KR20030009824A - A method of producing a thin film device - Google Patents
A method of producing a thin film device Download PDFInfo
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- KR20030009824A KR20030009824A KR1020010044463A KR20010044463A KR20030009824A KR 20030009824 A KR20030009824 A KR 20030009824A KR 1020010044463 A KR1020010044463 A KR 1020010044463A KR 20010044463 A KR20010044463 A KR 20010044463A KR 20030009824 A KR20030009824 A KR 20030009824A
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/036—Manufacturing methods by patterning a pre-deposited material
- H01L2224/0361—Physical or chemical etching
- H01L2224/03616—Chemical mechanical polishing [CMP]
Abstract
Description
본 발명은 박막소자의 제조방법에 관한 것으로서, 보다 상세하게는 투명한 세라믹 재료층을 기판으로 사용하여, 그 위에 Si같은 물질을 단결정, 다결정 또는 비정질 형태로 증착하여 박막소자를 제조한 뒤, 기판과 박막소자를 분리하여, 박막소자를 플라스틱 기판위로 이송하여 다양한 기능을 갖는 박막소자를 제작하는 방법에 관한 것이다.The present invention relates to a method for manufacturing a thin film device, and more particularly, by using a transparent ceramic material layer as a substrate, and depositing a material such as Si on a single crystal, polycrystalline or amorphous form to produce a thin film device, and then The present invention relates to a method of manufacturing a thin film device having various functions by separating the thin film device and transferring the thin film device onto a plastic substrate.
현재 사용하고 있는 박막소자들은 유리기판 위에서 제작한다. 그래서, 대표적인 박막소자인 박막 트랜지스터 액정 디스플레이(thin film transistor liquid crystal display)는 유리 위에서 제작하며 유리의 약한 강도와 무거운 무게로 말미암아 다양한 제품에 사용하는데 많은 어려움이 있다.Current thin film devices are fabricated on glass substrates. Therefore, a thin film transistor liquid crystal display, which is a typical thin film device, is fabricated on glass and has a lot of difficulty in using in various products due to the weak strength and heavy weight of the glass.
기존의 박막 트랜지스터 액정 디스플레이를 만들기 위해서는 먼저 박막 트랜지스터부터 증착한다. 도 1은 박막 트랜지스터의 제조공정을 나타낸 흐름도이고 도 2a 내지 도 2j는 각 과정에서의 박막 트랜지스터를 단면으로 나타낸 예시도이다. 증착을 위해 먼저 유리기판(1)을 준비한다. 기판으로는 일반적으로 코닝1737 기판을 사용하며, 두께는 약 0.7mm이다. 박막 트랜지스터를 제조하기 위해서는 먼저 전극을 형성시켜주어야 하며, 이를 위해 유리기판(1)을 반응로 안에 넣고 반응로 내부의 기압을 0.5Torr로 낮춘 뒤, 스퍼터링(sputtering)을 하여 크롬(Cr)(2)을 2000Å 증착시킨다.(S11과정, 도 2a) 이후, 게이트(gate)를 구성하는 크롬을 제외한 나머지는 산화시켜 제거하기 위하여 포토마스크로 에칭보호막을 입힌 뒤, 에칭으로 크롬을 제거하고 게이트만 남긴다(S12과정, 도 2b). 게이트가 형성되었으면, 게이트 절연막을 증착하기 위하여 PECVD (plasma enhanced chemical vapor deposition)를 사용한다. 게이트 절연막을 증착하기 위해 반응로에 사일렌(SiH4)과 질소(N2)를 혼합하여 증착하면 도 2c에서처럼 약 4000Å 두께로 게이트 절연막(Si3N4)(3)이 형성된다(S13 과정). 게이트 절연막이 형성되었으면, 비정질 실리콘(4)을 증착한다. 이를 위해 반응로 내부온도를 550℃, 내부압력을 500mTorr로 만든 뒤, 사일렌을 주입하여 도 2d에서처럼 비정질 실리콘(4)을 2000Å 두께로 증착한다.(S14 과정) 그리고, 같은 조건으로 반응로 내부온도를 550℃, 내부압력을 500mTorr로 만든 뒤, 사일렌을 주입하여 비정질 실리콘(5)을 500Å 두께로 증착한 뒤, 인(P)을 도핑(doping)하여 도 2e 에서처럼 비정질 실리콘 층을 형성한 후 두 비정질 실리콘층의 일부분을 에칭한다.(S15 과정)In order to make a conventional thin film transistor liquid crystal display, first, a thin film transistor is deposited. 1 is a flowchart illustrating a manufacturing process of a thin film transistor, and FIGS. 2A to 2J are exemplified diagrams illustrating a thin film transistor in each process. First, the glass substrate 1 is prepared for deposition. The substrate is typically a Corning 1737 substrate and is about 0.7 mm thick. In order to manufacture a thin film transistor, an electrode must first be formed. For this purpose, a glass substrate 1 is placed in a reactor and the pressure inside the reactor is reduced to 0.5 Torr, followed by sputtering to form chromium (Cr) (2). ) Is deposited at 2000Å. After the process (S11, FIG. 2A), an etch protection film is coated with a photomask to oxidize and remove the chromium, which leaves the gate. (Step S12, Figure 2b). Once the gate has been formed, plasma enhanced chemical vapor deposition (PECVD) is used to deposit the gate insulating film. In order to deposit the gate insulating film, a mixture of xylene (SiH 4 ) and