KR100807217B1 - Ceramic component and Method for the same - Google Patents

Abstract

Prefired insulated ceramic base; A semiconductor ceramic sheet bonded to the insulating ceramic base through a diffusion reaction layer anchored to the insulating ceramic base surface; And a metal layer formed by plating on the surface of the semiconductor ceramic sheet.

Ceramic, Alumina, Internal Electrode, Plating, Semiconductor, Firing, Thermistor, Electroplating

Description

Ceramic component and method for manufacturing same

1 is a cross-sectional view showing the structure of a ceramic component according to an embodiment of the present invention.

2 is a cross-sectional view showing a modified example.

3 illustrates a structure of a ceramic component according to another exemplary embodiment of the present invention, and FIGS. 3B and 3C are cross-sectional views taken along the lines A-A 'and B-B' of FIG. 3A, respectively.

4 illustrates a structure of a ceramic component according to still another embodiment of the present invention.

FIG. 5 is a flowchart for explaining a method for manufacturing the ceramic component shown in FIG. 3, and FIG. 6 shows a manufacturing process according to FIG. 5.

The present invention relates to a ceramic component and a method of manufacturing the same, and more particularly, to a ceramic component having an electrode having a uniform thickness and excellent electrical conductivity and a method of manufacturing the same.

Moreover, this invention relates to the ceramic component which can comprise the electrode with low electrical resistance at low cost, can trim a electrode with a laser, and has a high precision electrode pattern.

The demand for functional ceramic parts is on the rise due to the demand for high functionalization and fast processing speed of information and communication devices. For example, high precision chip resistance for smooth operation of integrated ICs and CPUs, chip varistors to remove static electricity from outside, chip thermistors to sense ambient temperature, or chip beads to remove conductive electromagnetic noise It is increasingly being emphasized.

These functional ceramic components consist of a functional ceramic sheet having electrical properties formed on an insulating ceramic base, at least one pair of internal electrodes electrically connected to the functional ceramic sheet, and an external electrode.

Here, the internal electrode is formed by a typical method such as a thick film printing method for printing a conductive paste by screen printing or a vapor deposition method for forming a metal by sputtering.

According to the thick film printing method, a conductive paste containing a noble metal powder such as silver (Ag) or a silver-palladium alloy and a glass frit, a binder, a fixing agent, a lubricant, and the like is coated on an insulating ceramic base surface. The screen is printed by screen printing to form internal electrodes. In the internal electrode formed by this method, the glass frit contained in the conductive paste is melted through a heat treatment process to induce adhesion between the insulating ceramic base and the internal electrode.

The internal electrode formed by this method has several disadvantages in that the glass frit is included in the internal electrode and formed by the printing method.

(1) As the metal powder used for the conductive paste, precious metals such as silver and silver-palladium alloys are used, and the material itself accounts for a large proportion of the production cost.

(2) When the internal electrode is formed to a thin thickness due to the characteristics of the thick film printing method, a large number of large pores exist on the surface of the internal electrode to affect the electrical conductivity.

(3) The electric resistance is as high as the content of the glass frit in the conductive paste.

(4) The spreading phenomenon of the thick-film printed electrically conductive paste exists, and the reliability of a ceramic component falls.

(5) It is difficult to control the thickness of the internal electrode.

On the other hand, according to the sputtering deposition method, since the insulating ceramic base is usually not plated, first, vacuum sputtering coating the metal on the insulating ceramic base to a thickness of several hundreds of microseconds, and then a metal such as nickel (Ni), gold (Au), or the like on the micro-micron Electroplated in thickness.

However, when the internal electrode is formed by plating after coating by sputtering, there are disadvantages as follows.

(1) The sputtering process is expensive because of high manufacturing equipment and process costs.

(2) After sputtering, electroplating is additionally required to lower the electrical resistance of internal electrodes.

(3) It cannot be used as a functional ceramic passive component because it consists only of an insulated ceramic substrate and internal electrodes.

Accordingly, the present invention is proposed to solve the problems of the prior art, and an object of the present invention is to provide a ceramic component having an electrode having a uniform thickness and excellent electrical conductivity.

Another object of the present invention is to provide a ceramic component having a high specification and precise electrical characteristics and various specifications by locally removing the electrode using a laser.

Another object of the present invention is to provide a ceramic component capable of constructing an electrode having low electrical resistance at low cost.

The above and other objects, features and advantages will be clearly understood through the embodiments described below.

According to one aspect of the invention, the pre-fired insulating ceramic base; A semiconductor ceramic sheet bonded to the insulating ceramic base through a diffusion reaction layer anchored to the insulating ceramic base surface; And a metal layer formed by plating on the surface of the semiconductor ceramic sheet.

According to this configuration, since the roughness of the surface of the semiconductor ceramic sheet can be made uniform, a metal layer excellent in electrical conductivity can be formed even at a thin thickness, and manufacturing cost can be reduced.

According to another aspect of the invention, a pre-fired insulating ceramic base; A semiconductor ceramic sheet bonded to the insulating ceramic base through a diffusion reaction layer anchored to the insulating ceramic base surface; And a metal layer formed by plating on the surface of the semiconductor ceramic sheet, wherein the metal layer is formed to surround an outer surface of the semiconductor ceramic sheet, and is removed at a portion in a length direction of the metal layer to expose the semiconductor ceramic sheet. Ceramic components are disclosed.

