KR100811824B1 - Apparatus for cleaning substrates - Google Patents

Abstract

The present invention relates to a substrate processing apparatus for cleaning and drying a substrate by supplying a plurality of chemical liquids or gases onto the substrate. A substrate processing apparatus of the present invention includes a substrate support member having a chuck on which a substrate is placed; A lower chamber having an upper portion open and shaped to surround the chuck; An upper chamber that opens or closes an upper portion of the lower chamber so that a drying process for the substrate is performed in an isolated state from the outside; And a sealing member installed at a contact surface where the lower chamber and the upper chamber abut against each other to maintain airtightness from the outside. The substrate processing apparatus having such a configuration can obtain an effect such as effectively blocking external air from entering the space where the substrate is processed.

Substrate, Clean, Dry, Cover

Description

Substrate Processing Unit {APPARATUS FOR CLEANING SUBSTRATES}

1 is a schematic view of a substrate processing apparatus according to an embodiment of the present invention.

2 is a view showing a state in which the lower chamber is partially open in the substrate processing apparatus according to the embodiment of the present invention.

3 is a view showing a state in which the lower chamber is entirely opened in the substrate processing apparatus according to the embodiment of the present invention.

4 shows the upper chamber.

5 is a view showing a flow of a drying fluid injected from the first nozzles of the upper chamber.

6 and 7 are partial perspective views showing a sealing member installed to maintain airtightness between the upper chamber and the lower chamber.

Explanation of symbols on the main parts of the drawings

110: substrate support member

120: lower chamber

130: upper chamber

140: indirect injection nozzle

160: chemical nozzle member

170: decompression member

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for processing a semiconductor substrate, and more particularly, to a substrate processing apparatus for cleaning and drying a substrate by supplying a chemical liquid or gas onto the substrate.

Generally, in the semiconductor manufacturing process, deposition, etching, coating of photo-resist, developing, removing asher, and the like of a dielectric material are repeated several times. A process of removing foreign matters generated in each process includes a cleaning process using deionized water or a chemical.

In general, the cleaning and drying apparatus is a wafer chuck capable of processing a single wafer, and then rotates the wafer by a motor while flowing the chemical liquid or pure water through the injection nozzle at the top of the wafer, The chemical liquid or pure water is spread to the entire surface of the wafer by the rotational force so that the process is performed.

As described above, in the single wafer type washing drying apparatus, the washing drying step is performed by drying with N2 gas after rinsing with pure water.

However, as the wafer becomes large and the pattern formed on the wafer becomes fine, a phenomenon in which pure water used in the cleaning process is not completely removed but undried occurs. In addition, since the cleaning and drying are performed while the wafer is exposed to the air, drying defects are generated due to a great influence on the external environment.

An object of the present invention is to provide a substrate processing apparatus capable of rapid substrate drying.

It is an object of the present invention to provide a substrate processing apparatus capable of protecting a substrate from external contamination.

An object of the present invention to provide a substrate processing apparatus that can minimize the water spots generated during the substrate drying process.

An object of the present invention to provide a substrate processing apparatus that can minimize the impact from the external environment.

An object of the present invention is to provide a substrate processing apparatus excellent in the sealing of the space in which the substrate is processed.

According to an aspect of the present invention for achieving the above object, a substrate processing apparatus includes a substrate support member having a chuck on which a substrate is placed; A lower chamber having an upper portion open and shaped to surround the chuck; An upper chamber that opens or closes an upper portion of the lower chamber so that a drying process for the substrate is performed in an isolated state from the outside; And a sealing member installed at a contact surface where the lower chamber and the upper chamber abut against each other to maintain airtightness from the outside.

According to one embodiment of the invention, the sealing member is installed on the contact surface of the upper chamber, and includes a pad portion having at least one uneven portion so that the penetration path of air flowing from the outside is refracted.

According to an embodiment of the present invention, the lower chamber includes loop-shaped protrusions to increase an area of the contact surface in contact with the sealing member and to penetrate an air penetration path that may be introduced from the outside.

According to an embodiment of the present invention, the lower chamber includes loop-shaped protrusions to increase an area of the contact surface in contact with the sealing member and a penetration path of air that can be introduced from the outside, and the sealing member is It is installed on the contact surface of the upper chamber, and includes a pad portion having sealing grooves into which the projections are inserted.

According to one embodiment of the invention, the sealing member further extends from the outside of the pad portion further includes a wing portion in contact with the side of the lower chamber.

According to an embodiment of the present invention, the substrate processing apparatus further includes an indirect spray nozzle which is installed at the edge of the upper chamber and sprays the drying fluid toward the center of the upper chamber so that the drying fluid is indirectly injected onto the substrate.

