JP2004179429A - Substrate surface treatment processing apparatus - Google Patents

Substrate surface treatment processing apparatus Download PDF

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Publication number
JP2004179429A
JP2004179429A JP2002344551A JP2002344551A JP2004179429A JP 2004179429 A JP2004179429 A JP 2004179429A JP 2002344551 A JP2002344551 A JP 2002344551A JP 2002344551 A JP2002344551 A JP 2002344551A JP 2004179429 A JP2004179429 A JP 2004179429A
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Prior art keywords
substrate
surface treatment
substrate surface
treatment apparatus
nozzle plate
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JP2002344551A
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JP4171642B2 (en
Inventor
Mitsuo Ito
美津夫 伊藤
Masashi Omori
雅司 大森
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SPC Electronics Corp
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SPC Electronics Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate surface treatment processing apparatus for attaining excellent processing by adjusting a distance between a substrate and a nozzle plate in response to each of an ozone processing processes and a pure water processing process or the like in a processing tank. <P>SOLUTION: The substrate surface treatment processing apparatus for performing chemical processing on the surface of the substrate 1 by chemicals including ozone and cleaning processing of the substrate 1 by a cleaning liquid is provided with a lower base 20 for pivotally supporting a support 22 for supporting the substrate 1 turnably, an upper base 10 placed at an upper part of the lower base 20 and vertically elevated / descended, and a nozzle plate 14 supported by the upper base 10 and extended on the substrate 1 to jet the chemicals and the cleaning liquid. The distance between the nozzle plate 14 and the substrate 1 is adjustable in response to the chemical processing or the cleaning processing by making either or both of the support 22 and the nozzle plate 14 supported by the upper base 10 and the lower base 20 vertically movable. <P>COPYRIGHT: (C)2004,JPO

Description

【0001】
【発明の属する技術分野】
本発明は基板表面処理装置に係り、より詳細には、IC、LSI等に代表される半導体基板やガラス基板、プリント基板における例えばフォトレジスト膜や有機化合物あるいは無機化合物などの被処理物を除去して洗浄する基板表面処理装置に関する。
【0002】
【従来の技術】
【特許文献1】
特開2001−223206号公報(第4−6頁、第1図)
【0003】
従来、基板表面処理装置は、例えば、IC、LSI等の半導体装置の製造工程をはじめとする微細加工工程において、半導体基板(シリコンウェハ等)やガラス基板(LCD)、プリント基板におけるフォトレジスト膜や有機化合物あるいは無機化合物などの被処理物を除去して洗浄する操作に採用されており、通常、薬剤による湿式法(例えば、特許文献1参照。)あるいは酸素プラズマ等による乾式法が用いられている。図6は、このような薬剤の湿式法による従来の基板表面処理装置の一実施形態を示す構成図である。
【0004】
図6に示すように、従来の基板表面処理装置の一実施形態は、基板1を収容する処理槽30と、この処理槽30内で平板ヒータ34を介して基板1を載置する基台36と、処理槽30内でガスの流れを制御して湿潤したオゾン(O )ガスを基板1の処理面に均一に供給するノズル板32とを備えている。このノズル板32は、図示していないが例えば温水を流通したり、あるいはヒータ等の加熱機構が設けられている。また、ノズル板32は、処理槽30の外部からオゾンガスを加湿する加湿器41と、オゾンガスを発生させるオゾンガス発生器42とを送気管39により接続しており、この送気管39をリボンヒータ43により加熱してオゾンガスを供給するように形成している。また、送気管39には、圧力を加える窒素タンク46と、基板1のオゾン処理後に純水を供給する純水タンク44と、送水のためのポンプ45とを各々接続している。そして、処理槽30には、オゾンガスを排気する排気管37、排気量を調整する為のバルブ38が設けられている。尚、各部材のオゾンガスに直接曝される部分には耐オゾン性の高い材料、例えば石英ガラスやフッ素樹脂等が用いられている。また、図示していないが、排気管37にはオゾン分解装置が結合されている。
【0005】
