KR100655944B1 - 신뢰성을 개선하기 위하여 ｅｅｐｒｏｍｓ을 소거하는동안 감소된 일정한 전계를 제공하는 방법 - Google Patents

신뢰성을 개선하기 위하여 ｅｅｐｒｏｍｓ을 소거하는동안 감소된 일정한 전계를 제공하는 방법 Download PDF

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Publication number
KR100655944B1
KR100655944B1 KR1020027007781A KR20027007781A KR100655944B1 KR 100655944 B1 KR100655944 B1 KR 100655944B1 KR 1020027007781 A KR1020027007781 A KR 1020027007781A KR 20027007781 A KR20027007781 A KR 20027007781A KR 100655944 B1 KR100655944 B1 KR 100655944B1
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KR
South Korea
Prior art keywords
gate
voltage
source
cell
erase
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Application number
KR1020027007781A
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English (en)
Korean (ko)
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KR20030011066A (ko
Inventor
클리브랜드리
Original Assignee
어드밴스드 마이크로 디바이시즈, 인코포레이티드
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Publication date
Priority claimed from US09/490,351 external-priority patent/US6160740A/en
Application filed by 어드밴스드 마이크로 디바이시즈, 인코포레이티드 filed Critical 어드밴스드 마이크로 디바이시즈, 인코포레이티드
Publication of KR20030011066A publication Critical patent/KR20030011066A/ko
Application granted granted Critical
Publication of KR100655944B1 publication Critical patent/KR100655944B1/ko

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits

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  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
KR1020027007781A 1999-12-17 2000-12-05 신뢰성을 개선하기 위하여 ｅｅｐｒｏｍｓ을 소거하는동안 감소된 일정한 전계를 제공하는 방법 KR100655944B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US17232799P 1999-12-17 1999-12-17
US60/172,327 1999-12-17
US09/490,351 US6160740A (en) 1999-12-17 2000-01-24 Method to provide a reduced constant E-field during erase of EEPROMs for reliability improvement
US09/490,351 2000-01-24
PCT/US2000/033044 WO2001045113A1 (en) 1999-12-17 2000-12-05 Method to provide a reduced constant e-field during erase of eeproms for reliability improvement

Publications (2)

Publication Number Publication Date
KR20030011066A KR20030011066A (ko) 2003-02-06
KR100655944B1 true KR100655944B1 (ko) 2006-12-11

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020027007781A KR100655944B1 (ko) 1999-12-17 2000-12-05 신뢰성을 개선하기 위하여 ｅｅｐｒｏｍｓ을 소거하는동안 감소된 일정한 전계를 제공하는 방법

Country Status (5)

Country Link
EP (1) EP1256117A1 (ja)
JP (1) JP4641697B2 (ja)
KR (1) KR100655944B1 (ja)
CN (1) CN1411602A (ja)
WO (1) WO2001045113A1 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7450433B2 (en) 2004-12-29 2008-11-11 Sandisk Corporation Word line compensation in non-volatile memory erase operations
ATE457518T1 (de) * 2005-03-31 2010-02-15 Sandisk Corp Löschen eines nichtflüchtigen speichers unter verwendung veränderlicher wortleitungsbedingungen zum ausgleichen langsamer schreibender speicherzellen
KR100653718B1 (ko) * 2005-08-09 2006-12-05 삼성전자주식회사 반도체소자의 소거 방법들
US8344475B2 (en) 2006-11-29 2013-01-01 Rambus Inc. Integrated circuit heating to effect in-situ annealing
US11244727B2 (en) 2006-11-29 2022-02-08 Rambus Inc. Dynamic memory rank configuration
WO2008067494A1 (en) * 2006-11-29 2008-06-05 Rambus Inc. Integrated circuit with built-in heating circuitry to reverse operational degeneration
KR101972167B1 (ko) * 2012-05-29 2019-04-24 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그것의 동작 방법
CN103065684A (zh) * 2012-12-27 2013-04-24 清华大学 一种存储单元的擦除方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0831963A (ja) * 1994-07-19 1996-02-02 Nippon Steel Corp 不揮発性半導体記憶装置
US5485423A (en) * 1994-10-11 1996-01-16 Advanced Micro Devices, Inc. Method for eliminating of cycling-induced electron trapping in the tunneling oxide of 5 volt only flash EEPROMS
JPH10261292A (ja) * 1997-03-18 1998-09-29 Nec Corp 不揮発性半導体記憶装置の消去方法
JP3915177B2 (ja) * 1997-06-18 2007-05-16 ソニー株式会社 不揮発性半導体記憶装置
US5838618A (en) * 1997-09-11 1998-11-17 Taiwan Semiconductor Manufacturing Company Ltd. Bi-modal erase method for eliminating cycling-induced flash EEPROM cell write/erase threshold closure
JP3324691B2 (ja) * 1998-04-03 2002-09-17 日本電気株式会社 不揮発性半導体記憶装置および不揮発性半導体記憶装置のデータ書き換え方法
US5978277A (en) * 1998-04-06 1999-11-02 Aplus Flash Technology, Inc. Bias condition and X-decoder circuit of flash memory array

Also Published As

Publication number Publication date
KR20030011066A (ko) 2003-02-06
CN1411602A (zh) 2003-04-16
EP1256117A1 (en) 2002-11-13
JP4641697B2 (ja) 2011-03-02
WO2001045113A1 (en) 2001-06-21
JP2003517176A (ja) 2003-05-20

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