CN1662789A - 对单一特征的光学度量 - Google Patents
对单一特征的光学度量 Download PDFInfo
- Publication number
- CN1662789A CN1662789A CN038141531A CN03814153A CN1662789A CN 1662789 A CN1662789 A CN 1662789A CN 038141531 A CN038141531 A CN 038141531A CN 03814153 A CN03814153 A CN 03814153A CN 1662789 A CN1662789 A CN 1662789A
- Authority
- CN
- China
- Prior art keywords
- single feature
- feature
- light beam
- optical
- distinguishing mark
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/4788—Diffraction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
Abstract
Description
Claims (55)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/175,207 US6775015B2 (en) | 2002-06-18 | 2002-06-18 | Optical metrology of single features |
US10/175,207 | 2002-06-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1662789A true CN1662789A (zh) | 2005-08-31 |
CN1308651C CN1308651C (zh) | 2007-04-04 |
Family
ID=29733802
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038141531A Expired - Fee Related CN1308651C (zh) | 2002-06-18 | 2003-06-09 | 对单一特征的光学度量 |
Country Status (7)
Country | Link |
---|---|
US (4) | US6775015B2 (zh) |
JP (1) | JP2005530144A (zh) |
KR (1) | KR100796112B1 (zh) |
CN (1) | CN1308651C (zh) |
AU (1) | AU2003248651A1 (zh) |
TW (1) | TW587158B (zh) |
WO (1) | WO2003106916A2 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101359611B (zh) * | 2007-07-30 | 2011-11-09 | 东京毅力科创株式会社 | 对光学计量系统的选定变量进行优化 |
CN101359612B (zh) * | 2007-07-30 | 2012-07-04 | 东京毅力科创株式会社 | 晶片图案结构的检查装置及其计量数据管理方法 |
CN103890925A (zh) * | 2011-11-10 | 2014-06-25 | 应用材料公司 | 经由激光衍射测量3d半导体结构的温度的设备及方法 |
CN107250766A (zh) * | 2015-02-22 | 2017-10-13 | 科磊股份有限公司 | 具有经减小聚焦误差灵敏度的光学度量 |
CN110520757A (zh) * | 2017-01-05 | 2019-11-29 | 图达通爱尔兰有限公司 | 使用高频脉冲射击的高分辨率LiDAR |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6804005B2 (en) * | 2002-05-02 | 2004-10-12 | Timbre Technologies, Inc. | Overlay measurements using zero-order cross polarization measurements |
US6775015B2 (en) * | 2002-06-18 | 2004-08-10 | Timbre Technologies, Inc. | Optical metrology of single features |
US6842261B2 (en) * | 2002-08-26 | 2005-01-11 | Timbre Technologies, Inc. | Integrated circuit profile value determination |
US20040207836A1 (en) * | 2002-09-27 | 2004-10-21 | Rajeshwar Chhibber | High dynamic range optical inspection system and method |
US20040090629A1 (en) * | 2002-11-08 | 2004-05-13 | Emmanuel Drege | Diffraction order selection for optical metrology simulation |
FR2849181B1 (fr) * | 2002-12-23 | 2005-12-23 | Commissariat Energie Atomique | Procede d'etude des reliefs d'une structure par voie optique |
US8564780B2 (en) | 2003-01-16 | 2013-10-22 | Jordan Valley Semiconductors Ltd. | Method and system for using reflectometry below deep ultra-violet (DUV) wavelengths for measuring properties of diffracting or scattering structures on substrate work pieces |
US20080246951A1 (en) * | 2007-04-09 | 2008-10-09 | Phillip Walsh | Method and system for using reflectometry below deep ultra-violet (DUV) wavelengths for measuring properties of diffracting or scattering structures on substrate work-pieces |
