KR100781099B1 - 리소그래피 시스템의 평가방법, 기판처리장치의 조정방법,리소그래피 시스템, 및 노광장치 - Google Patents

리소그래피 시스템의 평가방법, 기판처리장치의 조정방법,리소그래피 시스템, 및 노광장치 Download PDF

Info

Publication number
KR100781099B1
KR100781099B1 KR1020010022329A KR20010022329A KR100781099B1 KR 100781099 B1 KR100781099 B1 KR 100781099B1 KR 1020010022329 A KR1020010022329 A KR 1020010022329A KR 20010022329 A KR20010022329 A KR 20010022329A KR 100781099 B1 KR100781099 B1 KR 100781099B1
Authority
KR
South Korea
Prior art keywords
substrate
photosensitive material
developing
pattern
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020010022329A
Other languages
English (en)
Korean (ko)
Other versions
KR20010098873A (ko
Inventor
이마이유지
Original Assignee
가부시키가이샤 니콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 니콘 filed Critical 가부시키가이샤 니콘
Publication of KR20010098873A publication Critical patent/KR20010098873A/ko
Application granted granted Critical
Publication of KR100781099B1 publication Critical patent/KR100781099B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0474—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
KR1020010022329A 2000-04-25 2001-04-25 리소그래피 시스템의 평가방법, 기판처리장치의 조정방법,리소그래피 시스템, 및 노광장치 Expired - Lifetime KR100781099B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000-124506 2000-04-25
JP2000124506 2000-04-25
JP2001-126644 2001-04-24
JP2001126644A JP2002015992A (ja) 2000-04-25 2001-04-24 リソグラフィ・プロセス及びリソグラフィ・システムの評価方法、基板処理装置の調整方法、リソグラフィ・システム、露光方法及び装置、並びに感光材料の状態の測定方法

Publications (2)

Publication Number Publication Date
KR20010098873A KR20010098873A (ko) 2001-11-08
KR100781099B1 true KR100781099B1 (ko) 2007-11-30

Family

ID=26590755

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010022329A Expired - Lifetime KR100781099B1 (ko) 2000-04-25 2001-04-25 리소그래피 시스템의 평가방법, 기판처리장치의 조정방법,리소그래피 시스템, 및 노광장치

Country Status (3)

Country Link
JP (1) JP2002015992A (https=)
KR (1) KR100781099B1 (https=)
TW (1) TW527638B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160025457A (ko) * 2014-08-27 2016-03-08 캐논 가부시끼가이샤 평가용 마스크, 평가 방법, 노광 장치 및 물품의 제조 방법

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003218022A (ja) * 2002-01-28 2003-07-31 Tokyo Electron Ltd 基板処理方法及び基板処理装置
KR100528971B1 (ko) * 2003-05-02 2005-11-16 한국전자통신연구원 전자빔 리소그라피 시스템
JP2004363085A (ja) * 2003-05-09 2004-12-24 Ebara Corp 荷電粒子線による検査装置及びその検査装置を用いたデバイス製造方法
WO2019231518A1 (en) * 2018-05-31 2019-12-05 Applied Materials, Inc. Multi-substrate processing on digital lithography systems
CN113504711B (zh) * 2021-06-28 2023-05-02 上海华虹宏力半导体制造有限公司 光刻显影的检测方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4908656A (en) * 1988-01-21 1990-03-13 Nikon Corporation Method of dimension measurement for a pattern formed by exposure apparatus, and method for setting exposure conditions and for inspecting exposure precision
JPH04101412A (ja) * 1990-08-20 1992-04-02 Matsushita Electric Ind Co Ltd レジスト塗布評価方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2560371B2 (ja) * 1988-01-05 1996-12-04 株式会社ニコン 基板処理システム
JP2580668B2 (ja) * 1988-01-21 1997-02-12 株式会社ニコン 露光方法、露光条件測定方法及ぴパターン測定方法
JPH0289305A (ja) * 1988-09-27 1990-03-29 Nikon Corp リソグラフィ装置
JPH04168715A (ja) * 1990-10-31 1992-06-16 Nec Yamagata Ltd フォトレジストパターン形成装置
JPH05102031A (ja) * 1991-10-04 1993-04-23 Fujitsu Ltd 感光性被膜の感度測定法及び耐蝕性被膜の形成法
US5283141A (en) * 1992-03-05 1994-02-01 National Semiconductor Photolithography control system and method using latent image measurements
JP3058541B2 (ja) * 1993-08-31 2000-07-04 ホーヤ株式会社 レジストパターン形成条件決定方法及びレジストパターン形成方法
JPH09218500A (ja) * 1996-02-14 1997-08-19 Dainippon Printing Co Ltd レジストパターンの作製方法
JPH09232223A (ja) * 1996-02-19 1997-09-05 Canon Inc アライメント方法
JPH09257457A (ja) * 1996-03-18 1997-10-03 Matsushita Electron Corp パターン形状計測方法およびパターン位置計測方法
JPH10260010A (ja) * 1997-03-19 1998-09-29 Nikon Corp マーク計測方法及び装置
JP4253860B2 (ja) * 1998-04-15 2009-04-15 ソニー株式会社 露光方法及び露光装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4908656A (en) * 1988-01-21 1990-03-13 Nikon Corporation Method of dimension measurement for a pattern formed by exposure apparatus, and method for setting exposure conditions and for inspecting exposure precision
JPH04101412A (ja) * 1990-08-20 1992-04-02 Matsushita Electric Ind Co Ltd レジスト塗布評価方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160025457A (ko) * 2014-08-27 2016-03-08 캐논 가부시끼가이샤 평가용 마스크, 평가 방법, 노광 장치 및 물품의 제조 방법
CN105388699A (zh) * 2014-08-27 2016-03-09 佳能株式会社 评价用掩模、评价方法、曝光装置以及物品的制造方法
KR101952990B1 (ko) * 2014-08-27 2019-02-27 캐논 가부시끼가이샤 평가용 마스크, 평가 방법, 노광 장치 및 물품의 제조 방법