nitrogen (N 2 ) is deposited in the reactor to form a gate insulating film (Si 3 N 4 ) 3 having a thickness of about 4000 Å as shown in FIG. 2C (S13). ). Once the gate insulating film has been formed, amorphous silicon 4 is deposited. To this end, the internal temperature of the reactor is set at 550 ° C. and the internal pressure is 500 mTorr, followed by injection of xylene to deposit amorphous silicon 4 at a thickness of 2000 μs, as shown in FIG. 2d. After the temperature was set at 550 ° C. and the internal pressure was 500 mTorr, after injecting xylene, the amorphous silicon 5 was deposited to a thickness of 500 Å, and the phosphorus (P) was doped to form an amorphous silicon layer as shown in FIG. 2E. After that, a part of the two amorphous silicon layers is etched.
다시 스퍼터링을 이용하여 도 2f와 같이 크롬(6)을 2000Å의 두께로 증착한다. 이때, 실리콘 박막의 품질을 다결정 또는 단결정과 같이 좋게 하기 위해서는 내부온도를 높이거나 내부압력을 아주 낮게 낮추어야 하며, 이외에도 레이저를 사용한 어닐링(annealing)과 같은 방법을 사용한다. 그러나, 비정질이나 실리콘 결정의 크기가 아주 작은 단결정일 경우, 위에서 설명한 방법을 사용하여 실리콘을 증착한다.(S16 과정)Again sputtering is used to deposit chromium 6 to a thickness of 2000 mm 3 as shown in FIG. 2F. At this time, in order to improve the quality of the silicon thin film like polycrystalline or single crystal, the internal temperature must be increased or the internal pressure must be very low. In addition, a method such as annealing using a laser is used. However, in the case of amorphous or very small single crystals, silicon is deposited using the method described above (step S16).
이후, 다시 에칭을 하여 크롬(Cr)(6)층을 드레인(drain)(61)과 소스(source) 전극(62)으로 분리하고, 다시, n-type 비정질 실리콘 층(5)과 비정질 실리콘 층(4)의 일부를 에칭하여 n-type 비정질 실리콘 층(5)은 도 2i에서 보는 바와 같이, 51, 52로 분리하고, 비정질 실리콘 층(4)의 중앙 부분의 두께를 약 1800Å정도로 만든다.(도 17 과정) 그리고, 절연층을 형성하기 위하여 사일렌과 질소를 주입하여 두께 2500Å의 절연막(7)을 형성하여 박막 트랜지스터를 완성한다.(S18 과정)Subsequently, etching is performed again to separate the chromium (Cr) 6 layer into the drain 61 and the source electrode 62, and again, the n-type amorphous silicon layer 5 and the amorphous silicon layer. A portion of (4) is etched to separate the n-type amorphous silicon layer 5 into 51 and 52, as shown in FIG. 2I, and to make the thickness of the central portion of the amorphous silicon layer 4 about 1800 kPa. 17) Then, in order to form an insulating layer, xylene and nitrogen are injected to form an insulating film 7 having a thickness of 2500 kÅ to complete the thin film transistor.
박막 트랜지스터의 제조가 완성되었으면, 이후, TFT 위에 액정을 주입하고 컬러필터를 증착하여 박막 트랜지스터 액정 디스플레이를 제작할 수 있다. 그러나, 박막 트랜지스터 액정 디스플레이는 유리기판을 사용하기 때문에 충격에 약하고 무게가 무거우며, 두께를 얇게 만드는데 한계가 있어서 전자기기에 부착하여 사용하는데 있어서 많은 어려움이 있다. 그래서, 충격에 강하면서 가볍고, 두께를 자유자재로 조절할 수 있는 박막 액정 디스플레이 장치의 개발이 요구되고 있다. 그 한 예로서, 플라스틱 기판을 사용한 박막 액정 디스플레이 장치를 개발하려고 하지만, 플라스틱 기판은 고분자라는 특성 때문에 증착시 증착가스에 용해될 뿐만 아니라, 열팽창계수가 높아 쉽게 변형되어 증착을 하기 어려우며, 이 외에도 다른 여러 가지 기판을 사용하려고 노력하고 있지만, 아직까지 실용화된 기판은 없는 실정이다.After the manufacture of the thin film transistor is completed, the liquid crystal is injected onto the TFT and the color filter may be deposited to fabricate the thin film transistor liquid crystal display. However, since the thin film transistor liquid crystal display uses a glass substrate, it is weak in impact, heavy in weight, and has a difficulty in attaching to an electronic device due to its limitation in making the thickness thin. Therefore, there is a demand for the development of a thin-film liquid crystal display device that is strong in impact and lightweight, and can be freely adjusted in thickness. As an example, although a thin film liquid crystal display device using a plastic substrate is being developed, the plastic substrate is not only dissolved in the deposition gas during deposition due to its polymer property, but also has a high coefficient of thermal expansion, which makes it difficult to deposit and other materials. While trying to use a variety of substrates, there is no practical substrate yet.
