KR100769134B1 - 반도체 장치의 게이트 유전막 형성 방법 - Google Patents
반도체 장치의 게이트 유전막 형성 방법 Download PDFInfo
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- KR100769134B1 KR100769134B1 KR1020050070990A KR20050070990A KR100769134B1 KR 100769134 B1 KR100769134 B1 KR 100769134B1 KR 1020050070990 A KR1020050070990 A KR 1020050070990A KR 20050070990 A KR20050070990 A KR 20050070990A KR 100769134 B1 KR100769134 B1 KR 100769134B1
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- transition metal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising transition metals
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (7)
- 반도체 기판에 제1 절연막을 형성하는 단계;상기 반도체 기판이 저전압, 중간전압, 및 고전압 영역으로 구분하여 형성되도록 포토레지스트 패턴을 형성하는 단계;상기 포토레지스트 패턴을 이용하여 상기 반도체 기판의 소정 영역이 노출되도록 상기 제1 절연막의 일부분을 제거하는 단계;상기 노출된 기판 및 제 1 절연막 상에 전이금속층을 형성하는 단계;상기 전이금속층을 재산화하여 전이금속계 산화막을 형성하는 단계; 및포밍가스를 이용하여 상기 전이금속계 산화막 상에 질화막을 형성하는 단계를 포함하는 게이트 유전막 형성 방법.
- 제1항에서,상기 전이금속층은 스퍼터링 방법을 이용하여 증착하는 것을 특징으로 하는 게이트 유전막 형성 방법.
- 제1항에서,상기 노출된 반도체 기판에 제 2 절연막을 형성하는 단계;상기 반도체 기판의 소정 영역이 노출되도록 상기 제 2 절연막을 제거하는 단계를 더 포함하되,상기 전이금속막은 상기 노출된 반도체 기판, 상기 제 1 절연막 및 상기 제 2 절연막 상에 형성되는 것을 특징으로 하는 게이트 유전막 형성 방법.
- 제1항에서,상기 질화막은 300℃ 내지 500℃에서 형성하는 것을 특징으로 하는 게이트 유전막 형성 방법.
- 제3항에서,상기 제 1 절연막 및 제 2 절연막은 반도체 기판을 열산화하여 형성하는 것을 특징으로 하는 게이트 유전막 형성 방법.
- 제1항에서,상기 제 1 절연막은 반도체 기판을 열산화하여 형성하는 것을 특징으로 하는 게이트 유전막 형성 방법.
- 제1항에서,상기 전이금속계 산화막을 형성하는 단계에서,급속열산화 방법을 이용하여 상기 전이금속을 재산화하는 것을 특징으로 하는 게이트 유전막 형성 방법.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020050070990A KR100769134B1 (ko) | 2005-08-03 | 2005-08-03 | 반도체 장치의 게이트 유전막 형성 방법 |
US11/498,431 US7550346B2 (en) | 2005-08-03 | 2006-08-02 | Method for forming a gate dielectric of a semiconductor device |
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KR1020050070990A KR100769134B1 (ko) | 2005-08-03 | 2005-08-03 | 반도체 장치의 게이트 유전막 형성 방법 |
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KR20070016375A KR20070016375A (ko) | 2007-02-08 |
KR100769134B1 true KR100769134B1 (ko) | 2007-10-22 |
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KR1020050070990A KR100769134B1 (ko) | 2005-08-03 | 2005-08-03 | 반도체 장치의 게이트 유전막 형성 방법 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20040059729A (ko) * | 2002-12-28 | 2004-07-06 | 주식회사 하이닉스반도체 | 반도체 소자의 트리플 게이트 산화막 형성 방법 |
KR20050014157A (ko) * | 2003-07-30 | 2005-02-07 | 주식회사 하이닉스반도체 | 반도체소자의 제조방법 |
KR20050019304A (ko) * | 2003-08-18 | 2005-03-03 | 동부전자 주식회사 | 반도체 소자의 캐패시터 및 그 제조 방법 |
KR100473735B1 (ko) | 2002-10-14 | 2005-03-10 | 매그나칩 반도체 유한회사 | 반도체 소자의 제조 방법 |
KR20050069405A (ko) * | 2003-12-31 | 2005-07-05 | 동부아남반도체 주식회사 | 게이트 산화막 형성방법 |
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2005
- 2005-08-03 KR KR1020050070990A patent/KR100769134B1/ko active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100473735B1 (ko) | 2002-10-14 | 2005-03-10 | 매그나칩 반도체 유한회사 | 반도체 소자의 제조 방법 |
KR20040059729A (ko) * | 2002-12-28 | 2004-07-06 | 주식회사 하이닉스반도체 | 반도체 소자의 트리플 게이트 산화막 형성 방법 |
KR20050014157A (ko) * | 2003-07-30 | 2005-02-07 | 주식회사 하이닉스반도체 | 반도체소자의 제조방법 |
KR20050019304A (ko) * | 2003-08-18 | 2005-03-03 | 동부전자 주식회사 | 반도체 소자의 캐패시터 및 그 제조 방법 |
KR20050069405A (ko) * | 2003-12-31 | 2005-07-05 | 동부아남반도체 주식회사 | 게이트 산화막 형성방법 |
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