According to this structure, ceramic components of various specifications having precise electrical characteristics can be manufactured.

According to another aspect of the invention, a pre-fired insulating ceramic base; At least two semiconductor ceramic sheets formed to be bonded to and spaced apart from the insulating ceramic base through a diffusion reaction layer anchored to the insulating ceramic base surface; A metal layer formed by plating on each surface of the at least two semiconductor ceramic sheets; And a functional sheet formed at both ends of the spaced portion so as to overlap the metal layer.
Here, the functional sheet may be a ceramic of any one of a varistor, thermistor, and ferrite material, or may be made of a polymer material.

According to this structure, another functional sheet can be formed between the opposing metal layers, and the ceramic component which can implement a composite function can be provided.

According to another aspect of the invention, a pre-fired insulating ceramic base; First and second semiconductor ceramic sheets bonded to the insulating ceramic base through a diffusion reaction layer anchored on the front and back surfaces of the insulating ceramic base, respectively; And first and second metal layers formed by plating on surfaces of the first and second semiconductor ceramic sheets, respectively.

Preferably, the semiconductor ceramic sheet may be any one of a varistor, thermistor, and ferrite material, and preferably, the electrical resistance of the semiconductor ceramic sheet may be less than 1GΩ.

In addition, the insulating ceramic base may be any one of alumina or aluminum nitride, and the metal layer may be any one or two or more alloys of copper, nickel, silver, tin, and gold.

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The ceramic component may include an external terminal electrically connected to the metal layer; And an insulating protective film completely covering the metal layer and the semiconductor ceramic sheet except for the external terminal and fixed to the insulating ceramic base, wherein the insulating protective film is any one of, for example, glass, epoxy, and silicon. Can be.

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According to another aspect of the invention, there is provided a printing method comprising: printing a semiconductor ceramic paste on a pre-fired insulating ceramic base; Drying the printed semiconductor ceramic paste to convert it into a semiconductor ceramic film; Pressing the semiconductor ceramic film; A debinding step of removing the binder included in the semiconductor ceramic film; Firing the semiconductor ceramic film to form a semiconductor ceramic sheet and simultaneously forming a diffusion reaction layer on the insulating ceramic base and bonding the semiconductor ceramic film; Etching a surface of the semiconductor ceramic sheet formed on the insulating ceramic base; And plating the etched semiconductor ceramic sheet to form a metal layer on the surface thereof.

According to this configuration, since the metal layer is formed by applying the plating process, the manufacturing process cost is reduced.

According to another aspect of the invention, the step of laminating a semiconductor ceramic green sheet on a pre-fired insulating ceramic base; Pressing the semiconductor ceramic green sheet to closely contact the insulating ceramic base; Removing the binder included in the semiconductor ceramic green sheet; Firing the semiconductor ceramic green sheet to form a semiconductor ceramic sheet, and simultaneously forming and bonding a diffusion reaction layer on the insulating ceramic base; Etching a surface of the semiconductor ceramic sheet formed on the insulating ceramic base; And plating the etched semiconductor ceramic sheet to form a metal layer on the surface thereof.

According to another aspect of the invention, the step of laminating a semiconductor ceramic green sheet on a pre-fired insulating ceramic base; Pressing the semiconductor ceramic green sheet to closely contact the insulating ceramic base; Removing the binder included in the semiconductor ceramic green sheet; Firing the semiconductor ceramic green sheet to form a semiconductor ceramic sheet, and simultaneously forming and bonding a diffusion reaction layer on the insulating ceramic base; Exposing a portion of the insulating ceramic base by trimming the semiconductor ceramic sheet with a laser to be divided into two or more in a predetermined width or length direction; Etching a surface of the semiconductor ceramic sheet formed on the insulating ceramic base; And plating the etched semiconductor ceramic sheet to form two or more metal layers on the surface thereof.

According to still another aspect of the present invention, there is provided a method of printing a semiconductor ceramic paste, comprising: printing two or more semiconductor ceramic pastes on a pre-fired insulating ceramic base to be spaced at regular intervals; Drying the printed semiconductor ceramic paste to convert two or more semiconductor ceramic films spaced apart from each other; Pressing the semiconductor ceramic film; A debinding step of removing the binder included in the semiconductor ceramic film; Firing the semiconductor ceramic film to form at least two semiconductor ceramic sheets, and simultaneously forming and bonding a diffusion reaction layer on the insulating ceramic base; Etching a surface of the semiconductor ceramic sheet formed on the insulating ceramic base; Disclosed is a method of manufacturing a ceramic component comprising plating the etched semiconductor ceramic sheet to form two or more metal layers on its surface.

Preferably, the insulating ceramic base is a wafer divided by a scribe line, the manufacturing method comprises the steps of forming an insulating protective film to protect the metal layer; Breaking the insulating ceramic base wafer into unit chips based on the metal layer; And forming an external terminal to be electrically connected to an external exposed portion of the metal layer formed on a surface of the semiconductor ceramic sheet.

In addition, preferably, the insulating ceramic base is a wafer partitioned by scribe lines, and the manufacturing method includes: laser trimming removing a predetermined length portion of the metal layer to expose the semiconductor ceramic sheet; Forming an insulating protective film protecting the exposed semiconductor ceramic sheet and the metal layer; Breaking the insulating ceramic base wafer into unit chips based on the metal layer; And forming an external terminal to be electrically connected to an external exposed portion of the metal layer formed on a surface of the semiconductor ceramic sheet.

