KR20040039693A - Method for fabricating liquid crystal display - Google Patents
Method for fabricating liquid crystal display Download PDFInfo
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- KR20040039693A KR20040039693A KR1020020067838A KR20020067838A KR20040039693A KR 20040039693 A KR20040039693 A KR 20040039693A KR 1020020067838 A KR1020020067838 A KR 1020020067838A KR 20020067838 A KR20020067838 A KR 20020067838A KR 20040039693 A KR20040039693 A KR 20040039693A
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- South Korea
- Prior art keywords
- liquid crystal
- crystal display
- glass substrate
- thin film
- flexible material
- Prior art date
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000011521 glass Substances 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims abstract description 23
- 239000010409 thin film Substances 0.000 claims description 28
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 238000005137 deposition process Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 abstract 6
- 238000009413 insulation Methods 0.000 abstract 1
- 239000011241 protective layer Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920000307 polymer substrate Polymers 0.000 description 2
- 239000004695 Polyether sulfone Substances 0.000 description 1
- -1 Polyethylene terephthalate Polymers 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133302—Rigid substrates, e.g. inorganic substrates
Abstract
Description
본 발명은 액정디스플레이의 제조방법에 관한 것으로, 보다 상세하게는 유리기판과 유연성재질의 박막을 함께 부착하여 형성한 액정디스플레이의 제조방법에 관한 것이다.The present invention relates to a method for manufacturing a liquid crystal display, and more particularly, to a method for manufacturing a liquid crystal display formed by attaching a glass substrate and a thin film of a flexible material together.
일반적으로, 액정디스플레이는 차세대 표시장치로서 노트북 및 모니터 시장에서 높은 시장을 점유하고 있으며, 그 기술도 TN-액정디스플레이에서 STN-액정디스플레이, MIM-액정디스플레이, 박막트랜지스터 액정디스플레이로 발전하였다. 더불어 액정디스플레이의 표시성능도 현저하게 향상되었다.In general, the liquid crystal display occupies a high market in the notebook and monitor market as the next generation display device, and the technology has also evolved from the TN liquid crystal display to the STN liquid crystal display, the MIM liquid crystal display, and the thin film transistor liquid crystal display. In addition, the display performance of the liquid crystal display is significantly improved.
그러나, 종래에 유리기판을 이용하여 제작된 박막트랜지스터 액정디스플레이는 외부충격에 의해 깨지기 쉬우며, 두껍고 무겁다는 단점이 있었다.However, the thin film transistor liquid crystal display manufactured by using a glass substrate in the related art has a disadvantage in that it is easy to be broken by an external impact, and is thick and heavy.
이러한 문제점을 해결코자 또 다른 종래의 액정디스플레이는, 도 1에 도시된 바와 같이 유연성재질의 기판(5)을 이용하였다. 이러한 종래의 유연성재질의 기판(예 : 폴리머기판)에 이용되는 재료를 살펴보면 다음과 같다.In order to solve this problem, another conventional liquid crystal display uses a flexible substrate 5 as shown in FIG. 1. Looking at the material used for such a conventional flexible substrate (eg, a polymer substrate) as follows.
그러나, 도 1에 도시된 바와 같이, 유연성재질의 기판(5)은 재질의 표면이거칠고 쉽게 휘어지기 때문에 진공 척(chuck)에 의한 증착공정시 어려움이 있었다.However, as shown in FIG. 1, the flexible substrate 5 has difficulty in the deposition process by a vacuum chuck because the surface of the material is rough and easily bent.
도 2a 내지 도 2c는 종래기술에 따른 유리기판을 이용한 액정디스플레이의 제조방법을 도시한 공정별 단면도이다.2A to 2C are cross-sectional views illustrating a method of manufacturing a liquid crystal display using a glass substrate according to the prior art.
