US20020050599A1 - Array substrate for liquid crystal display device and method for manufacturing the same - Google Patents

Array substrate for liquid crystal display device and method for manufacturing the same Download PDF

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Publication number
US20020050599A1
US20020050599A1 US09/984,027 US98402701A US2002050599A1 US 20020050599 A1 US20020050599 A1 US 20020050599A1 US 98402701 A US98402701 A US 98402701A US 2002050599 A1 US2002050599 A1 US 2002050599A1
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Prior art keywords
buffer layer
array substrate
electrode
substrate
thin film
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US09/984,027
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Hyun-Kyu Lee
Yong-In Park
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LG Display Co Ltd
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LG Philips LCD Co Ltd
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Assigned to LG.PHILIPS LCD CO., LTD. reassignment LG.PHILIPS LCD CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LEE, HYUN-KYU, PARK, YONG-IN
Publication of US20020050599A1 publication Critical patent/US20020050599A1/en
Priority to US11/367,363 priority Critical patent/US7531372B2/en
Assigned to LG DISPLAY CO., LTD. reassignment LG DISPLAY CO., LTD. CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: LG.PHILIPS LCD CO., LTD.
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133305—Flexible substrates, e.g. plastics, organic film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support

Definitions

  • the present invention relates to a liquid crystal display (LCD) device and a method for fabricating the same, and more particularly, to an array substrate having thin film transistors for a liquid crystal display (LCD) device and a method for fabricating the array substrate using flexible materials.
  • LCD liquid crystal display
  • a liquid crystal display (LCD) device uses optical anisotropy characteristics of liquid crystal molecules to display images.
  • Typical LCD devices include upper and lower substrates with a liquid crystal material interposed therebetween.
  • FIG. 1 is an exploded perspective view illustrating a typical LCD device.
  • the LCD device includes an upper substrate 9 and a lower substrate 11 opposing each other and a liquid crystal layer 14 interposed therebetween.
  • the upper substrate 9 and the lower substrate 11 are commonly referred to as a color filter substrate and an array substrate, respectively.
  • a substrate 5 , a black matrix 6 and a color filter layer 7 that includes a plurality of sub-color-filters red (R), green (G), and blue (B) are formed on the upper substrate 9 .
  • the black matrix 6 surrounds each of the sub-color-filters to form an array matrix.
  • a common electrode 18 is formed to cover the color filter layer 7 and the black matrix 6 on the upper substrate 9 .
  • the lower substrate 11 includes a plurality of thin film transistors (TFTs) “T” arranged in an array matrix on a substrate 22 corresponding to the color filter layer 7 .
  • TFTs thin film transistors
  • Each of the TFTs “T” function as switching elements.
  • a plurality of crossing gate lines 13 and data lines 15 are orthogonally disposed on the lower substrate 11 such that each of the TFTs “T” are located near a corresponding crossing portion of the gate lines 13 and the data lines 15 , thereby defining a pixel region “P.”
  • a pixel electrode 17 is disposed and is made of a transparent conductive material such as indium tin oxide (ITO), for example.
  • ITO indium tin oxide
  • Liquid crystal molecules of the liquid crystal layer 14 are aligned according to electric signals applied by the TFTs “T,” thereby controlling incident rays of light to display an image.
  • electrical signals applied to the gate line 13 and the data line 15 are transmitted to a gate electrode and a source electrode of each the TFTs “T,” respectively.
  • the signal applied to the drain electrode is transmitted to the pixel electrode 17 , thereby aligning the liquid crystal molecules of the liquid crystal layer 14 in a first direction.
  • light generated from a backlight selectively passes through the liquid crystal layer 14 to display an image.
  • a fabricating process for the above-described array substrate requires repeated steps of deposition and patterning of various layers.
  • the patterning steps implement photolithographic processing steps, i.e., a masking step, including selective light exposure using a mask, i.e., a photomask. Since one cycle of the photolithographic processing step is facilitated with a single mask, the total number of masks used in the fabrication process is a critical factor in determining the necessary total number of patterning steps.
  • fabrication errors associated with the fabricating processes may decrease.
  • other processing steps such as etching and striping, for example, are also repeated during fabrication of the array substrate.
  • FIG. 2 is an enlarged plan view illustrating a pixel of a related art array substrate 11 for a liquid crystal display.
  • the array substrate 11 includes a pixel “P” defined by crossing gate and data lines 13 and 15 , respectively.
  • the pixel “P” includes a TFT “T” as a switching element, the pixel electrode 17 , and a storage capacitor “C.”
  • the TFT “T” includes a gate electrode 26 , a source electrode 28 , a drain electrode 30 , and an active layer 55 .
  • the source electrode 28 is electrically connected to the data line 15
  • the gate electrode 26 is electrically connected to the gate line 13 .
  • FIG. 3 is a cross sectional view along II-II of FIG. 2, showing a related art array structure resulting from a conventional fabricating sequence.
  • a transparent glass substrate 22 is used to form a switching element thereon.
  • the thin film transistor “T” including the gate electrode 26 , the source electrode 28 and the drain electrode 30 is formed on the substrate 22 .