According to another aspect of the present invention, there is provided a printing method comprising: printing two or more semiconductor ceramic pastes on a pre-fired insulating ceramic base to be spaced at regular intervals; Drying the printed semiconductor ceramic paste to convert two or more semiconductor ceramic films spaced apart from each other; Pressing the semiconductor ceramic film; A debinding step of removing the binder included in the semiconductor ceramic film; Firing the semiconductor ceramic film to form at least two semiconductor ceramic sheets, and simultaneously forming and bonding a diffusion reaction layer on the insulating ceramic base; Etching a surface of the semiconductor ceramic sheet formed on the insulating ceramic base; Plating the etched semiconductor ceramic sheet to form two or more metal layers on its surface; Forming a functional sheet at both ends of the spaced portion so as to overlap the metal layer; Forming an insulating protective film protecting the functional sheet and the metal layer; Breaking the insulating ceramic base wafer into unit chips based on the metal layer; And forming an external terminal to be electrically connected to an external exposed portion of the metal layer formed on the surface of the semiconductor ceramic sheet.

According to another aspect of the invention, the step of laminating a semiconductor ceramic green sheet on a pre-fired insulating ceramic base; Pressing the semiconductor ceramic green sheet to closely contact the insulating ceramic base; Removing the binder included in the semiconductor ceramic green sheet; Firing the semiconductor ceramic green sheet to form a semiconductor ceramic sheet, and simultaneously forming and bonding a diffusion reaction layer on the insulating ceramic base; Exposing a portion of the insulating ceramic base by trimming the semiconductor ceramic sheet with a laser to be divided into two or more in a predetermined width or length direction; Etching a surface of the semiconductor ceramic sheet formed on the insulating ceramic base; Plating the etched semiconductor ceramic sheet to form two or more metal layers on its surface; Forming a functional sheet at both ends of the spaced portion so as to overlap the metal layer; Forming an insulating protective film protecting the functional sheet and the metal layer; Breaking the insulating ceramic base wafer into unit chips based on the metal layer; And forming an external terminal to be electrically connected to an external exposed portion of the metal layer formed on the surface of the semiconductor ceramic sheet.

The etching may be performed by dipping in an acid solution, and the insulating protective layer may be formed by any one of a screen printing method, a dipping method, and a vacuum deposition method.

The following describes a specific embodiment of the present invention with reference to the accompanying drawings. In the accompanying drawings, dimensions and shapes are shown modified to emphasize the features of the invention.

1 is a cross-sectional view showing the structure of a ceramic component according to an embodiment of the present invention.

Referring to FIG. 1, a ceramic component according to the present invention includes a semiconductor ceramic sheet 200 and a semiconductor ceramic bonded together through a diffusion bonding layer 150 on a pre-fired insulating ceramic substrate 100 and an insulating ceramic base 100. An electrode or metal layer 210 formed by plating so as to be electrically connected to the surface of the sheet 200, and an external terminal 500. In this case, the external terminal 500 may be omitted. For example, when the ceramic heater or the electrostatic chuck is configured, the final ceramic part may be manufactured by forming the electrode 210, and may be used as a patch antenna for GPS.

Here, the bonding between the insulating ceramic base 100 and the semiconductor ceramic sheet 200 is performed by printing and drying a semiconductor ceramic paste corresponding to the semiconductor ceramic sheet 200. It is made by the diffusion bonding layer 150 which is physically in close contact with the 100 and formed by injecting oxide materials in the semiconductor ceramic film into the insulating ceramic base 100 through solid diffusion by firing.

The surface of the insulating ceramic base 100 has, for example, a polycrystalline structure composed of a plurality of grains having different sizes. These pores are related to roughness (roughness) of the surface of the insulating ceramic base 100, affect the anchoring of the semiconductor ceramic sheet 200 to be described later, and also act as a passage of mass transfer through solid diffusion in the firing process described later. do.

The diffusion bonding layer 150 is difficult to determine the exact shape of the phase by a scientific analysis technique, but is an intermediate material between the semiconductor ceramic sheet 200 and the insulating ceramic base 100, and the firing temperature and time, Changes in volume and electrical properties, phases, etc. may occur due to an atmosphere such as an oxygen partial pressure, but does not change once formed.

Pre-fired polycrystalline alumina or aluminum nitride-based ceramic base may be used as the insulating ceramic base 100, and the insulating ceramic base 100 may be used at a temperature range of −55 ° C. to 300 ° C., which is a general operating temperature range of ceramic components. The insulation resistance can be chosen to be maintained at 10 ¹⁰ ohm or more.

Next, formation of the semiconductor ceramic sheet 200 will be described.

The semiconductor ceramic paste corresponding to the semiconductor ceramic sheet 200 is formed on the surface of the insulated ceramic base 100 by screen printing, dried, and converted into a semiconductor ceramic film, which is compressed by isothermal isothermal pressure to insulate the ceramic base 100. The semiconductor ceramic sheet is manufactured by bringing the organic binder contained in the semiconductor ceramic film into close contact with the surface to be anchored to the surface and then burning the organic binder.