이러한 문제점을 해결하기 위해 제안된 기술로 유럽특허 공보 제371849호(1990. 6. 6)에 "절연층 위에 박막 실리콘 층을 형성하는 방법"이 개시되었다. 이 기술은 "CaF2기판 위에 실리콘(Si)막을 증착하고 실리콘 막 상부를 산화시켜 산화막(a)을 형성시킨 다음, 별도로 산화막(b)이 형성된 실리콘 웨이퍼 위에 옮겨 두 산화막(a,b)이 마주하도록 접합한 후 CaF2기판을 제거하는 방법"이다.In order to solve this problem, European Patent Publication No. 371849 (June 6, 1990) discloses a method of forming a thin film silicon layer on an insulating layer. This technique "deposits a silicon (Si) film on a CaF 2 substrate and oxidizes the top of the silicon film to form an oxide film (a), which is then transferred onto a silicon wafer on which the oxide film (b) is formed, and the two oxide films (a, b) face each other. To remove the CaF 2 substrate after bonding.
이러한 방법은 다음과 같은 문제점을 가지고 있다.This method has the following problems.
·CaF2기판을 제거할 때 NH4CL을 사용하며 Cl이 침투하는 것을 예방하기 위해 전체에 보호막을 증착하여 주어야 한다.NH 4 CL is used to remove the CaF 2 substrate and a protective film must be deposited throughout to prevent Cl penetration.
·CaF2기판을 제거할 때 Si 박막 층의 일부에 구멍이 생길 수가 있다. 이 경우, 아래의 절연층으로 물질이 침투하여 전기소자로 사용할 수 없게 된다.When removing the CaF 2 substrate, a hole may be formed in a part of the Si thin film layer. In this case, the material penetrates into the insulating layer below and cannot be used as an electric element.
·CaF2는 Frenkel defect를 가지고 있어서, 불소(F)의 원자가 격자간(interstitial site)을 통해 확산(diffusion)을 하며, 그 속도가 빠르다. 따라서, 접합을 위해 열을 가하면 실리콘 층으로 불소가 침입하여 실리콘을 n-type으로 바꾸어 버리며 이로 인하여 실리콘 층에 존재하는 전자의 수와 모빌리티(mobility)를 변화시켜 실리콘의 품질이 나빠진다.CaF 2 has a Frenkel defect, which diffuses through the interstitial site of fluorine (F), and is fast. Therefore, when heat is applied for bonding, fluorine invades the silicon layer and changes the silicon to n-type, thereby changing the number and mobility of electrons in the silicon layer, thereby degrading the quality of the silicon.
·절연층을 두층으로 하면 신호처리에 문제가 생길 수 있으면 유전율이 낮아지게 됨으로써 두께를 아주 두껍게 해야 하는 단점이 생긴다.If the insulating layer is made of two layers, if there is a problem in signal processing, the dielectric constant is lowered, which causes the disadvantage of having to make the thickness very thick.
본 발명은 충격에 강한 박막 액정 디스플레이를 제조하는 것을 목적으로 한다.An object of the present invention is to produce a thin film liquid crystal display resistant to impact.
본 발명의 또 다른 목적은 기존의 유리기판이 아닌 다른 기판 위에서 박막 액정 디스플레이를 제작하는 제조방법을 제공하는 것이다.Still another object of the present invention is to provide a manufacturing method of manufacturing a thin film liquid crystal display on a substrate other than the existing glass substrate.
본 발명의 또 다른 목적은 박막 액정 디스플레이 장치의 두께를 얇게 하는 제조방법을 제공하는 것이다.Still another object of the present invention is to provide a manufacturing method for reducing the thickness of a thin film liquid crystal display device.
