KR100740936B1 - a thin film transistor array panel and a manufacturing method thereof - Google Patents

Abstract

The gate insulating film is formed on the gate wiring, and the semiconductor layer and the data wiring are formed on the gate insulating film. On the data line, an organic protective film having a quasi-contacting hole having a thickness thinner than that of the contact hole exposing the gate pad, the data pad, and the drain electrode is formed. At this time, the quasi-contacting hole is formed in the part which should irradiate a laser for repair. That is, the quasi-contact hole is located at the portion where the repair line and the gate line intersect or at the portion where the pixel electrode and the gate line overlap. This facilitates repair through laser irradiation, and also facilitates confirmation of repair success.

LCD, thin film transistor substrate, repair, organic insulating film

Description

A thin film transistor array panel and a manufacturing method

1 is a layout view of a thin film transistor substrate according to an embodiment of the present invention,

2A and 2B are cross-sectional views taken along lines IIa-IIa 'and IIb-IIb' of FIG. 1, respectively.

3A, 4A, 5A, and 6A are layout views of a thin film transistor substrate illustrating an intermediate process of manufacturing a thin film transistor substrate according to an exemplary embodiment of the present invention, according to a process sequence thereof.

3B and 3C are cross-sectional views taken along lines IIIb-IIIb 'and IIIc-IIIc' of FIG. 3A, respectively.

4B and 4C are cross-sectional views taken along lines IVb-IVb 'and IVc-IVc' of FIG. 4A, respectively.

5B and 5C are cross-sectional views taken along lines Vb-Vb 'and Vc-Vc' of FIG. 5A, respectively.

6B and 6C are cross-sectional views taken along lines VIb-VIb 'and VIc-VIc' of FIG. 6A, respectively.

7A and 7B are cross-sectional views illustrating an exposure process for obtaining the cross-sectional structures of FIGS. 6B and 6C, respectively.

TECHNICAL FIELD The present invention relates to a thin film transistor substrate and a method of manufacturing the same, and more particularly, to a thin film transistor substrate using an organic protective film and a method of manufacturing the same.

The thin film transistor substrate is used as a circuit board for independently driving each pixel in a liquid crystal display device, an organic EL (electro luminescence) display device, or the like. The thin film transistor substrate includes a scan signal line or a gate line for transmitting a scan signal and an image signal line or data line for transmitting an image signal, a thin film transistor connected to the gate line and a data line, and a pixel connected to the thin film transistor. And an electrode, a gate insulating film covering and insulating the gate wiring, and a thin film transistor and a protective film covering and insulating the data wiring. The thin film transistor includes a semiconductor layer forming a gate electrode and a channel, which are part of a gate wiring, a source electrode and a drain electrode, which are part of a data wiring, a gate insulating film, a protective film, and the like. The thin film transistor is a switching device that transfers or blocks an image signal transmitted through a data line to a pixel electrode according to a scan signal transmitted through a gate line.

In the thin film transistor substrate, since each wiring and the thin film transistor must be formed in each pixel unit, they are formed to have a very fine size of micrometer or less. Therefore, in the manufacturing process of the thin film transistor substrate, there is a possibility that a defect occurs due to disconnection of the wiring or short circuit between the wirings. For this reason, a repair structure, such as a repair ring, is formed on the thin film transistor substrate as a means for repairing a defect, and when a failure occurs, the repair is performed by cutting the wiring using a laser or connecting the repair structure and the wiring.

On the other hand, a structure in which an organic insulating film is used instead of an inorganic insulating film such as a nitride film as a protective film has been proposed. Since the organic protective film has a low dielectric constant and a thickness of about 1.5 to 3 μm, interference between the data wiring and the pixel electrode may use an inorganic protective film. Significantly reduced compared to Accordingly, it is possible to overlap the pixel electrode with the data wiring, thereby maximizing the aperture ratio. However, when the thick organic protective film is applied, it is difficult to repair the defect using the laser. In particular, the problem is large when the pixel electrode is shorted with the gate wiring in order to convert the poor pixel defect into the dark pixel defect. This is because a thick organic protective film interferes with the energy transfer of the laser. In addition, it can be confirmed that the repair was successful through the liquid crystal splashes while the protective film is penetrated. The organic protective film is so thick that it is difficult to check whether the repair is successful.

The technical problem to be achieved by the present invention is to facilitate the repair of defects of the thin film transistor substrate using the organic protective film.