The semiconductor ceramic paste is composed of 40 to 80wt% of the semiconductor ceramic powder, 20 to 40wt% of the binder solution, it was used having a viscosity of 10rpm 200kcps ± 50kcps at 25 ℃ room temperature. Here, when the solid content of the semiconductor ceramic powder constituting the semiconductor ceramic paste is less than 40wt%, cracking of the surface of the semiconductor ceramic film formed in the screen printing and drying process and overshrinkage of the semiconductor ceramic sheet 200 occurs after the firing process, A lifting phenomenon may occur between the semiconductor ceramic sheet 200 and the insulating ceramic base 100. In addition, when the content exceeds 80wt%, since the binder component contained in the semiconductor ceramic film is relatively small, it is not sufficiently in close contact with the insulating ceramic base 100 in the subsequent isothermal isostatic pressing process.

The binder solution in the semiconductor ceramic paste is composed of a binder solid content of 5 to 30 wt%, a plasticizer 10 to 25 wt%, a solvent 40 to 70 wt%, and a lubricant 1 wt%.

Here, when the binder solids content exceeds 30wt%, as described above, the plastic overshrinkage phenomenon that occurs when the content of the semiconductor ceramic powder is less than 40wt% similarly occurs. In addition, when the binder solid content is less than 5wt%, as described above, the same problem occurs when the content of the semiconductor ceramic powder exceeds 80wt%.

Meanwhile, the binder solid may be polyvinylbutyral, a plasticizer of dioctyl phthalate (DOP), a solvent of alpha-terpineol, and a lubricant of castor oil.

Polyvinyl butyral is characterized in that the softening point is as low as 65 ℃, which is selected in connection with the isothermal isostatic pressing process, the main process of the present invention is carried out in the water temperature range of 75 ~ 80 ℃. That is, a semiconductor ceramic paste is formed on a required portion of the surface of the insulating ceramic base through screen printing, which is a subsequent process, and dried to form a semiconductor ceramic film, and then subjected to isothermal isostatic pressing, and the binder contained in the semiconductor ceramic film. Since is present in the temperature range where softening occurs, through sufficient shrinkage, the filling density of the semiconductor ceramic film is increased, the thickness is uniform, and adhesion to pores existing on the surface of the insulating ceramic base occurs. In addition, the binder in the semiconductor ceramic film selected in the present invention plays an important role in increasing the density of the semiconductor ceramic sheet of the final product and the bonding strength of the semiconductor ceramic sheet and the insulating ceramic base.

In addition, as a binder solid component among the components constituting the paste, ethyl cellulose used in general metal electrode paste and the like and dibutyl phthalate as a plasticizer may be used. In this case, the softening point of ethyl cellulose is in the range of 155 to 162 ° C. When the pressing is carried out under a condition of 65 to 90 ° C., which is a temperature range of water, in the isostatic condition, since the water temperature does not reach the softening point of the ethyl cellulose binder, it is difficult to expect sufficient shrinkage and increase in density of the semiconductor ceramic film. At this time, by applying the hot pressing method to change the pressing process by the uniaxial pressurization method under the conditions of the temperature at which the softening point occurs, and to increase the density of the semiconductor ceramic sheet by increasing the firing temperature and time in the subsequent firing process This may apply.

In addition, the binder solids and the solvent in the binder solution may be changed and selected according to the conditions of the pressing process, and the softening point of the selected binder solids may serve as the most important selection factor.

In addition, when the type of binder is changed and applied, when the crimping process is the same condition, the electrical characteristics of the semiconductor ceramic sheet may be realized by changing the condition in the firing process. In addition, even when the types of binders are the same, conditions such as temperature, pressure, and time, which are variables of the crimping conditions, are changed, so that the density and thickness shrinkage of the semiconductor ceramic film and the adhesion at the interface between the insulating ceramic base and the semiconductor ceramic film are changed. Can be configured in various ways.

Preferably, the electrical resistance of the semiconductor ceramic sheet 200 may be less than 1GΩ.

According to the present invention, the semiconductor ceramic sheet 200 may be configured using a semiconductor ceramic green sheet in addition to the semiconductor ceramic paste.

The semiconductor ceramic green sheet refers to a thin paper form composed of a semiconductor ceramic powder and a binder, and may be applied by changing or adding a manufacturing process.

For example, a process of manufacturing a semiconductor ceramic film through screen printing and drying of the semiconductor ceramic paste on the insulating ceramic base 100 may be replaced by laminating a semiconductor ceramic green sheet on the insulating ceramic base 100. Thereafter, the semiconductor ceramic green sheet stacked on the insulating ceramic base 100 may be pressed in an isothermal isothermal environment, and then burned and removed, the binder included in the green sheet, and then may be manufactured into the semiconductor ceramic sheet 200 through a firing process. The semiconductor ceramic sheet 200 thus formed may be partially removed by using a laser to expose the insulating ceramic base to form two or more semiconductor ceramic sheets 200 and 200a spaced apart by the exposed insulating ceramic base. Subsequently, a process including plating, for example, forming an electrode through electroplating, forming an insulating protective film, and forming an external terminal may be sequentially performed to manufacture a ceramic component having the same characteristics as the embodiment using the semiconductor ceramic paste described above. Can be.

Next, a process of forming the electrode or the metal layer 210 will be described.

