KR100633892B1 - 가스 샤워 헤드, 성막 장치 및 성막 방법 - Google Patents

가스 샤워 헤드, 성막 장치 및 성막 방법 Download PDF

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Publication number
KR100633892B1
KR100633892B1 KR1020047012751A KR20047012751A KR100633892B1 KR 100633892 B1 KR100633892 B1 KR 100633892B1 KR 1020047012751 A KR1020047012751 A KR 1020047012751A KR 20047012751 A KR20047012751 A KR 20047012751A KR 100633892 B1 KR100633892 B1 KR 100633892B1
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KR
South Korea
Prior art keywords
shower head
gas
substrate
metal
film forming
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KR1020047012751A
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English (en)
Korean (ko)
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KR20040086392A (ko
Inventor
무라카미세이시
하나다요시유키
Original Assignee
동경 엘렉트론 주식회사
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Application filed by 동경 엘렉트론 주식회사 filed Critical 동경 엘렉트론 주식회사
Publication of KR20040086392A publication Critical patent/KR20040086392A/ko
Application granted granted Critical
Publication of KR100633892B1 publication Critical patent/KR100633892B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020047012751A 2002-02-20 2003-02-20 가스 샤워 헤드, 성막 장치 및 성막 방법 KR100633892B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00043483 2002-02-20
JP2002043483A JP4288036B2 (ja) 2002-02-20 2002-02-20 ガスシャワーヘッド、成膜装置及び成膜方法
PCT/JP2003/001890 WO2003071003A1 (fr) 2002-02-20 2003-02-20 Tete d'aspersion de gaz, dispositif et procede de formation d'un film

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020067012397A Division KR100729874B1 (ko) 2002-02-20 2003-02-20 가스 샤워 헤드, 성막 장치 및 성막 방법

Publications (2)

Publication Number Publication Date
KR20040086392A KR20040086392A (ko) 2004-10-08
KR100633892B1 true KR100633892B1 (ko) 2006-10-13

Family

ID=27750527

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020047012751A KR100633892B1 (ko) 2002-02-20 2003-02-20 가스 샤워 헤드, 성막 장치 및 성막 방법
KR1020067012397A KR100729874B1 (ko) 2002-02-20 2003-02-20 가스 샤워 헤드, 성막 장치 및 성막 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020067012397A KR100729874B1 (ko) 2002-02-20 2003-02-20 가스 샤워 헤드, 성막 장치 및 성막 방법

Country Status (4)

Country Link
JP (1) JP4288036B2 (ja)
KR (2) KR100633892B1 (ja)
CN (1) CN1250767C (ja)
WO (1) WO2003071003A1 (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5044931B2 (ja) * 2005-10-31 2012-10-10 東京エレクトロン株式会社 ガス供給装置及び基板処理装置
KR100866912B1 (ko) 2007-05-31 2008-11-04 주식회사 마이크로텍 화학기상증착장비
US20080314311A1 (en) * 2007-06-24 2008-12-25 Burrows Brian H Hvpe showerhead design
US7807222B2 (en) * 2007-09-17 2010-10-05 Asm International N.V. Semiconductor processing parts having apertures with deposited coatings and methods for forming the same
JP2009224590A (ja) * 2008-03-17 2009-10-01 Tokyo Electron Ltd 基板処理装置
JP4731580B2 (ja) * 2008-03-27 2011-07-27 東京エレクトロン株式会社 成膜方法および成膜装置
KR101412034B1 (ko) * 2008-06-18 2014-06-26 주식회사 원익아이피에스 가스분사조립체 및 이를 이용한 박막증착장치
KR101155291B1 (ko) * 2010-02-22 2012-06-12 주식회사 테스 건식식각장치 및 이를 구비한 기판처리시스템
JP6115244B2 (ja) * 2013-03-28 2017-04-19 東京エレクトロン株式会社 成膜装置
EP3275008B1 (en) * 2015-03-25 2022-02-23 Applied Materials, Inc. Chamber components for epitaxial growth apparatus
US10297458B2 (en) * 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3360098B2 (ja) * 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造
JPH10226885A (ja) * 1997-02-17 1998-08-25 Ebara Corp ガス噴射ヘッド
JP3125043B2 (ja) * 1997-03-21 2001-01-15 東京大学長 分離可能な接合構造物及びその分離方法
JP2000239837A (ja) * 1999-02-15 2000-09-05 Sony Corp 固相拡散接合されたスパッタリングターゲット組立体の分離方法
JP2001064777A (ja) * 1999-08-30 2001-03-13 Ebara Corp ガス噴射ヘッド
JP4717179B2 (ja) * 2000-06-21 2011-07-06 日本電気株式会社 ガス供給装置及び処理装置

Also Published As

Publication number Publication date
KR100729874B1 (ko) 2007-06-18
CN1533447A (zh) 2004-09-29
JP4288036B2 (ja) 2009-07-01
WO2003071003A1 (fr) 2003-08-28
JP2003247073A (ja) 2003-09-05
CN1250767C (zh) 2006-04-12
KR20040086392A (ko) 2004-10-08
KR20060079804A (ko) 2006-07-06

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