このように形成した従来の基板表面処理装置の一実施形態は、まず、基板1を基台36上に平板ヒータ34を介して載置し、この平板ヒータ34により所定の温度まで加熱する。また、加湿器41、送気管39、ノズル板32も予め加熱し基板1の温度設定値以上の温度に安定化させておく。基板1の温度が安定した時点で、オゾンガスを加湿器41内に通過させて湿度を混入し、この湿潤したオゾンガスを基板1の表面に供給(噴射)して表面の被処理物を分解する薬液処理を行う。そして、所定時間の処理によって被処理物が分解された後は、湿潤したオゾンガスの供給を停止し、ポンプ45および純水タンク44を用いて基板1の表面をリンスする洗浄処理を行って分解物等を除去する。次いで、窒素ボンベ46より窒素ガスを供給して基板1の乾燥を行う。
【0006】
このように従来の基板表面処理装置は、基板1の表面を処理する薬剤にオゾン(O )ガスを用いることで薬液廃棄による環境汚染を低減するとともに、平板ヒータ34及びリボンヒータ43などの加熱源により処理槽30内及びオゾンガス等の温度を一定条件に調整することで、良好な処理を実現していた。
【0007】
【発明が解決しようとする課題】
しかしながら、従来の基板表面処理装置では、処理槽30内のノズル板32を固定しているため、例えば、処理槽30内でのオゾンガスによる薬液処理時にノズル板32と基板1との距離が離れた状態で固定されると、薬剤を多く使用するとともに、処理に時間かかるという不具合があった。
また、従来の基板表面処理装置では、前述したように処理槽30内にノズル板32を固定しているため、例えば、純水による洗浄(リンス)処理時に基板1とノズル板32とを一定の距離で離すことが好ましく、この距離が前述した薬液処理用に狭い状態で固定されると、基板1の表面を全体的に洗浄することが困難になるとともに、ノズル板32表面の汚染が水を介して基板1に伝わるという不具合が考えられる。又、液の粘性によって回転時の負荷抵抗が増し、基板1の保持力が損なわれ、基台36から外れる場合もある。
本発明はこのような課題を解決し、処理槽内でオゾンまたは純水等の各処理工程に応じて基板とノズル板との距離を調整して良好に処理できる基板表面処理装置を提供することを目的とする。
【0008】
【課題を解決するための手段】
本発明は上述の課題を解決するために、オゾンを含んだ薬剤による基板表面の薬液処理及び洗浄液による前記基板の洗浄処理を行う基板表面処理装置であって、基板を保持する保持部を回転可能に軸支した下部基台と、この下部基台の上部に配置されて上下に昇降する上部基台と、この上部基台に支持されて基板上に延在して薬剤及び洗浄液を各々噴出するノズル板とを備え、上部基台及び下部基台に支持した保持部またはノズル板のいずれか一方或いは両方を上下動可能にすることでノズル板と基板との距離を薬液処理または洗浄処理に応じて調節可能に設ける。
【0009】
ここで、下部基台は、上部基台が昇降動作することでお互いに嵌合して基板を内部に密閉することが好ましい。また、基板は、ノズル板または保持部の上下動により、ノズル板及び基板間の距離を狭めて隙間内の容積を縮小した状態で薬液処理し、その後、この距離を広げて容積を拡大した状態で洗浄処理することが好ましい。また、保持部は、基板を保持して回転する回転数を調節可能に設けることが好ましい。また、ノズル板は、オゾンガス及びホットエアを供給する第1供給口と、アンモニアガス及びホットDIWを供給する第2供給口とを備え、この各供給口から裏側に貫通する複数の噴出孔を設けて基板に対向させることが好ましい。また、ノズル板は、基板の薬液処理時に薬剤として第1供給口からのオゾンガスと第2供給口からのアンモニアガスとを同時または交互に供給して処理した後、ホットエア及びホットDIWを供給して噴出孔をフラッシングし、この動作を少なくとも1回以上行うことが好ましい。また、ノズル板の他の実施例は、基板の薬液処理時に薬剤として第1供給口からのオゾンガスのみを供給して処理した後、ホットエアを供給して噴出孔をフラッシングし、この動作を少なくとも1回以上行うことが好ましい。また、ノズル板は、薬液処理後の洗浄処理時に洗浄液として第2供給口からホットDIWを供給して洗浄処理することが好ましい。また、ノズル板は、洗浄処理後に第1供給口からホットエアを供給して基板を乾燥することが好ましい。また、ノズル板には、加熱源を設けることが好ましい。また、ノズル板は、基板に対向する裏面に中心から外側に向かって放射状に延在して水滴を外周に誘導する水滴防止用の溝を複数形成することが好ましい。また、上部基台は、ノズル板が上下動する下端に外側に向かって球面状に形成した曲面を有し、前記ノズル板から水滴を外側の内周壁に誘導することが好ましい。また、下部基台は、ホットエアを供給可能に設けることが好ましい。
【0010】
【発明の実施の形態】
次に、添付図面を参照して本発明による基板表面処理装置の実施の形態を詳細に説明する。図1は、本発明による基板表面処理装置の一実施形態を示す構成図である。また、図2は、図1に示したA−A線の断面を示す図である。また、図3は、図1に示したノズル板14の底面を示す図である。また、図4は、図3に示したノズル板14の溝14bによる水滴の除去動作を示す図である。また、図5は、図1に示した基板表面処理装置の処理動作を示す図であり、図5(a)は薬液処理時の動作を、図5(b)は洗浄処理時の動作を各々示している。
【0011】
図1に示すように、本発明による基板表面処理装置の一実施形態は、図6に示した従来技術と同様に、オゾンを含んだ薬剤による薬液処理及び基板の純水による洗浄処理を行う湿式法の処理装置に採用しており、基板1を真空吸着パットで保持する保持部22を回転可能に軸支した下部基台20と、この下部基台20の上部に配置されて上下に昇降する上部基台10と、この上部基台10に支持されて基板1上に延在してオゾンガス及び純水の流れを制御して均一に各々噴出するノズル板14とを備えている。
【0012】
ここで、本実施の形態は、図6に示した従来技術とは異なり、上部基台10及び下部基台20に支持した保持部22及びノズル板14の両方を上下動可能にすることで、ノズル板14と基板1との距離を薬液処理または洗浄処理に応じて調節可能に設けている。この保持部22とノズル板14とは、両方を上下動可能にすることに限定されるものではなく、例えば、いずれか一方のみを上下動可能にしてノズル板14と基板1との距離を調節しても良い。また、ノズル板14は、伝導熱の高い材質で形成して上部に加熱源12を設けるとともに、湿潤したオゾン(O )ガス及びホットエアを供給する第1供給口16と、湿潤したアンモニア(NH )ガス及びホットDIW(純水)を供給する第2供給口18とを備えている。
【0013】
この第1供給口16と第2供給口18とは、図2及び3に示すように、ノズル板14の裏側に向かって貫通する複数の噴出孔14aを設けて基板1に対向させている。また、ノズル板14は、図2に示したように、基板1の薬液処理時に薬剤として第1供給口16からのオゾンガスと第2供給口18からのアンモニアガスとを同時または交互に供給して処理した後、ホットエア及びホットDIWを供給して噴出孔14aに残留する生成物をフラッシングし、この動作を少なくとも1回以上行って処理する。ここで、薬剤の供給は、第1供給口16及び第2供給口18からオゾンガスとアンモニアガスとを供給することに限定されず、例えば、アルカリ性に対して弱い処理体に対してはオゾンガスのみを供給して処理しても良い。また、ノズル板14は、薬液処理後の洗浄処理時に第2供給口18からホットDIWを供給して処理するとともに、この洗浄処理後に第1供給口16からホットエアを供給して基板1を乾燥する。また、ノズル板14は、図3に示したように、基板1に対向する裏面に中心から外側に向かって放射状に延在して水滴を外周に誘導する水滴防止用の溝14bを複数形成している。この溝14bは、ノズル板14の中心から外周に向かって段階的に溝数が増えるように形成されている。従って、ノズル板14は、図4に示すように、底面に付着する水滴2を溝14aによる毛細管現象により外側に誘導して排出できる構造を備えている。また、ノズル板14は、第1供給口16及び第2供給口18から各々底部に貫通する中心側の噴出孔14aを中心に傾けて形成しており、保持部22の軸回転により基板1の表面で薬剤が中心から外側に拡散する中心に向けて噴出可能に形成している。