In order to solve this problem, in the present invention, the thickness of the organic protective film of the portion to be irradiated with the laser is formed thinner than other portions.

Specifically, an insulating substrate, the first wiring formed on the insulating substrate,

An insulating film formed on the first wiring, a second wiring formed on the insulating film and insulated from and intersecting the first wiring, a thin film transistor connected to the first wiring and the second wiring, and the second wiring An organic protective film formed on the wiring, the organic protective film having a quasi-contacting hole having a thickness thinner than that of the contact hole exposing any one of the first wiring, the second wiring, and the thin film transistor; A thin film transistor substrate including a pixel electrode connected to the thin film transistor through a contact hole is prepared.

At this time, the second wiring is formed on the same layer, and further includes a repair line that intersects with the first wiring, the quasi-contact hole of the organic protective film is located at the portion where the first wiring and the repair line intersect. The pixel electrode may be at least partially overlapped with the first wiring, the quasi-contact hole of the passivation layer may be positioned at a portion where the pixel electrode and the first wiring overlap, and the organic passivation layer is formed of a photosensitive material. Is preferably.

The thin film transistor substrate may include forming a gate wiring, sequentially stacking a gate insulating film, a first semiconductor layer, and a second semiconductor layer, and patterning the first and second semiconductor layers to form island-shaped first and second layers. Forming a semiconductor layer pattern, forming a data line, etching the second semiconductor layer pattern to form a contact pattern, and having a thickness greater than that of the contact hole exposing the gate line and the data line. It is manufactured through a method comprising the step of forming an organic protective film having a thin quasi-contact hole, and forming a pixel electrode.

In this case, the forming of the organic passivation layer may include applying a photosensitive organic film, exposing the photosensitive organic film through a mask having a slit pattern, and developing the exposed photosensitive organic film.

Next, a thin film transistor substrate according to an exemplary embodiment of the present invention will be described with reference to the drawings.

1 is a layout view of a thin film transistor substrate according to an exemplary embodiment of the present invention, and FIGS. 2A and 2B are cross-sectional views taken along lines IIa-IIa 'and IIb-IIb' of FIG. 1, respectively.

The first gate wiring layers 221, 241, and 261 made of a material having excellent physicochemical properties such as chromium (Cr) on the insulating substrate 10 and the second gate wiring layer 222 made of a material having a low specific resistance such as aluminum (Al). Gate wirings formed of a double layer of 242 and 262 are formed.

The gate wire is connected to the gate line 22 and the gate line 22 extending in the horizontal direction, and are connected to the gate pad 24 and the gate line 22 which receive a gate signal from the outside and transmit the gate signal to the gate line. A gate electrode 26 of the thin film transistor.

A gate insulating film 30 made of silicon nitride (SiN _x ) is formed on the gate lines 22, 24, and 26.

A semiconductor layer 40 made of a semiconductor such as amorphous silicon is formed on the gate insulating layer 30 on the gate electrode 24, and a silicide or n-type impurity is doped with high concentration on the semiconductor layer 40. Resistive contact layers 55 and 56 made of a material such as n + hydrogenated amorphous silicon are formed, respectively.

On the ohmic contact layers 55 and 56 and the gate insulating layer 30, the first data wiring layers 621, 651, 661 and 681 made of chromium and the like and the second data wiring layers 622, 652, 662 and 682 made of aluminum and the like. The data wirings 62, 65, 66, and 68 formed of double layers of are formed. The data wires 62, 65, 66, and 68 are formed in a vertical direction and intersect the gate line 22 to define a pixel, which is a branch of the data line 62 and the data line 62. It is connected to one end of the source electrode 65 and the data line 62 extending to the upper portion, and separated from the data pad 68 and the source electrode 65 to which an image signal from the outside is applied, and the gate electrode 26. And a drain electrode 66 formed over the ohmic contact layer 56 opposite the source electrode 65.

On the gate insulating film 30, a repair line 69 formed of a double layer of the first repair line layer 691 and the second repair line layer 692 intersects the gate line 22. The repair line 69 is formed of the same material as the data line outside the display area where the gate line 22 and the data line 62 cross each other.

On the data line, an organic protective film 70 made of an acrylic series, for example, PC-407, PC-403, or the like is formed. In the organic passivation layer 70, contact holes 74, 76, and 78 that expose the gate pad 24, the drain electrode 66, and the data pad 68 are formed. In addition, a portion of the organic passivation layer 70 is removed from the intersection of the repair line 69 and the gate line 22 and the overlapping portion of the gate line 22 and the pixel electrode 82 to form a groove to form a groove. Contact holes 75 and 77 are formed. The quasi-contact holes 75 and 77 are for facilitating repair of defects using a laser.