According to one embodiment of the present invention, the upper chamber includes an annular space for guiding the dry fluid injected from the indirect spray nozzle toward the center of the upper chamber; A central opening through which the drying fluid gathered in the center of the upper chamber along the annular space exits toward the substrate; And a guide surface for guiding the drying fluid such that the drying fluid exiting through the central opening gradually diffuses from the center of the substrate to the edge.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments introduced herein are provided so that the disclosure may be made thorough and complete, and to fully convey the spirit of the invention to those skilled in the art. Accordingly, the shape of the elements in the drawings and the like are exaggerated to emphasize a clearer description.

An embodiment of the present invention will be described in detail with reference to FIGS. 1 to 7. In addition, in the drawings, the same reference numerals are denoted together for components that perform the same function.

The present invention is to provide a substrate processing apparatus that can achieve the effect of increasing the drying efficiency of the substrate, blocking external contamination and preventing oxide films. To this end, the present invention can indirectly inject the drying fluid into the chamber (upper and lower chamber) of the upper and lower separation structure that can separate the substrate processing space from the outside so that the drying process of the substrate is processed below atmospheric pressure The upper chamber, which has a decompression member for depressurizing the processing space of the chamber, is characterized by its characteristics.

1 is a view schematically showing a substrate processing apparatus according to an embodiment of the present invention. 2 is a view showing a state in which the lower chamber is partially open in the substrate processing apparatus according to the embodiment of the present invention. 3 is a view showing a state in which the lower chamber is entirely opened in the substrate processing apparatus according to the embodiment of the present invention.

1 to 3, the substrate processing apparatus 100 performs processing such as chemical cleaning, rinsing, and drying while spinning the substrate w.

The substrate processing apparatus 100 includes a substrate support member 110 having a chuck 112 on which a substrate W is placed, a lower chamber 120, an upper chamber 130, and a chemical liquid nozzle member. 160, a pressure reducing member 170, and a sealing member 196.

The substrate supporting member 110 supports the substrate w during the processing process. The substrate support member 110 has a chuck 112, a spindle 114, a rotation member 116, a lifting member 117, and a back nozzle portion 118.

The chuck 112 is disposed in an inner space of the lower chamber 120. The chuck 112 includes an upper surface 112a on which the substrate W is loaded, support pins 113a supporting the substrate W while being spaced apart from the upper surface 112, and the substrate ( and chucking pins 113b for fixing w). The support pins 113a support the substrate spaced apart from the upper surface 112a of the chuck 112, and the chucking pins 113b chuck a portion of the edge of the substrate during the process.

Spindle 114 is engaged with the central lower portion of chuck 112. The spindle 130 is in the form of a hollow shaft, the inside of which is hollow, and transmits the rotational force of the rotating member 116 to the chuck 112. Although not shown in detail, the rotating member 116 may be formed of a conventional configuration such as a driving unit such as a motor generating a rotational force, and a belt, a power transmission unit such as a chain that transfers the rotational force generated from the driving unit to the spindle.

The elevating member 117 is for moving the chuck 112 up and down so that the relative height of the chuck 112 changes in the lower chamber 120 depending on the type of fluid used in the process (or depending on the treatment process). The chuck 112 is moved by the elevating member 117 to a height corresponding to the first, second, and third suction ducts 122a, 122b, and 122c which will be described later, depending on the type of fluid (or processing step) used. In the above-described example, the lower chamber 120 is fixed, and the chuck 112 is described as being moved up and down according to a process (or a type of fluid used) such as cleaning, rinsing, and drying. However, on the contrary, the chuck 112 may be fixed and the lower chamber 120 may be moved up and down.

The bag nozzle part 118 is for selectively injecting a fluid for cleaning and drying to the bottom of the substrate (w), the bag nozzle part 118 is a portion of the fluid passing through the hollow section of the spindle 114 It includes a supply pipe 118a, which is a movement path, and a nozzle 118b installed at the center of the upper surface of the chuck 112. The nozzle 118b is connected to the supply pipe 118a and exposed to the central portion of the chuck 112 to inject a fluid for cleaning and drying onto the back of the substrate to perform back cleaning and drying of the substrate. The supply pipe 118a may be composed of a predetermined pipe or may be defined as an empty space in the form of a pipe inside the spindle 114. The fluid injected through the nozzle 118b to the back center of the substrate is easily dispersed to the edge of the substrate by the rotation of the substrate.