【0014】
再び、図2を参照して、下部基台20は、上部基台10が昇降動作することで、お互いに嵌合して基板1を内部に密閉できるように形成している。この密閉した内部で基板1は、ノズル板14または保持部22の上下動により、ノズル板14及び基板1間の距離を狭めて隙間内の容積を縮小した状態で薬液処理し、その後、この距離を広げて容積を拡大した状態で洗浄処理する。従って、本実施の形態では、図6に示した従来技術のようにノズル板14及び保持部22を固定しないため、薬液処理または洗浄処理等の各処理工程に応じて基板1とノズル板14との距離を調整して良好に処理することができる。また、保持部22は、基板1を保持して回転する回転数を調節可能に設けている。そして、下部基台20には、外側から保持部22の外側を介してホットエアを供給する供給口20aを設けており、ホットエアの供給で内部を一定の温度に保つとともに、薬液処理時にオゾンガスまたはアンモニアガスなどの薬剤が基板1の底部に逃げることを防止している。また、下部基台20には、処理終了後に内部に残留するガスなどの薬剤または純水などの水滴を排気または廃液するための排出口20bを設けている。さらに、上部基台10は、図4に示したノズル板14が上下動する下端に外側に向かって球面状に形成した曲面10aを有し、この曲面10aによりノズル板14から水滴2を受けて外側の内周壁に誘導し易く設けている。従って、水滴2は、基板1上に付着することなく上部基台10の内壁に沿って下端に誘導され、図2に示した下部基台20の排出口20bから廃液される。
【0015】
このように形成した本発明による基板表面処理装置の一実施形態は、まず、上部基台10と下部基台20とが離れた状態で基板1を保持部22の真空吸着パットで保持した後、上部基台10を降下させて下部基台20に嵌合させることで基板1を内部に密閉(封止)する。そして、ノズル板14に第1供給口16と下部基台20の供給口20aとからホットエアを供給して内部を予め加熱し、基板1の温度設定値以上の温度に安定化させておく。この際、密閉した内部において、ノズル板14または保持部22いずれか一方或いは両方を上下動することで、基板1とノズル板14との間の距離を狭めて薬液処理を良好に行える状態に設定する。
【0016】
ここで、例えば、ノズル板14を降下させた場合、図5(a)に示すように、基板1との距離を狭めて隙間内の容積が縮小するように近接して薬液処理し易い状態に設定される。そして、基板1の温度が安定した時点で、保持部22を所定の回転数で回転させ、第1供給口16と第2供給口18とから湿潤したオゾンガス及びアンモニアガスを基板1の表面に供給(噴射)して回転により表面の被処理物を分解する薬液処理を行う。また、所定時間の処理を終えて被処理物を分解した後は、オゾンガス及びアンモニアガスの供給を停止するとともに、第1供給口16と第2供給口18とからホットエア及びホットDIWを供給して噴出孔14a内に残留する生成物をフラッシングする。そして、前述の動作を基板1の被処理物が分解する状況に応じて、少なくとも1回以上繰り返すことで確実に処理する。
【0017】
また、薬液処理が終了すると、図5(b)に示すように、ノズル板14を上昇させることで、基板1とノズル板14との間の距離を広めて洗浄処理を良好に行える状態に設定する。その後、ノズル板14は、第2供給口18からホットDIWを供給することで、基板1の表面をリンスする洗浄処理を行って薬液処理での分解物等を除去する。この際、基板1を処理した純水は、下部基台20内を介して排出口20bから排液されて廃棄される。また、洗浄処理が終了すると、ホットDIWの供給を停止し、第1供給口16及び下部基台20の供給口20aから同時にホットエアを供給することで乾燥処理を行う。
【0018】
このように、本発明による基板表面処理装置の一実施形態によると、図5(a)に示すように、上部基台10のノズル板14(或いは保持部22)を上下動可能に設けて薬液処理時に基板1との距離を狭めた状態に設定できるため、オゾンガス及びアンモニアガスなどの薬剤の使用を低減でき、基板表面の被処理物を短時間で分解することが可能になる。また、本実施の形態では、ノズル板14を降下させることで上部基台10と下部基台20との密閉した内部容積を同時に縮小できるため、より効果的に薬剤の使用量を低減できる。
また、本発明による基板表面処理装置の一実施形態によると、図5(b)に示すように、ノズル板14を上昇(或いは保持部22を降下)させて純水による洗浄処理時に基板1との距離を広げた状態に設定できるため、基板1の表面を全体的に洗浄でき、ノズル板14表面の汚染が水を介して基板1に伝わることがなく、且つ、液の粘性によって基板1が保持部22から外れることがなくなる。
【0019】
以上、本発明による基板表面処理装置の実施の形態を詳細に説明したが、本発明は前述した実施の形態に限定されるものではなく、その要旨を逸脱しない範囲で変更可能である。
例えば、薬剤に湿潤したオゾンガス及びアンモニアガスを用いた実施例を説明したが、これに限定されるものではなく、オゾンを含む液体の薬剤を直接ノズル板から噴出させて湿式処理することもできる。
また、洗浄処理時に純水による洗浄液を用いた実施例を説明したが、これに限定されるものではなく、例えば、アルコール、酸性水溶液、アルカリ性溶液などの洗浄液でもよい。
【0020】
【発明の効果】
このように本発明による基板表面処理装置によれば、処理槽内でオゾンまたは純水等の各処理工程に応じて基板とノズル板との距離を調整して良好に処理することが可能になる。
【図面の簡単な説明】
【図1】本発明による基板表面処理装置の一実施形態を示す構成図。
【図2】図1に示したA−A線の断面を示す図。
【図3】図1に示したノズル板の底面を示す図。
【図4】図3に示したノズル板の溝による水滴の除去動作を示す図。
【図5】図1に示した基板表面処理装置の処理動作を示す図。
【図6】従来の基板表面処理装置の一実施形態を示す構成図。
【符号の説明】
1 基板
10 上部基台
10a 曲面
12 加熱源
14 ノズル板
14a 噴出孔
14b 溝
16 第1供給口
18 第2供給口
20 下部基台
20a 供給口
20b 排出口
22 保持部
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a substrate surface treatment apparatus, and more specifically, removes an object to be treated such as a photoresist film or an organic compound or an inorganic compound in a semiconductor substrate, a glass substrate, and a printed substrate typified by an IC and an LSI. The present invention relates to a substrate surface treating apparatus for cleaning.
