixel electrode 154 through hole

 156: reflector 170: first protective film

 172: gate insulating film 174: active layer

 176: second protective film CH: channel

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to a reflective and transflective liquid crystal display device having a high aperture ratio and a high reflection efficiency.

Recently, as the information society has progressed rapidly, a display field for processing and displaying a large amount of information has been developed.

Until modern times, cathode ray tube (CRT) has been the mainstream of display devices and has been developing.

However, in recent years, the need for a flat panel display has emerged in order to meet the era of thinning, light weight, and low power consumption. Accordingly, a thin film transistor-liquid crystal display device (hereinafter referred to as TFT-LCD) having excellent color reproducibility has been developed.

Looking at the operation of the TFT-LCD, if any pixel is switched by the thin film transistor, the switched arbitrary pixel can transmit the light of the lower light source.

The switching element is mainly composed of an amorphous silicon thin film transistor (a-Si: H TFT) in which a semiconductor layer is formed of amorphous silicon. This is because the amorphous silicon thin film can be formed at a low temperature on a large insulating substrate such as a low-cost glass substrate.

Commonly used TFT-LCDs have used a method of representing an image by the light of a light source called a backlight located under the panel.

However, TFT-LCDs are very inefficient light modulators that transmit only 3-8% of the light incident by the backlight.

The light transmittance of the TFT-LCD is about assuming that the transmittance of the two polarized light is 45%, the transmittance of the two glass plates of the lower plate and the upper plate is 94%, the transmittance of the TFT array and pixel is about 65%, and the transmittance other than the color filter is 27%. 7.4%.

1 is a diagram schematically illustrating transmittance of each layer of light emitted from a backlight.

As described above, since the amount of light actually seen through the TFT-LCD is about 7% of the light generated in the backlight, the brightness of the backlight should be bright in the high brightness TFT-LCD, and the power consumption by the backlight is large.

Therefore, in order to supply sufficient backlight power, a battery having a large weight has been used by increasing the capacity of the power supply device. However, this too could not be used for a long time.

In order to solve the above problem, a reflective TFT-LCD which does not use backlight light has recently been studied. Since it operates by using natural light, it can save the power consumption of the backlight, so it can be used in the portable state for a long time. Since the whole pixel part becomes the opening, the aperture ratio is also higher than that of the conventional backlight TFT-LCD. great.

Hereinafter, a reflective TFT-LCD will be described with reference to the accompanying drawings.

A general TFT-LCD is composed of a thin film transistor array substrate called a lower substrate, a color filter substrate called an upper substrate, and the like. The following description relates to a thin film transistor array substrate as a lower substrate.

First, referring to FIG. 2, which is a plan view corresponding to one pixel of the conventional reflective TFT-LCD 100, the N-th gate wiring 8 and the N-1 th gate wiring ( 6) is located, and the M-th data line 2 and the M + 1-th data line 4 arranged in a column form a matrix.

The gate electrode 18 is positioned at a predetermined position of the Nth gate line 8, and the source electrode 12 overlaps the gate electrode 18 with a predetermined length on the Mth data line. It is formed.

In addition, a drain electrode 14 is formed to correspond to the source electrode 12, and the reflective electrode 10 is connected to the drain electrode 14 through a contact hole 16 disposed on the drain electrode 14. It is in electrical contact. In general, the reflective electrode 10 is made of a metal having excellent reflectance.

FIG. 3 is a cross sectional view taken along the cut line III-III of FIG. 2, and the cross-sectional structure of the conventional reflective TFT-LCD is well shown.

Looking at the cross-sectional structure of the reflective TFT-LCD, a gate electrode 18 is formed on the substrate 1, a gate insulating film 20 is formed on the gate electrode 18, and an upper portion of the gate electrode 18. The semiconductor layer 22 is formed on the gate insulating layer 20, and source and drain electrodes 12 and 14 contacting the semiconductor layer 22 are formed.

In addition, a passivation layer 24 is formed on the entire surface of the substrate, where the source and drain electrodes 12 and 14 are exposed. A drain contact hole 16 is formed in the passivation layer 24 so that a part of the drain electrode 14 is exposed, and a reflective electrode contacting the drain electrode 14 through the drain contact hole 16. 10) is formed on the protective film 24.

