SG116490A1 - System and method for improving line width controlin a lithography device using an illumination system having pre-numerical aperture control. - Google Patents
System and method for improving line width controlin a lithography device using an illumination system having pre-numerical aperture control.Info
- Publication number
- SG116490A1 SG116490A1 SG200302351A SG200302351A SG116490A1 SG 116490 A1 SG116490 A1 SG 116490A1 SG 200302351 A SG200302351 A SG 200302351A SG 200302351 A SG200302351 A SG 200302351A SG 116490 A1 SG116490 A1 SG 116490A1
- Authority
- SG
- Singapore
- Prior art keywords
- controlin
- line width
- numerical aperture
- aperture control
- lithography device
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/127,506 US6784976B2 (en) | 2002-04-23 | 2002-04-23 | System and method for improving line width control in a lithography device using an illumination system having pre-numerical aperture control |
Publications (1)
Publication Number | Publication Date |
---|---|
SG116490A1 true SG116490A1 (en) | 2005-11-28 |
Family
ID=28790942
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200302351A SG116490A1 (en) | 2002-04-23 | 2003-04-23 | System and method for improving line width controlin a lithography device using an illumination system having pre-numerical aperture control. |
Country Status (7)
Country | Link |
---|---|
US (1) | US6784976B2 (fr) |
EP (1) | EP1357431A3 (fr) |
JP (1) | JP2003318106A (fr) |
KR (1) | KR100773995B1 (fr) |
CN (1) | CN1307485C (fr) |
SG (1) | SG116490A1 (fr) |
TW (1) | TWI299880B (fr) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6888615B2 (en) * | 2002-04-23 | 2005-05-03 | Asml Holding N.V. | System and method for improving linewidth control in a lithography device by varying the angular distribution of light in an illuminator as a function of field position |
US6842223B2 (en) | 2003-04-11 | 2005-01-11 | Nikon Precision Inc. | Enhanced illuminator for use in photolithographic systems |
EP1517183A1 (fr) * | 2003-08-29 | 2005-03-23 | ASML Netherlands B.V. | Appareil lithographique, procédé pour la production d'un dispositif et dispositif produit par ce procédé |
KR101134174B1 (ko) * | 2005-03-15 | 2012-04-09 | 칼 짜이스 에스엠티 게엠베하 | 투사 노광 방법 및 이를 위한 투사 노광 시스템 |
US7934172B2 (en) | 2005-08-08 | 2011-04-26 | Micronic Laser Systems Ab | SLM lithography: printing to below K1=.30 without previous OPC processing |
US20090213354A1 (en) * | 2005-08-08 | 2009-08-27 | Micronic Laser Systems Ab | Method and apparatus for projection printing |
KR100712997B1 (ko) * | 2005-09-30 | 2007-05-02 | 주식회사 하이닉스반도체 | 수직 및 수평 임계치수 차이를 조절하기 위한 노광시스템및 이를 이용한 노광방법 |
US7948606B2 (en) * | 2006-04-13 | 2011-05-24 | Asml Netherlands B.V. | Moving beam with respect to diffractive optics in order to reduce interference patterns |
JP5850267B2 (ja) * | 2010-08-30 | 2016-02-03 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光装置の照明系 |
JP6016169B2 (ja) | 2011-01-29 | 2016-10-26 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光装置の照明系 |
KR101658985B1 (ko) | 2015-01-30 | 2016-09-23 | 한국기계연구원 | 리소그래피용 광학계 장치 |
JP2018519535A (ja) * | 2015-05-21 | 2018-07-19 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影装置を作動させる方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19606170A1 (de) * | 1995-02-20 | 1996-08-22 | Sharp Kk | Lichtquellenfilter sowie Vorrrichtung und Verfahren zur Projektionsbelichtung unter Verwendung desselben |
WO2000057459A1 (fr) * | 1999-03-24 | 2000-09-28 | Nikon Corporation | Méthode d'exposition et dispositif correspondant |
JP2001267205A (ja) * | 2000-03-15 | 2001-09-28 | Nec Corp | 露光装置 |
US20020014600A1 (en) * | 2000-07-26 | 2002-02-07 | Kabushiki Kaisha Toshiba | Scanning exposure method |
EP1248151A2 (fr) * | 2001-04-04 | 2002-10-09 | Svg Lithography Systems, Inc. | Réglage de largeur de trait par compensation des erreurs du masque d'un dispositif d'exposition aux uv profonds par balayage |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6461716A (en) * | 1987-08-31 | 1989-03-08 | Canon Kk | Illuminator |
