KR100796112B1 - 단일 피처들의 광학 계측법 - Google Patents

단일 피처들의 광학 계측법 Download PDF

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Publication number
KR100796112B1
KR100796112B1 KR1020047020328A KR20047020328A KR100796112B1 KR 100796112 B1 KR100796112 B1 KR 100796112B1 KR 1020047020328 A KR1020047020328 A KR 1020047020328A KR 20047020328 A KR20047020328 A KR 20047020328A KR 100796112 B1 KR100796112 B1 KR 100796112B1
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South Korea
Prior art keywords
single feature
profile
simulated optical
feature
optical signatures
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Expired - Fee Related
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English (en)
Korean (ko)
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KR20050010919A (ko
Inventor
조오지 비스쵸프
싱허 니우
쭌웨이 바오
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팀버 테크놀로지스, 인코포레이티드
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020047020328A 2002-06-18 2003-06-09 단일 피처들의 광학 계측법 Expired - Fee Related KR100796112B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/175,207 2002-06-18
US10/175,207 US6775015B2 (en) 2002-06-18 2002-06-18 Optical metrology of single features
PCT/US2003/018186 WO2003106916A2 (en) 2002-06-18 2003-06-09 Optical metrology of single features

Publications (2)

Publication Number Publication Date
KR20050010919A KR20050010919A (ko) 2005-01-28
KR100796112B1 true KR100796112B1 (ko) 2008-01-21

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Country Status (7)