The reflective TFT-LCD as described above can be used for a long time because it is driven by using natural light or an external artificial light source without using an internal light source such as a backlight.

In other words, the reflective TFT-LCD reflects the external natural light to the reflective electrode 10 and uses the reflected light.

However, natural or artificial light sources do not always exist. That is, the reflective TFT-LCD may be used in the daytime where natural light is present or inside an office and a building where external artificial light exists, but the reflective TFT-LCD cannot be used at night when natural light does not exist. do.

Therefore, in order to solve the above problems, while adopting the advantages of the reflective liquid crystal display and the transmissive liquid crystal display device, the reflection-transmissive liquid crystal display device that can be used simultaneously day and night has been researched and developed.

4 is a plan view showing a plane of a conventional transflective liquid crystal display device, in which a gate line 50 is formed in a horizontal direction, and a gate electrode 52 protruding from the gate line 50 is formed.

The data line 60 is formed in the vertical direction, and the source electrode 62 extending from the data line 60 in the vicinity of the gate electrode 52 overlaps the gate electrode 52 by a predetermined area. do.

In addition, a drain electrode 64 is formed at a position corresponding to the source electrode 62 with respect to the gate electrode 52.

The drain electrode 64 is in contact with the pixel parts 68 and 70 formed of two different materials through the contact hole 66 formed on the drain electrode 64. That is, the reflective electrode 68 is formed of a substantially opaque metal material and the pixel electrode 70 is formed of a substantially transparent conductive material. The reflective electrode 68 further includes a transmission hole 72 therein. have.

The transmission hole 72 is a square or the like, and its function will be described later.

The pixel electrode 70 may have an area larger than that of the transmission hole 72 formed in the reflective electrode 68. That is, the reflective liquid crystal display device is formed in such a shape that the transmission hole 72 is covered by the pixel electrode 70.

FIG. 5A to FIG. 5D are process drawings showing a cross-sectional view taken along the cutting line V-V of FIG. 4 showing a plan view of the reflective transmissive liquid crystal display, and the manufacturing process will be described in detail with reference to FIGS. 5A to 5D. .

FIG. 5A is a view showing the step of forming the gate electrode 52 on the substrate 1. The gate electrode 52 may be made of metal, such as chromium and tungsten, which are highly corrosion resistant, and may be used as an aluminum alloy having a low resistance.

5B illustrates the steps of forming the gate insulating film 80, the semiconductor layer 82, and the source and drain electrodes 62 and 64.

In other words, the gate insulating layer 80 is formed on the substrate 1 to cover the gate electrode 52, and the semiconductor layer 82 is formed on the gate insulating layer 80 on the gate electrode 52. do. Thereafter, source and drain electrodes 62 and 64 are formed on the semiconductor layer 82.

Thereafter, as shown in FIG. 5C, the passivation layer 84 is deposited on the source and drain electrodes 62 and 64 and the exposed gate insulating layer 80, and a portion of the drain electrode 64 is exposed. The first drain contact hole 66 is formed. The passivation layer 84 has an insulating property, a silicon nitride film (SiN x ), a silicon oxide film (SiO 2 ), and the like, which are excellent in moisture resistance and light transmittance, are mainly used.

After forming the first drain contact hole 66, the pixel electrode 70 contacting the drain electrode 64 is formed. The pixel electrode 70 is preferably mainly used indium tin oxide (ITO) having excellent light transmittance.

5D is a view showing the step of forming the reflective electrode 68. As shown in FIG. The reflective electrode 68 is positioned on the pixel electrode 70. The BCB (benzocyclobutene) having excellent light transmittance is deposited on the pixel electrode 70 with the interlayer insulating layer 86, and the first drain contact hole is formed. The second drain contact hole 66 ′ is patterned such that a part of the pixel electrode 70 is exposed in the vicinity of the formed 66.

Thereafter, a reflective electrode 68 is formed on the interlayer insulating layer 86 to contact the pixel electrode 70.

The reflective electrode 70 is substantially opaque, and a metal having excellent light reflectance is used.

FIG. 6 is a cross-sectional view illustrating one pixel of the above-described reflective transparent TFT-LCD. Referring to FIG. 6, the operation of the reflective transparent TFT-LCD will be described below. Here, the drawing shown in FIG. 6 represents only a schematic portion of FIGS. 5A-5D showing a process according to an embodiment of the invention. That is, FIG. 6 shows the transmission hole, the reflection, and the pixel electrode part as a center point.

