KR100709832B1 - 조립체 내의 차별적인 열 팽창으로 인해 발생되는 계면 응력을 감소시키는 장치 및 방법 - Google Patents

조립체 내의 차별적인 열 팽창으로 인해 발생되는 계면 응력을 감소시키는 장치 및 방법 Download PDF

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Publication number
KR100709832B1
KR100709832B1 KR1020000045190A KR20000045190A KR100709832B1 KR 100709832 B1 KR100709832 B1 KR 100709832B1 KR 1020000045190 A KR1020000045190 A KR 1020000045190A KR 20000045190 A KR20000045190 A KR 20000045190A KR 100709832 B1 KR100709832 B1 KR 100709832B1
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KR
South Korea
Prior art keywords
substrate
thermal expansion
board
temperature
interfacial stress
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Expired - Fee Related
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KR1020000045190A
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English (en)
Korean (ko)
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KR20010021214A (ko
Inventor
다크셔왈터제이
엔젤페드로에프
Original Assignee
아바고 테크놀로지스 제너럴 아이피 (싱가포르) 피티이 리미티드
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Publication of KR20010021214A publication Critical patent/KR20010021214A/ko
Application granted granted Critical
Publication of KR100709832B1 publication Critical patent/KR100709832B1/ko
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
    • H10W42/121Arrangements for protection of devices protecting against mechanical damage
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/10Arrangements for heating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • H10W72/07251Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Wire Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
KR1020000045190A 1999-08-06 2000-08-04 조립체 내의 차별적인 열 팽창으로 인해 발생되는 계면 응력을 감소시키는 장치 및 방법 Expired - Fee Related KR100709832B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US9/369,898 1999-08-06
US09/369,898 US6320754B1 (en) 1999-08-06 1999-08-06 Apparatus for the reduction of interfacial stress caused by differential thermal expansion in an integrated circuit package
US09/369,898 1999-08-06

Publications (2)

Publication Number Publication Date
KR20010021214A KR20010021214A (ko) 2001-03-15
KR100709832B1 true KR100709832B1 (ko) 2007-04-23

Family

ID=23457388

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000045190A Expired - Fee Related KR100709832B1 (ko) 1999-08-06 2000-08-04 조립체 내의 차별적인 열 팽창으로 인해 발생되는 계면 응력을 감소시키는 장치 및 방법

Country Status (6)

Country Link
US (1) US6320754B1 (https=)
JP (1) JP2001085819A (https=)
KR (1) KR100709832B1 (https=)
DE (1) DE10034309B4 (https=)
GB (1) GB2356084B (https=)
TW (1) TW497233B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7235886B1 (en) * 2001-12-21 2007-06-26 Intel Corporation Chip-join process to reduce elongation mismatch between the adherents and semiconductor package made thereby
US20030116860A1 (en) * 2001-12-21 2003-06-26 Biju Chandran Semiconductor package with low resistance package-to-die interconnect scheme for reduced die stresses
US20040240188A1 (en) * 2003-05-28 2004-12-02 Cromwell Stephen Daniel Protective coating for attach hardware for circuits
DE10340866A1 (de) * 2003-09-04 2005-03-31 Siemens Ag Verfahren zum Befestigen einer Elementgruppe an einer Trägerschicht
US20120081872A1 (en) * 2010-09-30 2012-04-05 Alcatel-Lucent Canada Inc. Thermal warp compensation ic package
DE102018104521B4 (de) * 2018-02-28 2022-11-17 Rogers Germany Gmbh Metall-Keramik-Substrate
CN108550559B (zh) * 2018-05-28 2024-07-30 北京比特大陆科技有限公司 散热片、芯片组件及电路板

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55107247A (en) * 1979-02-09 1980-08-16 Matsushita Electric Ind Co Ltd Hybrid integrated circuit
JPS58138050A (ja) * 1982-02-10 1983-08-16 Sumitomo Electric Ind Ltd 半導体装置の製造方法
US5877070A (en) * 1997-05-31 1999-03-02 Max-Planck Society Method for the transfer of thin layers of monocrystalline material to a desirable substrate

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4437718A (en) * 1981-12-17 1984-03-20 Motorola Inc. Non-hermetically sealed stackable chip carrier package
EP0452752B1 (en) 1990-04-16 1996-12-18 Fujitsu Limited Chip carrier for enabling production of high performance microwave semiconductor device by disposing semiconductor chip thereon
GB2276977B (en) 1992-12-08 1996-09-18 Hughes Aircraft Co Thermal matched ic chip assembly and fabrication method
JP2541487B2 (ja) * 1993-11-29 1996-10-09 日本電気株式会社 半導体装置パッケ―ジ
US5455387A (en) * 1994-07-18 1995-10-03 Olin Corporation Semiconductor package with chip redistribution interposer
US5766982A (en) * 1996-03-07 1998-06-16 Micron Technology, Inc. Method and apparatus for underfill of bumped or raised die
JP2828021B2 (ja) * 1996-04-22 1998-11-25 日本電気株式会社 ベアチップ実装構造及び製造方法
US5868887A (en) 1996-11-08 1999-02-09 W. L. Gore & Associates, Inc. Method for minimizing warp and die stress in the production of an electronic assembly
US5844319A (en) * 1997-03-03 1998-12-01 Motorola Corporation Microelectronic assembly with collar surrounding integrated circuit component on a substrate
US6011304A (en) * 1997-05-05 2000-01-04 Lsi Logic Corporation Stiffener ring attachment with holes and removable snap-in heat sink or heat spreader/lid
US5909057A (en) * 1997-09-23 1999-06-01 Lsi Logic Corporation Integrated heat spreader/stiffener with apertures for semiconductor package
US5936304A (en) 1997-12-10 1999-08-10 Intel Corporation C4 package die backside coating
US6081416A (en) * 1998-05-28 2000-06-27 Trinh; Hung Lead frames for mounting ceramic electronic parts, particularly ceramic capacitors, where the coefficient of thermal expansion of the lead frame is less than that of the ceramic

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55107247A (en) * 1979-02-09 1980-08-16 Matsushita Electric Ind Co Ltd Hybrid integrated circuit
JPS58138050A (ja) * 1982-02-10 1983-08-16 Sumitomo Electric Ind Ltd 半導体装置の製造方法
US5877070A (en) * 1997-05-31 1999-03-02 Max-Planck Society Method for the transfer of thin layers of monocrystalline material to a desirable substrate

Also Published As

Publication number Publication date
DE10034309A1 (de) 2001-04-05
TW497233B (en) 2002-08-01
DE10034309B4 (de) 2004-03-04
GB0017054D0 (en) 2000-08-30
GB2356084B (en) 2003-10-22
GB2356084A (en) 2001-05-09
US6320754B1 (en) 2001-11-20
JP2001085819A (ja) 2001-03-30
KR20010021214A (ko) 2001-03-15

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