  • a passivation layer 29 is subsequently formed on the thin film transistor “T” and the pixel electrode 17 that contacts the drain electrode 30 is formed thereon.
  • the present invention is directed to an array substrate for a liquid crystal display device and a method for fabricating the same that substantially obviates one or more of problems due to limitations and disadvantages of the related art.
  • An object of the present invention is to provide an array substrate which is made of a flexible material and a method for fabricating the same that is flexible and can dampen external impacts.
  • an array substrate for a liquid crystal display device includes a flexible substrate, a buffer layer on the substrate, a thin film transistor including a gate electrode, a source electrode and a drain electrode on the buffer layer, and a pixel electrode on the thin film transistor.
  • a method for fabricating an array substrate includes the steps of forming a buffer layer on a metal substrate, forming a thin film transistor including a gate electrode, a source electrode and a drain electrode on the buffer layer, forming a pixel electrode contacting the drain electrode, removing the metal substrate, and forming a plastic material beneath the buffer layer.
  • a liquid crystal display device includes an elastic substrate, a buffer layer on the substrate, a thin film transistor including a gate electrode, a source electrode and a drain electrode on the buffer layer, a passivation layer on the thin film transistor, and a pixel electrode on the passivation layer.
  • FIG. 1 is an exploded perspective view showing a color liquid crystal display device of the related art
  • FIG. 2 is an enlarged plan view showing a pixel of an array substrate for a liquid crystal display device of the related art
  • FIG. 3 is a cross-sectional view taken along II-II of FIG. 2;
  • FIGS. 4A to 4 F are cross-sectional views showing an exemplary fabricating sequence according to the present invention.
  • FIGS. 4 A- 4 F show an exemplary process for forming an inverse staggered type thin film transistor of a back channel etch structure according to the present invention.
  • a buffer layer 113 may be formed on a substrate 111 by deposition, for example.
  • the buffer layer 113 may include an insulating material such as silicon oxide (SiO 2 ), silicon nitride (SiN x ), for example, and the substrate 111 may include a metal material that can be easily etched away.
  • the buffer layer 113 improves deposition quality of conductive lines subsequently formed thereon, and protects metal ions of the substrate from migrating into the conductive lines.
  • a conductive metal material selected from a group of aluminum (Al), aluminum alloy, molybdenum (Mo), and tungsten (W), for example, may be deposited on the buffer layer 113 .
  • the conductive metal material is subsequently patterned to form a gate line (not shown in figure) and a gate electrode 126 .
  • an anodized film (not shown) may be formed on the gate electrode 126 .
  • a gate insulating layer 128 may be formed on the gate electrode 126 by deposition or coating of an inorganic insulating material selected from a group including silicon oxide (SiO 2 ) and silicon nitride (SiN x ), for example, or an organic insulating material selected from a group including benzocyclobutene and an acrylic resin, for example.
  • an intrinsic semiconductor layer 130 and an extrinsic doped semiconductor layer 132 may be formed on the gate insulating layer 128 by deposition of intrinsic amorphous silicon and doped amorphous silicon, respectively.
  • an active layer 155 and an ohmic contact layer 156 may be formed to overlap over the gate electrode 126 by patterning the intrinsic semiconductor layer 130 and the doped semiconductor layer 132 .
  • a source electrode 159 and a drain electrode 161 may be formed by deposition of a conductive metal material selected from a group including molybdenum (Mo), tungsten (W), chromium (Cr), and an aluminum alloy, for example, on the ohmic contact layer 156 . Subsequently, the conductive metal material is patterned to form the source and drain electrodes 159 and 161 , and a data line 115 extending perpendicularly from the source electrode 159 , which, in combination with the crossing gate line (not shown), defines a pixel region.
  • Mo molybdenum
  • W tungsten
  • Cr chromium
  • a passivation layer 165 may be formed by deposition or coating of an insulating material on the substrate. Then, a drain contact hole 167 may be formed over the drain electrode 161 .
  • the passivation layer 165 may include benzocyclobutene and an acrylic resin, for example, and the passivation layer may be formed flat as shown in the FIG. 4D.
  • a pixel electrode 171 may be formed by deposition of a transparent conductive metal material including indium-tin-oxide (ITO) and indium-zinc-oxide (IZO), for example, on the passivation layer 165 .
  • the transparent conductive metal material may be patterned, thereby forming the pixel electrode 171 .
  • the pixel electrode 171 may contact the drain electrode 161 through the drain contact hole 167 .
  • an orientation film may be formed on the pixel electrode 171 .
  • the metal substrate 111 is removed by etching, for example, thereby exposing the buffer layer 113 to ambient conditions.
  • an elastic material i.e., plastic
  • a roller for example, to give the elastic material a support force and flatness.
  • the applied elastic material may function as a lower substrate.
  • the elastic material for coating may be selected from a group including polycarbonate (PC) and polystyrene, for example.
  • the entire array substrate may be dipped into a melted elastic solution after the metal substrate is etched away. Then, a portion of the elastic material coated on an upper part of the array substrate may be removed, and a portion of the elastic material coated beneath the buffer layer 113 is shaped flat.
  • the flexible array substrate may be fabricated and damage to the array substrate can be prevented during subsequent assembling processes.