In the reflective mode, the reflective electrode 68 reflects the external light 110 incident to the outside of the top plate 106 back to the top plate 106.

In this case, when the reflective electrode 68 receives a signal from a switching element (not shown), a phase change of the liquid crystal layer 100 occurs, and thus a change in the amount of light that is reflected back causes a change in the amount of light. Accordingly, the signal applied to the reflective electrode 68 is represented as an image in accordance with the change of the color that is colored by the color filter 104 formed on the upper plate.

In the transmission mode, the light 112 generated by the backlight 102 is transmitted to the upper plate 106 through the pixel electrode 70 positioned in the transmission hole 72 formed in the reflective electrode 68. will be.

At this time, when a signal is applied to the pixel electrode 70 by the action of the switching element as in the reflection mode, the image of the liquid crystal layer 100 is changed, at this time is emitted from the backlight 102 and the liquid crystal layer The light 112 that has passed through is colored by the color filter 104 formed on the upper plate 106 and can be viewed as a color screen.

FIG. 7 is an enlarged cross-sectional view of a portion A of FIG. 5D and is a view illustrating a portion in which the drain electrode 64 is in contact with the pixel electrode 70 and the reflective electrode 68.

In the conventional transflective liquid crystal display device, as shown in FIG. 7, between the drain electrode 64 and the pixel electrode 70 to contact the pixel electrode 70 with the drain electrode 64. A first drain contact hole 66 is formed through the photolithography process of the passivation layer 84 positioned in the photoresist process, and then the first electrode is contacted with the drain electrode 64 through the first drain contact hole 66 '. It was.

In addition, after forming the second drain contact hole 66 ′ in the interlayer insulating layer 86 to contact the reflective electrode 68 with the drain electrode 64, the pixel electrode contacting the drain electrode 64 ( 70, an indirect contact with the drain electrode 64 was used.

As described above, first and second drain contact holes are formed on the drain electrode 64 to contact the pixel electrode 70 and the reflective electrode 68. Accordingly, a problem that a photolithography process is frequently used occurs. do.

That is, the photolithography process may be separated into an exposure process and an etching process, and even if the photolithography process is reduced only once, defects may be reduced and yield may be improved.

On the other hand, in the conventional reflective liquid crystal display device, since the reflective electrode 68 using substantially opaque metal is made at the last stage, the alignment key is determined by the self-reflection of the reflective electrode in the photolithography process when forming the reflective electrode. There is a disadvantage that the problem of not recognizing (align key) may occur.

In order to solve the above problems of the conventional reflective liquid crystal display device, an object of the present invention is to provide a method of manufacturing a reflective liquid crystal display device having a simple manufacturing process.

In addition, another object of the present invention is to provide a reflective liquid crystal display device having an improved aperture ratio.

In order to achieve the above object, the present invention includes a substrate in which a switching region and a pixel region are defined; A reflection plate formed on the substrate and having transmission holes formed in the pixel area; A first passivation layer formed on the substrate including the reflection plate; A gate electrode formed on the first passivation layer of the switching region; A gate insulating film formed on the substrate including the gate electrode; An active layer formed on the gate insulating layer on the gate electrode and having a channel formed thereon; A source electrode and a drain electrode in contact with the active layer and spaced apart from each other; A second passivation layer formed on the substrate including the source electrode and the drain electrode and having a drain contact hole through which the drain electrode is exposed; And a pixel electrode formed on the second passivation layer, the pixel electrode contacting the drain electrode through the drain contact hole.
In order to achieve the above object, the present invention includes the steps of providing a substrate in which a switching region and a pixel region are defined; Forming a reflection plate formed on the substrate and having a transmission hole on the pixel area; Forming a first passivation layer on the substrate including the reflector; Forming a gate electrode on the first passivation layer of the switching region; Forming a gate insulating film on the substrate including the gate electrode; Forming an active layer on the gate insulating layer corresponding to the gate electrode; Forming a source electrode and a drain electrode in contact with the active layer and spaced apart from each other; Forming a second passivation layer on the substrate including the source electrode and the drain electrode, the second passivation layer having a drain contact hole through which the drain electrode is exposed; And forming a pixel electrode on the second passivation layer, the pixel electrode contacting the drain electrode through the drain contact hole.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 8 is a plan view illustrating a plane of a reflective transmissive liquid crystal display device according to an embodiment of the present invention, in which a gate wiring 150 is formed in a horizontal direction, and a gate electrode 152 protruding from the gate wiring 150 is formed. It is.