이러한 목적들을 달성하기 위한 본 발명에 따른 박막소자 제조방법은 제 1 기판 위에 박막소자를 제조하는 과정과, 상기 박막소자 위에 보호층을 형성하는 과정과, 상기 제 1 기판을 제거하는 과정과, 제 1 기판이 제거된 박막소자를 기능성 제 2 기판 위로 이송하는 과정과, 이송된 박막소자를 제 2 기판과 접합하는 과정을포함하여 이루어지는 점을 특징으로 한다.According to an aspect of the present invention, there is provided a method of manufacturing a thin film device, a process of manufacturing a thin film device on a first substrate, forming a protective layer on the thin film device, removing the first substrate, and The method may include transferring the thin film device from which the first substrate has been removed onto the functional second substrate, and bonding the transferred thin film device to the second substrate.
본 발명의 세부적 특징은 상기 제 1 기판을 유리(glass)로 사용하고, 제 2 기판은 기능성 기판으로서 투명한 플라스틱 등이 사용될 수 있다는 점이다.A detailed feature of the present invention is that the first substrate is used as glass, and the second substrate may be a transparent plastic or the like as the functional substrate.
본 발명의 다른 세부적 특징은 보호층을 제거하기 위한 에칭 공정이 부가될 수 있다는 점이다.Another detailed feature of the present invention is that an etching process for removing the protective layer can be added.
도 1은 종래 기술에 따른 박막소자 제조과정을 나타낸 흐름도,1 is a flowchart illustrating a thin film device manufacturing process according to the prior art;
도 2a 내지 도 2j는 도 1의 각 과정을 나타낸 단면도,2A to 2J are cross-sectional views illustrating the processes of FIG. 1;
도 3은 본 발명에 따른 박막소자 제조과정을 나타낸 흐름도,3 is a flowchart illustrating a manufacturing process of a thin film device according to the present invention;
도 4는 박막소자 위에 보호층을 형성한 예시도,4 is an exemplary view in which a protective layer is formed on a thin film device;
도 5는 제 1 기판을 제거한 후의 예시도,5 is an exemplary view after removing the first substrate;
도 6은 제 2 기판 위에 도 5의 박막 소자를 접합한 예시도이다.6 is an exemplary diagram in which the thin film device of FIG. 5 is bonded on a second substrate.
이하, 첨부된 도면을 참조로 본 발명에 따른 박막소자 제조방법을 설명하기로 한다. 먼저 본 발명의 한 실시예로 플라스틱을 기판으로 한 박막 트랜지스터 액정 디스플레이를 제작하기 위해서 본 발명은 전이막방법(thin film transferring method)을 사용한다. 이를 위해, 먼저 유리기판 위에서 박막 트랜지스터를 제작한 뒤, 플라스틱 기판으로 이송하여 액정 디스플레이장치를 만들게 된다.Hereinafter, a thin film device manufacturing method according to the present invention will be described with reference to the accompanying drawings. First, in order to fabricate a thin film transistor liquid crystal display using a plastic substrate as an embodiment of the present invention, the present invention uses a thin film transferring method. To this end, a thin film transistor is first manufactured on a glass substrate, and then transferred to a plastic substrate to make a liquid crystal display device.
도 3은 본 발명에 따른 박막소자 제조방법의 진행과정을 나타낸 흐름도이다. 유리기판 위에 박막 트랜지스터를 제작하는 방법은 앞에서 설명을 했으므로, 지금부터는 박막을 전이하는 방법부터 설명을 시작한다.3 is a flowchart illustrating a process of manufacturing a thin film device according to the present invention. Since a method of fabricating a thin film transistor on a glass substrate has been described above, the method of transitioning a thin film will now be described.
도 2a 내지 도 2j에서처럼, 박막 트랜지스터의 제조가 마무리되면(S1 과정), 박막 트랜지스터를 기판으로부터 분리시켜야한다(S3 과정). 이를 위해 사용할 수 있는 방법은, 먼저 불산(HF)을 이용하여 유리기판을 제거하면 된다. 불산은 유리의 주성분인 이산화규소와 반응을 하여 플로르화실리콘(SiF4)과 물이 생성되며, 반응식은 아래와 같다.2A to 2J, when the manufacturing of the thin film transistor is finished (step S1), the thin film transistor should be separated from the substrate (step S3). A method that can be used for this purpose is to first remove the glass substrate by using hydrofluoric acid (HF). Hydrofluoric acid reacts with silicon dioxide, the main component of glass, to produce silicon fluoride (SiF 4 ) and water.
