KR100634315B1 - 폴리머 패턴 - Google Patents
폴리머 패턴 Download PDFInfo
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- KR100634315B1 KR100634315B1 KR1020050009815A KR20050009815A KR100634315B1 KR 100634315 B1 KR100634315 B1 KR 100634315B1 KR 1020050009815 A KR1020050009815 A KR 1020050009815A KR 20050009815 A KR20050009815 A KR 20050009815A KR 100634315 B1 KR100634315 B1 KR 100634315B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/0015—Cantilevers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00166—Electrodes
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0012—Arrays characterised by the manufacturing method
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
- G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/201—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0118—Cantilevers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/019—Suspended structures, i.e. structures allowing a movement characterized by their profile
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/04—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
Abstract
Description
상기 폴리머는 양성 감광성 폴리머 또는 음성 감광성 폴리머 중 어느 하나일 수 있다.
상기 오목한 패턴의 수직 단면은 상부 및 하부가 일직선상으로 절단된 원 또는 타원형의 형상이며, 상기 폴리머 패턴의 상부표면과 상기 오목한 패턴이 만나는 점과 상기 폴리머 패턴의 하부표면과 상기 오목한 패턴이 만나는 점을 일직선으로 연결할 때, 상기 폴리머 패턴의 하부 표면과 상기 일직선이 이루는 각(A)은 90°이상 180°이하이고, 상기 폴리머는 양성 감광성일 수 있다.
상기 (b) 단계는, (b-1) 수직으로 입사하는 광을 산란시켜 임의의 방향으로 진행하는 광으로 바꾸는 디퓨저를 상기 포토마스크 상에 설치하는 단계를 더 포함할 수 있다.
Claims (29)
- 기판 위에 소정의 형상으로 형성된 폴리머 패턴에 있어서,상기 폴리머 패턴은 상기 폴리머 패턴의 표면으로부터 상기 기판과 수직방향으로 오목한 패턴으로 형성되고, 상기 기판과 수평방향으로 연장되는 하나 이상의 패턴을 가지며,상기 오목한 패턴의 수직 단면은 하나 이상의 곡면을 갖는 원 또는 타원의 형상이고, 상기 원 또는 타원의 중심 위쪽의 상부가 일직선상으로 절단된, 폴리머 패턴.
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- 제1항에 있어서,상기 폴리머 패턴은 인접한 패턴들 사이의 거리가 근접해질수록 상기 오목한 패턴이 서로 밀착되어 높은 밀도를 가지는, 폴리머 패턴.
- 제1항 또는 제3항에 있어서,상기 폴리머는 양성 감광성 폴리머 또는 음성 감광성 폴리머 중 어느 하나인, 폴리머 패턴.
- 제1항에 있어서,상기 오목한 패턴의 수직 단면은 상부 및 하부가 일직선상으로 절단된 원 또는 타원형의 형상이며,상기 폴리머 패턴의 상부표면과 상기 오목한 패턴이 만나는 점과 상기 폴리머 패턴의 하부표면과 상기 오목한 패턴이 만나는 점을 일직선으로 연결할 때, 상기 폴리머 패턴의 하부 표면과 상기 일직선이 이루는 각(A)은 90°이상 180°이하이고,상기 폴리머는 양성 감광성인, 폴리머 패턴.