The data line 160 is formed in the vertical direction, and the source electrode 162 extending from the data line 160 in the vicinity of the gate electrode 152 is formed to overlap the gate electrode 52 by a predetermined area. do.

In addition, a drain electrode 164 is formed at a position corresponding to the source electrode 162 around the gate electrode 152.

The drain electrode 164 is in contact with the pixel electrode 168 through the contact hole 166 formed on the drain electrode 164.

Here, the pixel electrode 168 is formed of a substantially transparent conductive material, and indium tin oxide (ITO), indium zinc oxide (IZO), or the like is used as a kind.

Although not shown in detail in FIG. 8, a reflecting plate 156 is formed under the pixel electrode 168, and the reflecting plate includes a transmission hole 154.

The pixel electrode 168 may have a larger area than the transmissive hole 154 formed in the reflective plate 156. That is, the reflective liquid crystal display device is formed such that the transmission hole 154 is covered by the pixel electrode 168.

9A to 9D are process diagrams illustrating the fabrication process of the cross section taken along the cut line VIII-VIII of FIG. 8. The fabrication process of the transflective liquid crystal display device according to the present invention includes the reflection plate 156 on the substrate 1. It begins with forming.

FIG. 9A is a diagram illustrating a step of forming a reflector plate 156 using a first metal. First, a switching region S and a pixel region P are defined on a substrate 1, and the The reflective plate 156 having the transmission hole 154 formed at a predetermined position of the pixel region P is formed.

The reflective plate 156 is formed to cover the substrate in all regions except for the transmission hole 154.

The first metal may be a substantially opaque metal, and a metal such as aluminum-neodymium (AlNd) having excellent reflectance may be used.

FIG. 9B is a diagram illustrating a step of forming a first protective layer 170 over the entire surface of the first metal (reflective plate) and the transmission hole 154 formed in the first metal.

As the first passivation layer 170, a silicon nitride layer (SiN x ), a silicon oxide layer (SiO 2 ), or the like may be used. The gate electrode 152 may be formed of a second metal on the first passivation layer 170 above the switching region. Form.

9C is a diagram illustrating a step of forming a thin film transistor in the switching region S. Referring to FIG.

The thin film transistor includes a gate electrode 152, a gate insulating layer 172, an active layer 174, and source and drain electrodes 162 and 164 of a second metal.

That is, the thin film transistor of the reflective liquid crystal display according to the present invention is an inverted staggered thin film transistor, and a gate insulating film 172 is formed to cover the gate electrode 152, and the upper portion of the gate electrode 152 is The active layer 174 is formed on the gate insulating layer 172. In addition, the source and drain electrodes 162 and 164 are formed in contact with the active layer 174.

Here, the active layer 174 is a stacked structure of pure amorphous silicon 174a and impurity amorphous silicon 174b, and the source and drain electrodes 162 and 164 are in contact with the impurity amorphous silicon 174b of the active layer. Doing.

In addition, an impurity amorphous silicon existing between the source and drain electrodes 162 and 164 is removed to form a channel CH of the thin film transistor.

9D illustrates a step of forming the pixel electrode 168.

First, before forming the pixel electrode 168, a second passivation layer 176 may be formed to protect the thin film transistor. A drain contact hole 166 exposing a part of the drain electrode 164 is formed in the second passivation layer 176, and the drain electrode 164 and the pixel electrode (exposed through the drain contact hole 166) are formed. 168 contacts.

The pixel electrode 168 is formed in the pixel region P, and is formed in a form of vertically covering the transmission hole 154 formed in the reflective plate 156.

In addition, the pixel electrode 168 uses a substantially transparent conductive metal, and a metal oxide such as indium tin oxide (ITO) or indium zinc oxide (IZO) is used.

The thin film transistor array substrate of the reflective liquid crystal display device is completed by forming the pixel electrode 168.

As described above, in the reflective liquid crystal display according to the present invention, a reflective plate is formed on the entire surface of the substrate as a first step, and the reflective plate is not in contact with the drain electrode of the thin film transistor. Thus, the contact hole process for contacting the drain electrode is eliminated, and the manufacturing process is reduced.