SiO2+ 4HF = SiF4+ 2H2OSiO 2 + 4 HF = SiF 4 + 2H 2 O
불산을 사용하여 유리기판을 제거할 때에는 불산용액에 담가 유리기판을 제거할 수도 있지만, 이 경우, 불산용액은 유리기판부분만 잠글 정도여야하며, 불산용액에 담그지 않고, 기판부분을 뒤집어서 불산증기를 사용하여 유리기판의 일부분을 제거하는 방식으로 유리기판 전체를 제거하면 된다. 이를 위해 도 4에서처럼 박막 트랜지스터의 외곽부분에 보호층(10)으로서 폴리에틸렌(polyethylene)을 형성하여 박막 트랜지스터부분을 보호해주면서 유리기판을 제거해야 한다.(S2 과정) 보호층인 폴리에틸렌은 불산에 대한 화학적 저항(chemical resistance)이 강하여 불산의 침투를 막아 박막 트랜지스터를 보호해준다.When removing the glass substrate using hydrofluoric acid, the glass substrate may be removed by immersion in hydrofluoric acid solution.In this case, the hydrofluoric acid solution should be locked to only the glass substrate portion. The entire glass substrate may be removed by removing a portion of the glass substrate. To this end, as shown in FIG. 4, polyethylene (polyethylene) is formed on the outer portion of the thin film transistor to protect the thin film transistor and remove the glass substrate (S2 process). Strong chemical resistance prevents the penetration of hydrofluoric acid to protect thin film transistors.
보호층으로 폴리에틸렌을 사용하지 않고 유리기판을 제거하기 위해 영국의 로지텍사(Logitech)에서 개발한 WBT5 본딩시스템(bonding system)을 사용할 수 있다. WBT5 bonding system은 GaAs를 기판으로부터 제거하기 위해 개발된 장치로서, 제거할 기판부분을 제외한 나머지부분을 0CON-199 왁스(wax)로 코팅한 다음, 기판을 제거하는 장치이다. 0CON-199는 wax로서 녹는점이 약 75℃이며, 불산에 대한 화학적 저항이 강하여 박막 트랜지스터를 보호해준다. 그래서, 0CON-199를 본 발명에서 사용한다면, 보호층으로서 0CON-199를 도포한 다음, 불산용액을 사용하여 유리기판을 제거하면 된다.The WBT5 bonding system, developed by Logitech, UK, can be used to remove glass substrates without using polyethylene as a protective layer. The WBT5 bonding system is a device developed to remove GaAs from a substrate. The WBT5 bonding system coats the remaining portions except for the substrate to be removed with 0CON-199 wax and then removes the substrate. As a wax, 0CON-199 has a melting point of about 75 ℃, and has a strong chemical resistance to hydrofluoric acid to protect thin film transistors. Therefore, if 0CON-199 is used in the present invention, 0CON-199 may be coated as a protective layer, and then the glass substrate may be removed using a hydrofluoric acid solution.
불산과 같은 화학물질을 사용하지 않고, 유리기판을 제거하는 방법으로 폴리싱(polishing)이 있다. 폴리싱은 크게 기계적인 방법을 사용하는 기계적 폴리싱(mechanical polishing)과 화학물질을 사용하는 화학적 폴리싱(chemical polishing)이 있다. 기계적 폴리싱은 폴리싱된 면이 성글지만 속도가 빠르며, 화학적 폴리싱은 속도가 느린 반면 폴리싱된 면이 아주 매끄럽다. 그래서, 근래에 들어 양쪽의 장점을 모두 갖춘 화학적 기계적 폴리싱(Chemical mechanical Polishing: 이하 CMP라 함)가 사용되고 있다.Polishing is a method of removing glass substrates without using chemicals such as hydrofluoric acid. Polishing mainly includes mechanical polishing using chemical methods and chemical polishing using chemicals. Mechanical polishing is sparse on the polished side, but fast, and chemical polishing is slow, while the polished side is very smooth. Thus, in recent years, chemical mechanical polishing (hereinafter referred to as CMP) having both advantages has been used.
CMP(Chemical mechanical Polishing)는 알루미나(Al2O3), 실리카(SiO2), 세리아(CeO2) 등의 고체입자와 암모니움 하이드로사이드(ammonium hydroxide), 아세틱/니트릭 산(acetic/nitric acid), 하이드로진 퍼록사이드(hydrogen peroxide) 등 산성 또는 알칼리성 수용액을 포함하는 슬러리(slurry)를 이용하여 화학적 방법과 기계적 방법을 함께 사용하여 보다 정밀하게 표면을 식각하는 방법이며, 폴리싱을 할 때, 스트레스를 거의 유발하지 않아 현재 많이 사용되고 있다. 그래서, 유리 기판을 제거할 때, CMP를 사용하면 박막 트랜지스터에 충격을 주지 않으면서도 유리기판을 제거할 수 있으며, CMP를 시작하기 전에 보호층으로서 폴리에틸렌이나 0CON-199 wax를 도포하여 박막 트랜지스터를 보호해 주어야 한다.Chemical mechanical polishing (CMP) is solid particles such as alumina (Al 2 O 3 ), silica (SiO 2 ) and ceria (CeO 2 ), and ammonium hydroxide, acetic / nitric acid (acetic / nitric) It is a method to etch the surface more precisely by using a chemical method and a mechanical method by using a slurry containing an acidic or alkaline aqueous solution such as acid), hydrogen peroxide (hydrogen peroxide), and when polishing, It causes little stress and is currently used a lot. Therefore, when removing the glass substrate, CMP can be used to remove the glass substrate without impacting the thin film transistor, and protect the thin film transistor by applying polyethylene or 0CON-199 wax as a protective layer before starting the CMP. You must do it.
