KR100773995B1 - 선 개구수 제어부를 갖는 조명 시스템을 사용하여 리소그래피 장치의 선 폭 제어를 개선하기 위한 장치 및 방법 - Google Patents

선 개구수 제어부를 갖는 조명 시스템을 사용하여 리소그래피 장치의 선 폭 제어를 개선하기 위한 장치 및 방법 Download PDF

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Publication number
KR100773995B1
KR100773995B1 KR1020030025724A KR20030025724A KR100773995B1 KR 100773995 B1 KR100773995 B1 KR 100773995B1 KR 1020030025724 A KR1020030025724 A KR 1020030025724A KR 20030025724 A KR20030025724 A KR 20030025724A KR 100773995 B1 KR100773995 B1 KR 100773995B1
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KR
South Korea
Prior art keywords
optical element
electromagnetic energy
lenslets
optical
dimensional
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KR1020030025724A
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English (en)
Korean (ko)
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KR20040002504A (ko
Inventor
코스톤스코트디.
트사코야네스제임즈지.
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에이에스엠엘 유에스, 인크.
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020030025724A 2002-04-23 2003-04-23 선 개구수 제어부를 갖는 조명 시스템을 사용하여 리소그래피 장치의 선 폭 제어를 개선하기 위한 장치 및 방법 KR100773995B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/127,506 2002-04-23
US10/127,506 US6784976B2 (en) 2002-04-23 2002-04-23 System and method for improving line width control in a lithography device using an illumination system having pre-numerical aperture control

Publications (2)

Publication Number Publication Date
KR20040002504A KR20040002504A (ko) 2004-01-07
KR100773995B1 true KR100773995B1 (ko) 2007-11-08

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020030025724A KR100773995B1 (ko) 2002-04-23 2003-04-23 선 개구수 제어부를 갖는 조명 시스템을 사용하여 리소그래피 장치의 선 폭 제어를 개선하기 위한 장치 및 방법

Country Status (7)

Country Link
US (1) US6784976B2 (fr)
EP (1) EP1357431A3 (fr)
JP (1) JP2003318106A (fr)
KR (1) KR100773995B1 (fr)
CN (1) CN1307485C (fr)
SG (1) SG116490A1 (fr)
TW (1) TWI299880B (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6888615B2 (en) * 2002-04-23 2005-05-03 Asml Holding N.V. System and method for improving linewidth control in a lithography device by varying the angular distribution of light in an illuminator as a function of field position
US6842223B2 (en) 2003-04-11 2005-01-11 Nikon Precision Inc. Enhanced illuminator for use in photolithographic systems
EP1517183A1 (fr) * 2003-08-29 2005-03-23 ASML Netherlands B.V. Appareil lithographique, procédé pour la production d'un dispositif et dispositif produit par ce procédé
KR101134174B1 (ko) 2005-03-15 2012-04-09 칼 짜이스 에스엠티 게엠베하 투사 노광 방법 및 이를 위한 투사 노광 시스템
WO2007018464A2 (fr) * 2005-08-08 2007-02-15 Micronic Laser Systems Ab Procede et appareil d'impression par projection
US7934172B2 (en) 2005-08-08 2011-04-26 Micronic Laser Systems Ab SLM lithography: printing to below K1=.30 without previous OPC processing
KR100712997B1 (ko) * 2005-09-30 2007-05-02 주식회사 하이닉스반도체 수직 및 수평 임계치수 차이를 조절하기 위한 노광시스템및 이를 이용한 노광방법
US7948606B2 (en) * 2006-04-13 2011-05-24 Asml Netherlands B.V. Moving beam with respect to diffractive optics in order to reduce interference patterns
KR101470769B1 (ko) 2010-08-30 2014-12-09 칼 짜이스 에스엠티 게엠베하 마이크로리소그래픽 투영 노광 장치의 조명 시스템
KR101813307B1 (ko) 2011-01-29 2017-12-28 칼 짜이스 에스엠티 게엠베하 마이크로리소그래픽 투영 노광 장치의 조명 시스템
KR101658985B1 (ko) 2015-01-30 2016-09-23 한국기계연구원 리소그래피용 광학계 장치
WO2016184560A1 (fr) * 2015-05-21 2016-11-24 Carl Zeiss Smt Gmbh Procédé de fonctionnement d'appareil de projection microlitographique

