KR100628392B1 - 처리 장치의 다변량 해석 모델식 작성 방법, 처리장치용의 다변량 해석 방법, 처리 장치의 제어 장치, 처리장치의 제어 시스템 - Google Patents

처리 장치의 다변량 해석 모델식 작성 방법, 처리장치용의 다변량 해석 방법, 처리 장치의 제어 장치, 처리장치의 제어 시스템 Download PDF

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KR100628392B1
KR100628392B1 KR1020047019644A KR20047019644A KR100628392B1 KR 100628392 B1 KR100628392 B1 KR 100628392B1 KR 1020047019644 A KR1020047019644 A KR 1020047019644A KR 20047019644 A KR20047019644 A KR 20047019644A KR 100628392 B1 KR100628392 B1 KR 100628392B1
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KR
South Korea
Prior art keywords
processing apparatus
setting data
correlation
multivariate analysis
processing
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KR1020047019644A
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English (en)
Korean (ko)
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KR20050010021A (ko
Inventor
도모야스마사유키
오힌
다나카히데키
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동경 엘렉트론 주식회사
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Publication of KR20050010021A publication Critical patent/KR20050010021A/ko
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Publication of KR100628392B1 publication Critical patent/KR100628392B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020047019644A 2002-06-05 2003-06-05 처리 장치의 다변량 해석 모델식 작성 방법, 처리장치용의 다변량 해석 방법, 처리 장치의 제어 장치, 처리장치의 제어 시스템 KR100628392B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2002163869 2002-06-05
JPJP-P-2002-00163869 2002-06-05
JPJP-P-2002-00168653 2002-06-10
JP2002168653 2002-06-10
PCT/JP2003/007132 WO2003105210A1 (ja) 2002-06-05 2003-06-05 処理装置の多変量解析モデル式作成方法、処理装置用の多変量解析方法、処理装置の制御装置、処理装置の制御システム

Publications (2)

Publication Number Publication Date
KR20050010021A KR20050010021A (ko) 2005-01-26
KR100628392B1 true KR100628392B1 (ko) 2006-09-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020047019644A KR100628392B1 (ko) 2002-06-05 2003-06-05 처리 장치의 다변량 해석 모델식 작성 방법, 처리장치용의 다변량 해석 방법, 처리 장치의 제어 장치, 처리장치의 제어 시스템

Country Status (5)

Country Link
JP (1) JP4224454B2 (ja)
KR (1) KR100628392B1 (ja)
CN (1) CN100426471C (ja)
TW (1) TWI276162B (ja)
WO (1) WO2003105210A1 (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006001416A1 (ja) * 2004-06-29 2006-01-05 Nikon Corporation 管理方法及び管理システム、並びにプログラム
JP4643392B2 (ja) * 2005-08-24 2011-03-02 東京エレクトロン株式会社 プラズマ処理装置の運転状態判定方法、運転状態判定装置、プログラム及び記憶媒体
JP4164835B2 (ja) * 2005-12-20 2008-10-15 新東工業株式会社 ブラスト装置による投射状態情報の推定法および投射状態情報の推定装置、ならびに投射状態情報の推定プログラム
US7286948B1 (en) * 2006-06-16 2007-10-23 Applied Materials, Inc. Method for determining plasma characteristics
US20100332010A1 (en) * 2009-06-30 2010-12-30 Brian Choi Seasoning plasma processing systems
US10176279B2 (en) * 2015-06-05 2019-01-08 Uptake Technologies, Inc. Dynamic execution of predictive models and workflows
US9934351B2 (en) * 2015-11-09 2018-04-03 Applied Materials, Inc. Wafer point by point analysis and data presentation
JP6546867B2 (ja) * 2016-03-10 2019-07-17 東京エレクトロン株式会社 処理プロセスを調整する方法
JP7034646B2 (ja) * 2017-09-25 2022-03-14 株式会社Ｓｃｒｅｅｎホールディングス 異常検知装置、及び異常検知方法
US10896833B2 (en) * 2018-05-09 2021-01-19 Applied Materials, Inc. Methods and apparatus for detecting an endpoint of a seasoning process
JP6990634B2 (ja) * 2018-08-21 2022-02-03 株式会社日立ハイテク 状態予測装置及び半導体製造装置
CN112585727B (zh) * 2019-07-30 2023-09-29 株式会社日立高新技术 装置诊断装置、等离子体处理装置以及装置诊断方法
WO2023162856A1 (ja) * 2022-02-22 2023-08-31 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置管理システム、支援装置、基板処理装置、チャンバ間性能比較方法およびチャンバ間性能比較プログラム

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1194735A (ja) * 1997-09-22 1999-04-09 Horiba Ltd 分光光度測定と多変量解析法とを用いた試料特性の定量分析装置およびその定量分析装置を用いた分析方法。
US6153115A (en) * 1997-10-23 2000-11-28 Massachusetts Institute Of Technology Monitor of plasma processes with multivariate statistical analysis of plasma emission spectra
US6582618B1 (en) * 1999-09-08 2003-06-24 Advanced Micro Devices, Inc. Method of determining etch endpoint using principal components analysis of optical emission spectra
ATE303618T1 (de) * 2000-03-10 2005-09-15 Smiths Detection Inc Steuerung für einen industriellen prozes mit einer oder mehreren multidimensionalen variablen
CN1197130C (zh) * 2000-07-04 2005-04-13 东京毅力科创株式会社 处理装置运转监视方法,评价方法及异常检测方法

Also Published As

Publication number Publication date
CN100426471C (zh) 2008-10-15
WO2003105210A1 (ja) 2003-12-18
KR20050010021A (ko) 2005-01-26
TW200404333A (en) 2004-03-16
TWI276162B (en) 2007-03-11
JPWO2003105210A1 (ja) 2005-10-13
JP4224454B2 (ja) 2009-02-12
CN1659690A (zh) 2005-08-24

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