본 발명에서 사용한 CMP는 세리아(CeO2)와 같은 산화물 입자를 사용하는 방법이다. 세리아 입자를 사용하여 CMP를 하려면 먼저 입자의 크기를 균일하게 해주어야 한다. 세리아 CMP는 세리아 입자의 크기를 두가지로 구분하여 사용한다. 직경이 170nm인 입자와 직경이 350nm인 입자 두가지 중에서 직경이 350nm인 입자는중성용액에 혼합하여 사용하고, 직경이 170nm인 입자는 강산성 용액에 혼합하여 사용하며, 용액중에서 세리아 입자가 차지하는 질량비는 양쪽 모두 3%이다.CMP used in the present invention is a method of using oxide particles such as ceria (CeO 2 ). CMP using ceria particles requires uniform particle size. Ceria CMP uses two sizes of ceria particles. Of the two particles, 170 nm in diameter and 350 nm in diameter, 350 nm in diameter are mixed in neutral solution, 170 nm in diameter is mixed in strong acid solution, and the mass ratio of ceria particles in both All are 3%.
본 발명에서는 직경이 350nm인 세리아 입자를 중성용액에 혼합하여 폴리싱을 하며, 이를 위해, 우선, 증착된 박막 트랜지스터에 보호막을 형성하고, 유리기판을 뒤집어서 유리기판에 세리아 입자가 포함된 용액을 부은 다음, 디스크를 위치시킨다. 디스크는 약 28rpm(revolution per minute)의 속도로 서서히 회전하며, 디스크가 회전할때 용액에 포함된 세리아 입자들은 유리기판을 서서히 제거하며, 대체적으로 유리의 제거속도는 약 4000Å/min이다.In the present invention, the ceria particles having a diameter of 350 nm are mixed with a neutral solution for polishing. To this end, first, a protective film is formed on the deposited thin film transistor, the glass substrate is turned over, and a solution containing ceria particles is poured on the glass substrate. , Position the disk. The disk rotates slowly at a speed of about 28 rpm (revolution per minute), and when the disk rotates, the ceria particles in the solution slowly remove the glass substrate, and generally the removal rate of the glass is about 4000 mW / min.
본 발명에서 사용한 예에서는 유리 기판을 제거하는 방법을 이용했지만, 유리 외에 다른 기판의 경우에도, 실리콘을 증착할 수 있고, 불산과 같은 화학물에 용해되거나 폴리싱과 같은 방법으로 기판을 제거할 수 있는 물질이라면, 본 발명에서 사용한 기술을 응용하여 기판과 박막 트랜지스터를 분리할 수 있다.In the example used in the present invention, a method of removing a glass substrate is used, but in the case of substrates other than glass, silicon can be deposited, dissolved in a chemical such as hydrofluoric acid, or the substrate can be removed by a method such as polishing. If the material, the technique used in the present invention can be applied to separate the substrate and the thin film transistor.
불산이나 폴리싱을 통해 유리 기판의 제거가 마무리되면, 에칭을 하여 보호층을 제거해야하며(S4 과정), 그 결과로서 도 5와 같이 남겨진 박막 트랜지스터는 다른 기판, 즉, 플라스틱과 같은 기능성 기판위로 이송하여(S5 과정) 접합(bonding)을 해야한다. 이때, 플라스틱(20) 기판의 두께는 사용자가 임의로 선택할 수 있으며, 아주 얇은 플라스틱기판을 사용하거나, 플라스틱 필름을 기판으로 사용할 수도 있다.When removal of the glass substrate is finished by hydrofluoric acid or polishing, the protective layer must be removed by etching (step S4), and as a result, the thin film transistor left as shown in FIG. 5 is transferred onto another substrate, that is, a functional substrate such as plastic. (S5 process) to be bonded (bonding). In this case, the thickness of the plastic 20 substrate may be arbitrarily selected by the user, and a very thin plastic substrate may be used, or a plastic film may be used as the substrate.
접합을 하는 방법으로는 접착제나 유기용제, 또는 접착 테이프를 사용하여 플라스틱 기판과 박막 트랜지스터부분을 접합할 수 있으며, 이 외에도 열을 가하여집적 플라스틱 기판과 박막 트랜지스터부분을 접합할 수 있다.As a bonding method, an adhesive, an organic solvent, or an adhesive tape may be used to bond the plastic substrate and the thin film transistor portion. In addition, heat may be applied to bond the integrated plastic substrate and the thin film transistor portion.