First, the surface of the semiconductor ceramic sheet 200 is treated to have a constant roughness. For example, the semiconductor ceramic sheet 200 bonded to the insulating ceramic base 100 may be replaced with 5% aqueous sodium hydroxide solution (5% NaOH + 95% H ₂ O) or 5% aqueous sulfuric acid solution (5% H ₂ SO ₄ + 95). The surface of the semiconductor ceramic sheet 200 may be etched by immersion for 5 seconds to 5 minutes in an etchant such as% H ₂ O). Through such acid etching, the surface of the semiconductor ceramic sheet 200 has a constant roughness, thereby increasing the plating bonding strength between the plating layer and the surface of the semiconductor ceramic sheet 200 through plating.

Thereafter, copper (Cu) is plated on the semiconductor ceramic sheet 200 to a thickness of about several microns, and then nickel or gold is plated thereon in units of tens of microseconds. At this time, since the semiconductor ceramic sheet 200 is electrically connected, metal ions in the electrolyte are electrodeposited on the surface of the semiconductor ceramic sheet 200 to form a plating layer in the plating process, but plating is performed on the insulating ceramic substrate 100 or other portions. It doesn't work.

Since the external terminal 500 is formed, a low resistance ceramic component having an electrical resistance of less than 10 mΩ may be manufactured.

FIG. 2 is a cross-sectional view illustrating a modified example, in which semiconductor ceramic sheets 200 and 200a are bonded to the front and back surfaces of the insulating ceramic base 100 by the diffusion reaction layers 150 and 150a, and the semiconductor ceramic sheets 200 and 200a. On the surface, electrodes 210 and 210a of the same material are formed. As a result, the low resistance ceramic parts of FIG. 1 have lower electrical resistance because they have a structure connected in parallel.

3 illustrates a structure of a ceramic component according to another exemplary embodiment of the present invention, and FIGS. 3B and 3C are cross-sectional views taken along the lines A-A 'and B-B' of FIG. 3A, respectively.

Referring to FIG. 3, the longitudinal middle portion of the electrode 210 is removed at regular intervals to expose the semiconductor ceramic sheet 200. The electrode 210 has a strip shape and is formed by plating on the semiconductor ceramic sheet 200. The middle portion of the electrode 210 is removed by a predetermined interval using a laser to expose the semiconductor ceramic sheet 200. As the ceramic component manufactured as described above, for example, when the semiconductor ceramic sheet 200 is a varistor, an electrostatic protection device having various capacitances may be used according to spaced intervals.

4 illustrates a structure of a ceramic component according to still another embodiment of the present invention.

Referring to FIG. 4, the semiconductor ceramic sheets 200 and 200a spaced apart from each other are bonded onto the insulating ceramic base 100 by the anchoring structures of the diffusion bonding layers 150 and 150a, respectively. The electrodes 210 and 210a are formed on a plating process, respectively. In addition, the space between the pair of electrodes 210 and 210a is filled with the functional sheet 204, and the remaining portion except for the external terminal 500 is coated by the insulating protective film 300.

The functional sheet 204 may be made of a ceramic or polymer material that can implement electrical characteristics. In addition, when the fuse metal is applied to the functional sheet 204, a ceramic chip fuse may be implemented.

In particular, when the functional sheet 204 is made of a ceramic material, it should be selected in association with the properties of the material of the electrodes 210 and 210a. That is, when the electrode material is a metal such as nickel or copper, the functional sheet 204 may be selected as capable of reducing atmosphere firing, and the firing conditions may be set to normally implement electrical characteristics.

In addition, when the functional sheet of the polymer material is applied, the material of the electrode should be selected after the corrosion by the organic solvent and the like contained in the polymer is examined in advance, and the conditions such as curing temperature and time are a big problem in selecting the material of the electrode. It doesn't work.

According to the above embodiments, it has the following characteristics.

First, by uniformizing the roughness of the surface of the semiconductor ceramic sheet, it is possible to form an electrode excellent in the electrical conductivity of a thin thickness on the surface of the semiconductor ceramic sheet through the plating has the effect of lowering the manufacturing cost.

In addition, by removing a portion of the electrode of the strip line formed on the surface of the semiconductor ceramic sheet using a laser, it is possible to manufacture a ceramic component of various specifications having precise electrical characteristics.

In addition, the electrode can be made of a metal such as nickel or copper, and the manufacturing cost of the ceramic component can be reduced.

In addition, it is possible to form electrodes having excellent electrical conductivity of various thicknesses.

The following describes a method of manufacturing a ceramic component according to the present invention.

FIG. 5 is a flowchart for explaining a method for manufacturing the ceramic component shown in FIG. 3, and FIG. 6 shows a manufacturing process according to FIG. 5.

First, as shown in FIG. 5A, the insulating ceramic base 100 pre-fired at a predetermined temperature is prepared (step S61). In this example, a single chip ceramic component is manufactured for convenience of description, but in a practical process, a plurality of chip ceramic component sizes are placed on a wafer for an insulating ceramic base having a length of 60 mm, a width of 50 mm, and a thickness of 0.25 mm. Use it in a state partitioned by a scribe line according to the

As described above, an alumina or aluminum nitride material may be used as the insulating ceramic base 100, and in this embodiment, an alumina base having a purity of 96% or more is used.