JPH05217855A (ja) * | 1992-02-01 | 1993-08-27 | Nikon Corp | 露光用照明装置 |
US5329336A (en) * | 1992-07-06 | 1994-07-12 | Nikon Corporation | Exposure method and apparatus |
JP2917704B2 (ja) * | 1992-10-01 | 1999-07-12 | 日本電気株式会社 | 露光装置 |
US5383000A (en) * | 1992-11-24 | 1995-01-17 | General Signal Corporation | Partial coherence varier for microlithographic system |
US5598250A (en) * | 1994-03-07 | 1997-01-28 | Hyundai Electronics Industries Co., Ltd. | Prefabricated modified illumination apparatus for forming fine patterns in a semiconductor device |
US5724122A (en) * | 1995-05-24 | 1998-03-03 | Svg Lithography Systems, Inc. | Illumination system having spatially separate vertical and horizontal image planes for use in photolithography |
US5631721A (en) * | 1995-05-24 | 1997-05-20 | Svg Lithography Systems, Inc. | Hybrid illumination system for use in photolithography |
US6259513B1 (en) * | 1996-11-25 | 2001-07-10 | Svg Lithography Systems, Inc. | Illumination system with spatially controllable partial coherence |
US6628370B1 (en) * | 1996-11-25 | 2003-09-30 | Mccullough Andrew W. | Illumination system with spatially controllable partial coherence compensating for line width variances in a photolithographic system |
US5896188A (en) * | 1996-11-25 | 1999-04-20 | Svg Lithography Systems, Inc. | Reduction of pattern noise in scanning lithographic system illuminators |
US6013401A (en) * | 1997-03-31 | 2000-01-11 | Svg Lithography Systems, Inc. | Method of controlling illumination field to reduce line width variation |
US5966202A (en) * | 1997-03-31 | 1999-10-12 | Svg Lithography Systems, Inc. | Adjustable slit |
DE69931690T2 (de) * | 1998-04-08 | 2007-06-14 | Asml Netherlands B.V. | Lithographischer Apparat |
EP0949541B1 (fr) * | 1998-04-08 | 2006-06-07 | ASML Netherlands B.V. | Appareil lithographique |
JP4545874B2 (ja) * | 2000-04-03 | 2010-09-15 | キヤノン株式会社 | 照明光学系、および該照明光学系を備えた露光装置と該露光装置によるデバイスの製造方法 |
JP2002075815A (ja) * | 2000-08-23 | 2002-03-15 | Sony Corp | パターン検査装置及びこれを用いた露光装置制御システム |
CN1141620C (zh) * | 2001-07-26 | 2004-03-10 | 清华大学 | 用于集成电路光刻系统中的线阵光源扫描装置 |
-
2002
- 2002-04-23 US US10/127,506 patent/US6784976B2/en not_active Expired - Lifetime
-
2003
- 2003-04-17 TW TW092108965A patent/TWI299880B/zh not_active IP Right Cessation
- 2003-04-23 KR KR1020030025724A patent/KR100773995B1/ko active IP Right Grant
- 2003-04-23 CN CNB031222366A patent/CN1307485C/zh not_active Expired - Lifetime
- 2003-04-23 SG SG200302351A patent/SG116490A1/en unknown
- 2003-04-23 EP EP03008808A patent/EP1357431A3/fr not_active Withdrawn
- 2003-04-23 JP JP2003118993A patent/JP2003318106A/ja active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19606170A1 (de) * | 1995-02-20 | 1996-08-22 | Sharp Kk | Lichtquellenfilter sowie Vorrrichtung und Verfahren zur Projektionsbelichtung unter Verwendung desselben |
WO2000057459A1 (fr) * | 1999-03-24 | 2000-09-28 | Nikon Corporation | Méthode d'exposition et dispositif correspondant |
JP2001267205A (ja) * | 2000-03-15 | 2001-09-28 | Nec Corp | 露光装置 |
US20020014600A1 (en) * | 2000-07-26 | 2002-02-07 | Kabushiki Kaisha Toshiba | Scanning exposure method |
EP1248151A2 (fr) * | 2001-04-04 | 2002-10-09 | Svg Lithography Systems, Inc. | Réglage de largeur de trait par compensation des erreurs du masque d'un dispositif d'exposition aux uv profonds par balayage |
Also Published As
Publication number | Publication date |
---|---|
CN1307485C (zh) | 2007-03-28 |
EP1357431A2 (fr) | 2003-10-29 |
TW200307983A (en) | 2003-12-16 |
EP1357431A3 (fr) | 2008-10-01 |
KR100773995B1 (ko) | 2007-11-08 |
US6784976B2 (en) | 2004-08-31 |
TWI299880B (en) | 2008-08-11 |
CN1453643A (zh) | 2003-11-05 |
KR20040002504A (ko) | 2004-01-07 |
JP2003318106A (ja) | 2003-11-07 |
US20030197846A1 (en) | 2003-10-23 |
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