The pixel electrode 82 electrically connected to the drain electrode 66 is formed on the organic passivation layer 70 through the contact hole 76. In addition, an auxiliary gate pad 86 and an auxiliary data pad 88 connected to the gate pad 24 and the data pad 68 are formed on the organic passivation layer 70 through the contact holes 74 and 78, respectively. have. Here, the pixel electrode 82, the auxiliary gate pad 86, and the auxiliary data pad 88 are made of ITO or IZO. In this case, as shown in FIGS. 1 and 2, the pixel electrode 82 overlaps the gate line 22 to form a storage capacitor, and when the storage capacitor is insufficient, the same layer as the gate wirings 22, 24, and 26. The storage capacitor wiring may be added to the In addition, when the pixel electrode 82 becomes defective due to a short circuit between the data line 62 and the like, the pixel electrode 82 and the gate line 22 are short-circuited through the second quasi-contact hole 77. Switch to dark pixel failure.

If the thin film transistor substrate is manufactured with the above structure, it can be easily repaired by irradiating a laser through the quasi-contact holes 75 and 77 in the event that a defect occurs in the wiring. The thin organic passivation layer 70 may be easily penetrated to check whether the repair is successful.

Next, a method of manufacturing the thin film transistor substrate according to the exemplary embodiment of the present invention will be described in detail with reference to FIGS. 1, 2A, 2B, and 3A to 7B.

3A, 4A, 5A, and 6A are layout views of a thin film transistor substrate illustrating an intermediate process of manufacturing a thin film transistor substrate according to an embodiment of the present invention, in the order of the processes thereof, and FIGS. 3B and 3C are respectively shown in FIG. Sections IIIb-IIIb 'and IIIc-IIIc' are cross-sectional views, and FIGS. 4B and 4C are cross-sectional views taken along lines IVb-IVb 'and IVc-IVc' of FIG. 4A, respectively, and FIGS. 5B and 5C are respectively taken from FIG. 6B and 6C are cross-sectional views taken along the lines VIb-VIb 'and VIc-VIc' shown in FIG. 6A, and FIGS. 7A and 7B are taken in FIGS. 6B and 6B, respectively. It is sectional drawing which shows the exposure process for obtaining the cross-sectional structure of FIG. 6C.

First, as shown in FIGS. 3A and 3C, the first gate wiring layers 221, 241, and 261 made of a physicochemically stable conductive material such as chromium and the like are formed on the substrate 10. A gate line 22 extending in the horizontal direction by sequentially stacking and patterning two gate wiring layers 222, 242, and 262, a gate electrode 26 that is part of the gate line 22, and a second gate pad 24. A gate wiring is formed.

Next, as shown in FIGS. 4A and 4C, three-layer films of the gate insulating film 30 made of silicon nitride, the semiconductor layer 40 made of amorphous silicon, and the doped amorphous silicon layer 50 are successively laminated and photographic etched. As a result, the semiconductor layer 40 and the doped amorphous silicon layer 50 are patterned to form an island-like semiconductor layer 40 and an ohmic contact layer 50 on the gate insulating layer 30 on the gate electrode 24.

Next, as shown in FIGS. 5A to 5B, the first data wiring layers 651, 661, 681, and the first repair line layer 691 made of a physicochemically stable conductive material such as chromium and a low resistance conductive material such as aluminum are illustrated. The second data line layers 652, 662, and 682 and the second repair line layer 692 made of a material are successively stacked and patterned by a photolithography process using a mask to intersect the gate line 22. A source electrode 65 connected to the data line 62 and extending to an upper portion of the gate electrode 26, and separated from the data pad 68 and the source electrode 64 connected to one end of the data line 62. The data line and the repair line 69 including the drain electrode 66 facing the source electrode 65 are formed around the gate electrode 26.

Next, as shown in FIGS. 6A and 6C, an acrylic photosensitive organic film is coated on the data line, exposed through a mask, and developed to have contact holes 74, 76, 78 and quasi-contact holes 75, 77. An organic protective film 70 is formed.

A process of exposing the photosensitive organic film will be described in detail with reference to FIGS. 7A and 7B.