[0002]
[Prior art]
[Patent Document 1]
JP 2001-223206A (Pages 4-6, FIG. 1)
[0003]
2. Description of the Related Art Conventionally, a substrate surface treatment apparatus has been used, for example, in a fine processing step including a manufacturing step of a semiconductor device such as an IC or an LSI, a photoresist film on a semiconductor substrate (a silicon wafer or the like), a glass substrate (LCD), a printed board, or the like. It is used for an operation of removing and cleaning an object to be treated such as an organic compound or an inorganic compound, and is usually a wet method using a chemical (for example, see Patent Document 1) or a dry method using oxygen plasma or the like. . FIG. 6 is a configuration diagram showing an embodiment of a conventional substrate surface treatment apparatus using such a chemical wet method.
[0004]
As shown in FIG. 6, one embodiment of a conventional substrate surface treatment apparatus includes a processing tank 30 for housing a substrate 1 and a base 36 on which the substrate 1 is placed via a flat plate heater 34 in the processing tank 30. And a nozzle plate 32 that controls the flow of gas in the processing tank 30 to uniformly supply the ozone (O 3 ) gas wet to the processing surface of the substrate 1. Although not shown, the nozzle plate 32 is provided with, for example, hot water, or a heating mechanism such as a heater. Further, the nozzle plate 32 connects a humidifier 41 for humidifying ozone gas from the outside of the processing tank 30 and an ozone gas generator 42 for generating ozone gas by an air supply pipe 39, and the air supply pipe 39 is connected by a ribbon heater 43. It is formed so as to supply ozone gas by heating. Further, a nitrogen tank 46 for applying pressure, a pure water tank 44 for supplying pure water after ozone treatment of the substrate 1, and a pump 45 for water supply are connected to the air supply pipe 39. The processing tank 30 is provided with an exhaust pipe 37 for exhausting ozone gas and a valve 38 for adjusting the exhaust amount. A material having high ozone resistance, for example, quartz glass, fluororesin, or the like is used for a portion of each member that is directly exposed to ozone gas. Although not shown, an ozone decomposing device is connected to the exhaust pipe 37.
[0005]
In one embodiment of the conventional substrate surface treating apparatus formed as described above, first, the substrate 1 is placed on the base 36 via the flat plate heater 34 and heated to a predetermined temperature by the flat plate heater 34. Further, the humidifier 41, the air supply pipe 39, and the nozzle plate 32 are also heated in advance and stabilized at a temperature equal to or higher than the temperature set value of the substrate 1. When the temperature of the substrate 1 is stabilized, the ozone gas is passed through the humidifier 41 to mix in humidity, and the wet ozone gas is supplied (sprayed) to the surface of the substrate 1 to decompose the object to be processed on the surface. Perform processing. Then, after the object is decomposed by the treatment for a predetermined time, the supply of the wet ozone gas is stopped, and a cleaning process of rinsing the surface of the substrate 1 using the pump 45 and the pure water tank 44 is performed, thereby performing the decomposition. Etc. are removed. Next, the substrate 1 is dried by supplying a nitrogen gas from the nitrogen cylinder 46.
[0006]
As described above, the conventional substrate surface treatment apparatus uses ozone (O 3 ) gas as a chemical for treating the surface of the substrate 1, thereby reducing environmental pollution due to chemical liquid disposal and heating the flat plate heater 34 and the ribbon heater 43. By adjusting the temperature of the processing tank 30 and the temperature of the ozone gas and the like to constant conditions depending on the source, good processing has been realized.
[0007]
[Problems to be solved by the invention]
However, in the conventional substrate surface treatment apparatus, since the nozzle plate 32 in the processing tank 30 is fixed, for example, the distance between the nozzle plate 32 and the substrate 1 is large at the time of the chemical treatment with the ozone gas in the processing tank 30. When fixed in a state, there is a problem that a lot of medicine is used and it takes time to process.
Further, in the conventional substrate surface treatment apparatus, since the nozzle plate 32 is fixed in the treatment tank 30 as described above, for example, the substrate 1 and the nozzle plate 32 are fixed at a certain time during the cleaning (rinsing) treatment with pure water. If the distance is fixed in a narrow state for the above-described chemical treatment, it becomes difficult to clean the entire surface of the substrate 1 and contamination on the surface of the nozzle plate 32 reduces water. There is a problem that the signal is transmitted to the substrate 1 through the substrate. Further, the load resistance at the time of rotation increases due to the viscosity of the liquid, the holding force of the substrate 1 is impaired, and the substrate 1 may come off from the base 36.
The present invention solves such a problem and provides a substrate surface treatment apparatus capable of adjusting a distance between a substrate and a nozzle plate in accordance with each treatment step such as ozone or pure water in a treatment tank and performing satisfactory treatment. With the goal.