접착제로 플라스틱 기판과 박막 트랜지스터부분을 접합할 때에는, VersaChem®에서 생산하는 Super Glue를 사용하면 된다. Super Glue는 투명하고 반응성이 적어서 사용하기 쉬우며, Super Glue 외에도 투명하면서 반응성이 적은 접착제를 사용하면 된다.When bonding the plastic substrate to the thin film transistor with an adhesive, you can use Super Glue from VersaChem ® . Super Glue is easy to use because of its transparency and low reactivity. In addition to Super Glue, a transparent and less reactive adhesive can be used.
접착 테이프를 사용하여 플라스틱 기판과 박막 트랜지스터부분을 접합할 때에는, Adhesives Research, Inc.에서 생산하는 ARclad®7761을 사용하며, ARclad®7761은 양면 모두 접착제가 붙어 있어서 플라스틱 기판과 박막 트랜지스터를 접합시켜주며, 열에 대한 저항이 있어 사용온도범위는 29℃ ∼ 177℃이고, 두께는 0.08mm이다. 이 접합 테이프는 투명하기 때문에 반사형 LCD나 투과형 LCD에 모두 적당하다.When bonding the plastic substrate and the thin film transistor part using adhesive tape, ARclad ® 7761 manufactured by Adhesives Research, Inc. is used, and the ARclad ® 7761 has an adhesive on both sides to bond the plastic substrate and the thin film transistor. It has a resistance to heat, so the operating temperature range is 29 ℃ ~ 177 ℃ and the thickness is 0.08mm. This bonding tape is transparent and suitable for both reflective and transmissive LCDs.
열을 가하는 일반적인 방법으로는 반응로 안에 플라스틱 기판과 박막 트랜지스터를 넣고 반응로를 가열하는 방법이 있으며, 이 방법외에 초음파나 적외선을 사용하여 가열할 수도 있다. 또한, 접착시 기포발생이나 비틀림을 방지하기 위해, 투명한 액체를 플라스틱 기판과 박막 트랜지스터에 주입한 뒤, 열을 가하여 두 기판을 접합함으로써 접합시 발생하는 오차를 줄일 수 있다.(S6 과정)As a general method of applying heat, a plastic substrate and a thin film transistor are placed in a reactor to heat the reactor, and in addition to this method, ultrasonic or infrared rays may be used to heat the reactor. In addition, in order to prevent bubbles or twisting during the bonding, a transparent liquid may be injected into the plastic substrate and the thin film transistor, and then the two substrates may be bonded by applying heat to reduce an error occurring during bonding.
플라스틱 기판(20)과 박막 트랜지스터를 접합하면 도 6과 같이 된다. 접합이 되면, 박막 트랜지스터 위에 액정층을 주입하기 위해 배향막을 증착하고 액정을 주입한 뒤, 컬러필터를 증착하여 액정 디스플레이 장치를 제작하면 된다. 이 외에도 사용하고자 하는 소자의 디자인에 따라 플라스틱 기판 위의 박막 트랜지스터 층위에 소자를 제작하여 사용할 수 있다.(S7 과정)When the plastic substrate 20 and the thin film transistor are bonded together, as shown in FIG. 6. After bonding, an alignment layer is deposited to inject a liquid crystal layer onto the thin film transistor, the liquid crystal is injected, and then a color filter is deposited to fabricate a liquid crystal display device. In addition, depending on the design of the device to be used, the device can be manufactured and used on the thin film transistor layer on the plastic substrate (S7 process).
이상의 실시예에서는 유리기판에서 박막 트랜지스터를 형성한 후, 플라스틱 기판 위로 이송하여 접합한 후 액정 디스플레이 장치를 제작하는 것을 예로 하고 있으나, 유리기판위에서 박막 트랜지스터 액정 디스플레이장치를 형성한 후 유리기판을 제거하여 플라스틱 위로 이송하여 접합하는 방법도 변형 예에 속한다고 할 수 있다.In the above embodiment, a thin film transistor is formed on a glass substrate, and then the liquid crystal display device is fabricated after being transported and bonded to a plastic substrate. However, the glass substrate is removed by forming a thin film transistor liquid crystal display device on the glass substrate. The method of transporting and joining plastics can also be said to be a variant.
플라스틱 기판 위에서 제작한 박막 소자는 여러 제품에 부착할 수 있으며, 충격에 강하여 깨지지 않고, 무게가 가볍기 때문에 이동기기(mobile device)에 부착하여 사용하기 알맞고, 두께를 아주 얇게 할 수 있기 때문에 쉽게 전자기기에 부착하여 사용할 수 있다.Thin-film devices fabricated on plastic substrates can be attached to many products, are resistant to shocks, do not break, and are light in weight, making them suitable for use in mobile devices. Can be attached to and used.