Next, a semiconductor ceramic paste is prepared (step S62). The semiconductor ceramic paste is composed of 40 to 80 wt% of the semiconductor ceramic powder and 20 to 40 wt% of the binder solution. The semiconductor ceramic powder is composed of zinc oxide, a main raw material, formulated to exhibit varistor properties, and procedium oxide, cobalt oxide, and neodium oxide, which are additives. Plasticizer (dioctyl phthalate, DOP) 10 ~ 25wt%, solvent (alphaterpinol) 40 ~ 70wt%, lubricant (castor oil, Castor Oil) 1wt%.

Subsequently, as shown in FIG. 5B, the semiconductor ceramic film 202 is formed on the insulating ceramic base 100 to have a predetermined thickness (step S63).

At this time, the semiconductor ceramic film 202 formed should have a thickness of at least 10 μm or more, because the surface of the alumina substrate used as the insulating ceramic base has a roughness difference depending on particle size unevenness. This is because it has a roughness deviation between 3 μm. Through the isothermal isostatic pressing and firing process described below, the semiconductor ceramic film 202 has a thickness shrinkage of about 50% or more, and material movement to the insulating ceramic base 100 occurs during the firing process to form a chemical reaction layer. When the semiconductor ceramic film 202 is formed at 10 μm, the thickness of the semiconductor ceramic sheet 200 corresponding thereto is less than 5 μm after the firing process, and the thickness may be in the range of roughness variation of the insulating ceramic base 100. You can cover it.

The semiconductor ceramic paste was formed using a stainless steel wire screen having a # 250 mesh, 10 μm emulsion, to form a semiconductor ceramic film 202 in a predetermined pattern on an insulating ceramic base, and dried at 125 ° C. for 5 minutes.

Subsequently, the insulating ceramic base wafer on which the semiconductor ceramic film 202 is formed is mounted on an aluminum plate or an auxiliary material, sealed in vacuum-packed vinyl, and isothermally pressurized and crimped under conditions of a water temperature of 80 ° C. and 6000 psi (15 minutes). (Step S64).

As described above, the semiconductor ceramic film is densified in the thickness direction by isothermal isostatic pressing, and the isothermal isostatic pressing process is performed on the binder in the semiconductor ceramic film 202 in contact with the insulating ceramic base 100. Since it has a softening point (65 ° C.) lower than the temperature condition, the semiconductor ceramic powder can be rearranged to fill pores existing on and inside the semiconductor ceramic film. At the same time, physical bonding at the interface between the semiconductor ceramic film 202 and the insulating ceramic base 100 is affected.

Thereafter, binder burn-out is performed under conditions of 310 ° C. and 12 hours to burn out the organic binder contained in the compressed semiconductor ceramic film (step S65).

Thereafter, the semiconductor ceramic film 202 pressed through the firing process is converted into a semiconductor ceramic sheet 200 having electrical characteristics and at the same time the metal oxide material of the semiconductor ceramic film 202 is bonded to the insulating ceramic base 100. The diffusion bonding layer 150 having an anchoring structure through the movement of the material is formed by pores of the insulating ceramic base 100 by solid diffusion due to the thermal energy, thereby forming the semiconductor ceramic sheet 200 and the insulating ceramic base 100. The joining is hardened (step S66).

Thereafter, an acid etching process of dipping the insulating ceramic base to which the semiconductor ceramic sheet 200 is bonded in a 5% aqueous sodium hydroxide solution (5% NaOH + 95% H ₂ O) at room temperature for 20 seconds is performed (step S67). In this acid etching step, metal ions in the electrolytic solution are subsequently electrodeposited and plated on a groove-like surface treatment portion formed on the surface of the semiconductor ceramic by etching, thereby acting as a kind of plating layer anchoring, and then performing final plating. It is for greatly improving the adhesive strength of the electrode formed. In addition, the etching conditions such as the acid type, immersion time, temperature, and the like may be changed and applied in consideration of chemical properties of the semiconductor ceramic sheet.

Subsequently, the insulating ceramic base 100 to which the surface-etched semiconductor ceramic sheet 200 is bonded is immersed in a nickel sulfate electrolyte solution having a pH of 4, and under conditions of current 15 to 50 A and time 10 minutes to 100 minutes. Likewise, the surface of the semiconductor ceramic sheet 200 is nickel plated to form an electrode 210 (step S68). The plating conditions including the electrolyte may be variously changed and applied according to the semiconductor ceramic sheet and the product configuration selected.

Subsequently, as shown in FIG. 5D, the corresponding portion of the electrode 210 is removed by laser trimming so that the intermediate portion of the semiconductor ceramic sheet 200 surrounded by the electrode 210 is exposed at regular intervals (step S69).

Next, the protective film 300 is formed to completely cover the electrode 210 and the semiconductor ceramic sheet 200 (FIG. 5E, step S70). The protective film 300 should be selected as a stable material such as electrical insulation, chemical resistance, moisture resistance, heat resistance, etc., and in the case of a glass material, it may be formed by screen printing or a metered discharge method. It may be sufficiently applicable through a process change such as vacuum heat deposition or dipping.

In particular, when the electrode 210 is made of a metal material such as nickel or copper, when attempting to form a protective film of glass material, the heat treatment atmosphere of the glass should be carried out in a reducing atmosphere of H ₂ / N ₂ mixed gas or N ₂ gas. Oxidation of the electrode can be prevented.

After this formation, the chip is broken into a single chip state based on the scribe line of the insulated ceramic base wafer (step S71), and the external terminal 500 is formed by a conventional method (FIG. 5F and S72).