US7274472B2 (en) * | 2003-05-28 | 2007-09-25 | Timbre Technologies, Inc. | Resolution enhanced optical metrology |
JP3892843B2 (ja) * | 2003-11-04 | 2007-03-14 | 株式会社東芝 | 寸法測定方法、寸法測定装置および測定マーク |
TWI261927B (en) * | 2003-12-03 | 2006-09-11 | Quanta Display Inc | Method of manufacturing a thin film transistor array |
JP4282500B2 (ja) | 2004-01-29 | 2009-06-24 | 株式会社東芝 | 構造検査方法及び半導体装置の製造方法 |
US20050275850A1 (en) * | 2004-05-28 | 2005-12-15 | Timbre Technologies, Inc. | Shape roughness measurement in optical metrology |
US20080144036A1 (en) | 2006-12-19 | 2008-06-19 | Asml Netherlands B.V. | Method of measurement, an inspection apparatus and a lithographic apparatus |
US7791727B2 (en) * | 2004-08-16 | 2010-09-07 | Asml Netherlands B.V. | Method and apparatus for angular-resolved spectroscopic lithography characterization |
KR100625168B1 (ko) * | 2004-08-23 | 2006-09-20 | 삼성전자주식회사 | 기판에 형성된 패턴의 검사방법 및 이를 수행하기 위한검사장치 |
US7391524B1 (en) * | 2004-09-13 | 2008-06-24 | N&K Technology, Inc. | System and method for efficient characterization of diffracting structures with incident plane parallel to grating lines |
US20090142854A1 (en) * | 2004-11-16 | 2009-06-04 | Robert Veronique | Silanizing agents comprising a saccharide end group and uses thereof, in particular for the functionalization of solid supports |
US7315384B2 (en) * | 2005-05-10 | 2008-01-01 | Asml Netherlands B.V. | Inspection apparatus and method of inspection |
JP4674859B2 (ja) * | 2005-10-27 | 2011-04-20 | 大日本印刷株式会社 | 微細マイクロレンズアレイの形状測定方法 |
US7525672B1 (en) * | 2005-12-16 | 2009-04-28 | N&K Technology, Inc. | Efficient characterization of symmetrically illuminated symmetric 2-D gratings |
US7505147B1 (en) * | 2006-05-26 | 2009-03-17 | N&K Technology, Inc. | Efficient calculation of grating matrix elements for 2-D diffraction |
US7518740B2 (en) * | 2006-07-10 | 2009-04-14 | Tokyo Electron Limited | Evaluating a profile model to characterize a structure to be examined using optical metrology |
US7469192B2 (en) * | 2006-07-11 | 2008-12-23 | Tokyo Electron Ltd. | Parallel profile determination for an optical metrology system |
US20080013107A1 (en) * | 2006-07-11 | 2008-01-17 | Tokyo Electron Limited | Generating a profile model to characterize a structure to be examined using optical metrology |
US7515283B2 (en) * | 2006-07-11 | 2009-04-07 | Tokyo Electron, Ltd. | Parallel profile determination in optical metrology |
US20080129986A1 (en) * | 2006-11-30 | 2008-06-05 | Phillip Walsh | Method and apparatus for optically measuring periodic structures using orthogonal azimuthal sample orientations |
US20080135774A1 (en) * | 2006-12-08 | 2008-06-12 | Asml Netherlands B.V. | Scatterometer, a lithographic apparatus and a focus analysis method |
JP5222954B2 (ja) * | 2007-11-13 | 2013-06-26 | ザイゴ コーポレーション | 偏光スキャンを利用した干渉計 |
NL1036468A1 (nl) * | 2008-02-27 | 2009-08-31 | Asml Netherlands Bv | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method. |