The lower chamber 120 is shaped so that the top is open and wraps around the chuck 112, and the annular first, second and third suction ducts 122a and 122b for introducing and sucking the fluid scattered on the rotated substrate, 122c) is arranged in multiple stages and has an exhaust port 124 connected to the vacuum line 174 to allow forced exhaust. Although not shown, the lower chamber 120 is connected to the discharge line for the chemical liquid recovery.

1, 4, and 5, the upper chamber 130 may include an upper cup 132 that opens or closes an upper portion of the lower chamber 120, and an upper cup 132 installed in a fluid for drying. Indirect injection nozzle 140 for injecting the indirectly to the substrate and the upper cup 132 includes an opening and closing drive unit 138 for driving the upper cup 132 to open or close the upper portion of the lower chamber 120.

The upper cup 132 is large enough to cover the upper portion of the lower chamber 120, and has an annular space 134, a central opening 135, a guide surface 136, and a protruding wall 137. The annular space 134 is an umbrella-shaped space composed of an edge portion 134a on which the indirect injection nozzle 140 is installed and a central portion 134b higher than the edge portion 134a, and is injected from the indirect injection nozzle 140. It has an inclined passage 134c for guiding the drying fluid to the center.

The indirect injection nozzle 140 may be formed in a ring shape installed at the edge portion 134a of the annular space 134, and the indirect injection nozzle 140 is formed with injection holes 142 at predetermined intervals, and the injection hole 142. They are formed to spray the drying fluid in the upward direction. The drying fluid is injected through the injection holes 142 of the indirect injection nozzle 140 and then directed along the annular space 134 to the center portion 134b (the center of the upper cup) of the annular space.

Drying fluid collected at the central portion 134b of the annular space 134 exits the processing space a through the central opening 135. The protruding wall 137 is a protruding portion located between the annular space 134 through which the dry fluid injected from the indirect spray nozzle 140 flows and the processing space a of the substrate. The protruding wall 137 is an indirect spray nozzle. The substrate is protected from foreign matter falling from 140.

 For reference, the drying fluid may include an organic solvent (IPA) and nitrogen gas, and the organic solvent and nitrogen gas may be used heated to a temperature of 30 degrees or more and less than 90 degrees.

As described above, the present invention can maintain the laminar flow of the entire surface by indirectly spraying the drying fluid onto the substrate, and can uniformly maintain the concentration distribution of the drying fluid compared to the conventional swing nozzle method of spraying directly onto the substrate surface. In particular, the indirect injection nozzle 140 is located at the edge of the annular space 134 (the indented space) 134a to prevent foreign substances falling from the injection holes 142 of the indirect injection nozzle 140 falling onto the substrate. can do.

On the other hand, the guide surface 136 of the upper cup 132 has a structure inclined downward so that the height is lowered toward the edge from the center. The guide surface 136 guides the drying fluid so that the drying fluid exiting through the central opening 135 flows as it gradually diffuses (spreads) from the center of the substrate to the edge. The guide surface 136 of this structure is to prevent the density of the drying fluid from lowering toward the edge compared to the center of the substrate, the guide surface 136 of the upper cup 132 becomes narrower toward the edge than the center of the substrate To provide space a.

As described above, since the processing space a of the upper portion of the substrate decreases from the center to the edge, the density of the drying fluid flowing from the center to the edge of the substrate increases toward the edge. In addition, the drying fluid is uniformly provided on the front surface of the substrate because it flows while gradually spreading (spreading) from the center of the substrate to the edge.

In particular, since the processing space a on the substrate, which becomes the fluid passage, becomes narrower toward the edge, the drying fluid moves faster toward the substrate edge than the center of the substrate. Therefore, the removal efficiency and the moisture removal efficiency of the particles remaining on the substrate surface can be improved.

4 to 7, the inside of the chamber may be maintained in a vacuum state at the portion where the upper chamber 130 and the lower chamber 120 are coupled to each other (contact), and at the same time to prevent leakage of dry fluid and the like. Sealing member 196 is installed to enable. The sealing member 196 is installed on the contact surface 131 of the upper cup 132 and has a pad portion 198 for primary sealing, and a thin wing portion extending inclined downward from the edge of the pad portion 198 and sealing secondly ( 199). The pad part 198 is in contact with the contact surface 121 (corresponding to the upper end of the first suction duct) of the lower chamber 120, and the pad part 198 is in contact with the contact surface 121 of the lower chamber 120. Three protrusions 121a formed therein have sealing grooves 198a into which they can be inserted. And the wing portion 199 extends from the edge of the pad portion 198 to surround the side of the lower chamber 120, the thickness of the wing portion 199 is gradually thinner toward the end.