Abstract

An array substrate for a liquid crystal display device includes a flexible substrate, a buffer layer on the flexible substrate, a thin film transistor including a gate electrode, a source electrode and a drain electrode on the buffer layer, and a pixel electrode on the thin film transistor.

Description

  • The present application claims the benefit of Korean Patent Application No. P2000-63745, filed on Oct. 28, 2000 in Korea, which is hereby incorporated by reference. [0001]
    • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention [0002]
  • The present invention relates to a liquid crystal display (LCD) device and a method for fabricating the same, and more particularly, to an array substrate having thin film transistors for a liquid crystal display (LCD) device and a method for fabricating the array substrate using flexible materials. [0003]
  • 2. Discussion of the Related Art [0004]
  • A liquid crystal display (LCD) device uses optical anisotropy characteristics of liquid crystal molecules to display images. Typical LCD devices include upper and lower substrates with a liquid crystal material interposed therebetween. [0005]
  • FIG. 1 is an exploded perspective view illustrating a typical LCD device. The LCD device includes an [0006] upper substrate 9 and a lower substrate 11 opposing each other and a liquid crystal layer 14 interposed therebetween. The upper substrate 9 and the lower substrate 11 are commonly referred to as a color filter substrate and an array substrate, respectively. A substrate 5, a black matrix 6 and a color filter layer 7 that includes a plurality of sub-color-filters red (R), green (G), and blue (B) are formed on the upper substrate 9. The black matrix 6 surrounds each of the sub-color-filters to form an array matrix. Additionally, a common electrode 18 is formed to cover the color filter layer 7 and the black matrix 6 on the upper substrate 9.
  • The [0007] lower substrate 11 includes a plurality of thin film transistors (TFTs) “T” arranged in an array matrix on a substrate 22 corresponding to the color filter layer 7. Each of the TFTs “T” function as switching elements. In addition, a plurality of crossing gate lines 13 and data lines 15 are orthogonally disposed on the lower substrate 11 such that each of the TFTs “T” are located near a corresponding crossing portion of the gate lines 13 and the data lines 15, thereby defining a pixel region “P.” In the pixel region “P,” a pixel electrode 17 is disposed and is made of a transparent conductive material such as indium tin oxide (ITO), for example.
  • Liquid crystal molecules of the [0008] liquid crystal layer 14 are aligned according to electric signals applied by the TFTs “T,” thereby controlling incident rays of light to display an image. Specifically, electrical signals applied to the gate line 13 and the data line 15 are transmitted to a gate electrode and a source electrode of each the TFTs “T,” respectively. The signal applied to the drain electrode is transmitted to the pixel electrode 17, thereby aligning the liquid crystal molecules of the liquid crystal layer 14 in a first direction. Then, light generated from a backlight (not shown in the figure) selectively passes through the liquid crystal layer 14 to display an image.
  • A fabricating process for the above-described array substrate requires repeated steps of deposition and patterning of various layers. The patterning steps implement photolithographic processing steps, i.e., a masking step, including selective light exposure using a mask, i.e., a photomask. Since one cycle of the photolithographic processing step is facilitated with a single mask, the total number of masks used in the fabrication process is a critical factor in determining the necessary total number of patterning steps. Furthermore, as fabricating processes for the array substrate become more simplified, fabrication errors associated with the fabricating processes may decrease. Moreover, other processing steps such as etching and striping, for example, are also repeated during fabrication of the array substrate. [0009]
  • FIG. 2 is an enlarged plan view illustrating a pixel of a related [0010] art array substrate 11 for a liquid crystal display. In the FIG. 2, the array substrate 11 includes a pixel “P” defined by crossing gate and data lines 13 and 15, respectively. The pixel “P” includes a TFT “T” as a switching element, the pixel electrode 17, and a storage capacitor “C.” The TFT “T” includes a gate electrode 26, a source electrode 28, a drain electrode 30, and an active layer 55. The source electrode 28 is electrically connected to the data line 15, and the gate electrode 26 is electrically connected to the gate line 13.
  • FIG. 3 is a cross sectional view along II-II of FIG. 2, showing a related art array structure resulting from a conventional fabricating sequence. In FIG. 3, a [0011] transparent glass substrate 22 is used to form a switching element thereon. The thin film transistor “T” including the gate electrode 26, the source electrode 28 and the drain electrode 30 is formed on the substrate 22. A passivation layer 29 is subsequently formed on the thin film transistor “T” and the pixel electrode 17 that contacts the drain electrode 30 is formed thereon.
  • In the conventional process described above, mechanical characteristics of the material for the [0012] substrate 22, such as that of glass or quartz, are rigid so that the fabrication processes can be done easily due to minimize deformation of the substrate. However, any concentrated point loading, such as an external impact, can fracture the material.
    • SUMMARY OF THE INVENTION
  • Accordingly, the present invention is directed to an array substrate for a liquid crystal display device and a method for fabricating the same that substantially obviates one or more of problems due to limitations and disadvantages of the related art. [0013]
  • An object of the present invention is to provide an array substrate which is made of a flexible material and a method for fabricating the same that is flexible and can dampen external impacts. [0014]
  • Additional features and advantages of the invention will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings. [0015]