US8126694B2 (en) * | 2008-05-02 | 2012-02-28 | Nanometrics Incorporated | Modeling conductive patterns using an effective model |
JP4834706B2 (ja) * | 2008-09-22 | 2011-12-14 | 株式会社東芝 | 構造検査方法 |
US8560270B2 (en) * | 2008-12-09 | 2013-10-15 | Tokyo Electron Limited | Rational approximation and continued-fraction approximation approaches for computation efficiency of diffraction signals |
US8441639B2 (en) * | 2009-09-03 | 2013-05-14 | Kla-Tencor Corp. | Metrology systems and methods |
US8867041B2 (en) | 2011-01-18 | 2014-10-21 | Jordan Valley Semiconductor Ltd | Optical vacuum ultra-violet wavelength nanoimprint metrology |
US8565379B2 (en) | 2011-03-14 | 2013-10-22 | Jordan Valley Semiconductors Ltd. | Combining X-ray and VUV analysis of thin film layers |
KR20170092522A (ko) | 2014-09-08 | 2017-08-11 | 더 리서치 파운데이션 포 더 스테이트 유니버시티 오브 뉴욕 | 금속 격자 및 이의 측정 방법 |
US9482519B2 (en) | 2014-12-04 | 2016-11-01 | Globalfoundries Inc. | Measuring semiconductor device features using stepwise optical metrology |
US10216098B2 (en) | 2014-12-10 | 2019-02-26 | Nova Measuring Instruments Ltd. | Test structure for use in metrology measurements of patterns |
US20220357286A1 (en) * | 2021-05-05 | 2022-11-10 | Onto Innovation Inc. | Effective cell approximation model for logic structures |
DE102021205328B3 (de) * | 2021-05-26 | 2022-09-29 | Carl Zeiss Smt Gmbh | Verfahren zur Bestimmung einer Abbildungsqualität eines optischen Systems bei Beleuchtung mit Beleuchtungslicht innerhalb einer zu vermessenden Pupille und Metrologiesystem dafür |
US20230341337A1 (en) * | 2022-04-20 | 2023-10-26 | Kla Corporation | Measurement of thick films and high aspect ratio structures |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0781836B2 (ja) | 1987-12-01 | 1995-09-06 | キヤノン株式会社 | 光学測定装置 |
JP3550605B2 (ja) | 1995-09-25 | 2004-08-04 | 株式会社ニコン | 位置検出方法、それを用いた露光方法、その露光方法を用いた半導体素子、液晶表示素子又は薄膜磁気ヘッドの製造方法、及び位置検出装置、それを備えた露光装置 |
US6034378A (en) | 1995-02-01 | 2000-03-07 | Nikon Corporation | Method of detecting position of mark on substrate, position detection apparatus using this method, and exposure apparatus using this position detection apparatus |
US5703692A (en) | 1995-08-03 | 1997-12-30 | Bio-Rad Laboratories, Inc. | Lens scatterometer system employing source light beam scanning means |
US5805290A (en) * | 1996-05-02 | 1998-09-08 | International Business Machines Corporation | Method of optical metrology of unresolved pattern arrays |
US5880838A (en) * | 1996-06-05 | 1999-03-09 | California Institute Of California | System and method for optically measuring a structure |
US5867276A (en) | 1997-03-07 | 1999-02-02 | Bio-Rad Laboratories, Inc. | Method for broad wavelength scatterometry |
US6172349B1 (en) * | 1997-03-31 | 2001-01-09 | Kla-Tencor Corporation | Autofocusing apparatus and method for high resolution microscope system |
JP4503716B2 (ja) | 1997-08-29 | 2010-07-14 | オリンパス株式会社 | 顕微鏡透過照明装置 |