[0008]
[Means for Solving the Problems]
The present invention is directed to a substrate surface treatment apparatus that performs a chemical treatment of a substrate surface with a chemical containing ozone and a cleaning treatment of the substrate with a cleaning liquid in order to solve the above-described problem, and a holding unit that holds the substrate is rotatable. A lower base that is pivotally supported on the lower base, an upper base that is disposed above the lower base and that moves up and down, and that is supported by the upper base and extends on the substrate to eject a medicine and a cleaning liquid, respectively. A nozzle plate is provided, and the distance between the nozzle plate and the substrate can be changed according to the chemical solution treatment or the cleaning process by allowing one or both of the holding portion and the nozzle plate supported by the upper base and the lower base to be vertically movable. To be adjustable.
[0009]
Here, it is preferable that the lower bases fit into each other as the upper base moves up and down to hermetically seal the substrate inside. In addition, the substrate is subjected to chemical treatment in a state in which the distance between the nozzle plate and the substrate is reduced by the vertical movement of the nozzle plate or the holding portion and the volume in the gap is reduced, and then the distance is increased to increase the volume. It is preferable to carry out a washing treatment. In addition, it is preferable that the holding unit is provided so as to be able to adjust the number of rotations for holding and rotating the substrate. The nozzle plate has a first supply port for supplying ozone gas and hot air, and a second supply port for supplying ammonia gas and hot DIW. A plurality of ejection holes penetrating from the supply ports to the back side are provided. It is preferable to face the substrate. In addition, the nozzle plate supplies ozone gas from the first supply port and ammonia gas from the second supply port simultaneously or alternately as chemicals during processing of the substrate with the chemical liquid, and then supplies hot air and hot DIW. It is preferable to flush the ejection holes and perform this operation at least once or more. Further, in another embodiment of the nozzle plate, only the ozone gas is supplied from the first supply port as a chemical at the time of chemical treatment of the substrate, and then the hot air is supplied to flush the ejection holes. It is preferable to perform it more than once. Further, it is preferable that the nozzle plate be cleaned by supplying hot DIW from the second supply port as a cleaning liquid during the cleaning process after the chemical solution process. The nozzle plate preferably supplies hot air from the first supply port after the cleaning process to dry the substrate. Further, it is preferable to provide a heating source on the nozzle plate. In addition, it is preferable that the nozzle plate has a plurality of grooves for preventing water droplets extending radially from the center to the outside on the back surface facing the substrate and guiding the water droplets to the outer periphery. Preferably, the upper base has a curved surface formed in a spherical shape toward the outside at the lower end where the nozzle plate moves up and down, and it is preferable that water droplets are guided from the nozzle plate to the outer inner peripheral wall. Further, it is preferable that the lower base be provided so as to be able to supply hot air.
[0010]
BEST MODE FOR CARRYING OUT THE INVENTION
Next, an embodiment of a substrate surface treatment apparatus according to the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a configuration diagram showing one embodiment of a substrate surface treatment apparatus according to the present invention. FIG. 2 is a diagram showing a cross section taken along line AA shown in FIG. FIG. 3 is a diagram showing a bottom surface of the nozzle plate 14 shown in FIG. FIG. 4 is a view showing an operation of removing water droplets by the grooves 14b of the nozzle plate 14 shown in FIG. FIGS. 5A and 5B are diagrams showing the processing operation of the substrate surface treatment apparatus shown in FIG. 1, wherein FIG. 5A shows the operation at the time of the chemical treatment, and FIG. Is shown.
[0011]
As shown in FIG. 1, one embodiment of the substrate surface treatment apparatus according to the present invention is a wet type which performs a chemical treatment with an ozone-containing chemical and a cleaning treatment of a substrate with pure water, similarly to the prior art shown in FIG. The lower base 20 rotatably supports a holding unit 22 for holding the substrate 1 with a vacuum suction pad, and is disposed above the lower base 20 and moves up and down. An upper base 10 and a nozzle plate 14 supported on the upper base 10 and extending over the substrate 1 to control the flow of ozone gas and pure water and to uniformly eject each of them are provided.
[0012]
Here, this embodiment is different from the prior art shown in FIG. 6 in that both the holding portion 22 and the nozzle plate 14 supported by the upper base 10 and the lower base 20 can be moved up and down. The distance between the nozzle plate 14 and the substrate 1 is provided so as to be adjustable according to a chemical solution treatment or a cleaning treatment. The holding part 22 and the nozzle plate 14 are not limited to be able to move both up and down. For example, only one of them can be moved up and down to adjust the distance between the nozzle plate 14 and the substrate 1. You may. Further, the nozzle plate 14 is formed of a material having high conduction heat, is provided with the heating source 12 thereon, and has a first supply port 16 for supplying wet ozone (O 3 ) gas and hot air, and a wet ammonia (NH 3 ). 3 ) A second supply port 18 for supplying gas and hot DIW (pure water) is provided.
[0013]
As shown in FIGS. 2 and 3, the first supply port 16 and the second supply port 18 are provided with a plurality of ejection holes 14 a penetrating toward the back side of the nozzle plate 14 and face the substrate 1. Further, as shown in FIG. 2, the nozzle plate 14 simultaneously or alternately supplies an ozone gas from the first supply port 16 and an ammonia gas from the second supply port 18 as chemicals during the chemical treatment of the substrate 1. After the processing, hot air and hot DIW are supplied to flush the products remaining in the ejection holes 14a, and this operation is performed at least once to perform the processing. Here, the supply of the chemical is not limited to the supply of the ozone gas and the ammonia gas from the first supply port 16 and the second supply port 18. For example, only the ozone gas is supplied to the processing body which is weak against alkalinity. It may be supplied and processed. The nozzle plate 14 supplies hot DIW from the second supply port 18 during the cleaning process after the chemical solution process, and supplies hot air from the first supply port 16 to dry the substrate 1 after the cleaning process. . As shown in FIG. 3, the nozzle plate 14 has a plurality of grooves 14b for preventing water droplets extending radially from the center to the outside and guiding water droplets to the outer periphery on the back surface facing the substrate 1. ing. The grooves 14b are formed so that the number of grooves increases stepwise from the center of the nozzle plate 14 toward the outer periphery. Therefore, as shown in FIG. 4, the nozzle plate 14 has a structure capable of guiding the water droplet 2 adhering to the bottom surface to the outside by capillary action by the groove 14a and discharging the water droplet. Further, the nozzle plate 14 is formed so as to be inclined about the center side ejection hole 14 a penetrating from the first supply port 16 and the second supply port 18 to the bottom, respectively. The surface is formed so that the medicine can be ejected from the center toward the center where the medicine diffuses outward.