  • To achieve these and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described, an array substrate for a liquid crystal display device includes a flexible substrate, a buffer layer on the substrate, a thin film transistor including a gate electrode, a source electrode and a drain electrode on the buffer layer, and a pixel electrode on the thin film transistor. [0016]
  • In another aspect, a method for fabricating an array substrate includes the steps of forming a buffer layer on a metal substrate, forming a thin film transistor including a gate electrode, a source electrode and a drain electrode on the buffer layer, forming a pixel electrode contacting the drain electrode, removing the metal substrate, and forming a plastic material beneath the buffer layer. [0017]
  • In another aspect, a liquid crystal display device includes an elastic substrate, a buffer layer on the substrate, a thin film transistor including a gate electrode, a source electrode and a drain electrode on the buffer layer, a passivation layer on the thin film transistor, and a pixel electrode on the passivation layer. [0018]
  • It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.[0019]
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention. In the drawings: [0020]
  • FIG. 1 is an exploded perspective view showing a color liquid crystal display device of the related art; [0021]
  • FIG. 2 is an enlarged plan view showing a pixel of an array substrate for a liquid crystal display device of the related art; [0022]
  • FIG. 3 is a cross-sectional view taken along II-II of FIG. 2; and [0023]
  • FIGS. 4A to [0024] 4F are cross-sectional views showing an exemplary fabricating sequence according to the present invention.
    • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • Reference will now be made in detail to the preferred embodiments of the present invention, which are illustrated in the accompanying drawings. [0025]
  • FIGS. [0026] 4A-4F show an exemplary process for forming an inverse staggered type thin film transistor of a back channel etch structure according to the present invention. In FIG. 4A, a buffer layer 113 may be formed on a substrate 111 by deposition, for example. The buffer layer 113 may include an insulating material such as silicon oxide (SiO2), silicon nitride (SiNx), for example, and the substrate 111 may include a metal material that can be easily etched away. The buffer layer 113 improves deposition quality of conductive lines subsequently formed thereon, and protects metal ions of the substrate from migrating into the conductive lines. Next, a conductive metal material selected from a group of aluminum (Al), aluminum alloy, molybdenum (Mo), and tungsten (W), for example, may be deposited on the buffer layer 113. The conductive metal material is subsequently patterned to form a gate line (not shown in figure) and a gate electrode 126. In addition, an anodized film (not shown) may be formed on the gate electrode 126.
  • In FIG. 4B, a [0027] gate insulating layer 128 may be formed on the gate electrode 126 by deposition or coating of an inorganic insulating material selected from a group including silicon oxide (SiO2) and silicon nitride (SiNx), for example, or an organic insulating material selected from a group including benzocyclobutene and an acrylic resin, for example. Subsequently, an intrinsic semiconductor layer 130 and an extrinsic doped semiconductor layer 132 may be formed on the gate insulating layer 128 by deposition of intrinsic amorphous silicon and doped amorphous silicon, respectively.
  • In FIG. 4C, an [0028] active layer 155 and an ohmic contact layer 156 may be formed to overlap over the gate electrode 126 by patterning the intrinsic semiconductor layer 130 and the doped semiconductor layer 132.
  • In FIG. 4D, a [0029] source electrode 159 and a drain electrode 161 may be formed by deposition of a conductive metal material selected from a group including molybdenum (Mo), tungsten (W), chromium (Cr), and an aluminum alloy, for example, on the ohmic contact layer 156. Subsequently, the conductive metal material is patterned to form the source and drain electrodes 159 and 161, and a data line 115 extending perpendicularly from the source electrode 159, which, in combination with the crossing gate line (not shown), defines a pixel region.
  • After forming the source and drain [0030] electrodes 159 and 161, a passivation layer 165 may be formed by deposition or coating of an insulating material on the substrate. Then, a drain contact hole 167 may be formed over the drain electrode 161. The passivation layer 165 may include benzocyclobutene and an acrylic resin, for example, and the passivation layer may be formed flat as shown in the FIG. 4D. Then a pixel electrode 171 may be formed by deposition of a transparent conductive metal material including indium-tin-oxide (ITO) and indium-zinc-oxide (IZO), for example, on the passivation layer 165. Subsequently, the transparent conductive metal material may be patterned, thereby forming the pixel electrode 171. The pixel electrode 171 may contact the drain electrode 161 through the drain contact hole 167. In addition, although not shown in the figures, an orientation film may be formed on the pixel electrode 171.
  • In FIG. 4E, the [0031] metal substrate 111 is removed by etching, for example, thereby exposing the buffer layer 113 to ambient conditions.
  • In FIG. 4F, an elastic material, i.e., plastic, may be applied beneath the [0032] buffer layer 113 using a roller, for example, to give the elastic material a support force and flatness. Accordingly, the applied elastic material may function as a lower substrate. The elastic material for coating may be selected from a group including polycarbonate (PC) and polystyrene, for example.
  • Alternatively, instead of using the roller for applying the elastic material to the [0033] buffer layer 113, the entire array substrate may be dipped into a melted elastic solution after the metal substrate is etched away. Then, a portion of the elastic material coated on an upper part of the array substrate may be removed, and a portion of the elastic material coated beneath the buffer layer 113 is shaped flat. By using either method, the flexible array substrate may be fabricated and damage to the array substrate can be prevented during subsequent assembling processes.
  • It will be apparent to those skilled in the art that various modifications and variations can be made in the method of manufacturing an array substrate of the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents. [0034]