Citations (2)

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Publication number Priority date Publication date Assignee Title
US5631721A (en) 1995-05-24 1997-05-20 Svg Lithography Systems, Inc. Hybrid illumination system for use in photolithography
US6573975B2 (en) 2001-04-04 2003-06-03 Pradeep K. Govil DUV scanner linewidth control by mask error factor compensation

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JPS6461716A (en) * 1987-08-31 1989-03-08 Canon Kk Illuminator
JPH05217855A (ja) * 1992-02-01 1993-08-27 Nikon Corp 露光用照明装置
US5329336A (en) * 1992-07-06 1994-07-12 Nikon Corporation Exposure method and apparatus
JP2917704B2 (ja) * 1992-10-01 1999-07-12 日本電気株式会社 露光装置
US5383000A (en) * 1992-11-24 1995-01-17 General Signal Corporation Partial coherence varier for microlithographic system
US5598250A (en) * 1994-03-07 1997-01-28 Hyundai Electronics Industries Co., Ltd. Prefabricated modified illumination apparatus for forming fine patterns in a semiconductor device
JP3571397B2 (ja) * 1995-02-20 2004-09-29 シャープ株式会社 光源フィルタ、それを用いた投影露光装置および投影露光方法
US5724122A (en) * 1995-05-24 1998-03-03 Svg Lithography Systems, Inc. Illumination system having spatially separate vertical and horizontal image planes for use in photolithography
US5896188A (en) * 1996-11-25 1999-04-20 Svg Lithography Systems, Inc. Reduction of pattern noise in scanning lithographic system illuminators
US6259513B1 (en) * 1996-11-25 2001-07-10 Svg Lithography Systems, Inc. Illumination system with spatially controllable partial coherence
US6628370B1 (en) * 1996-11-25 2003-09-30 Mccullough Andrew W. Illumination system with spatially controllable partial coherence compensating for line width variances in a photolithographic system
US6013401A (en) * 1997-03-31 2000-01-11 Svg Lithography Systems, Inc. Method of controlling illumination field to reduce line width variation
US5966202A (en) * 1997-03-31 1999-10-12 Svg Lithography Systems, Inc. Adjustable slit
DE69931690T2 (de) * 1998-04-08 2007-06-14 Asml Netherlands B.V. Lithographischer Apparat
EP0949541B1 (fr) * 1998-04-08 2006-06-07 ASML Netherlands B.V. Appareil lithographique
AU2940600A (en) * 1999-03-24 2000-10-09 Nikon Corporation Exposure method and apparatus
JP2001267205A (ja) * 2000-03-15 2001-09-28 Nec Corp 露光装置
JP4545874B2 (ja) * 2000-04-03 2010-09-15 キヤノン株式会社 照明光学系、および該照明光学系を備えた露光装置と該露光装置によるデバイスの製造方法
JP2002043214A (ja) * 2000-07-26 2002-02-08 Toshiba Corp 走査型露光方法
JP2002075815A (ja) * 2000-08-23 2002-03-15 Sony Corp パターン検査装置及びこれを用いた露光装置制御システム
CN1141620C (zh) * 2001-07-26 2004-03-10 清华大学 用于集成电路光刻系统中的线阵光源扫描装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5631721A (en) 1995-05-24 1997-05-20 Svg Lithography Systems, Inc. Hybrid illumination system for use in photolithography
US6573975B2 (en) 2001-04-04 2003-06-03 Pradeep K. Govil DUV scanner linewidth control by mask error factor compensation

Also Published As

Publication number Publication date
US20030197846A1 (en) 2003-10-23
CN1307485C (zh) 2007-03-28
KR20040002504A (ko) 2004-01-07
JP2003318106A (ja) 2003-11-07
US6784976B2 (en) 2004-08-31
EP1357431A2 (fr) 2003-10-29
TW200307983A (en) 2003-12-16
CN1453643A (zh) 2003-11-05
EP1357431A3 (fr) 2008-10-01
TWI299880B (en) 2008-08-11
SG116490A1 (en) 2005-11-28

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