KR100671510B1 - 박막 트랜지스터 액정 표시 장치의 제조 방법 - Google Patents
박막 트랜지스터 액정 표시 장치의 제조 방법 Download PDFInfo
- Publication number
- KR100671510B1 KR100671510B1 KR1020000036704A KR20000036704A KR100671510B1 KR 100671510 B1 KR100671510 B1 KR 100671510B1 KR 1020000036704 A KR1020000036704 A KR 1020000036704A KR 20000036704 A KR20000036704 A KR 20000036704A KR 100671510 B1 KR100671510 B1 KR 100671510B1
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- South Korea
- Prior art keywords
- layer
- amorphous silicon
- mask
- gate
- depositing
- Prior art date
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- 238000000034 method Methods 0.000 title abstract description 37
- 238000004519 manufacturing process Methods 0.000 title abstract description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 28
- 238000000151 deposition Methods 0.000 claims abstract description 11
- 238000000059 patterning Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 6
- 230000001681 protective effect Effects 0.000 claims abstract description 4
- 239000007772 electrode material Substances 0.000 claims 2
- 239000010408 film Substances 0.000 abstract description 15
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 13
- 239000010409 thin film Substances 0.000 abstract description 10
- 238000002161 passivation Methods 0.000 abstract description 7
- 238000000206 photolithography Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000004990 Smectic liquid crystal Substances 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/40—Arrangements for improving the aperture ratio
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
그다음 상기 박막과 n+ 비정질 실리콘(a-Si)층(4)을 하나의 마스크(mask)로 하여 포토리소그라피 공정으로 건식 또는 습식 에칭법으로 에칭하여 드레인전극(2)과 소스전극(3)을 형성한다. 이때 드레인전극(2)과 및 소스전극(3)의 상부에는 n+ 비정질 실리콘(a-Si)층(4)이 남게된다.
Claims (1)
- 투명 기판위에 n+ 비정질 실리콘층을 상부에 구비하는 데이터라인을 패턴닝하여 드레인 및 소스 전극을 형성하는 공정과,상기 구조의 전표면에 액티브층과 게이트 절연막 및 게이트 전극 물질을 연속적으로 증착하는 한 후, 상기 게이트 전극 물질과 게이트 절연막 및 액티브층을 하나의 마스크로 식각하여 순차적으로 패턴닝하여 액티브층 패턴 및 게이트절연막 패턴과 중첩되어있는 게이트전극을 형성하여, 상기 게이트 전극이 남아 있는 부분의 n+ 비정질 실리콘층은 오믹 콘택하고, 상기 게이트전극과 중첩되지 않은 드레인 및 소스 전극 상부의 n+ 비정질 실리콘층은 식각하는 공정과,상기 구조의 전표면에 보호막을 증착한 후, 상기 드레인 전극에서 콘택으로 예정된 부분상의 보호막을 식각하여 비아홀을 형성하는 공정과,상기 구조의 전표면에 화소전극인 투명전도막을 증착한 후 패턴닝하여 투명전도막 패턴을 형성하는 공정을 포함하여 이루어진 것을 특징으로 하는 박막 트랜지스터 액정 표시 장치의 제조 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020000036704A KR100671510B1 (ko) | 2000-06-30 | 2000-06-30 | 박막 트랜지스터 액정 표시 장치의 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020000036704A KR100671510B1 (ko) | 2000-06-30 | 2000-06-30 | 박막 트랜지스터 액정 표시 장치의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020002510A KR20020002510A (ko) | 2002-01-10 |
KR100671510B1 true KR100671510B1 (ko) | 2007-01-19 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020000036704A KR100671510B1 (ko) | 2000-06-30 | 2000-06-30 | 박막 트랜지스터 액정 표시 장치의 제조 방법 |
Country Status (1)
Country | Link |
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KR (1) | KR100671510B1 (ko) |
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- 2000-06-30 KR KR1020000036704A patent/KR100671510B1/ko active IP Right Grant
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KR20020002510A (ko) | 2002-01-10 |
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