먼저, 도 2a에 도시된 바와 같이, 얇은 유리기판(10) 위에 식각정지막(20)을 형성한다. 이때, 상기 유리기판(10)은 얇을수록 바람직하다.First, as shown in FIG. 2A, the etch stop layer 20 is formed on the thin glass substrate 10. In this case, the thinner the glass substrate 10 is, the better.
이어서, 도 2b에 도시된 바와 같이, 종래의 방법과 동일하게 박막트랜지스터를 형성하는데, 먼저 상기 식각정지막(20) 상부에 게이트(30)를 형성한 후, 상기 게이트(30)를 포함한 상기 식각정지막(20) 상부에 게이트절연층(40)을 형성한다.Subsequently, as shown in FIG. 2B, a thin film transistor is formed in the same manner as in the conventional method. First, a gate 30 is formed on the etch stop layer 20, and the etching including the gate 30 is performed. The gate insulating layer 40 is formed on the stop layer 20.
그 다음, 상기 결과물의 상부에 액티브영역의 패턴을 형성한 후 상기 액티브영역의 패턴대로 형성된 소오스/드레인 영역(50)을 형성한다Next, a pattern of an active region is formed on the resultant, and then a source / drain region 50 formed according to the pattern of the active region is formed.
이어서, 상기 소오스/드레인영역(50)을 마스크로 이용하여 채널층(60)을 형성하여 박막트랜지스터를 완성한다.Subsequently, the channel layer 60 is formed using the source / drain region 50 as a mask to complete the thin film transistor.
그 다음, 상기 유리기판(10)을 포함한 박막트랜지스터를 HF용액에 담궈 유리기판(10)만을 식각하여 제거한다.Then, the thin film transistor including the glass substrate 10 is immersed in the HF solution to remove only the glass substrate 10 by etching.
이어서, 도 2c에 도시된 바와 같이, 상기 유리기판(10)이 제거된 위치인 식각정지막(20) 아래에 유연성재질의 기판(70)을 접착제(A)를 이용하여 부착한다.Subsequently, as shown in FIG. 2C, the flexible substrate 70 is attached to the bottom of the etch stop layer 20 at the position where the glass substrate 10 is removed using the adhesive A. FIG.
그러나, 이러한 유리기판을 이용한 액정디스플레이의 제조방법에서는 유리기판의 식각이 어려우며, 또한 유연성재질의 기판을 다시 부착해야 하기 때문에 공정시간이 길어진다는 문제점이 있었다.However, in the manufacturing method of the liquid crystal display using the glass substrate, there is a problem that the etching of the glass substrate is difficult and the process time is long because the substrate of the flexible material needs to be attached again.
따라서, 본발명은 상기 종래기술의 제반문제점을 해결하기 위하여 안출한 것으로서, 유리기판과 유연성재질의 박막을 함께 부착하여 형성함으로써 진공 척에 의한 증착공정을 원활하게 이용할 수 있고, 또한 유리기판 위에 유연성재질의 박막을 형성한 후에 박막트랜지스터를 형성하여 액정디스플레이를 완성하므로 유연성재질의 기판을 추가로 부착할 필요가 없는 액정디스플레이의 제조방법을 제공함에 그 목적이 있다.Accordingly, the present invention has been made in order to solve the above problems of the prior art, by attaching a glass substrate and a thin film of a flexible material together to form a deposition process by a vacuum chuck smoothly, and also flexible on the glass substrate Since the liquid crystal display is completed by forming a thin film transistor after forming a thin film of a material, an object of the present invention is to provide a method of manufacturing a liquid crystal display without additionally attaching a substrate of a flexible material.
도 1은 종래기술에 따른 액정디스플레이의 제조방법을 도시한 최종 단면도 및 그 일부 확대도.1 is a final cross-sectional view showing a method of manufacturing a liquid crystal display according to the prior art and a partially enlarged view thereof.
도 2a 내지 도 2c는 종래기술에 따른 또 다른 액정디스플레이의 제조방법을 도시한 공정별 단면도.Figure 2a to 2c is a cross-sectional view showing a process for producing another liquid crystal display according to the prior art.
