SG116490A1 - System and method for improving line width controlin a lithography device using an illumination system having pre-numerical aperture control. - Google Patents

System and method for improving line width controlin a lithography device using an illumination system having pre-numerical aperture control.

Info

Publication number
SG116490A1
SG116490A1 SG200302351A SG200302351A SG116490A1 SG 116490 A1 SG116490 A1 SG 116490A1 SG 200302351 A SG200302351 A SG 200302351A SG 200302351 A SG200302351 A SG 200302351A SG 116490 A1 SG116490 A1 SG 116490A1
Authority
SG
Singapore
Prior art keywords
controlin
line width
numerical aperture
aperture control
lithography device
Prior art date
Application number
SG200302351A
Other languages
English (en)
Original Assignee
Asml Us Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Us Inc filed Critical Asml Us Inc
Publication of SG116490A1 publication Critical patent/SG116490A1/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70091Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70141Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70625Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG200302351A 2002-04-23 2003-04-23 System and method for improving line width controlin a lithography device using an illumination system having pre-numerical aperture control. SG116490A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/127,506 US6784976B2 (en) 2002-04-23 2002-04-23 System and method for improving line width control in a lithography device using an illumination system having pre-numerical aperture control

Publications (1)

Publication Number Publication Date
SG116490A1 true SG116490A1 (en) 2005-11-28

Family

ID=28790942

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200302351A SG116490A1 (en) 2002-04-23 2003-04-23 System and method for improving line width controlin a lithography device using an illumination system having pre-numerical aperture control.

Country Status (7)

Country Link
US (1) US6784976B2 (fr)
EP (1) EP1357431A3 (fr)
JP (1) JP2003318106A (fr)
KR (1) KR100773995B1 (fr)
CN (1) CN1307485C (fr)
SG (1) SG116490A1 (fr)
TW (1) TWI299880B (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6888615B2 (en) * 2002-04-23 2005-05-03 Asml Holding N.V. System and method for improving linewidth control in a lithography device by varying the angular distribution of light in an illuminator as a function of field position
US6842223B2 (en) 2003-04-11 2005-01-11 Nikon Precision Inc. Enhanced illuminator for use in photolithographic systems
EP1517183A1 (fr) * 2003-08-29 2005-03-23 ASML Netherlands B.V. Appareil lithographique, procédé pour la production d'un dispositif et dispositif produit par ce procédé
KR101134174B1 (ko) * 2005-03-15 2012-04-09 칼 짜이스 에스엠티 게엠베하 투사 노광 방법 및 이를 위한 투사 노광 시스템
US7934172B2 (en) 2005-08-08 2011-04-26 Micronic Laser Systems Ab SLM lithography: printing to below K1=.30 without previous OPC processing
US20090213354A1 (en) * 2005-08-08 2009-08-27 Micronic Laser Systems Ab Method and apparatus for projection printing
KR100712997B1 (ko) * 2005-09-30 2007-05-02 주식회사 하이닉스반도체 수직 및 수평 임계치수 차이를 조절하기 위한 노광시스템및 이를 이용한 노광방법
US7948606B2 (en) * 2006-04-13 2011-05-24 Asml Netherlands B.V. Moving beam with respect to diffractive optics in order to reduce interference patterns
JP5850267B2 (ja) * 2010-08-30 2016-02-03 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置の照明系
JP6016169B2 (ja) 2011-01-29 2016-10-26 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置の照明系
KR101658985B1 (ko) 2015-01-30 2016-09-23 한국기계연구원 리소그래피용 광학계 장치
JP2018519535A (ja) * 2015-05-21 2018-07-19 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影装置を作動させる方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19606170A1 (de) * 1995-02-20 1996-08-22 Sharp Kk Lichtquellenfilter sowie Vorrrichtung und Verfahren zur Projektionsbelichtung unter Verwendung desselben
WO2000057459A1 (fr) * 1999-03-24 2000-09-28 Nikon Corporation Méthode d'exposition et dispositif correspondant
JP2001267205A (ja) * 2000-03-15 2001-09-28 Nec Corp 露光装置
US20020014600A1 (en) * 2000-07-26 2002-02-07 Kabushiki Kaisha Toshiba Scanning exposure method
EP1248151A2 (fr) * 2001-04-04 2002-10-09 Svg Lithography Systems, Inc. Réglage de largeur de trait par compensation des erreurs du masque d'un dispositif d'exposition aux uv profonds par balayage