 As such, the present invention increases the contact area between the contact surface of the sealing member 196 and the lower chamber 120, and the penetration path of air that can be introduced from the outside is deflected. It will take a long time. As a result, such a sealing structure makes air flow (inflow) from the outside into the substrate processing space (inside the chamber) difficult, so that the airtight holding efficiency is very high. The sealing member 196 is formed in a ring shape, and is made of Teflon-based or equivalent material having excellent chemical resistance so that corrosion does not occur.

The decompression member 170 is for depressurizing the closed processing space a formed by the combination of the lower chamber 120 and the upper chamber 130. The pressure reducing member 170 has a vacuum pump 172, one end of which is connected to the vacuum pump 172 and the other end of which is connected to the exhaust port 124 of the lower chamber 120.

As described above, the substrate processing apparatus 100 of the present invention not only separates the processing space a of the substrate w from the outside by the upper chamber 130, but also processes the substrate w isolated from the outside. The space (enclosed space; a) has a structural feature capable of reducing the pressure below atmospheric pressure. According to this structural feature, it is possible to minimize the influence of the external environment in the drying process of the substrate, it is possible to quickly dry the substrate.

Although not shown, the lower chamber 120 and the chuck 112 of the substrate support member 110 may be configured to elevate relatively or separately, and the substrate w may be lifted from the substrate support member (the substrate support member ( The substrate 120 may be loaded into the chuck 112 of the 110 or the unloaded substrate W may be unloaded.

1 and 3, the chemical liquid nozzle member 160 is for injecting a fluid for cleaning and rinsing fluid onto the upper surface of the substrate w, and the chemical liquid nozzle member 160 is a nozzle moving member 164. It includes a nozzle 162 that is linearly moved in the vertical direction by the () or rotated out of the lower chamber 120 in the upper portion of the center of the wafer (W). The nozzle moving member 164 has a horizontal support 166 to which the nozzle 162 is coupled and a vertical support 168 coupled thereto and rotatable by a motor (not shown).

As such, the substrate processing apparatus 100 of the present invention may change the number of injection holes or the type of fluid supplied to the injection holes according to the cleaning and drying method of the substrate, and the interval between the injection holes may also be changed. For example, a mixed solution of deionized water and a hydrofluoric acid solution, deionized water, a mixed solution of an ammonia solution and an aqueous peroxide solution may be used as the fluid for cleaning, and isopropyl alcohol vapor and nitrogen gas are mixed into the fluid for drying. Gas, nitrogen gas, and the like can be used.

As shown in FIG. 5, the spacing between the edge of the upper cup 132 and the substrate as the drying process proceeds should be at least 0.5 cm to prevent water particles and dry fluid from the substrate from hitting and rebounding the walls of the lower chamber. It is preferred to be spaced at most 2 cm apart.

Looking at the process of cleaning and drying the substrate using the substrate processing apparatus as described above.

1 to 6, the substrate w is loaded into the chuck 122 through the open top of the lower chamber 120. The substrate w is chucked by the chucking pins 113b while being supported by the support pins 113a. The substrate w is rotated together with the chuck 112 by the operation of the rotating member 116. Subsequently, the rotated substrate is cleaned and rinsed by the fluid injected through the nozzle 162 of the chemical nozzle member 160 (see FIG. 3).

After the cleaning and rinsing treatment of the substrate is completed, the drying treatment to the substrate w is performed. The drying treatment of the substrate proceeds quickly and in an environment below atmospheric pressure so that water spots do not occur on the substrate surface.

Looking at the drying process in detail, first the upper portion of the lower chamber 120 is closed by the upper cup 132. In addition, the processing space a sealed by the upper chamber 130 and the lower chamber 120 is decompressed to atmospheric pressure or lower by the pressure reducing member 170. When the processing space a is reduced to below atmospheric pressure, the substrate w is dried by a drying fluid indirectly injected through the indirect spray nozzle 140. Here, the drying fluid may be provided through the indirect injection nozzle 140 from the time before the processing space a is depressurized (the moment the upper chamber moves to seal the lower chamber). On the other hand, the indirect injection nozzle 140 is located at the edge portion 134a of the annular space 134 blocked by the protruding wall 137, and the foreign matter falling from the injection hole 142 because the injection hole 142 faces upward. It is possible to prevent substrate contamination due to.

The drying fluid is injected through the injection holes 142 of the indirect injection nozzle 140 and is then collected along the annular space 134 to the central portion 134b (center of the upper cup) of the annular space. Drying fluid collected at the central portion 134b of the annular space 134 exits the processing space a through the central opening 135. Drying fluid exiting through the central opening 135 rapidly and uniformly dry the substrate surface as it gradually diffuses (spreads) from the center of the rotating substrate w to the edge.