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Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/KR2005/000346 WO2005078523A1 (en) | 2004-02-12 | 2005-02-04 | Polymer pattern and metal film pattern, metal pattern, plastic mold using thereof, and method of the forming the same |
US10/584,409 US20100046079A1 (en) | 2004-02-12 | 2005-02-04 | Polymer pattern and metal film pattern, metal pattern, plastic mold using thereof, and method of the forming the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040009291 | 2004-02-12 | ||
KR20040009291 | 2004-02-12 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020060082969A Division KR100649937B1 (ko) | 2004-02-12 | 2006-08-30 | 폴리머 패턴 형성방법 및 이를 이용한 금속 박막 패턴,금속 패턴, 플라스틱 몰드 구조 및 이들의 형성방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060029125A KR20060029125A (ko) | 2006-04-04 |
KR100634315B1 true KR100634315B1 (ko) | 2006-10-16 |
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020050009815A KR100634315B1 (ko) | 2004-02-12 | 2005-02-03 | 폴리머 패턴 |
KR1020060082969A KR100649937B1 (ko) | 2004-02-12 | 2006-08-30 | 폴리머 패턴 형성방법 및 이를 이용한 금속 박막 패턴,금속 패턴, 플라스틱 몰드 구조 및 이들의 형성방법 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020060082969A KR100649937B1 (ko) | 2004-02-12 | 2006-08-30 | 폴리머 패턴 형성방법 및 이를 이용한 금속 박막 패턴,금속 패턴, 플라스틱 몰드 구조 및 이들의 형성방법 |
Country Status (2)
Country | Link |
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US (1) | US20100046079A1 (ko) |
KR (2) | KR100634315B1 (ko) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100817101B1 (ko) * | 2007-04-04 | 2008-03-26 | 한국과학기술원 | 폴리머 또는 레지스트 패턴과 이를 이용한 몰드, 금속 박막패턴, 금속 패턴 및 이들의 형성 방법 |
KR100979387B1 (ko) * | 2008-10-13 | 2010-08-31 | 성균관대학교산학협력단 | 탄소나노물질패턴 형성 방법 |
KR100956897B1 (ko) * | 2008-11-14 | 2010-05-11 | 김정식 | 경면박막 및 입체 무늬를 가지는 연속 입체 금속박막에 관한 그 가공 방법 |
KR100951704B1 (ko) * | 2009-02-13 | 2010-04-08 | 웅진케미칼 주식회사 | 휘도강화시트의 제조방법 및 이에 의해 제조된 휘도강화시트 |
KR100951703B1 (ko) * | 2009-02-13 | 2010-04-08 | 웅진케미칼 주식회사 | 휘도강화시트의 제조방법 및 이에 의해 제조된 휘도강화시트 |
KR101138468B1 (ko) * | 2012-01-10 | 2012-04-25 | 한국과학기술원 | 마이크로플루이딕 채널을 이용한 유체 내 시료 분리방법 |
KR101429524B1 (ko) * | 2013-05-13 | 2014-08-14 | 한양대학교 에리카산학협력단 | 디퓨저 리소그래피를 이용한 3차원 미세구조 형성방법 및 이에 적용하기 위한 디퓨저 |
WO2015137248A1 (ja) * | 2014-03-14 | 2015-09-17 | Jsr株式会社 | 配線の製造方法、感放射線性組成物、電子回路および電子デバイス |
CN106807460A (zh) * | 2016-12-20 | 2017-06-09 | 深圳太辰光通信股份有限公司 | 一种用于平面波导传感器芯片的微流通道的制备方法 |
FR3110716B1 (fr) * | 2020-05-19 | 2022-04-29 | Commissariat Energie Atomique | Procede de fabrication de moules pour lithographie par nano-impression |
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KR100643684B1 (ko) * | 2005-11-04 | 2006-11-10 | 한국과학기술원 | 폴리머 또는 레지스트 패턴 및 이를 이용한 금속 박막패턴, 금속 패턴, 플라스틱 몰드 및 이들의 형성방법 |
KR100817101B1 (ko) * | 2007-04-04 | 2008-03-26 | 한국과학기술원 | 폴리머 또는 레지스트 패턴과 이를 이용한 몰드, 금속 박막패턴, 금속 패턴 및 이들의 형성 방법 |
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2005
- 2005-02-03 KR KR1020050009815A patent/KR100634315B1/ko active IP Right Grant
- 2005-02-04 US US10/584,409 patent/US20100046079A1/en not_active Abandoned
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Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000241607A (ja) | 1999-02-18 | 2000-09-08 | Hoya Corp | マイクロレンズアレイの形成方法およびマイクロレンズアレイ |
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US20100046079A1 (en) | 2010-02-25 |
KR20060029125A (ko) | 2006-04-04 |
KR20060100340A (ko) | 2006-09-20 |
KR100649937B1 (ko) | 2006-11-29 |
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