KR100820592B1 - 피처리물 수용부가 형성된 서셉터 및 그러한 서셉터를구비한 화학 기상증착 장치 - Google Patents
피처리물 수용부가 형성된 서셉터 및 그러한 서셉터를구비한 화학 기상증착 장치 Download PDFInfo
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- KR100820592B1 KR100820592B1 KR1020060102779A KR20060102779A KR100820592B1 KR 100820592 B1 KR100820592 B1 KR 100820592B1 KR 1020060102779 A KR1020060102779 A KR 1020060102779A KR 20060102779 A KR20060102779 A KR 20060102779A KR 100820592 B1 KR100820592 B1 KR 100820592B1
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- 239000000126 substance Substances 0.000 title abstract description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 15
- 230000002452 interceptive effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 18
- 238000000151 deposition Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 230000004308 accommodation Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0209—Pretreatment of the material to be coated by heating
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- H01L21/205—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (5)
- 화학 기상증착 장치용 서셉터에 있어서,성막이 이루어지는 면에 피 처리물의 일부가 삽입되어 안착되도록 일부가 제거되어 수용부가 형성되며,상기 수용부의 성막이 이루어지는 면의 가장자리에는 섀도우 프레임이 안착되도록 단이 형성되고,상기 단은 상기 섀도우 프레임에 의하여 차폐되는 것을 특징으로 하는 화학기상증착 장치용 서셉터.
- 제1항에 있어서,상기 수용부의 깊이는 피 처리물의 높이 이하인 것을 특징으로 하는 화학기상증착 장치용 서셉터.
- 제1항에 있어서,상기 섀도우 프레임의 상기 서셉터를 향하는 면에 단턱이 형성되며,상기 섀도우 프레임의 상기 단턱이 형성된 면의 배면은 경사진 것을 특징으로 하는 화학기상증착 장치용 서셉터.
- 서셉터와, 섀도우 프레임을 포함하는 화학 기상 증착 장치에 있어서,상기 서셉터의 성막이 이루어지는 면에 피 처리물의 일부가 삽입되어 안착되도록 일부가 제거되어 수용부가 형성되며,상기 수용부의 성막이 이루어지는 면의 가장자리에는 섀도우 프레임이 안착되도록 단이 형성되고,상기 단은 상기 섀도우 프레임에 의하여 차폐되는 것을 특징으로 하는 화학 기상 증착 장치.
- 제4항에 있어서,상기 섀도우 프레임의 상기 서셉터를 향하는 면에 단턱이 형성되며,상기 섀도우 프레임의 상기 단턱이 형성된 면의 배면은 경사진 것을 특징으로 하는 화학 기상 증착 장치.
Priority Applications (1)
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KR1020060102779A KR100820592B1 (ko) | 2006-10-23 | 2006-10-23 | 피처리물 수용부가 형성된 서셉터 및 그러한 서셉터를구비한 화학 기상증착 장치 |
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KR1020060102779A KR100820592B1 (ko) | 2006-10-23 | 2006-10-23 | 피처리물 수용부가 형성된 서셉터 및 그러한 서셉터를구비한 화학 기상증착 장치 |
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KR100820592B1 true KR100820592B1 (ko) | 2008-04-08 |
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KR1020060102779A KR100820592B1 (ko) | 2006-10-23 | 2006-10-23 | 피처리물 수용부가 형성된 서셉터 및 그러한 서셉터를구비한 화학 기상증착 장치 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200121140A (ko) | 2019-04-15 | 2020-10-23 | (주)위지트 | 비증착 구간 발생이 없는 서셉터 |
KR20210033149A (ko) | 2019-09-18 | 2021-03-26 | (주)위지트 | 플라즈마 화학기상 증착장비용 상부전극 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08139037A (ja) * | 1994-11-09 | 1996-05-31 | Hitachi Electron Eng Co Ltd | 気相反応装置 |
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- 2006-10-23 KR KR1020060102779A patent/KR100820592B1/ko active IP Right Grant
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08139037A (ja) * | 1994-11-09 | 1996-05-31 | Hitachi Electron Eng Co Ltd | 気相反応装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200121140A (ko) | 2019-04-15 | 2020-10-23 | (주)위지트 | 비증착 구간 발생이 없는 서셉터 |
KR20210033149A (ko) | 2019-09-18 | 2021-03-26 | (주)위지트 | 플라즈마 화학기상 증착장비용 상부전극 |
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