Claims (20)

What is claimed is:
1. An array substrate for a liquid crystal display device, comprising:
a flexible substrate;
a buffer layer on the flexible substrate;
a thin film transistor including a gate electrode, a source electrode and a drain electrode on the buffer layer; and
a pixel electrode on the thin film transistor.
2. The array substrate according to claim 1, wherein the flexible substrate includes at least a plastic material.
3. The array substrate according to claim 2, wherein the plastic material includes at least one of polycarbonate (PC) and polystyrene.
4. The array substrate according to claim 1, wherein the buffer layer includes at least one of silicon oxide (SiO2) and silicon nitride (SiNx).
5. The array substrate according to claim 1, wherein the gate electrode includes at least one of aluminum (Al), aluminum alloy, molybdenum (Mo), and tungsten (W).
6. The array substrate according to claim 1, wherein the source and drain electrodes include at least one of molybdenum (Mo), tungsten (W), chromium (Cr), and an aluminum alloy.
7. The array substrate according to claim 1, wherein the pixel electrode includes at least one of indium-tin-oxide (ITO) and indium-zinc-oxide (IZO).
8. The array substrate according to claim 1, further including a gate line connected to the gate electrode, and a data line crossing the gate line.
9. A method for fabricating an array substrate, comprising the steps of:
forming a buffer layer on a metal substrate;
forming a thin film transistor including a gate electrode, a source electrode and a drain electrode on the buffer layer;
forming a pixel electrode contacting the drain electrode;
removing the metal substrate; and
forming a plastic material beneath the buffer layer.
10. The method according to claim 9, wherein the substrate is removed by an etchant.
11. The method according to claim 9, wherein the step of forming a plastic material includes at least using a roller to apply the plastic material to the buffer layer.
12. The method according to claim 9, wherein the buffer layer includes at least one of silicon oxide (SiO2) and silicon nitride (SiNx).
13. The method according to claim 9, wherein the gate electrode includes at least one of aluminum (Al), aluminum alloy, molybdenum (Mo), and tungsten (W).
14. The method according to claim 9, wherein the source and drain electrodes include at least one of molybdenum (Mo), tungsten (W), chromium (Cr), and an aluminum alloy.
15. The method according to claim 9, wherein the pixel electrode includes at least one of indium-tin-oxide (ITO) and indium-zinc-oxide (IZO).
16. The method according to claim 9, wherein the plastic material includes at least one of polycarbonate (PC) and polystyrene.
17. A liquid crystal display device, comprising:
an elastic substrate;
a buffer layer on the elastic substrate;
a thin film transistor including a gate electrode, a source electrode and a drain electrode on the buffer layer;
a passivation layer on the thin film transistor; and
a pixel electrode on the passivation layer.
18. The device according to claim 17, wherein the elastic substrate includes at least one of polycarbonate (PC) and polystyrene.
19. The device according to claim 17, wherein the buffer layer includes at least one of silicon oxide (SiO2) and silicon nitride (SiNx).
20. The device according to claim 17, wherein the passivation layer includes at least one of benzocyclobutene and an acrylic resin.
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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030186489A1 (en) * 2002-03-26 2003-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for preparing the same