[0014]
Referring again to FIG. 2, the lower base 20 is formed so that the upper base 10 moves up and down so that the lower base 20 can be fitted to each other to seal the substrate 1 inside. The substrate 1 is subjected to a chemical treatment in a state where the distance between the nozzle plate 14 and the substrate 1 is reduced by the vertical movement of the nozzle plate 14 or the holding portion 22 to reduce the volume in the gap. The washing process is carried out in a state where the volume is expanded by expanding. Therefore, in the present embodiment, since the nozzle plate 14 and the holding portion 22 are not fixed as in the related art shown in FIG. 6, the substrate 1 and the nozzle plate 14 are connected to each other in accordance with each processing step such as a chemical solution process or a cleaning process. The distance can be adjusted for good processing. Further, the holding unit 22 is provided so as to be able to adjust the number of rotations that hold and rotate the substrate 1. The lower base 20 is provided with a supply port 20a for supplying hot air from outside through the outside of the holding section 22. The inside of the lower base 20 is kept at a constant temperature by supplying hot air, and ozone gas or ammonia is supplied during chemical solution treatment. This prevents a chemical such as gas from escaping to the bottom of the substrate 1. Further, the lower base 20 is provided with an outlet 20b for exhausting or draining a chemical such as a gas remaining inside after the process is completed or a water droplet such as pure water. Further, the upper base 10 has a curved surface 10a formed in a spherical shape toward the outside at the lower end where the nozzle plate 14 shown in FIG. 4 moves up and down, and receives the water droplet 2 from the nozzle plate 14 by the curved surface 10a. It is provided on the outer inner peripheral wall so as to be easily guided. Therefore, the water droplet 2 is guided to the lower end along the inner wall of the upper base 10 without adhering to the substrate 1, and is discharged from the outlet 20b of the lower base 20 shown in FIG.
[0015]
One embodiment of the substrate surface treatment apparatus according to the present invention formed as described above first holds the substrate 1 with the vacuum suction pad of the holding unit 22 in a state where the upper base 10 and the lower base 20 are separated from each other. The substrate 1 is hermetically sealed (sealed) by lowering the upper base 10 and fitting the lower base 20. Then, hot air is supplied to the nozzle plate 14 from the first supply port 16 and the supply port 20a of the lower base 20 to heat the inside in advance, and to stabilize the temperature at or above the temperature set value of the substrate 1. At this time, by moving up or down one or both of the nozzle plate 14 and the holding portion 22 in the sealed interior, the distance between the substrate 1 and the nozzle plate 14 is reduced to set a state in which the chemical treatment can be performed well. I do.
[0016]
Here, for example, when the nozzle plate 14 is lowered, as shown in FIG. 5A, the distance between the nozzle plate 14 and the substrate 1 is reduced so that the volume in the gap is reduced so as to be in a state where the chemical solution can be easily processed. Is set. Then, when the temperature of the substrate 1 is stabilized, the holding unit 22 is rotated at a predetermined rotation speed to supply the wet ozone gas and ammonia gas from the first supply port 16 and the second supply port 18 to the surface of the substrate 1. (Injection) and a chemical solution treatment for decomposing the object to be treated on the surface by rotation. After the processing for a predetermined time is completed and the object to be processed is decomposed, supply of ozone gas and ammonia gas is stopped, and hot air and hot DIW are supplied from the first supply port 16 and the second supply port 18. The product remaining in the ejection hole 14a is flushed. Then, the above operation is repeated at least once or more in accordance with the situation in which the object to be processed of the substrate 1 is decomposed, so that the processing is surely performed.
[0017]
When the chemical treatment is completed, as shown in FIG. 5B, the distance between the substrate 1 and the nozzle plate 14 is increased by raising the nozzle plate 14 so that the cleaning process can be performed satisfactorily. I do. Thereafter, the nozzle plate 14 supplies hot DIW from the second supply port 18 to perform a cleaning process for rinsing the surface of the substrate 1 to remove decomposed products and the like in the chemical solution process. At this time, the pure water obtained by treating the substrate 1 is discharged from the outlet 20b through the lower base 20, and is discarded. When the cleaning process is completed, the supply of the hot DIW is stopped, and the drying process is performed by simultaneously supplying the hot air from the first supply port 16 and the supply port 20a of the lower base 20.
[0018]
As described above, according to one embodiment of the substrate surface treatment apparatus according to the present invention, as shown in FIG. 5A, the nozzle plate 14 (or the holding portion 22) of the upper base 10 is provided so as to be able to move up and down, and Since the distance from the substrate 1 during processing can be set to be small, the use of chemicals such as ozone gas and ammonia gas can be reduced, and the object to be processed on the substrate surface can be decomposed in a short time. Further, in the present embodiment, by lowering the nozzle plate 14, the sealed internal volumes of the upper base 10 and the lower base 20 can be reduced at the same time, so that the amount of medicine used can be reduced more effectively.
Further, according to an embodiment of the substrate surface treatment apparatus according to the present invention, as shown in FIG. 5B, the nozzle plate 14 is raised (or the holding portion 22 is lowered) so that the substrate 1 and the substrate 1 are cleaned during the cleaning process with pure water. Can be set in a state where the distance of the nozzle plate 14 is widened, the surface of the substrate 1 can be entirely cleaned, the contamination of the surface of the nozzle plate 14 is not transmitted to the substrate 1 via water, and the viscosity of the liquid makes the substrate 1 It does not come off from the holding part 22.
[0019]
As described above, the embodiments of the substrate surface treatment apparatus according to the present invention have been described in detail. However, the present invention is not limited to the above-described embodiments, and can be changed without departing from the gist thereof.