EP1008884B1 (en) | 1997-08-29 | 2006-09-27 | Olympus Optical Co., Ltd. | Transmission illuminator for microscopes |
US6049220A (en) * | 1998-06-10 | 2000-04-11 | Boxer Cross Incorporated | Apparatus and method for evaluating a wafer of semiconductor material |
JP2000009443A (ja) | 1998-06-24 | 2000-01-14 | Dainippon Screen Mfg Co Ltd | 形状測定方法及びその装置 |
US6137570A (en) * | 1998-06-30 | 2000-10-24 | Kla-Tencor Corporation | System and method for analyzing topological features on a surface |
JP2001085314A (ja) * | 1999-09-13 | 2001-03-30 | Nikon Corp | 露光方法及び装置、デバイスの製造方法、及び露光装置の製造方法 |
JP2001267211A (ja) | 2000-03-16 | 2001-09-28 | Nikon Corp | 位置検出方法及び装置、並びに前記位置検出方法を用いた露光方法及び装置 |
US6429943B1 (en) * | 2000-03-29 | 2002-08-06 | Therma-Wave, Inc. | Critical dimension analysis with simultaneous multiple angle of incidence measurements |
US6943900B2 (en) * | 2000-09-15 | 2005-09-13 | Timbre Technologies, Inc. | Generation of a library of periodic grating diffraction signals |
US7106425B1 (en) * | 2000-09-20 | 2006-09-12 | Kla-Tencor Technologies Corp. | Methods and systems for determining a presence of defects and a thin film characteristic of a specimen |
US6633831B2 (en) * | 2000-09-20 | 2003-10-14 | Kla Tencor Technologies | Methods and systems for determining a critical dimension and a thin film characteristic of a specimen |
US6775015B2 (en) | 2002-06-18 | 2004-08-10 | Timbre Technologies, Inc. | Optical metrology of single features |
JP2008005002A (ja) * | 2006-06-20 | 2008-01-10 | Onkyo Corp | スピーカー用ダンパーおよびこれを用いたスピーカー |
-
2002
- 2002-06-18 US US10/175,207 patent/US6775015B2/en not_active Expired - Lifetime
-
2003
- 2003-05-28 TW TW092114373A patent/TW587158B/zh not_active IP Right Cessation
- 2003-06-09 JP JP2004513691A patent/JP2005530144A/ja active Pending
- 2003-06-09 AU AU2003248651A patent/AU2003248651A1/en not_active Abandoned
- 2003-06-09 KR KR1020047020328A patent/KR100796112B1/ko not_active IP Right Cessation
- 2003-06-09 WO PCT/US2003/018186 patent/WO2003106916A2/en active Application Filing
- 2003-06-09 CN CNB038141531A patent/CN1308651C/zh not_active Expired - Fee Related
-
2004
- 2004-05-24 US US10/853,060 patent/US7030999B2/en not_active Expired - Fee Related
-
2006
- 2006-04-14 US US11/404,645 patent/US7379192B2/en not_active Expired - Fee Related
-
2008
- 2008-05-27 US US12/127,640 patent/US7586623B2/en not_active Expired - Fee Related
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101359611B (zh) * | 2007-07-30 | 2011-11-09 | 东京毅力科创株式会社 | 对光学计量系统的选定变量进行优化 |
CN101359612B (zh) * | 2007-07-30 | 2012-07-04 | 东京毅力科创株式会社 | 晶片图案结构的检查装置及其计量数据管理方法 |
CN103890925A (zh) * | 2011-11-10 | 2014-06-25 | 应用材料公司 | 经由激光衍射测量3d半导体结构的温度的设备及方法 |
CN103890925B (zh) * | 2011-11-10 | 2017-05-17 | 应用材料公司 | 经由激光衍射测量3d半导体结构的温度的设备及方法 |
CN107421642A (zh) * | 2011-11-10 | 2017-12-01 | 应用材料公司 | 经由激光衍射测量3d半导体结构的温度的设备及方法 |
US9909925B2 (en) | 2011-11-10 | 2018-03-06 | Applied Materials, Inc. | Apparatus and method to measure temperature of 3D semiconductor structures via laser diffraction |