In the present invention, the upper and lower surfaces of the substrate can be cleaned and dried at the same time. The bottom cleaning and drying of the substrate w is performed by supplying the same fluid as the fluid provided on the substrate w through the nozzle 152 of the bag nozzle unit 150 to the bottom of the substrate while the substrate is rotated. Is done.

When the substrate drying process is completed, the upper cup 132 of the upper chamber 130 is raised to the position shown in FIG. 2 and then moved to the position shown in FIG. 3 to open the lower chamber 120. The substrate w is unloaded from the chuck 112 with the chuck 112 stationary.

The present invention can be applied to any equipment for treating a substrate with a liquid (or gaseous) fluid. Among such embodiments, as a preferred embodiment, the rotary cleaning apparatus used in the semiconductor cleaning process has been described as an example. The present invention may also be used in a rotary etching apparatus and the like.

In the above, the configuration and operation of the substrate processing apparatus according to the present invention have been shown in accordance with the above description and drawings, but this is merely an example, and various changes and modifications can be made without departing from the technical spirit of the present invention. Of course.

As described above, the present invention enables rapid substrate drying.

In addition, the present invention can indirectly spray the drying fluid onto the substrate to maintain the laminar airflow as a whole, and uniformly maintain the concentration distribution of the drying fluid.

In addition, the present invention can prevent the foreign matter falling to the substrate because the indirect injection nozzle is directed upward.

In addition, the present invention can protect the substrate with an external contaminant during substrate drying.

In addition, the present invention can minimize the water spots generated during the substrate drying process.

In addition, the present invention can minimize the influence from the external environment during substrate drying.

In addition, the present invention can prevent the substrate from contacting air.

In addition, the present invention can minimize the concentration and temperature change of the fluid supplied for substrate drying.

In addition, the present invention is very excellent in the air blocking efficiency to the outside when the chamber is sealed.

Claims (7)

delete In the substrate processing apparatus: A substrate support member having a chuck on which the substrate is placed; A lower chamber having an upper portion open and shaped to surround the chuck; An upper chamber that opens or closes an upper portion of the lower chamber so that a drying process for the substrate is performed in an isolated state from the outside; And a sealing member installed on the contact surface where the lower chamber and the upper chamber contact each other to maintain airtightness from the outside; The sealing member is installed on the contact surface of the upper chamber, the substrate processing apparatus, characterized in that the pad portion having at least one uneven portion so that the penetration path of the outside air is refracted. The method of claim 2, And the lower chamber includes loop-shaped protrusions to increase an area of the contact surface in contact with the sealing member and to penetrate a penetration path of air that may be introduced from the outside. In the substrate processing apparatus: A substrate support member having a chuck on which the substrate is placed; A lower chamber having an upper portion open and shaped to surround the chuck; An upper chamber that opens or closes an upper portion of the lower chamber so that a drying process for the substrate is performed in an isolated state from the outside; And a sealing member installed on the contact surface where the lower chamber and the upper chamber contact each other to maintain airtightness from the outside; The lower chamber includes loop-shaped protrusions to increase an area of the contact surface in contact with the sealing member and to penetrate the penetration path of air that can be introduced from the outside. The sealing member is disposed on the contact surface of the upper chamber, characterized in that the substrate processing apparatus comprising a pad portion having a sealing groove into which the projections are inserted. The method according to claim 2 or 4, The sealing member further comprises a wing extending from the outside of the pad portion in contact with the side of the lower chamber. In the substrate processing apparatus: A substrate support member having a chuck on which the substrate is placed; A lower chamber having an upper portion open and shaped to surround the chuck; An upper chamber that opens or closes an upper portion of the lower chamber so that a drying process for the substrate is performed in an isolated state from the outside; A sealing member installed on a contact surface where the lower chamber and the upper chamber abut against each other to maintain airtightness from the outside; And And an indirect injection nozzle installed at an edge of the upper chamber and injecting the drying fluid toward the center of the upper chamber so that the drying fluid is indirectly injected onto the substrate. The method of claim 6, The upper chamber An annular space for guiding the dry fluid injected from the indirect spray nozzle toward the center of the upper chamber; A central opening through which the drying fluid, collected along the annular space toward the center of the upper chamber, exits toward the substrate; And And a guide surface for guiding the drying fluid such that the drying fluid exiting through the central opening gradually diffuses from the center of the substrate to the edge.

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