KR100726941B1 - 유기 전계발광 표시장치 및 그 제조방법 - Google Patents
유기 전계발광 표시장치 및 그 제조방법 Download PDFInfo
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- KR100726941B1 KR100726941B1 KR1020050094014A KR20050094014A KR100726941B1 KR 100726941 B1 KR100726941 B1 KR 100726941B1 KR 1020050094014 A KR1020050094014 A KR 1020050094014A KR 20050094014 A KR20050094014 A KR 20050094014A KR 100726941 B1 KR100726941 B1 KR 100726941B1
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- conductive layer
- signal line
- light emitting
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- organic light
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- 238000000034 method Methods 0.000 title claims description 17
- 238000005401 electroluminescence Methods 0.000 title description 39
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 239000011159 matrix material Substances 0.000 claims abstract description 9
- 239000000565 sealant Substances 0.000 claims description 34
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 230000007797 corrosion Effects 0.000 description 9
- 238000005260 corrosion Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 238000005192 partition Methods 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (5)
- 기판 상에 유기발광셀이 매트릭스 형태로 배열된 유기전계발광어레이와;제1 도전층 및 상기 제1 도전층을 덮도록 형성되어 상기 제1 도전층을 외부로부터 밀폐시키는 제2 도전층을 포함하며 상기 유기발광셀에 구동신호를 전달하는 스캔 신호라인 및 데이터 신호라인을 구비하고,상기 스캔 및 데이터 신호라인 중 적어도 어느 하나는적어도 하나의 관통홀을 구비하는 것을 특징으로 하는 유기전계발광표시장치.
- 제 1 항에 있어서,상기 데이터 신호라인을 경유하여 상기 유기발광셀에 데이터 신호를 공급하는 데이터 패드들과;상기 스캔 신호라인을 경유하여 상기 유기발광셀에 스캔 신호를 공급하는 스캔 패드을 더 구비하고,상기 스캔 패드 및 데이터 패드는상기 제1 도전층 및 상기 제1 도전층을 덮도록 형성되어 상기 제1 도전층을 외부로부터 밀폐시키는 제2 도전층을 포함하는 것을 특징으로 하는 유기전계발광표시장치.
- 제 1 항에 있어서,상기 스캔 신호라인 및 데이터 신호라인 중 적어도 어느 하나와 접촉되는 실런트를 통해 상기 기판과 합착되어 상기 유기전계발광어레이를 외부로부터 보호하는 캡을 더 구비하는 것을 특징으로 하는 유기전계발광표시장치.
- 유기발광셀이 매트릭스 형태로 배열된 유기전계발광어레이에 구동신호를 전달하는 스캔 신호라인 및 데이터 신호라인을 형성하는 단계를 포함하는 유기전계발광표시장치의 제조방법에 있어서,상기 스캔 신호라인 및 데이터 신호라인 중 적어도 어느 하나를 형성하는 단계는기판 상에 그의 중심을 관통하는 제1 관통홀을 가지는 제1 도전층을 형성하는 단계와;상기 제1 도전층을 덮도록 위치하여 외부로부터 제1 도전층을 밀폐시킴과 아울러 상기 제1 관통홀과 중첩되는 제2 관통홀을 가지는 제2 도전층을 형성하는 단계를 포함하는 것을 특징으로 하는 유기전계발광표시장치의 제조방법.
- 제 4 항에 있어서,실런트를 이용하여 상기 유기전계발광어레이를 패키징하기 위한 캡과 기판을 합착하는 단계와;광을 이용하여 상기 실런트를 경화하는 단계를 포함하고,상기 실런트를 경화하는 단계는상기 광의 일부가 상기 제1 및 제2 관통홀을 경유하여 상기 실런트에 조사되는 단계를 포함하는 것을 특징으로 하는 유기전계발광표시장치의 제조방법.
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