KR100650603B1 - 응축방울 검지센서 - Google Patents
응축방울 검지센서 Download PDFInfo
- Publication number
- KR100650603B1 KR100650603B1 KR1020050096076A KR20050096076A KR100650603B1 KR 100650603 B1 KR100650603 B1 KR 100650603B1 KR 1020050096076 A KR1020050096076 A KR 1020050096076A KR 20050096076 A KR20050096076 A KR 20050096076A KR 100650603 B1 KR100650603 B1 KR 100650603B1
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- wells
- inclined surfaces
- detection sensor
- silicon substrate
- Prior art date
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- 238000009833 condensation Methods 0.000 title claims description 60
- 230000005494 condensation Effects 0.000 title claims description 60
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title abstract description 13
- 239000010409 thin film Substances 0.000 claims abstract description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
- 239000010703 silicon Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 25
- 239000010408 film Substances 0.000 claims abstract description 24
- 238000005530 etching Methods 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 238000001514 detection method Methods 0.000 claims description 50
- 230000002209 hydrophobic effect Effects 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005661 hydrophobic surface Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
- G01N27/223—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity
- G01N27/225—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity by using hygroscopic materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/14—Investigating or analyzing materials by the use of thermal means by using distillation, extraction, sublimation, condensation, freezing, or crystallisation
- G01N25/142—Investigating or analyzing materials by the use of thermal means by using distillation, extraction, sublimation, condensation, freezing, or crystallisation by condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00274—Sequential or parallel reactions; Apparatus and devices for combinatorial chemistry or for making arrays; Chemical library technology
- B01J2219/00583—Features relative to the processes being carried out
- B01J2219/00603—Making arrays on substantially continuous surfaces
- B01J2219/00605—Making arrays on substantially continuous surfaces the compounds being directly bound or immobilised to solid supports
- B01J2219/00614—Delimitation of the attachment areas
- B01J2219/00617—Delimitation of the attachment areas by chemical means
- B01J2219/00619—Delimitation of the attachment areas by chemical means using hydrophilic or hydrophobic regions
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- Pathology (AREA)
- Immunology (AREA)
- General Health & Medical Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
Description
Claims (5)
- 실리콘 기판의 중앙에 경사식각에 의해 우물(well)이 형성되고, 상기 실리콘 기판의 상면과 상기 우물의 경사면에 실리콘 산화막이 형성되며, 상기 우물의 경사면중 서로 대응하는 경사면과 이에 연이은 상기 실리콘 산화막 일부의 상면에 박막 전극이 형성되어 이루어진 것을 특징으로 하는 응축방울 검지센서.
- 제 1 항에 있어서,상기 박막형 전극은 그 두께가 0.3 ~ 0.6㎛인 것을 특징으로 하는 응축방울 검지센서.
- 제 1 항에 있어서,상기 실리콘 산화막의 상면에 소수성 박막이 형성되는 것을 특징으로 하는 응축방울 검지센서.
- 실리콘 기판에 경사식각에 의해 다수의 우물이 배열 형태로 형성되고, 상기 실리콘 기판의 상면과 상기 다수의 우물의 경사면에 실리콘 산화막이 형성되며, 상기 다수의 우물의 경사면중 서로 대응하는 경사면에 박막형 전극이 각각 형성되고, 상기 박막형 전극이 병렬로 연결되도록 어레이 박막형 금속이 형성되며, 상기 어레이 박막형 금속의 양단에 외부인출 전극이 형성되어 이루어진 것을 특징으로 하는 응축방울 검지센서.
- 실리콘 기판에 경사식각에 의해 다수의 우물이 배열 형태로 형성되고, 상기 실리콘 기판의 상면과 상기 다수의 우물의 경사면에 실리콘 산화막이 형성되며, 상기 다수의 우물의 경사면중 서로 대응하는 경사면에 박막형 전극이 각각 형성되고, 상기 박막형 전극이 직렬로 연결되도록 어레이 박막형 금속이 형성되며, 상기 어레이 박막형 금속의 양단에 외부인출 전극이 형성되어 이루어진 것을 특징으로 하는 응축방울 검지센서.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050096076A KR100650603B1 (ko) | 2005-10-12 | 2005-10-12 | 응축방울 검지센서 |
Applications Claiming Priority (1)
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---|---|---|---|
KR1020050096076A KR100650603B1 (ko) | 2005-10-12 | 2005-10-12 | 응축방울 검지센서 |
Publications (1)
Publication Number | Publication Date |
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KR100650603B1 true KR100650603B1 (ko) | 2006-11-29 |
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Family Applications (1)
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KR1020050096076A KR100650603B1 (ko) | 2005-10-12 | 2005-10-12 | 응축방울 검지센서 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111413376A (zh) * | 2020-04-10 | 2020-07-14 | 燕山大学 | 同面阵列电容传感器成像方法 |
WO2023042940A1 (ko) * | 2021-09-17 | 2023-03-23 | 엘지전자 주식회사 | 결로센서를 구비한 전자장치 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09172147A (ja) * | 1995-11-28 | 1997-06-30 | Lg Semicon Co Ltd | 半導体素子のキャパシタ及びその製造方法 |
KR20030014532A (ko) * | 2001-08-11 | 2003-02-19 | 재단법인 포항산업과학연구원 | 마이크로 수소이온농도 센서의 전극형성 방법 |
JP2003322630A (ja) * | 2002-05-01 | 2003-11-14 | Seiko Epson Corp | バイオセンサ、バイオセンシングシステム、及びバイオセンシング方法 |
-
2005
- 2005-10-12 KR KR1020050096076A patent/KR100650603B1/ko not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09172147A (ja) * | 1995-11-28 | 1997-06-30 | Lg Semicon Co Ltd | 半導体素子のキャパシタ及びその製造方法 |
KR20030014532A (ko) * | 2001-08-11 | 2003-02-19 | 재단법인 포항산업과학연구원 | 마이크로 수소이온농도 센서의 전극형성 방법 |
JP2003322630A (ja) * | 2002-05-01 | 2003-11-14 | Seiko Epson Corp | バイオセンサ、バイオセンシングシステム、及びバイオセンシング方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111413376A (zh) * | 2020-04-10 | 2020-07-14 | 燕山大学 | 同面阵列电容传感器成像方法 |
CN111413376B (zh) * | 2020-04-10 | 2021-06-22 | 燕山大学 | 同面阵列电容传感器成像方法 |
WO2023042940A1 (ko) * | 2021-09-17 | 2023-03-23 | 엘지전자 주식회사 | 결로센서를 구비한 전자장치 |
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