도 3a 내지 도 3c는 본 발명에 따른 액정디스플레이를 도시한 단면도.3a to 3c are cross-sectional views showing the liquid crystal display according to the present invention.
(도면의 주요부분에 대한 부호설명)(Code description of main parts of drawing)
100 : 유리기판200 : 유연성재질의 박막100: glass substrate 200: thin film of a flexible material
300 : 게이트400 : 게이트절연층300: gate 400: gate insulating layer
500 : 반도체층 패턴600 : 오믹층 패턴500: semiconductor layer pattern 600: ohmic layer pattern
800 : 소오스/드레인전극850 : 보호막800 source / drain electrodes 850 protective film
900 : 스토리지전극950 : 화소전극900 storage electrode 950 pixel electrode
상기 목적을 달성하기 위한 본 발명은, 유리기판을 제공하는 단계; 상기 유리기판상에 유연성재질의 박막을 형성하는 단계; 상기 유연성재질의 박막상에 게이트 및 게이트절연층과 함께 상기 결과물의 상부에 액티브영역의 패턴을 형성한 후 상기 액티브영역의 패턴 양측에 소오스/드레인 영역을 형성하여 박막트랜지스터를 형성하는 단계; 및 상기 유리기판으로부터 상기 유연성재질의 박막을 제거하는 단계를 포함하여 구성됨을 특징으로 한다.The present invention for achieving the above object, providing a glass substrate; Forming a thin film of a flexible material on the glass substrate; Forming a thin film transistor by forming a pattern of an active region on the resultant layer along with a gate and a gate insulating layer on the flexible thin film, and then forming source / drain regions on both sides of the pattern of the active region; And removing the thin film of the flexible material from the glass substrate.
(실시예)(Example)
이하, 첨부된 도면에 의거하여 본 발명의 바람직한 실시예를 보다 상세하게 설명하도록 한다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도 3a 내지 도 3c는 본 발명에 따른 액정디스플레이의 제조방법을 도시한 공정별 단면도이다.3A to 3C are cross-sectional views of processes illustrating a method of manufacturing a liquid crystal display according to the present invention.
먼저, 도 3a에 도시된 바와 같이, 진공 척에 의한 증착공정을 진행하기 위해 유리기판(100)을 최하단부에 제공한 후, 상기 유리기판(100)상에 유연성재질의 박막(200)을 형성한다. 이때, 상기 유리기판(100)의 두께는 그 제한이 없다.First, as shown in FIG. 3A, a glass substrate 100 is provided at the lowermost end in order to proceed with a deposition process by a vacuum chuck, and then a thin film 200 of flexible material is formed on the glass substrate 100. . At this time, the thickness of the glass substrate 100 is not limited.
그 다음, 도 3b에 도시된 바와 같이, 종래의 방법과 동일하게 박막트랜지스터를 형성하여 액정디스플레이를 완성한다.3B, a thin film transistor is formed in the same manner as the conventional method to complete the liquid crystal display.
이를 간략히 설명하면, 먼저 상기 유연성재질의 박막(200) 상부에 게이트(300)를 형성한다.Briefly describing this, first, the gate 300 is formed on the thin film 200 of the flexible material.
그 다음, 상기 게이트(300)를 포함한 상기 유연성재질의 박막(200) 상부에 게이트절연층(400)을 형성한다.Next, the gate insulating layer 400 is formed on the thin film 200 of the flexible material including the gate 300.
이어서, 상기 결과물의 상부에 반도체층과 오믹층을 형성한 후 상기 반도체층을 선택적으로 패터닝하여 채널영역을 형성하는 반도체층 패턴(500)과 오믹층 패턴(600)을 형성한다.Subsequently, a semiconductor layer and an ohmic layer are formed on the resultant, and then the semiconductor layer is selectively patterned to form a semiconductor layer pattern 500 and an ohmic layer pattern 600.
