KR100790893B1 - 볼록한 저항성 팁을 구비한 반도체 탐침 및 그 제조방법 - Google Patents

볼록한 저항성 팁을 구비한 반도체 탐침 및 그 제조방법 Download PDF

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Publication number
KR100790893B1
KR100790893B1 KR1020060102467A KR20060102467A KR100790893B1 KR 100790893 B1 KR100790893 B1 KR 100790893B1 KR 1020060102467 A KR1020060102467 A KR 1020060102467A KR 20060102467 A KR20060102467 A KR 20060102467A KR 100790893 B1 KR100790893 B1 KR 100790893B1
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South Korea
Prior art keywords
substrate
tip
forming
impurity
resistive tip
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KR1020060102467A
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English (en)
Korean (ko)
Inventor
정주환
이재홍
신형철
김준수
홍승범
Original Assignee
삼성전자주식회사
재단법인서울대학교산학협력재단
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Priority to KR1020060102467A priority Critical patent/KR100790893B1/ko
Priority to CN2007100966318A priority patent/CN101165816B/zh
Priority to US11/772,441 priority patent/US7671616B2/en
Priority to JP2007235898A priority patent/JP4990728B2/ja
Application granted granted Critical
Publication of KR100790893B1 publication Critical patent/KR100790893B1/ko
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
    • G01Q60/30—Scanning potential microscopy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Nanotechnology (AREA)
  • Radiology & Medical Imaging (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)
  • Semiconductor Memories (AREA)
KR1020060102467A 2006-10-20 2006-10-20 볼록한 저항성 팁을 구비한 반도체 탐침 및 그 제조방법 Expired - Fee Related KR100790893B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020060102467A KR100790893B1 (ko) 2006-10-20 2006-10-20 볼록한 저항성 팁을 구비한 반도체 탐침 및 그 제조방법
CN2007100966318A CN101165816B (zh) 2006-10-20 2007-04-19 具有浮凸电阻性尖端的半导体探针及其制造方法
US11/772,441 US7671616B2 (en) 2006-10-20 2007-07-02 Semiconductor probe having embossed resistive tip and method of fabricating the same
JP2007235898A JP4990728B2 (ja) 2006-10-20 2007-09-11 凸状の抵抗性チップを備えた半導体探針およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060102467A KR100790893B1 (ko) 2006-10-20 2006-10-20 볼록한 저항성 팁을 구비한 반도체 탐침 및 그 제조방법

Publications (1)

Publication Number Publication Date
KR100790893B1 true KR100790893B1 (ko) 2008-01-03

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Family Applications (1)

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KR1020060102467A Expired - Fee Related KR100790893B1 (ko) 2006-10-20 2006-10-20 볼록한 저항성 팁을 구비한 반도체 탐침 및 그 제조방법

Country Status (4)

Country Link
US (1) US7671616B2 (OSRAM)
JP (1) JP4990728B2 (OSRAM)
KR (1) KR100790893B1 (OSRAM)
CN (1) CN101165816B (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100790895B1 (ko) * 2006-11-16 2008-01-03 삼성전자주식회사 저항성 팁을 구비한 반도체 탐침 및 그 제조방법
US8715981B2 (en) * 2009-01-27 2014-05-06 Purdue Research Foundation Electrochemical biosensor
WO2017014307A1 (ja) * 2015-07-23 2017-01-26 富士フイルム株式会社 積層体
BR112018017173A2 (pt) 2016-02-23 2019-01-02 Univ Colorado Regents composições e métodos para a produção e uso de formulações imunogênicas termoestáveis com compatibilidade aumentada de uso como vacinas contra um ou mais patógenos

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060022411A (ko) * 2004-09-07 2006-03-10 삼성전자주식회사 저항성 팁을 구비한 반도체 탐침 및 그 제조방법
KR20060083066A (ko) * 2005-01-15 2006-07-20 삼성전자주식회사 저항성 팁을 구비한 반도체 탐침 및 그 제조방법
KR20070025628A (ko) * 2005-09-03 2007-03-08 삼성전자주식회사 고분해능 저항성 팁을 구비한 반도체 탐침 및 그 제조방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3572030D1 (en) * 1985-03-07 1989-09-07 Ibm Scanning tunneling microscope
JP3198355B2 (ja) * 1991-05-28 2001-08-13 キヤノン株式会社 微小変位素子及びこれを用いた走査型トンネル顕微鏡、情報処理装置
US5475318A (en) * 1993-10-29 1995-12-12 Robert B. Marcus Microprobe
US5923033A (en) * 1994-09-14 1999-07-13 Olympus Optical Co., Ltd. Integrated SPM sensor having a photodetector mounted on a probe on a free end of a supported cantilever
US6028436A (en) * 1997-12-02 2000-02-22 Micron Technology, Inc. Method for forming coaxial silicon interconnects
KR100366701B1 (ko) * 1999-11-09 2003-01-06 삼성전자 주식회사 전계 효과 트랜지스터 채널 구조가 형성된 스캐닝 프로브마이크로스코프의 탐침 및 그 제작 방법
US6479892B1 (en) * 2000-10-31 2002-11-12 Motorola, Inc. Enhanced probe for gathering data from semiconductor devices
DE10155930B4 (de) * 2001-11-14 2020-09-24 Nano Analytik Gmbh Feldeffekttransistor-Sensor
KR100468850B1 (ko) * 2002-05-08 2005-01-29 삼성전자주식회사 저항성 팁을 구비하는 반도체 탐침 및 그 제조방법 및 이를 구비하는 정보 기록장치, 정보재생장치 및 정보측정장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060022411A (ko) * 2004-09-07 2006-03-10 삼성전자주식회사 저항성 팁을 구비한 반도체 탐침 및 그 제조방법
KR20060083066A (ko) * 2005-01-15 2006-07-20 삼성전자주식회사 저항성 팁을 구비한 반도체 탐침 및 그 제조방법
KR20070025628A (ko) * 2005-09-03 2007-03-08 삼성전자주식회사 고분해능 저항성 팁을 구비한 반도체 탐침 및 그 제조방법

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
공개특 2006-0022411호(2006.03.10)

Also Published As

Publication number Publication date
JP4990728B2 (ja) 2012-08-01
JP2008102128A (ja) 2008-05-01
US20080094089A1 (en) 2008-04-24
CN101165816A (zh) 2008-04-23
CN101165816B (zh) 2011-02-23
US7671616B2 (en) 2010-03-02

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