US20040266073A1 (en) * 2003-02-06 2004-12-30 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device and display device
US20060181198A1 (en) * 2005-02-17 2006-08-17 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Display device and sputtering target for producing the same
US20060186512A1 (en) * 2002-11-08 2006-08-24 Koninklijke Philips Electronics N. V. Flexible device and method of manufacturing the same
US20070172972A1 (en) * 2003-02-05 2007-07-26 Shunpei Yamazaki Manufacture method of display device
US20080003728A1 (en) * 2006-06-28 2008-01-03 Samsung Electronics Co., Ltd Thin film transistor array panel and method of manufacturing the same
US20080050852A1 (en) * 2006-08-23 2008-02-28 Tae-Hyung Hwang Manufacturing of flexible display device panel
US20080121877A1 (en) * 2006-11-27 2008-05-29 3M Innovative Properties Company Thin film transistor with enhanced stability
US20080121528A1 (en) * 2006-11-27 2008-05-29 3M Innovative Properties Company Method of fabricating thin film transistor
US20080277658A1 (en) * 2007-05-11 2008-11-13 Hun-Jung Lee Thin film transistor, method of manufacturing the same, organic light emitting display apparatus comprising the thin film transistor, and method of manufacturing the same
US20100006833A1 (en) * 2008-07-08 2010-01-14 Samsung Mobile Display Co., Ltd. Thin film transistor, method of manufacturing the same and flat panel display device having the same
CN102654702A (en) * 2012-03-06 2012-09-05 京东方科技集团股份有限公司 TFT (thin film transistor) array substrate, manufacturing method of TFT array substrate and display device
CN105575910A (en) * 2016-03-17 2016-05-11 深圳市华星光电技术有限公司 Preparation method of thin-film transistor substrate, thin-film transistor substrate and liquid crystal panel
CN110729184A (en) * 2019-10-24 2020-01-24 宁波石墨烯创新中心有限公司 Thin film transistor, and manufacturing method and device thereof

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030009824A (en) * 2001-07-24 2003-02-05 (주)신종 A method of producing a thin film device
KR100400753B1 (en) * 2001-10-19 2003-10-08 엘지전자 주식회사 production method of high temperature poly-silicon Thin Film Transistor using metal substrate
KR20040039693A (en) * 2002-11-04 2004-05-12 비오이 하이디스 테크놀로지 주식회사 Method for fabricating liquid crystal display
KR100925456B1 (en) * 2002-11-12 2009-11-06 삼성전자주식회사 Method of manufacturing liquid crystal display
KR101002332B1 (en) 2003-12-30 2010-12-17 엘지디스플레이 주식회사 Liquid Crystal Display Device And Method For Fabricating The Same
KR101345783B1 (en) 2007-02-22 2013-12-27 박동순 Fabrication method of flexible display
KR101352109B1 (en) * 2007-03-05 2014-01-15 엘지디스플레이 주식회사 Manufacturing Method of Display Device
TWI419091B (en) 2009-02-10 2013-12-11 Ind Tech Res Inst Appratus for a transferrable flexible electronic device and method for fabricating a flexible electronic device
KR101618157B1 (en) 2009-12-21 2016-05-09 삼성디스플레이 주식회사 Display device and method for manufacturing the display device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5476810A (en) * 1994-01-31 1995-12-19 U.S. Philips Corporation Manufacture of electronic devices comprising thin-film circuits using a metal foil as a temporary support
US5969377A (en) * 1996-05-11 1999-10-19 Lg Electronics Inc. Liquid crystal display device integrated with driving circuit and method for fabricating the same
US6246070B1 (en) * 1998-08-21 2001-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device provided with semiconductor circuit made of semiconductor element and method of fabricating the same
US20020068390A1 (en) * 1997-07-16 2002-06-06 Gosain Dharam Pal Method of forming semiconductor thin film and plastic substrate