그 다음, 소오스/드레인전극(800), 보호막(850), 스토리지전극(900) 및 화소전극(950)을 형성하여 액정디스플레이를 완성한다.Next, the source / drain electrode 800, the passivation layer 850, the storage electrode 900, and the pixel electrode 950 are formed to complete the liquid crystal display.
최종적으로, 도 3c에 도시된 바와 같이 상기 유연성재질의 박막(200)을 잡고 손쉽게 상기 유리기판(100)과 분리시킴으로써, 상기 유연성재질의 박막(200)은 남겨진채 상기 유리기판(100)은 제거된다.Finally, by holding the thin film 200 of the flexible material and easily separated from the glass substrate 100 as shown in Figure 3c, the glass substrate 100 is removed while leaving the thin film 200 of the flexible material do.
상술한 바와 같이 본 발명에서는 액정디스플레이를 예로 들어 설명하였으나, 유기 방출다이오드(Organic Light Emitting Diode : OLED)에도 적용될 수 있음을알 수 있다. 이때 유기방출다이오드에서는, 2장의 유리기판을 요구하는 액정디스플레이 경우와는 달리 1장의 유리기판만이 요구된다.As described above, the present invention has been described using a liquid crystal display as an example, but it can be seen that the present invention can be applied to an organic light emitting diode (OLED). At this time, in the organic light emitting diode, only one glass substrate is required, unlike in the case of a liquid crystal display which requires two glass substrates.
상술한 바와 같이, 본 발명은 유리기판과 유연성재질의 박막을 동시에 이용하여 진공 척에 의한 증착공정을 원활하게 이용할 수 있으므로 그 제조공정이 용이할 뿐만 아니라 생산성 향상을 가져오는 효과가 있다.As described above, the present invention can use the deposition process by the vacuum chuck smoothly using the glass substrate and the thin film of the flexible material at the same time, the manufacturing process is not only easy but also has the effect of improving productivity.
또한 유리기판 위에 유연성재질의 박막을 형성한 후에 박막트랜지스터를 형성하여 액정디스플레이를 완성하므로 유연성재질의 기판을 추가로 부착할 필요가 없다는 효과가 있다.In addition, since a thin film transistor is formed on the glass substrate to form a thin film transistor to complete the liquid crystal display, there is no effect of additionally attaching the flexible substrate.
한편, 본 발명은 상술한 특정의 바람직한 실시예에 한정되지 아니하며, 청구범위에서 청구하는 본 발명의 요지를 벗어남이 없이 당해 발명이 속하는 분야에서 통상의 지식을 가진 자라면 누구든지 다양한 변경 실시가 가능할 것이다.On the other hand, the present invention is not limited to the above-described specific preferred embodiments, and various changes can be made by those skilled in the art without departing from the gist of the invention claimed in the claims. will be.
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0764038A (en) * | 1993-08-31 | 1995-03-10 | Matsushita Electric Ind Co Ltd | Production of flexible liquid crystal display panel |
JP2001060697A (en) * | 1995-02-16 | 2001-03-06 | Semiconductor Energy Lab Co Ltd | Thin-film integrated circuit |
KR20020032951A (en) * | 2000-10-28 | 2002-05-04 | 구본준, 론 위라하디락사 | An array substrate for liquid crystal display device and method of manufacturing there of |
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2002
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0764038A (en) * | 1993-08-31 | 1995-03-10 | Matsushita Electric Ind Co Ltd | Production of flexible liquid crystal display panel |
JP2001060697A (en) * | 1995-02-16 | 2001-03-06 | Semiconductor Energy Lab Co Ltd | Thin-film integrated circuit |
KR20020032951A (en) * | 2000-10-28 | 2002-05-04 | 구본준, 론 위라하디락사 | An array substrate for liquid crystal display device and method of manufacturing there of |
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