본 발명은 유리기판 위에서 제작한 박막 소자를 다른 기판위로 이송하는 방법을 사용하였다. 그러나, 본 발명에서 사용한 전이막 기술을 이용하면, 유리 기판이 아닌 또 다른 기판이나 심지어 불투명한 기판 위에서 박막 소자를 제작한 뒤, 플라스틱 기판과 같은 투명한 기판위로 이송하는 것이 가능하기 때문에 향후, 전이막 기술을 활용한 제품 제조방법에 응용하여 사용할 수 있어서, 박막 소자 제작의 첨단화 및 다양화에 이바지할 수 있을 것으로 예상된다.The present invention used a method for transferring a thin film device fabricated on a glass substrate onto another substrate. However, using the transition film technique used in the present invention, it is possible to fabricate a thin film element on another substrate or even an opaque substrate, which is not a glass substrate, and then transfer it onto a transparent substrate such as a plastic substrate. It can be applied to the production method using the technology, it is expected to contribute to the advancement and diversification of thin film device fabrication.
이상에서 설명한 바와 같이, 본 발명은 가볍고 충격에 강하며 변형이 되는액정 디스플레이 장치로서, 이동통신기기(mobile telecommunication device)를 비롯한 이동기기(mobile device)에 부착할 수 있고, 충격에 강하기 때문에 액정 디스플레이의 수명을 연장할 수 있으며, 액정 디스플레이를 포함한 제품의 제작이 용이하게 된다. 또한, 본 발명에서 사용한 전이막 기술을 다른 소자의 제작에 사용할 경우, 다양한 기능을 지닌 기능성 소자의 제작이 가능할 뿐만 아니라, 박막 소자의 제조시 유리 기판이 아닌 다른 기판, 심지어 불투명한 기판 위에서 제작한 박막 소자를 투명한 플라스틱 기판이나 다른 기판으로 이송하여 제품으로 제작하는 것을 가능하게 해준다.As described above, the present invention is a liquid crystal display device that is light, impact-resistant, and deformable, and can be attached to a mobile device including a mobile telecommunication device, and is strong in impact, and thus, liquid crystal display. It can extend the service life of the product and facilitates the manufacture of products including liquid crystal displays. In addition, when the transition film technology used in the present invention is used for the fabrication of other devices, it is possible not only to manufacture functional devices having various functions, but also to fabricate on substrates other than glass substrates, even opaque substrates, in the manufacture of thin film devices. The thin film device can be transferred to a transparent plastic substrate or another substrate to be manufactured into a product.
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Cited By (2)
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| US8034206B2 (en) | 2008-04-29 | 2011-10-11 | Samsung Electronics Co., Ltd. | Method of fabricating flexible display device |
| US8182633B2 (en) | 2008-04-29 | 2012-05-22 | Samsung Electronics Co., Ltd. | Method of fabricating a flexible display device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09116158A (en) * | 1995-10-17 | 1997-05-02 | Hitachi Ltd | Light weight substrate thin film semiconductor device and liquid crystal display device |
| JPH10270711A (en) * | 1997-03-25 | 1998-10-09 | Internatl Business Mach Corp <Ibm> | Thin film transistor |
| KR20010002981A (en) * | 1999-06-19 | 2001-01-15 | 구본준 | A method of manufacturing an amorphous silicon hydride thin film transistor at a low temperature |
| KR20020032951A (en) * | 2000-10-28 | 2002-05-04 | 구본준, 론 위라하디락사 | An array substrate for liquid crystal display device and method of manufacturing there of |
-
2001
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09116158A (en) * | 1995-10-17 | 1997-05-02 | Hitachi Ltd | Light weight substrate thin film semiconductor device and liquid crystal display device |
| JPH10270711A (en) * | 1997-03-25 | 1998-10-09 | Internatl Business Mach Corp <Ibm> | Thin film transistor |
| KR20010002981A (en) * | 1999-06-19 | 2001-01-15 | 구본준 | A method of manufacturing an amorphous silicon hydride thin film transistor at a low temperature |
| KR20020032951A (en) * | 2000-10-28 | 2002-05-04 | 구본준, 론 위라하디락사 | An array substrate for liquid crystal display device and method of manufacturing there of |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8034206B2 (en) | 2008-04-29 | 2011-10-11 | Samsung Electronics Co., Ltd. | Method of fabricating flexible display device |
| US8182633B2 (en) | 2008-04-29 | 2012-05-22 | Samsung Electronics Co., Ltd. | Method of fabricating a flexible display device |
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