For example, although the embodiment using the ozone gas and the ammonia gas moistened in the medicine has been described, the invention is not limited to this, and the wet treatment can be performed by directly ejecting the liquid medicine containing ozone from the nozzle plate.
Further, although the embodiment using the cleaning liquid with pure water at the time of the cleaning process has been described, the present invention is not limited to this, and a cleaning liquid such as an alcohol, an acidic aqueous solution, or an alkaline solution may be used.
[0020]
【The invention's effect】
As described above, according to the substrate surface treatment apparatus of the present invention, it is possible to perform favorable treatment by adjusting the distance between the substrate and the nozzle plate according to each treatment step such as ozone or pure water in the treatment tank. .
[Brief description of the drawings]
FIG. 1 is a configuration diagram showing an embodiment of a substrate surface treatment apparatus according to the present invention.
FIG. 2 is a view showing a cross section taken along line AA shown in FIG. 1;
FIG. 3 is a diagram showing a bottom surface of the nozzle plate shown in FIG. 1;
FIG. 4 is a view showing an operation of removing water droplets by a groove of a nozzle plate shown in FIG. 3;
FIG. 5 is a view showing a processing operation of the substrate surface processing apparatus shown in FIG. 1;
FIG. 6 is a configuration diagram showing one embodiment of a conventional substrate surface treatment apparatus.
[Explanation of symbols]
1 Substrate 10 Upper base 10a Curved surface 12 Heat source 14 Nozzle plate 14a Spout hole 14b Groove 16 First supply port 18 Second supply port 20 Lower base 20a Supply port 20b Discharge port 22 Holding section

Claims (13)

オゾンを含んだ薬剤による基板表面の薬液処理及び洗浄液による前記基板の洗浄処理を行う基板表面処理装置において、
前記基板を保持する保持部を回転可能に軸支した下部基台と、
前記下部基台の上部に配置されて上下に昇降する上部基台と、
前記上部基台に支持されて前記基板上に延在して前記薬剤及び洗浄液を各々噴出するノズル板とを備え、
前記上部基台及び下部基台に支持した前記保持部またはノズル板のいずれか一方或いは両方を上下動可能にすることで、前記ノズル板と前記基板との距離を前記薬液処理または洗浄処理に応じて調節可能に設けたことを特徴とする基板表面処理装置。
In a substrate surface treatment apparatus that performs a chemical treatment of the substrate surface with a chemical containing ozone and a cleaning treatment of the substrate with a cleaning liquid,
A lower base rotatably supporting a holding unit for holding the substrate,
An upper base that is arranged above the lower base and that moves up and down,
A nozzle plate that is supported by the upper base and extends on the substrate and ejects the medicine and the cleaning liquid, respectively.
By allowing one or both of the holding portion and the nozzle plate supported by the upper base and the lower base to be able to move up and down, the distance between the nozzle plate and the substrate can be changed according to the chemical treatment or the cleaning treatment. A substrate surface treatment apparatus, which is provided so as to be adjustable.
請求項1に記載の基板表面処理装置において、
前記下部基台は、前記上部基台が昇降動作することでお互いに嵌合して前記基板を内部に密閉(封止)することを特徴とする基板表面処理装置。
The substrate surface treatment apparatus according to claim 1,
The substrate surface treatment apparatus, wherein the lower base is fitted to each other as the upper base moves up and down to hermetically seal (sealing) the substrate inside.
請求項2に記載の基板表面処理装置において、
前記基板は、前記ノズル板または前記保持部の上下動により、前記ノズル板及び基板間の距離を狭めて隙間内の容積を縮小した状態で薬液処理し、その後、この距離を広げて前記容積を拡大した状態で洗浄処理することを特徴とする基板表面処理装置。
The substrate surface treatment apparatus according to claim 2,
The substrate is subjected to a chemical treatment in a state in which the distance between the nozzle plate and the substrate is reduced by the vertical movement of the nozzle plate or the holding portion and the volume in the gap is reduced, and then the distance is increased to increase the volume. A substrate surface treatment apparatus that performs a cleaning process in an enlarged state.
請求項1乃至3のいずれかに記載の基板表面処理装置において、
前記保持部は、前記基板を保持して回転する回転数を調節可能に設けたことを特徴とする基板表面処理装置。
The substrate surface treatment apparatus according to any one of claims 1 to 3,
The substrate surface treatment apparatus, wherein the holding unit is provided so as to be able to adjust the number of rotations that hold and rotate the substrate.
請求項1乃至4のいずれかに記載の基板表面処理装置において、
前記ノズル板は、オゾン(O )ガス及びホットエアを供給する第1供給口と、アンモニア(NH )ガス及びホットDIWを供給する第2供給口とを備え、この各供給口から裏側に貫通する複数の噴出孔を設けて前記基板に対向させたことを特徴とする基板表面処理装置。
The substrate surface treatment apparatus according to any one of claims 1 to 4,
The nozzle plate has a first supply port for supplying ozone (O 3 ) gas and hot air, and a second supply port for supplying ammonia (NH 3 ) gas and hot DIW, and penetrates from each supply port to the back side. A substrate surface treatment apparatus characterized in that a plurality of ejection holes are provided to face the substrate.
請求項5に記載の基板表面処理装置において、
前記ノズル板は、前記基板の薬液処理時に薬剤として前記第1供給口からのオゾンガスと前記第2供給口からのアンモニアガスとを同時または交互に供給して処理した後、前記ホットエア及びホットDIWを供給して前記噴出孔をフラッシングし、この動作を少なくとも1回以上行うことを特徴とする基板表面処理装置。
The substrate surface treatment apparatus according to claim 5,
The nozzle plate is configured to simultaneously or alternately supply the ozone gas from the first supply port and the ammonia gas from the second supply port as chemicals during the chemical treatment of the substrate, and then process the hot air and hot DIW. A substrate surface treatment apparatus comprising: supplying and flushing the ejection holes; and performing this operation at least once.