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4610510A (en) 1983-06-13 1986-09-09 Sharp Kabushiki Kaisha Liquid crystal display cell having stepped substrate ends and method for manufacture thereof
JPH02278879A (en) 1989-04-20 1990-11-15 Toshiba Corp Manufacture of thin film transistor
JPH04199638A (en) 1990-11-29 1992-07-20 Ricoh Co Ltd Field effect transistor, display device using the same and manufacture thereof
JPH06118441A (en) * 1991-11-05 1994-04-28 Tadanobu Kato Display cell
US5365356A (en) 1992-08-11 1994-11-15 Minnesota Mining And Manufacturing Company Method of fabricating an encapsulated liquid crystal display
JP3223997B2 (en) 1994-09-13 2001-10-29 シャープ株式会社 Logic circuit and liquid crystal display
JP3698749B2 (en) * 1995-01-11 2005-09-21 株式会社半導体エネルギー研究所 Liquid crystal cell manufacturing method and apparatus, and liquid crystal cell production system
JPH08278519A (en) * 1995-04-06 1996-10-22 Toshiba Electron Eng Corp Production of liquid crystal display device
EP0849788B1 (en) * 1996-12-18 2004-03-10 Canon Kabushiki Kaisha Process for producing semiconductor article by making use of a substrate having a porous semiconductor layer
US5796121A (en) * 1997-03-25 1998-08-18 International Business Machines Corporation Thin film transistors fabricated on plastic substrates
JP3161438B2 (en) 1997-11-25 2001-04-25 日本電気株式会社 Active matrix type liquid crystal display device and manufacturing method thereof
TW410478B (en) 1998-05-29 2000-11-01 Lucent Technologies Inc Thin-film transistor monolithically integrated with an organic light-emitting diode
US6274412B1 (en) 1998-12-21 2001-08-14 Parelec, Inc. Material and method for printing high conductivity electrical conductors and other components on thin film transistor arrays
US6461775B1 (en) 1999-05-14 2002-10-08 3M Innovative Properties Company Thermal transfer of a black matrix containing carbon black
JP2001013500A (en) 1999-06-30 2001-01-19 Matsushita Electric Ind Co Ltd Reflection type liquid crystal display element
KR100646783B1 (en) 1999-11-23 2006-11-17 삼성전자주식회사 a thin film transistor array panel for a liquid crystal display and a manufacturing method thereof
CN1237623C (en) * 2000-04-18 2006-01-18 伊英克公司 Process for fabricating thin transistor
TW564471B (en) * 2001-07-16 2003-12-01 Semiconductor Energy Lab Semiconductor device and peeling off method and method of manufacturing semiconductor device
TWI380080B (en) * 2003-03-07 2012-12-21 Semiconductor Energy Lab Liquid crystal display device and method for manufacturing the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5476810A (en) * 1994-01-31 1995-12-19 U.S. Philips Corporation Manufacture of electronic devices comprising thin-film circuits using a metal foil as a temporary support
US5969377A (en) * 1996-05-11 1999-10-19 Lg Electronics Inc. Liquid crystal display device integrated with driving circuit and method for fabricating the same
US20020068390A1 (en) * 1997-07-16 2002-06-06 Gosain Dharam Pal Method of forming semiconductor thin film and plastic substrate
US6246070B1 (en) * 1998-08-21 2001-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device provided with semiconductor circuit made of semiconductor element and method of fabricating the same