CN107250766A (zh) * | 2015-02-22 | 2017-10-13 | 科磊股份有限公司 | 具有经减小聚焦误差灵敏度的光学度量 |
CN107250766B (zh) * | 2015-02-22 | 2020-11-06 | 科磊股份有限公司 | 具有经减小聚焦误差灵敏度的光学度量 |
CN110520757A (zh) * | 2017-01-05 | 2019-11-29 | 图达通爱尔兰有限公司 | 使用高频脉冲射击的高分辨率LiDAR |
CN110520757B (zh) * | 2017-01-05 | 2023-11-03 | 图达通智能美国有限公司 | 使用高频脉冲射击的高分辨率LiDAR |
Also Published As
Publication number | Publication date |
---|---|
JP2005530144A (ja) | 2005-10-06 |
WO2003106916A2 (en) | 2003-12-24 |
WO2003106916A3 (en) | 2004-04-15 |
US7030999B2 (en) | 2006-04-18 |
AU2003248651A8 (en) | 2003-12-31 |
TW587158B (en) | 2004-05-11 |
US20060187468A1 (en) | 2006-08-24 |
AU2003248651A1 (en) | 2003-12-31 |
TW200402529A (en) | 2004-02-16 |
US20030232454A1 (en) | 2003-12-18 |
KR20050010919A (ko) | 2005-01-28 |
US20080259357A1 (en) | 2008-10-23 |
US6775015B2 (en) | 2004-08-10 |
US20040212812A1 (en) | 2004-10-28 |
CN1308651C (zh) | 2007-04-04 |
US7379192B2 (en) | 2008-05-27 |
US7586623B2 (en) | 2009-09-08 |
KR100796112B1 (ko) | 2008-01-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1308651C (zh) | 对单一特征的光学度量 | |
EP0526982B1 (en) | Fine structure evaluation apparatus and method | |
CN102713504B (zh) | 表面形状测定方法及表面形状测定装置 | |
CN1799045A (zh) | 使用机器学习系统的对在半导体晶片上形成的结构的光学计量 | |
CN1632448A (zh) | 三维超分辨共焦阵列扫描显微探测方法及装置 | |
CN108603848B (zh) | 用于光学三维形貌测量的方法及系统 | |
KR20160077161A (ko) | 엑스레이 계측을 사용하는 반도체 디바이스 오버레이를 측정하기 위한 방법들 및 장치 | |
CN1287643A (zh) | 电子组件的三维检测方法和设备 | |
CN106802233B (zh) | 一种微透镜阵列测试装置及方法 | |
TWI791866B (zh) | 量測一度量目標之方法,電腦程式產品,度量模組,以及度量工具 | |
US20130286191A1 (en) | Inspection apparatus | |
CN102607820A (zh) | 一种微透镜阵列焦距测量方法 | |
JP2004191092A (ja) | 3次元情報取得システム | |
KR20220112175A (ko) | 파라미터 추정을 제공하는 장치 및 방법 | |
TWI640761B (zh) | 散射量測系統及其操作方法 | |
CN100343725C (zh) | 采用全息图调准光学系统的方法及其装置 | |
CN109799672B (zh) | 非完善成像镜头的检测装置和方法 | |
CN102736428B (zh) | 一种调焦调平装置及方法 | |
CN1813338A (zh) | 对焦测试掩模、对焦测定方法和曝光装置 | |
CN109883656B (zh) | 非完善成像镜头的检测装置和方法 | |
CN1182384C (zh) | 测量薄膜折射率的方法及装置 | |
CN1786662A (zh) | 双孔式激光束散角测试装置 | |
CN2890863Y (zh) | 激光光束质量m2因子实时检测仪 | |
CN1313817C (zh) | 多功能光学质量检测装置 | |
CN111649693B (zh) | 一种样品形貌测量装置及方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: TOKYO YILI KECHUANG USA INC. Free format text: FORMER OWNER: TEL TIMBRE TECHNOLOGY INC. Effective date: 20140423 |
|
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee |
Owner name: TEL TIMBRE TECHNOLOGY INC. Free format text: FORMER NAME: TIMBRE TECHNOLOGIES, INC. |
|
CP01 | Change in the name or title of a patent holder |
Address after: California, USA Patentee after: TEL sound quality technology Address before: California, USA Patentee before: Timbre Technologies, Inc. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20140423 Address after: Texas, USA Patentee after: Tokyo Yili Kechuang company in the United States Address before: California, USA Patentee before: TEL sound quality technology |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070404 Termination date: 20150609 |
|
EXPY | Termination of patent right or utility model |