Country Link
US (4) US6775015B2 (enExample)
JP (1) JP2005530144A (enExample)
KR (1) KR100796112B1 (enExample)
CN (1) CN1308651C (enExample)
AU (1) AU2003248651A1 (enExample)
TW (1) TW587158B (enExample)
WO (1) WO2003106916A2 (enExample)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6804005B2 (en) * 2002-05-02 2004-10-12 Timbre Technologies, Inc. Overlay measurements using zero-order cross polarization measurements
US6775015B2 (en) * 2002-06-18 2004-08-10 Timbre Technologies, Inc. Optical metrology of single features
US6842261B2 (en) * 2002-08-26 2005-01-11 Timbre Technologies, Inc. Integrated circuit profile value determination
US20040207836A1 (en) * 2002-09-27 2004-10-21 Rajeshwar Chhibber High dynamic range optical inspection system and method
US20040090629A1 (en) * 2002-11-08 2004-05-13 Emmanuel Drege Diffraction order selection for optical metrology simulation
FR2849181B1 (fr) * 2002-12-23 2005-12-23 Commissariat Energie Atomique Procede d'etude des reliefs d'une structure par voie optique
US20080246951A1 (en) * 2007-04-09 2008-10-09 Phillip Walsh Method and system for using reflectometry below deep ultra-violet (DUV) wavelengths for measuring properties of diffracting or scattering structures on substrate work-pieces
US8564780B2 (en) 2003-01-16 2013-10-22 Jordan Valley Semiconductors Ltd. Method and system for using reflectometry below deep ultra-violet (DUV) wavelengths for measuring properties of diffracting or scattering structures on substrate work pieces
US7274472B2 (en) * 2003-05-28 2007-09-25 Timbre Technologies, Inc. Resolution enhanced optical metrology
JP3892843B2 (ja) * 2003-11-04 2007-03-14 株式会社東芝 寸法測定方法、寸法測定装置および測定マーク
TWI261927B (en) * 2003-12-03 2006-09-11 Quanta Display Inc Method of manufacturing a thin film transistor array
JP4282500B2 (ja) 2004-01-29 2009-06-24 株式会社東芝 構造検査方法及び半導体装置の製造方法
US20050275850A1 (en) * 2004-05-28 2005-12-15 Timbre Technologies, Inc. Shape roughness measurement in optical metrology
US20080144036A1 (en) 2006-12-19 2008-06-19 Asml Netherlands B.V. Method of measurement, an inspection apparatus and a lithographic apparatus
US7791727B2 (en) 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
KR100625168B1 (ko) * 2004-08-23 2006-09-20 삼성전자주식회사 기판에 형성된 패턴의 검사방법 및 이를 수행하기 위한검사장치
US7391524B1 (en) * 2004-09-13 2008-06-24 N&K Technology, Inc. System and method for efficient characterization of diffracting structures with incident plane parallel to grating lines
JP2008520965A (ja) * 2004-11-16 2008-06-19 コミサリア ア レネルジィ アトミーク 糖末端基を含むシラン化剤及び特に固体支持体の官能化のためのその使用
US7315384B2 (en) * 2005-05-10 2008-01-01 Asml Netherlands B.V. Inspection apparatus and method of inspection
JP4674859B2 (ja) * 2005-10-27 2011-04-20 大日本印刷株式会社 微細マイクロレンズアレイの形状測定方法
US7525672B1 (en) * 2005-12-16 2009-04-28 N&K Technology, Inc. Efficient characterization of symmetrically illuminated symmetric 2-D gratings
US7505147B1 (en) * 2006-05-26 2009-03-17 N&K Technology, Inc. Efficient calculation of grating matrix elements for 2-D diffraction
US7518740B2 (en) * 2006-07-10 2009-04-14 Tokyo Electron Limited Evaluating a profile model to characterize a structure to be examined using optical metrology
US7515283B2 (en) * 2006-07-11 2009-04-07 Tokyo Electron, Ltd. Parallel profile determination in optical metrology
US20080013107A1 (en) * 2006-07-11 2008-01-17 Tokyo Electron Limited Generating a profile model to characterize a structure to be examined using optical metrology
US7469192B2 (en) * 2006-07-11 2008-12-23 Tokyo Electron Ltd. Parallel profile determination for an optical metrology system
US20080129986A1 (en) * 2006-11-30 2008-06-05 Phillip Walsh Method and apparatus for optically measuring periodic structures using orthogonal azimuthal sample orientations
US20080135774A1 (en) * 2006-12-08 2008-06-12 Asml Netherlands B.V. Scatterometer, a lithographic apparatus and a focus analysis method
CN101359612B (zh) * 2007-07-30 2012-07-04 东京毅力科创株式会社 晶片图案结构的检查装置及其计量数据管理方法
CN101359611B (zh) * 2007-07-30 2011-11-09 东京毅力科创株式会社 对光学计量系统的选定变量进行优化
WO2009064670A2 (en) * 2007-11-13 2009-05-22 Zygo Corporation Interferometer utilizing polarization scanning
NL1036468A1 (nl) 2008-02-27 2009-08-31 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
US8126694B2 (en) * 2008-05-02 2012-02-28 Nanometrics Incorporated Modeling conductive patterns using an effective model
JP4834706B2 (ja) * 2008-09-22 2011-12-14 株式会社東芝 構造検査方法
US8560270B2 (en) * 2008-12-09 2013-10-15 Tokyo Electron Limited Rational approximation and continued-fraction approximation approaches for computation efficiency of diffraction signals
US8441639B2 (en) * 2009-09-03 2013-05-14 Kla-Tencor Corp. Metrology systems and methods
US8867041B2 (en) 2011-01-18 2014-10-21 Jordan Valley Semiconductor Ltd Optical vacuum ultra-violet wavelength nanoimprint metrology
US8565379B2 (en) 2011-03-14 2013-10-22 Jordan Valley Semiconductors Ltd. Combining X-ray and VUV analysis of thin film layers
TWI628730B (zh) 2011-11-10 2018-07-01 應用材料股份有限公司 透過雷射繞射測量3d半導體結構之溫度的設備及方法
KR20170092522A (ko) 2014-09-08 2017-08-11 더 리서치 파운데이션 포 더 스테이트 유니버시티 오브 뉴욕 금속 격자 및 이의 측정 방법
US9482519B2 (en) 2014-12-04 2016-11-01 Globalfoundries Inc. Measuring semiconductor device features using stepwise optical metrology
IL252666B (en) * 2014-12-10 2022-06-01 Nova Ltd Test structure for use in metrology measurements of patterns
US9970863B2 (en) * 2015-02-22 2018-05-15 Kla-Tencor Corporation Optical metrology with reduced focus error sensitivity
US11054508B2 (en) * 2017-01-05 2021-07-06 Innovusion Ireland Limited High resolution LiDAR using high frequency pulse firing
JP6918418B2 (ja) 2017-09-08 2021-08-11 株式会社ディスコ ウェーハの加工方法
WO2020146493A1 (en) 2019-01-10 2020-07-16 Innovusion Ireland Limited Lidar systems and methods with beam steering and wide angle signal detection
US12013350B2 (en) 2021-05-05 2024-06-18 Onto Innovation Inc. Effective cell approximation model for logic structures
DE102021205328B3 (de) 2021-05-26 2022-09-29 Carl Zeiss Smt Gmbh Verfahren zur Bestimmung einer Abbildungsqualität eines optischen Systems bei Beleuchtung mit Beleuchtungslicht innerhalb einer zu vermessenden Pupille und Metrologiesystem dafür
US12461041B2 (en) 2022-04-20 2025-11-04 Kla Corporation Measurement of thick films and high aspect ratio structures