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6461716A (en) * 1987-08-31 1989-03-08 Canon Kk Illuminator
JPH05217855A (ja) * 1992-02-01 1993-08-27 Nikon Corp 露光用照明装置
US5329336A (en) * 1992-07-06 1994-07-12 Nikon Corporation Exposure method and apparatus
JP2917704B2 (ja) * 1992-10-01 1999-07-12 日本電気株式会社 露光装置
US5383000A (en) * 1992-11-24 1995-01-17 General Signal Corporation Partial coherence varier for microlithographic system
US5598250A (en) * 1994-03-07 1997-01-28 Hyundai Electronics Industries Co., Ltd. Prefabricated modified illumination apparatus for forming fine patterns in a semiconductor device
US5724122A (en) * 1995-05-24 1998-03-03 Svg Lithography Systems, Inc. Illumination system having spatially separate vertical and horizontal image planes for use in photolithography
US5631721A (en) * 1995-05-24 1997-05-20 Svg Lithography Systems, Inc. Hybrid illumination system for use in photolithography
US6259513B1 (en) * 1996-11-25 2001-07-10 Svg Lithography Systems, Inc. Illumination system with spatially controllable partial coherence
US6628370B1 (en) * 1996-11-25 2003-09-30 Mccullough Andrew W. Illumination system with spatially controllable partial coherence compensating for line width variances in a photolithographic system
US5896188A (en) * 1996-11-25 1999-04-20 Svg Lithography Systems, Inc. Reduction of pattern noise in scanning lithographic system illuminators
US6013401A (en) * 1997-03-31 2000-01-11 Svg Lithography Systems, Inc. Method of controlling illumination field to reduce line width variation
US5966202A (en) * 1997-03-31 1999-10-12 Svg Lithography Systems, Inc. Adjustable slit
DE69931690T2 (de) * 1998-04-08 2007-06-14 Asml Netherlands B.V. Lithographischer Apparat
EP0949541B1 (fr) * 1998-04-08 2006-06-07 ASML Netherlands B.V. Appareil lithographique
JP4545874B2 (ja) * 2000-04-03 2010-09-15 キヤノン株式会社 照明光学系、および該照明光学系を備えた露光装置と該露光装置によるデバイスの製造方法
JP2002075815A (ja) * 2000-08-23 2002-03-15 Sony Corp パターン検査装置及びこれを用いた露光装置制御システム
CN1141620C (zh) * 2001-07-26 2004-03-10 清华大学 用于集成电路光刻系统中的线阵光源扫描装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19606170A1 (de) * 1995-02-20 1996-08-22 Sharp Kk Lichtquellenfilter sowie Vorrrichtung und Verfahren zur Projektionsbelichtung unter Verwendung desselben
WO2000057459A1 (fr) * 1999-03-24 2000-09-28 Nikon Corporation Méthode d'exposition et dispositif correspondant
JP2001267205A (ja) * 2000-03-15 2001-09-28 Nec Corp 露光装置
US20020014600A1 (en) * 2000-07-26 2002-02-07 Kabushiki Kaisha Toshiba Scanning exposure method
EP1248151A2 (fr) * 2001-04-04 2002-10-09 Svg Lithography Systems, Inc. Réglage de largeur de trait par compensation des erreurs du masque d'un dispositif d'exposition aux uv profonds par balayage

Also Published As

Publication number Publication date
CN1307485C (zh) 2007-03-28
EP1357431A2 (fr) 2003-10-29
TW200307983A (en) 2003-12-16
EP1357431A3 (fr) 2008-10-01
KR100773995B1 (ko) 2007-11-08
US6784976B2 (en) 2004-08-31
TWI299880B (en) 2008-08-11
CN1453643A (zh) 2003-11-05
KR20040002504A (ko) 2004-01-07
JP2003318106A (ja) 2003-11-07
US20030197846A1 (en) 2003-10-23

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