KR100798316B1 - 액정표시소자 - Google Patents
액정표시소자 Download PDFInfo
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- KR100798316B1 KR100798316B1 KR1020010089292A KR20010089292A KR100798316B1 KR 100798316 B1 KR100798316 B1 KR 100798316B1 KR 1020010089292 A KR1020010089292 A KR 1020010089292A KR 20010089292 A KR20010089292 A KR 20010089292A KR 100798316 B1 KR100798316 B1 KR 100798316B1
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- gate line
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- liquid crystal
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 43
- 239000010409 thin film Substances 0.000 claims abstract description 14
- 239000011159 matrix material Substances 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims description 9
- 210000002858 crystal cell Anatomy 0.000 description 12
- 239000003990 capacitor Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
- G02F1/136245—Active matrix addressed cells having more than one switching element per pixel having complementary transistors
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Liquid Crystal (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Liquid Crystal Display Device Control (AREA)
Abstract
Description
상세히 설명하면, 액정패널 상의 화소들은 도 2와 같은 등가회로를 가지게 된다. 도 2에서 화소는 게이트 라인(GL), 데이터 라인(DL) 및 공통전극(CL)사이에 접속되어진 TFT와, TFT의 소오스 단자와 공통전극(CL) 사이에 접속되어진 액정셀(Clc)로 구성되게 된다. 상기 액정셀(Clc)은 게이트 라인(GL)상의 게이트 신호에 의해 TFT가 턴-온(Turn-On)되는 시점으로부터 턴-오프(Turn-Off)되는 시점까지의 기간 동안 데이터 라인(DL)상의 데이터 전압과 공통전극(CL)상의 기준전압과의 전압차를 충전하게 된다. 그러나, TFT의 게이트 단자에 인가되는 게이트 신호는 게이트 라인(GL)의 저항에 의해 게이트 신호지연이 발생하게 된다. 즉, 도면에 도시한 바와 같이 화소가 게이트 라인(GL)의 시작점으로부터 가까운 경우에는 게이트 신호의 지연이 거의 없는 반면에 화소가 게이트 라인(GL)의 시작점으로부터 멀리 떨어진 경우에는 게이트 신호가 전달되는 게이트 라인의 길이가 길어지기 때문에 게이트 라인의 배선 저항에 의한 영향이 커지므로 게이트 신호의 지연이 커지게 된다. 이렇게, 게이트신호의 지연량이 게이트 라인의 저항으로 인하여 화소들의 위치가 게이트라인(GL)의 시작점으로부터 멀어 질수록 커지게 된다면, 화소들의 위치가 게이트라인(GL)의 시작점으로부터 멀어짐에 따라 피드 쓰로우 전압(ΔVp)은 화소의 위치가 게이트라인(GL)의 시작점으로부터 멀어질수록 커지게 된다. 다시 말하여, 피드 쓰로우 전압(ΔVp)은 게이트신호의 지연시간이 길어질수록 커지게 된다.
Claims (6)
- m행의 게이트 라인(GL)과, n열의 데이터 라인(DL);상기 m행의 게이트 라인(GL)과 n열의 데이터 라인(DL)에 의해 정의되며 매트릭스 형태로 배치되는 m×n 개의 화소;각 행의 게이트 라인(GL)과 마지막 번째 데이터 라인(DL)이 정의하는 화소와 대응하는 영역의 게이트 라인(GL)에 연결되는 보조 게이트 라인(GL`);상기 m행의 게이트 라인(GL)과 n열의 데이터 라인(DL)의 교차부 각각에 형성되는 박막 트랜지스터를 포함하여 구성되는 액정표시소자.
- 제 1 항에 있어서, 상기 박막트랜지스터는 반도체층과, 상기 게이트 라인(GL)으로부터 인출되어진 게이트 전극과, 상기 데이터 라인(DL)으로부터 인출되어진 소오스 전극 및 화소에 형성된 화소 전극에 접속된 드레인 전극을 포함하고 있으며 상기 소오스 전극과 드레인 전극은 서로 대향하여 상기 반도체층과 일부 영역이 오버랩되도록 배치되는 것을 특징으로 하는 액정표시소자.
- 제 1 항에 있어서, 상기 보조 게이트 라인(GL')은 게이트 라인(GL)과 동일한 폭을 가지고 상기 게이트 라인(GL)과 평행하게 배치되는 것을 특징으로 하는 액정표시소자.
- 제 1 항에 있어서, 상기 보조 게이트 라인(GL')은 게이트 라인(GL)의 하부에 형성되는 것을 특징으로 하는 액정표시소자.
- 제 1 항에 있어서, 상기 보조 게이트 라인(GL')은 게이트 라인(GL)의 상부에 형성되는 것을 특징으로 하는 액정표시소자.
- 제 1 항에 있어서, 상기 게이트 라인(GL)과 보조 게이트 라인(GL')은 하나의 게이트 패드에 연결되는 것을 특징으로 하는 액정표시소자.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020010089292A KR100798316B1 (ko) | 2001-12-31 | 2001-12-31 | 액정표시소자 |
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KR1020010089292A KR100798316B1 (ko) | 2001-12-31 | 2001-12-31 | 액정표시소자 |
Publications (2)
Publication Number | Publication Date |
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KR20030058758A KR20030058758A (ko) | 2003-07-07 |
KR100798316B1 true KR100798316B1 (ko) | 2008-01-28 |
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KR1020010089292A KR100798316B1 (ko) | 2001-12-31 | 2001-12-31 | 액정표시소자 |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104391411B (zh) * | 2014-12-16 | 2017-06-06 | 深圳市华星光电技术有限公司 | 一种液晶显示面板 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01265232A (ja) * | 1988-04-18 | 1989-10-23 | Hitachi Ltd | 薄膜トランジスタマトリクス基板 |
JPH04280226A (ja) * | 1991-03-08 | 1992-10-06 | Nec Corp | 薄膜トランジスタ素子アレイおよびその駆動方法 |
KR19990003279A (ko) * | 1997-06-25 | 1999-01-15 | 윤종용 | 액정 표시 장치의 화소구조 |
JP2000131713A (ja) * | 1998-10-26 | 2000-05-12 | Sony Corp | 液晶表示装置 |
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2001
- 2001-12-31 KR KR1020010089292A patent/KR100798316B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01265232A (ja) * | 1988-04-18 | 1989-10-23 | Hitachi Ltd | 薄膜トランジスタマトリクス基板 |
JPH04280226A (ja) * | 1991-03-08 | 1992-10-06 | Nec Corp | 薄膜トランジスタ素子アレイおよびその駆動方法 |
KR19990003279A (ko) * | 1997-06-25 | 1999-01-15 | 윤종용 | 액정 표시 장치의 화소구조 |
JP2000131713A (ja) * | 1998-10-26 | 2000-05-12 | Sony Corp | 液晶表示装置 |
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