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008005002A (ja) * 2006-06-20 2008-01-10 Onkyo Corp スピーカー用ダンパーおよびこれを用いたスピーカー

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0781836B2 (ja) 1987-12-01 1995-09-06 キヤノン株式会社 光学測定装置
JP3550605B2 (ja) 1995-09-25 2004-08-04 株式会社ニコン 位置検出方法、それを用いた露光方法、その露光方法を用いた半導体素子、液晶表示素子又は薄膜磁気ヘッドの製造方法、及び位置検出装置、それを備えた露光装置
US6034378A (en) 1995-02-01 2000-03-07 Nikon Corporation Method of detecting position of mark on substrate, position detection apparatus using this method, and exposure apparatus using this position detection apparatus
US5703692A (en) 1995-08-03 1997-12-30 Bio-Rad Laboratories, Inc. Lens scatterometer system employing source light beam scanning means
US5805290A (en) * 1996-05-02 1998-09-08 International Business Machines Corporation Method of optical metrology of unresolved pattern arrays
US5880838A (en) * 1996-06-05 1999-03-09 California Institute Of California System and method for optically measuring a structure
US5867276A (en) 1997-03-07 1999-02-02 Bio-Rad Laboratories, Inc. Method for broad wavelength scatterometry
US6172349B1 (en) * 1997-03-31 2001-01-09 Kla-Tencor Corporation Autofocusing apparatus and method for high resolution microscope system
CN1145820C (zh) 1997-08-29 2004-04-14 奥林巴斯光学工业株式会社 显微镜透过明视野照明装置
JP4503716B2 (ja) 1997-08-29 2010-07-14 オリンパス株式会社 顕微鏡透過照明装置
US6049220A (en) * 1998-06-10 2000-04-11 Boxer Cross Incorporated Apparatus and method for evaluating a wafer of semiconductor material
JP2000009443A (ja) 1998-06-24 2000-01-14 Dainippon Screen Mfg Co Ltd 形状測定方法及びその装置
US6137570A (en) * 1998-06-30 2000-10-24 Kla-Tencor Corporation System and method for analyzing topological features on a surface
JP2001085314A (ja) * 1999-09-13 2001-03-30 Nikon Corp 露光方法及び装置、デバイスの製造方法、及び露光装置の製造方法
JP2001267211A (ja) 2000-03-16 2001-09-28 Nikon Corp 位置検出方法及び装置、並びに前記位置検出方法を用いた露光方法及び装置
US6429943B1 (en) * 2000-03-29 2002-08-06 Therma-Wave, Inc. Critical dimension analysis with simultaneous multiple angle of incidence measurements
US6943900B2 (en) * 2000-09-15 2005-09-13 Timbre Technologies, Inc. Generation of a library of periodic grating diffraction signals
US7139083B2 (en) * 2000-09-20 2006-11-21 Kla-Tencor Technologies Corp. Methods and systems for determining a composition and a thickness of a specimen
US7106425B1 (en) * 2000-09-20 2006-09-12 Kla-Tencor Technologies Corp. Methods and systems for determining a presence of defects and a thin film characteristic of a specimen
US6775015B2 (en) 2002-06-18 2004-08-10 Timbre Technologies, Inc. Optical metrology of single features

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008005002A (ja) * 2006-06-20 2008-01-10 Onkyo Corp スピーカー用ダンパーおよびこれを用いたスピーカー

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
한국공개특허공보 2005-0027953호

Also Published As

Publication number Publication date
AU2003248651A8 (en) 2003-12-31
TW200402529A (en) 2004-02-16
US20040212812A1 (en) 2004-10-28
US6775015B2 (en) 2004-08-10
WO2003106916A3 (en) 2004-04-15
AU2003248651A1 (en) 2003-12-31
US20080259357A1 (en) 2008-10-23
CN1308651C (zh) 2007-04-04
US20060187468A1 (en) 2006-08-24
US7379192B2 (en) 2008-05-27
US7030999B2 (en) 2006-04-18
TW587158B (en) 2004-05-11
US20030232454A1 (en) 2003-12-18
WO2003106916A2 (en) 2003-12-24
US7586623B2 (en) 2009-09-08
CN1662789A (zh) 2005-08-31
JP2005530144A (ja) 2005-10-06
KR20050010919A (ko) 2005-01-28

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