Specifically, the external terminals may be formed by dipping a portion of the electrodes 210 and 210a exposed at both ends of the divided chip ceramic parts using a metal paste such as copper or silver containing a glass frit or a silver-epoxy or copper-epoxy paste. 500). It should be noted that when the external terminal paste including the glass frit is applied, problems such as oxidation of the electrode may occur because the heat treatment temperature is at least 500 ° C or higher. Therefore, in such a case, problems such as oxidation of the electrode can be prevented in advance by performing the heat treatment in the reducing atmosphere of the H ₂ / N ₂ mixed gas or the N ₂ gas as in the heat treatment atmosphere of the glass described above.

The manner of dividing the insulating ceramic base wafer and attaching the external terminal can also be sufficiently changed through the process change. For example, as in the chip resistor manufacturing process, the external terminal may be formed after the first division, and then may be manufactured as a single chip through the secondary division.

After this formation, the nickel plating layer 510 and the tin plating layer 520 are sequentially formed on the external terminal 500 (step S73).

Although the above has been described with reference to the preferred embodiment of the present invention, various modifications are possible at the level of those skilled in the art. As long as such changes do not depart from the scope of the present invention, it is natural that such changes belong to the present invention.

According to the present invention, it has various effects.

First, since the roughness of the surface of the semiconductor ceramic sheet can be made uniform, it is possible to form an electrode having excellent electrical conductivity even at a thin thickness, thereby reducing the manufacturing cost.

In addition, by removing a predetermined portion of the electrode formed on the surface of the semiconductor ceramic sheet using a laser, it is possible to manufacture a ceramic component of various specifications having precise electrical characteristics.

In addition, the electrode can be made of a metal such as nickel or copper, and the manufacturing cost of the ceramic component can be reduced.

In addition, it is possible to form electrodes having excellent electrical conductivity of various thicknesses.

In addition, since the electrode is formed by applying the plating process there is an advantage that the manufacturing process cost is reduced.

In addition, since the electrode has a structure formed on the semiconductor ceramic sheet, there is an advantage that the characteristics of the semiconductor ceramic can be implemented by changing the material of the semiconductor ceramic sheet.

In addition, another functional sheet may be formed between the opposing electrodes, thereby providing a ceramic component having a composite function.

Claims (23)

