KR100637568B1 - 화학적 기계적 연마동안 제타 포텐셜을 사용하여 종말점을 탐지하는 방법 및 장치 - Google Patents

화학적 기계적 연마동안 제타 포텐셜을 사용하여 종말점을 탐지하는 방법 및 장치 Download PDF

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Publication number
KR100637568B1
KR100637568B1 KR1020017005154A KR20017005154A KR100637568B1 KR 100637568 B1 KR100637568 B1 KR 100637568B1 KR 1020017005154 A KR1020017005154 A KR 1020017005154A KR 20017005154 A KR20017005154 A KR 20017005154A KR 100637568 B1 KR100637568 B1 KR 100637568B1
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South Korea
Prior art keywords
polishing
zeta potential
change
fluid
pad
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Expired - Fee Related
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KR1020017005154A
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English (en)
Korean (ko)
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KR20010085953A (ko
Inventor
윌버시. 크루셀
앤드루제이. 나젠가스트
애닐케이. 판트
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램 리서치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
    • B24B21/04—Machines or devices using grinding or polishing belts; Accessories therefor for grinding plane surfaces
    • B24B21/06—Machines or devices using grinding or polishing belts; Accessories therefor for grinding plane surfaces involving members with limited contact area pressing the belt against the work, e.g. shoes sweeping across the whole area to be ground
    • B24B21/08—Pressure shoes; Pressure members, e.g. backing belts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Weting (AREA)
KR1020017005154A 1998-10-29 1999-10-13 화학적 기계적 연마동안 제타 포텐셜을 사용하여 종말점을 탐지하는 방법 및 장치 Expired - Fee Related KR100637568B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/182,570 1998-10-29
US09/182,570 US6325706B1 (en) 1998-10-29 1998-10-29 Use of zeta potential during chemical mechanical polishing for end point detection

Publications (2)

Publication Number Publication Date
KR20010085953A KR20010085953A (ko) 2001-09-07
KR100637568B1 true KR100637568B1 (ko) 2006-10-20

Family

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Family Applications (1)

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KR1020017005154A Expired - Fee Related KR100637568B1 (ko) 1998-10-29 1999-10-13 화학적 기계적 연마동안 제타 포텐셜을 사용하여 종말점을 탐지하는 방법 및 장치

Country Status (9)

Country Link
US (1) US6325706B1 (enExample)
EP (1) EP1124666B1 (enExample)
JP (1) JP2002528928A (enExample)
KR (1) KR100637568B1 (enExample)
AT (1) ATE222158T1 (enExample)
AU (1) AU6297799A (enExample)
DE (1) DE69902553T2 (enExample)
TW (1) TW445535B (enExample)
WO (1) WO2000025983A1 (enExample)

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US6520834B1 (en) * 2000-08-09 2003-02-18 Micron Technology, Inc. Methods and apparatuses for analyzing and controlling performance parameters in mechanical and chemical-mechanical planarization of microelectronic substrates
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US6607425B1 (en) * 2000-12-21 2003-08-19 Lam Research Corporation Pressurized membrane platen design for improving performance in CMP applications
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US6656024B1 (en) * 2001-12-21 2003-12-02 Lam Research Corporation Method and apparatus for reducing compressed dry air usage during chemical mechanical planarization
US6653202B1 (en) * 2003-01-17 2003-11-25 Advanced Micro Devices, Inc. Method of shallow trench isolation (STI) formation using amorphous carbon
DE10325406B4 (de) * 2003-06-05 2005-04-28 Eads Deutschland Gmbh Schadensermittlung an zu prüfenden Strukturen mittels Ultraschall
US20050118932A1 (en) * 2003-07-03 2005-06-02 Homayoun Talieh Adjustable gap chemical mechanical polishing method and apparatus
US6955588B1 (en) * 2004-03-31 2005-10-18 Lam Research Corporation Method of and platen for controlling removal rate characteristics in chemical mechanical planarization
US7120553B2 (en) * 2004-07-22 2006-10-10 Applied Materials, Inc. Iso-reflectance wavelengths
US7153182B1 (en) * 2004-09-30 2006-12-26 Lam Research Corporation System and method for in situ characterization and maintenance of polishing pad smoothness in chemical mechanical polishing
DE102004054920B4 (de) * 2004-11-09 2008-01-31 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Bauteil und Vorrichtung zur Steuerung von physikalischen Parametern mit mindestens einem Bauteil
DE102006018276A1 (de) * 2006-04-20 2007-10-31 Conti Temic Microelectronic Gmbh Verfahren und Vorrichtung zur Schliffpräparation eines mehrere ebene und zueinander parallel verlaufende Schichten unterschiedlichen Materials aufweisenden Probenkörpers
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US20130017762A1 (en) * 2011-07-15 2013-01-17 Infineon Technologies Ag Method and Apparatus for Determining a Measure of a Thickness of a Polishing Pad of a Polishing Machine
US9259821B2 (en) 2014-06-25 2016-02-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing layer formulation with conditioning tolerance
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US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
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US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
KR20230169424A (ko) 2015-10-30 2023-12-15 어플라이드 머티어리얼스, 인코포레이티드 원하는 제타 전위를 가진 연마 제품을 형성하는 장치 및 방법
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
DE102016214568A1 (de) * 2016-08-05 2018-02-08 Weeke Bohrsysteme Gmbh Bearbeitungsvorrichtung und Bearbeitungsverfahren
US11130686B2 (en) 2017-01-10 2021-09-28 Vermeer Manufacturing Company Systems and methods for dosing slurries to remove suspended solids
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Also Published As

Publication number Publication date
ATE222158T1 (de) 2002-08-15
KR20010085953A (ko) 2001-09-07
US6325706B1 (en) 2001-12-04
JP2002528928A (ja) 2002-09-03
WO2000025983A1 (en) 2000-05-11
AU6297799A (en) 2000-05-22
EP1124666B1 (en) 2002-08-14
DE69902553D1 (de) 2002-09-19
DE69902553T2 (de) 2003-04-24
TW445535B (en) 2001-07-11
EP1124666A1 (en) 2001-08-22

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