In addition, since the reflector is first formed on the substrate, it is possible to reduce the probability that a defect occurs in the alignment process due to the reflection of the reflector.

In addition, since the reflecting plate is formed in the entire region of the substrate except for the through hole, the reflecting plate overlaps with the entire gate electrode and the gate wiring, thereby improving the aperture ratio in the reflection mode.

As described above, when the reflective liquid crystal display device is manufactured according to exemplary embodiments of the present invention, the following characteristics are present.

First, since only the pixel electrode is in contact with the drain electrode, the contact hole process for exposing the drain electrode is reduced compared with the conventional manufacturing process of the reflective liquid crystal display device.

Second, since the manufacturing process of the reflecting plate is formed in the first process, there is an advantage to reduce the alignment defect due to the reflection of the reflecting plate.

Third, since the reflector is formed in the entire region of the substrate except for the through hole, the reflector is overlapped with the entire gate electrode and the gate wiring, thereby improving the aperture ratio in the reflection mode.

Claims (4)

  1. A substrate in which a switching region and a pixel region are defined;
    A reflection plate formed on the substrate and having transmission holes formed in the pixel area;
    A first passivation layer formed on the substrate including the reflection plate;
    A gate electrode formed on the first passivation layer of the switching region;
    A gate insulating film formed on the substrate including the gate electrode;
    An active layer formed on the gate insulating layer on the gate electrode and having a channel formed thereon;
    A source electrode and a drain electrode in contact with the active layer and spaced apart from each other;
    A second passivation layer formed on the substrate including the source electrode and the drain electrode and having a drain contact hole through which the drain electrode is exposed;
    A pixel electrode formed on the second passivation layer and contacting the drain electrode through the drain contact hole;
    Array substrate of a transflective liquid crystal display comprising a.
  2. The method according to claim 1,
    And the reflector plate is a substantially opaque metal.
  3. The method according to claim 1,
    And the pixel electrode is a material selected from the group consisting of indium tin oxide (ITO) and indium zinc oxide (IZO).
  4. Providing a substrate in which a switching region and a pixel region are defined;
    Forming a reflection plate formed on the substrate and having a transmission hole on the pixel area;
    Forming a first passivation layer on the substrate including the reflector;
    Forming a gate electrode on the first passivation layer of the switching region;
    Forming a gate insulating film on the substrate including the gate electrode;
    Forming an active layer on the gate insulating layer corresponding to the gate electrode;
    Forming a source electrode and a drain electrode in contact with the active layer and spaced apart from each other;
    Forming a second passivation layer on the substrate including the source electrode and the drain electrode, the second passivation layer having a drain contact hole through which the drain electrode is exposed;
    Forming a pixel electrode formed on the second passivation layer and contacting the drain electrode through the drain contact hole;
    Method of manufacturing an array substrate of a transflective liquid crystal display device comprising a.
KR19990063250A 1999-12-28 1999-12-28 Array substrate of transflective liquid crystal display device and method for fabricating the same KR100661825B1 (en)

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KR19990063250A KR100661825B1 (en) 1999-12-28 1999-12-28 Array substrate of transflective liquid crystal display device and method for fabricating the same
US09/741,047 US6532045B2 (en) 1999-12-28 2000-12-21 Transflective liquid crystal display device and method of manufacturing the same

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Families Citing this family (39)