Also Published As

Publication number Publication date
TW527638B (en) 2003-04-11
KR20010098873A (ko) 2001-11-08
JP2002015992A (ja) 2002-01-18

Similar Documents

Publication Publication Date Title
TWI464543B (zh) 檢驗方法及裝置、微影裝置、微影處理單元及器件製造方法
US6737207B2 (en) Method for evaluating lithography system and method for adjusting substrate-processing apparatus
KR100599932B1 (ko) 광학 결상 시스템에서의 수차 측정 방법
JP4136067B2 (ja) 検出装置及びそれを用いた露光装置
CN101109910B (zh) 检查方法及设备与光刻设备及器件制造方法
US11906906B2 (en) Metrology method and associated metrology and lithographic apparatuses
TWI389137B (zh) 形成一用來校正度量衡工具之基底的方法、校正基底及度量衡工具校正方法
JP5288808B2 (ja) 測定方法、検査装置およびリソグラフィ装置
KR101257453B1 (ko) 리소그래피에 사용하는 검사 방법
US20060139592A1 (en) Latent overlay metrology
NL2007052A (en) Calibration method and inspection apparatus.
TW201506349A (zh) 量測疊對誤差的方法及器件製造方法
WO2005008754A1 (ja) フレア計測方法、露光方法、及びフレア計測用のマスク
JP4924421B2 (ja) センサの校正方法、露光方法、露光装置、デバイス製造方法、および反射型マスク
TW200842520A (en) Measuring apparatus, projection exposure apparatus having the same, and device manufacturing method
KR100781099B1 (ko) 리소그래피 시스템의 평가방법, 기판처리장치의 조정방법,리소그래피 시스템, 및 노광장치
US8416389B2 (en) Exposure apparatus and method of manufacturing device
CN115210650A (zh) 用于推断局部均匀性度量的方法
JP3651630B2 (ja) 投影露光方法及び投影露光装置
TWI752647B (zh) 用於推斷例如聚焦之處理參數之方法與相關聯之設備及製造方法
JPH10335234A (ja) 投影露光装置
US10222293B2 (en) Optical characteristic measuring method, optical characteristic adjusting method, exposure apparatus, exposing method, and exposure apparatus manufacturing method by detecting a light amount of measuring light
CN113544588B (zh) 对准方法和相关联的量测装置
JP2010199453A (ja) 検出方法、光学特性計測方法、露光方法及び露光装置、並びにデバイス製造方法
US20100177290A1 (en) Optical characteristic measuring method, optical characteristic adjusting method, exposure apparatus, exposing method, and exposure apparatus manufacturing method

Legal Events

Date Code Title Description
R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

G170 Re-publication after modification of scope of protection [patent]
PG1701 Publication of correction

St.27 status event code: A-5-5-P10-P19-oth-PG1701

Patent document republication publication date: 20080415

Republication note text: Request for Correction Notice (Document Request)

Gazette number: 1007810990000

Gazette reference publication date: 20071130

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20121114

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20131031

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20141103

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20151102

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20161028

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20171030

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

FPAY Annual fee payment

Payment date: 20181119

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

FPAY Annual fee payment

Payment date: 20191118

Year of fee payment: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

PC1801 Expiration of term

St.27 status event code: N-4-6-H10-H14-oth-PC1801

Not in force date: 20210426

Ip right cessation event data comment text: Termination Category : EXPIRATION_OF_DURATION

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000