KR100726968B1 - 응력 완화층을 구비한 질화물계 발광소자 및 이의 제조방법 - Google Patents
응력 완화층을 구비한 질화물계 발광소자 및 이의 제조방법 Download PDFInfo
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- KR100726968B1 KR100726968B1 KR1020050113630A KR20050113630A KR100726968B1 KR 100726968 B1 KR100726968 B1 KR 100726968B1 KR 1020050113630 A KR1020050113630 A KR 1020050113630A KR 20050113630 A KR20050113630 A KR 20050113630A KR 100726968 B1 KR100726968 B1 KR 100726968B1
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- Prior art keywords
- nitride
- light emitting
- thin film
- based light
- emitting device
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 239000010409 thin film Substances 0.000 claims abstract description 50
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 48
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000010703 silicon Substances 0.000 claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 45
- 239000013078 crystal Substances 0.000 claims abstract description 17
- 238000000059 patterning Methods 0.000 claims abstract description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 5
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- 125000004429 atom Chemical group 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 11
- 230000003287 optical effect Effects 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 28
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000879 optical micrograph Methods 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- -1 (CH 3 ) 3 Ga Chemical compound 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (10)
- 상부 표면이 패터닝 된 실리콘 기판; 및상기 기판 상부에 적층된 질화물 박막층을 포함하는 응력완화층을 구비한 질화물계 발광소자.
- 제 1항에 있어서, 상기 기판 상부표면의 패터닝 깊이는 1~10,000㎚이고, 패턴 중심간의 거리는 0.1~50,000㎛이며, 패턴의 넓이는 0.1㎛2~500㎜2인 것을 특징으로 하는 응력완화층을 구비한 질화물계 발광소자.
- 제 1항에 있어서, 상기 기판 상부표면의 패터닝 형상은 직선, 원, 사각형, 육각형 중 선택되는 하나의 형상인 것을 특징으로 하는 응력완화층을 구비한 질화물계 발광소자.
- 제 1항에 있어서, 상기 질화물 박막층을 구성하는 질화물은 InxGayAlzN의 조성을 가지는 것을 특징으로 하는 응력완화층을 구비한 질화물계 발광소자.(단, 상기에서 0≤x≤1, 0≤y≤1, 0≤z≤1, x+y+z=1 이다)
- 제 1항에 있어서, 상기 질화물 박막층은 3족 원자를 포함하는 기체와 질소원자를 포함하는 기체를 원료로 하여 형성되는 것을 특징으로 하는 응력완화층을 구 비한 질화물계 발광소자.
- 제 1항에 있어서, 상기 질화물 박막층은 3족 원소와 질소원자가 함께 구조 내 포함된 단일 화합물을 원료로 하여 형성되는 것을 특징으로 하는 응력완화층을 구비한 질화물계 발광소자.
- 실리콘 기판 상부에 패터닝 하는 단계; 및상기 패터닝된 기판 상부에 갈륨 질화물 결정을 성장시키는 단계를 포함하는 응력완화층을 구비한 질화물계 발광소자 제작방법.
- 제 7항에 있어서, 상기 기판 상부에 패터닝 하는 단계는포토레지스트를 코팅하는 단계;노광공정을 통해 포토레지스트 패턴을 형성하는 단계;마스크 포토레지스트가 존재하지 않는 기판 표면 부위를 식각하여 실리콘 기판 표면의 패턴을 형성하는 단계; 및마스크 포토레지스트 층을 제거하는 단계를 포함하는 것을 특징으로 하는 응력완화층을 구비한 질화물계 발광소자 제작방법.
- 제 8항에 있어서, 상기 식각 방법은 건식, 습식, 스크라이빙 중 선택되는 하나의 방법을 이용하는 것을 특징으로 하는 응력완화층을 구비한 질화물계 발광소자 제작방법.
- 제 8항에 있어서, 상기 식각 부위를 스크라이빙 또는 브레이킹 하는 단계를 더 포함하는 것을 특징으로 하는 응력완화층을 구비한 질화물계 발광소자 제작방법.
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