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Publication number Priority date Publication date Assignee Title
US6833883B2 (en) * 2001-02-13 2004-12-21 Lg. Philips Lcd Co., Ltd. Array substrate for reflective and transflective liquid crystal display devices and manufacturing method for the same
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JP3908552B2 (en) * 2001-03-29 2007-04-25 Nec液晶テクノロジー株式会社 Liquid crystal display device and manufacturing method thereof
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JP3633591B2 (en) * 2001-07-27 2005-03-30 セイコーエプソン株式会社 Electro-optical device substrate, electro-optical device substrate manufacturing method, electro-optical device, electro-optical device manufacturing method, and electronic apparatus
KR100776756B1 (en) * 2001-08-01 2007-11-19 삼성전자주식회사 Reflection-penetration type liquid crystal display device and method for fabricating thereof
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JP3675404B2 (en) * 2001-09-25 2005-07-27 セイコーエプソン株式会社 Transflective liquid crystal device and electronic equipment using the same
JP3675427B2 (en) * 2001-09-25 2005-07-27 セイコーエプソン株式会社 Transflective liquid crystal device and electronic equipment using the same
US20050179838A1 (en) * 2001-09-28 2005-08-18 Yoshihiko Hamawaki Reflecting electrode forming method and liquid crystal display
TWI224696B (en) * 2001-10-31 2004-12-01 Optrex Kk Transflective color liquid crystal display and method for fabricating a substrate therefor
JP4068942B2 (en) * 2001-12-17 2008-03-26 セイコーエプソン株式会社 Electro-optical device, manufacturing method thereof, and electronic device
JP2003222854A (en) 2002-01-31 2003-08-08 Casio Comput Co Ltd Liquid crystal display device and manufacturing method therefor
AU2003234489A1 (en) 2002-05-06 2003-11-11 Toppoly Optoelectronics Corp. High brightness twisted nematic transflective liquid crystal display
KR100467944B1 (en) * 2002-07-15 2005-01-24 엘지.필립스 엘시디 주식회사 Transflective Liquid Crystal Display Device and Method for fabricating the same
JP2004061952A (en) * 2002-07-30 2004-02-26 Hitachi Displays Ltd Liquid crystal display
JP4489346B2 (en) * 2002-12-17 2010-06-23 シャープ株式会社 Liquid crystal display
KR100976981B1 (en) * 2003-02-05 2010-08-19 삼성전자주식회사 Liquid crystal display panel assembly
KR100945442B1 (en) * 2003-02-28 2010-03-05 엘지디스플레이 주식회사 Color Filter on Transister Structrure Transflective Type Liquid Crystal Display Device
US7190000B2 (en) * 2003-08-11 2007-03-13 Samsung Electronics Co., Ltd. Thin film transistor array panel and manufacturing method thereof
KR100989166B1 (en) * 2003-08-22 2010-10-20 엘지디스플레이 주식회사 Liquid Crystal Display Device And Method For Fabricating The Same
TWI252445B (en) * 2004-03-03 2006-04-01 Toppoly Optoelectronics Corp Mirror-surface display
KR100616708B1 (en) * 2004-04-12 2006-08-28 엘지.필립스 엘시디 주식회사 array board of liquid crystal display and fabrication method thereof
TW200622357A (en) * 2004-12-28 2006-07-01 Hon Hai Prec Ind Co Ltd Display panel and liquid crystal display device
US7858451B2 (en) * 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
KR101136298B1 (en) * 2005-05-13 2012-04-19 엘지디스플레이 주식회사 Liquid Crystal Display and the fabrication method thereof
EP3614442A3 (en) * 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
KR101112655B1 (en) * 2005-11-15 2012-02-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Active Matrix Display Device and a Television Receiver Including the Same
CN101311803A (en) * 2007-05-25 2008-11-26 群康科技(深圳)有限公司 Liquid crystal display panel and LCD device
TWI518913B (en) 2008-11-07 2016-01-21 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
JP2010156960A (en) * 2008-12-03 2010-07-15 Semiconductor Energy Lab Co Ltd Liquid crystal display device
KR101906751B1 (en) 2009-03-12 2018-10-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
TWI556323B (en) * 2009-03-13 2016-11-01 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the semiconductor device
WO2011033915A1 (en) * 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5517717B2 (en) * 2010-04-16 2014-06-11 株式会社ジャパンディスプレイ Liquid crystal display
TWI496043B (en) * 2012-11-07 2015-08-11 Innocom Tech Shenzhen Co Ltd In-cell touch display and electronic apparatus thereof
KR20150005053A (en) * 2013-07-04 2015-01-14 삼성디스플레이 주식회사 Array substrate and liquid crystal display panel having the same
CN104865731A (en) * 2015-05-27 2015-08-26 合肥京东方光电科技有限公司 Display panel and manufacturing method thereof and display device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100241721B1 (en) * 1996-08-26 2000-02-01 구본준 Liquid crystal display element and its manufacturing method
US6195140B1 (en) * 1997-07-28 2001-02-27 Sharp Kabushiki Kaisha Liquid crystal display in which at least one pixel includes both a transmissive region and a reflective region

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