請求項5に記載の基板表面処理装置において、
前記ノズル板は、前記基板の薬液処理時に薬剤として前記第1供給口からオゾンガスのみを供給して処理した後、前記ホットエアを供給して前記噴出孔をフラッシングし、この動作を少なくとも1回以上行うことを特徴とする基板表面処理装置。
The substrate surface treatment apparatus according to claim 5,
The nozzle plate supplies and processes only the ozone gas from the first supply port as a chemical during the chemical treatment of the substrate, and then supplies the hot air to flush the ejection holes, and performs this operation at least once. A substrate surface treatment apparatus characterized by the above-mentioned.
請求項6または7に記載の基板表面処理装置において、
前記ノズル板は、前記薬液処理後の洗浄処理時に前記洗浄液として前記第2供給口からホットDIWを供給して洗浄処理することを特徴とする基板表面処理装置。
The substrate surface treatment apparatus according to claim 6 or 7,
The substrate surface treatment apparatus, wherein the nozzle plate performs a cleaning process by supplying hot DIW from the second supply port as the cleaning solution during the cleaning process after the chemical solution process.
請求項6または7に記載の基板表面処理装置において、
前記ノズル板は、前記洗浄処理後に前記第1供給口からホットエアを供給して前記基板を乾燥することを特徴とする基板表面処理装置。
The substrate surface treatment apparatus according to claim 6 or 7,
The substrate surface treatment apparatus, wherein the nozzle plate supplies hot air from the first supply port after the cleaning process to dry the substrate.
請求項1乃至9のいずれかに記載の基板表面処理装置において、
前記ノズル板には、加熱源(ヒータ等)を設けたことを特徴とする基板表面処理装置。
The substrate surface treatment apparatus according to any one of claims 1 to 9,
A substrate surface treatment apparatus, wherein a heating source (a heater or the like) is provided on the nozzle plate.
請求項1乃至10のいずれかに記載の基板表面処理装置において、
前記ノズル板は、前記基板に対向する裏面に中心から外側に向かって放射状に延在して水滴を外周に誘導する水滴防止用の溝を複数形成したことを特徴とする基板表面処理装置。
The substrate surface treatment apparatus according to any one of claims 1 to 10,
The substrate surface treatment apparatus according to claim 1, wherein the nozzle plate has a plurality of grooves for preventing water droplets extending radially from the center to the outside on the back surface facing the substrate to guide the water droplets to the outer periphery.
請求項1乃至11のいずれかに記載の基板表面処理装置において、
前記上部基台は、前記ノズル板が上下動する下端に外側に向かって球面状に形成した曲面を有し、前記ノズル板から水滴を外側の内周壁に誘導することを特徴とする基板表面処理装置。
The substrate surface treatment apparatus according to any one of claims 1 to 11,
The substrate surface treatment, wherein the upper base has a curved surface formed in a spherical shape toward the outside at a lower end where the nozzle plate moves up and down, and guides water droplets from the nozzle plate to an outer inner peripheral wall. apparatus.
請求項1乃至12のいずれかに記載の基板表面処理装置において、
前記下部基台は、ホットエアを供給可能に設けたことを特徴とする基板表面処理装置。
The substrate surface treatment apparatus according to any one of claims 1 to 12,
The substrate surface treatment apparatus, wherein the lower base is provided so as to be able to supply hot air.
JP2002344551A 2002-11-27 2002-11-27 Substrate surface treatment equipment Expired - Fee Related JP4171642B2 (en)

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100732520B1 (en) * 2006-08-01 2007-06-28 세메스 주식회사 Apparatus for treating substrates
KR100749547B1 (en) 2006-08-01 2007-08-14 세메스 주식회사 Apparatus for treating substrates
KR100749548B1 (en) 2006-08-01 2007-08-14 세메스 주식회사 Apparatus for treating substrates
KR100811824B1 (en) 2006-08-01 2008-03-10 세메스 주식회사 Apparatus for cleaning substrates
KR100831989B1 (en) 2006-08-30 2008-05-23 세메스 주식회사 Apparatus for treating substrates
JP2013105974A (en) * 2011-11-16 2013-05-30 Tokyo Electron Ltd Cleaning device, peeling system, cleaning method, program, and computer storage medium
KR101398436B1 (en) 2008-05-19 2014-05-26 주식회사 케이씨텍 Method and apparatus for cleaning the lower part of a substrate
JP2017143205A (en) * 2016-02-12 2017-08-17 株式会社荏原製作所 Substrate holding module, substrate processing device, and substrate processing method

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100732520B1 (en) * 2006-08-01 2007-06-28 세메스 주식회사 Apparatus for treating substrates
KR100749547B1 (en) 2006-08-01 2007-08-14 세메스 주식회사 Apparatus for treating substrates
KR100749548B1 (en) 2006-08-01 2007-08-14 세메스 주식회사 Apparatus for treating substrates
KR100811824B1 (en) 2006-08-01 2008-03-10 세메스 주식회사 Apparatus for cleaning substrates
KR100831989B1 (en) 2006-08-30 2008-05-23 세메스 주식회사 Apparatus for treating substrates
KR101398436B1 (en) 2008-05-19 2014-05-26 주식회사 케이씨텍 Method and apparatus for cleaning the lower part of a substrate
JP2013105974A (en) * 2011-11-16 2013-05-30 Tokyo Electron Ltd Cleaning device, peeling system, cleaning method, program, and computer storage medium
JP2017143205A (en) * 2016-02-12 2017-08-17 株式会社荏原製作所 Substrate holding module, substrate processing device, and substrate processing method
KR20170095123A (en) * 2016-02-12 2017-08-22 가부시키가이샤 에바라 세이사꾸쇼 Substrate holding module, substrate processing apparatus, and substrate processing method
KR102365323B1 (en) 2016-02-12 2022-02-22 가부시키가이샤 에바라 세이사꾸쇼 Substrate holding module, substrate processing apparatus, and substrate processing method

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