As shown in Figs. 7A and 7B, a mask having an A portion, a transparent B portion, a C portion having a slit, and a D portion which does not transmit light is aligned on the thin film transistor substrate coated with an organic film. That is, part B is a part where contact holes 74, 76, and 78 are to be formed, part C is a part where second quasi-contact hole 77 is to be formed, and part D is a part where first quasi-contact hole 75 is to be formed. , A part is aligned and exposed to the mask so that the other protective film 70 is located in the part where it should remain. Then, the entire portion of the organic passivation layer 70 is exposed to the portion where the contact holes 74, 76, and 78 are to be formed, and only a portion of the organic passivation layer 70 is exposed to the portion where the quasi-contact holes 75 and 77 are to be formed. At this time, the portion where the first quasi-contact hole 75 is to be formed is exposed to a deep portion as compared with the portion where the second quasi-contact hole 77 is to be formed. This is because the spacing of the slits is narrower than that of the C portion. Subsequently, when the organic passivation layer 70 is developed, the photosensitive portion is removed to form the passivation layer 70 having the contact holes 74, 76, 78 and the quasi-contact holes 75, 77.

Next, as shown in FIGS. 1, 2A, and 2B, the gate insulating film 30 exposed through the contact hole 74 is etched to expose the gate pad 24, and then an ITO film or an IZO film is stacked. The gate pad 24 and the data pad 68 are etched through the pixel electrode 82 connected to the drain electrode 66 through the second contact hole 76 and the first and third contact holes 74 and 78. ) And an auxiliary gate pad 86 and an auxiliary data pad 88 respectively connected to each other. At this time, the pixel electrode 82 is formed along the surface of the second quasi-contact hole 77 and has a concave portion.

In the above, the thickness of the organic passivation layer 70 is varied in four steps by using a mask having two kinds of slits with different slit intervals. It is also possible to vary in stages. That is, the portions C and D in FIGS. 7A and 7B may be formed to have the same thickness.

In addition, the thin portion of the organic protective film, referred to as the quasi-contact hole, may be formed in another portion to be irradiated with a laser for repair. For example, when a repair line is formed on the same layer as the gate line to repair a defective data line, a quasi contact hole may be formed at a point where the data line and the repair line cross each other.

In addition, although the photosensitive material is used as the organic passivation layer, a non-photosensitive material may be used as the organic passivation layer. In this case, a photosensitive film is coated on the organic protective film for patterning of the organic protective film, and as shown in FIGS. 7A and 7B, a photosensitive film mask having a thickness of three or more levels is formed by using a mask having a slit. The contact hole and the quasi-contact hole can be formed by etching the organic protective film under the same.

As described above, the thickness of the organic protective film is formed thinner than other portions at the portion to be irradiated with the laser for repair, thereby facilitating repair through laser irradiation, and facilitating confirmation of repair success.

Claims (6)

Insulation board, A first wiring formed on the insulating substrate, An insulating film formed over said first wiring, A second wiring formed on the insulating film and insulated from and intersecting with the first wiring; A thin film transistor connected to the first wiring and the second wiring, An organic protective film formed on the second wiring and having a quasi-contacting hole having a thickness thinner than that of the contact hole exposing any one of the first wiring, the second wiring, and the thin film transistor; A pixel electrode formed on the organic passivation layer and connected to the thin film transistor through the contact hole; Thin film transistor substrate comprising a. In claim 1, A thin film transistor is formed on the same layer as the second wiring line and further includes a repair line crossing the first wiring line, and the quasi-contact hole of the organic protective film is positioned at a portion where the first wiring line and the repair line cross each other. Board. In claim 1, And the pixel electrode is at least partially overlapping the first wiring, and the quasi-contacting hole of the passivation layer is positioned at a portion where the pixel electrode and the first wiring overlap. In claim 1, The organic protective layer is a thin film transistor substrate is a photosensitive material. Forming a gate wiring, Sequentially stacking a gate insulating film, a first semiconductor layer, and a second semiconductor layer, Patterning the first semiconductor layer and the second semiconductor layer to form island-shaped first and second semiconductor layer patterns, Forming a data wiring, Etching the second semiconductor layer pattern to form a contact pattern; Forming an organic passivation layer having a quasi-contacting hole having a thickness thinner than that of the contact hole exposing the gate wiring and the data wiring; Forming a pixel electrode Method of manufacturing a thin film transistor substrate comprising a. Forming the organic protective film Applying a photosensitive organic film, Exposing the photosensitive organic film through a mask having a slit pattern, Developing the exposed photosensitive organic film Method of manufacturing a thin film transistor substrate comprising a.

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