Cited By (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7208355B2 (en) 2002-03-26 2007-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for preparing the same
US20070295964A1 (en) * 2002-03-26 2007-12-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for preparing the same
US6853052B2 (en) * 2002-03-26 2005-02-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a buffer layer against stress
US20050127443A1 (en) * 2002-03-26 2005-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for preparing the same
US9070773B2 (en) 2002-03-26 2015-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a thin film transistor and a capacitor
US20030186489A1 (en) * 2002-03-26 2003-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for preparing the same
US8368071B2 (en) 2002-03-26 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a thin film transistor and capacitor
US20060186512A1 (en) * 2002-11-08 2006-08-24 Koninklijke Philips Electronics N. V. Flexible device and method of manufacturing the same
US8067802B2 (en) * 2002-11-08 2011-11-29 Koninklijke Philips Electronics N.V. Flexible device and method of manufacturing the same
US20070172972A1 (en) * 2003-02-05 2007-07-26 Shunpei Yamazaki Manufacture method of display device
US7736955B2 (en) * 2003-02-05 2010-06-15 Semiconductor Energy Laboratory Co., Ltd. Manufacture method of display device by using droplet discharge method
US8569119B2 (en) 2003-02-06 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device and display device
US20040266073A1 (en) * 2003-02-06 2004-12-30 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device and display device
US20110086569A1 (en) * 2003-02-06 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device and display device
US7858453B2 (en) 2003-02-06 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device and display device utilizing solution ejector
US8350303B2 (en) 2005-02-17 2013-01-08 Kobe Steel, Ltd. Display device and sputtering target for producing the same
US7622809B2 (en) 2005-02-17 2009-11-24 Kobe Steel, Ltd. Display device and sputtering target for producing the same
US20090176113A1 (en) * 2005-02-17 2009-07-09 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Display device and sputtering target for producing the same
US8088259B2 (en) 2005-02-17 2012-01-03 Kabushiki Kaisha Kobe Seiko Sho Display device and sputtering target for producing the same
US20060181198A1 (en) * 2005-02-17 2006-08-17 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Display device and sputtering target for producing the same
US20080003728A1 (en) * 2006-06-28 2008-01-03 Samsung Electronics Co., Ltd Thin film transistor array panel and method of manufacturing the same
US20080050852A1 (en) * 2006-08-23 2008-02-28 Tae-Hyung Hwang Manufacturing of flexible display device panel
US20080121877A1 (en) * 2006-11-27 2008-05-29 3M Innovative Properties Company Thin film transistor with enhanced stability
US7655127B2 (en) 2006-11-27 2010-02-02 3M Innovative Properties Company Method of fabricating thin film transistor
US20080121528A1 (en) * 2006-11-27 2008-05-29 3M Innovative Properties Company Method of fabricating thin film transistor
US7786494B2 (en) * 2007-05-11 2010-08-31 Samsung Mobile Display Co., Ltd. Thin film transistor, method of manufacturing the same, organic light emitting display apparatus comprising the thin film transistor, and method of manufacturing the same
US20080277658A1 (en) * 2007-05-11 2008-11-13 Hun-Jung Lee Thin film transistor, method of manufacturing the same, organic light emitting display apparatus comprising the thin film transistor, and method of manufacturing the same
US8728862B2 (en) 2008-07-08 2014-05-20 Samsung Display Co., Ltd. Thin film transistor, method of manufacturing the same and flat panel display device having the same
US8193535B2 (en) 2008-07-08 2012-06-05 Samsung Mobile Display Co., Ltd. Thin film transistor, including compound semiconductor oxide, method of manufacturing the same and flat panel display device having the same
US20100006833A1 (en) * 2008-07-08 2010-01-14 Samsung Mobile Display Co., Ltd. Thin film transistor, method of manufacturing the same and flat panel display device having the same
US8178884B2 (en) * 2008-07-08 2012-05-15 Samsung Mobile Display Co., Ltd. Thin film transistor including compound semiconductor oxide, method of manufacturing the same and flat panel display device having the same
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US9276015B2 (en) 2012-03-06 2016-03-01 Boe Technology Group Co., Ltd. TFT array substrate with metal layer between source electrode and pixel electrode
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WO2017156799A1 (en) * 2016-03-17 2017-09-21 深圳市华星光电技术有限公司 Method for manufacturing thin film transistor substrate, thin film transistor substrate and liquid crystal panel
US10082714B2 (en) 2016-03-17 2018-09-25 Shenzhen China Star Optoelectronics Technology Co., Ltd Thin-film transistor substrate manufacturing method, thin-film transistor substrate, and liquid crystal panel
CN110729184A (en) * 2019-10-24 2020-01-24 宁波石墨烯创新中心有限公司 Thin film transistor, and manufacturing method and device thereof

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US7531372B2 (en) 2009-05-12

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