Prefired insulated ceramic base; A semiconductor ceramic sheet bonded to the insulating ceramic base through a diffusion reaction layer anchored to the insulating ceramic base surface; And And a metal layer formed by plating on the surface of the semiconductor ceramic sheet. Prefired insulated ceramic base; A semiconductor ceramic sheet bonded to the insulating ceramic base through a diffusion reaction layer anchored to the insulating ceramic base surface; And A metal layer formed on the surface of the semiconductor ceramic sheet by plating; The metal layer is formed to surround the outer surface of the semiconductor ceramic sheet, the ceramic component, characterized in that a portion is removed in the longitudinal direction of the metal layer to expose the semiconductor ceramic sheet. Prefired insulated ceramic base; At least two semiconductor ceramic sheets formed to be bonded to and spaced apart from the insulating ceramic base through a diffusion reaction layer anchored to the insulating ceramic base surface; A metal layer formed by plating to surround an outer surface of each of the at least two semiconductor ceramic sheets; And And a functional sheet formed to be in contact with the insulating ceramic base at the spaced portion and to overlap the metal layer. Prefired insulated ceramic base; First and second semiconductor ceramic sheets bonded to the insulating ceramic base through a diffusion reaction layer anchored on the front and back surfaces of the insulating ceramic base, respectively; And And first and second metal layers formed on the surfaces of the first and second semiconductor ceramic sheets by plating, respectively. The method according to any one of claims 1 to 4, The semiconductor ceramic sheet is a ceramic component, characterized in that any one of the varistor, thermistor, and ferrite material. The method according to any one of claims 1 to 4, And the electrical resistance of the semiconductor ceramic sheet is less than 1GΩ. The method according to any one of claims 1 to 4, And the insulating ceramic base is either alumina or aluminum nitride. The method according to any one of claims 1 to 4, The metal layer is a ceramic component, characterized in that any one or two or more alloys of metals including copper, nickel, silver, tin and gold. The method according to claim 3, The functional sheet is a ceramic component, characterized in that the ceramic of any one of the varistor, thermistor, and ferrite material. The method according to claim 3, The functional sheet is a ceramic component, characterized in that composed of a polymer material. The method according to any one of claims 1 to 4, An external terminal electrically connected to the metal layer; And And an insulating protective film completely covering the metal layer and the semiconductor ceramic sheet except for the external terminal and fixed to the insulating ceramic base. The method according to claim 11, The insulating protective film is a ceramic component, characterized in that any one of glass, epoxy, and silicon. Printing a semiconductor ceramic paste onto a prefired insulating ceramic base; Drying the printed semiconductor ceramic paste to convert it into a semiconductor ceramic film; Pressing the semiconductor ceramic film; A debinding step of removing the binder included in the semiconductor ceramic film; Firing the semiconductor ceramic film to form a semiconductor ceramic sheet and simultaneously forming a diffusion reaction layer on the insulating ceramic base and bonding the semiconductor ceramic film; Etching a surface of the semiconductor ceramic sheet formed on the insulating ceramic base; And Plating the etched semiconductor ceramic sheet to form a metal layer on the surface thereof. Stacking a semiconductor ceramic green sheet on a pre-fired insulating ceramic base; Pressing the semiconductor ceramic green sheet to closely contact the insulating ceramic base; Removing the binder included in the semiconductor ceramic green sheet; Firing the semiconductor ceramic green sheet to form a semiconductor ceramic sheet, and simultaneously forming and bonding a diffusion reaction layer on the insulating ceramic base; Etching a surface of the semiconductor ceramic sheet formed on the insulating ceramic base; And Plating the etched semiconductor ceramic sheet to form a metal layer on the surface thereof. Stacking a semiconductor ceramic green sheet on a pre-fired insulating ceramic base; Pressing the semiconductor ceramic green sheet to closely contact the insulating ceramic base; Removing the binder included in the semiconductor ceramic green sheet; Firing the semiconductor ceramic green sheet to form a semiconductor ceramic sheet, and simultaneously forming and bonding a diffusion reaction layer on the insulating ceramic base; Exposing a portion of the insulating ceramic base by trimming the semiconductor ceramic sheet with a laser to be divided into two or more in a predetermined width or length direction; Etching a surface of the semiconductor ceramic sheet formed on the insulating ceramic base; And Plating the etched semiconductor ceramic sheet to form two or more metal layers on the surface thereof. Printing at least two semiconductor ceramic pastes on the prefired insulating ceramic base at regular intervals; Drying the printed semiconductor ceramic paste to convert two or more semiconductor ceramic films spaced apart from each other; Pressing the semiconductor ceramic film; A debinding step of removing the binder included in the semiconductor ceramic film; Firing the semiconductor ceramic film to form at least two semiconductor ceramic sheets, and simultaneously forming and bonding a diffusion reaction layer on the insulating ceramic base; Etching a surface of the semiconductor ceramic sheet formed on the insulating ceramic base; Plating the etched semiconductor ceramic sheet to form two or more metal layers on the surface thereof. The method according to any one of claims 13 to 16, The insulating ceramic base is a wafer partitioned by scribe lines, Forming an insulating protective film protecting the metal layer; Breaking the insulating ceramic base wafer into unit chips based on the metal layer; And And forming an external terminal to be electrically connected to an external exposed portion of the metal layer formed on a surface of the semiconductor ceramic sheet. The method according to any one of claims 13 to 16, The insulating ceramic base is a wafer partitioned by scribe lines, Laser trimming a portion of the metal layer in a lengthwise direction to expose the semiconductor ceramic sheet; Forming an insulating protective film protecting the exposed semiconductor ceramic sheet and the metal layer; Breaking the insulating ceramic base wafer into unit chips based on the metal layer; And And forming an external terminal to be electrically connected to an external exposed portion of the metal layer formed on a surface of the semiconductor ceramic sheet. Printing at least two semiconductor ceramic pastes on the prefired insulating ceramic base at regular intervals; Drying the printed semiconductor ceramic paste to convert two or more semiconductor ceramic films spaced apart from each other; Pressing the semiconductor ceramic film; A debinding step of removing the binder included in the semiconductor ceramic film; Firing the semiconductor ceramic film to form at least two semiconductor ceramic sheets, and simultaneously forming and bonding a diffusion reaction layer on the insulating ceramic base; Etching a surface of the semiconductor ceramic sheet formed on the insulating ceramic base; Plating the etched semiconductor ceramic sheet to form two or more metal layers on its surface; Forming a functional sheet at both ends of the spaced portion so as to overlap the metal layer; Forming an insulating protective film protecting the functional sheet and the metal layer; Breaking the insulating ceramic base wafer into unit chips based on the metal layer; And And forming an external terminal to be electrically connected to an externally exposed portion of the metal layer formed on the surface of the semiconductor ceramic sheet. Stacking a semiconductor ceramic green sheet on a pre-fired insulating ceramic base; Pressing the semiconductor ceramic green sheet to closely contact the insulating ceramic base; Removing the binder included in the semiconductor ceramic green sheet; Firing the semiconductor ceramic green sheet to form a semiconductor ceramic sheet, and simultaneously forming and bonding a diffusion reaction layer on the insulating ceramic base; Exposing a portion of the insulating ceramic base by trimming the semiconductor ceramic sheet with a laser to be divided into two or more in a predetermined width or length direction; Etching a surface of the semiconductor ceramic sheet formed on the insulating ceramic base; Plating the etched semiconductor ceramic sheet to form two or more metal layers on its surface; Forming a functional sheet at both ends of the spaced portion so as to overlap the metal layer; Forming an insulating protective film protecting the functional sheet and the metal layer; Breaking the insulating ceramic base wafer into unit chips based on the metal layer; And Forming an external terminal to be connected to a metal layer formed on the surface of the semiconductor ceramic sheet. The method according to any one of claims 13, 14, 15, 16, 19 and 20, The etching is performed by immersing in an acid solution. The method according to claim 19 or 20, The insulating protective film is formed by any one of a screen printing method, a dipping method, and a vacuum deposition method. Prefired insulated ceramic base; A semiconductor ceramic sheet bonded to the insulating ceramic base through a diffusion reaction layer anchored to the insulating ceramic base surface; And A metal layer formed on the surface of the semiconductor ceramic sheet by plating; And a part of the semiconductor ceramic sheet and the metal layer is removed to expose a part of the insulator ceramic base.

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